A79T单PMOS管规格书PW3407

RDS(ON)
—
50
60
Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -2A,VGS= -4.5V)
RDS(ON)
—
70
90
Input Capacitance 輸入電容 (VGS=0V, VDS= -15V,f=1MHz)
CISS
—
430
—
(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic 特性參數
Symbol Min 符號 最小值
Typ 典型值
Max 最大值
Drain-Source Breakdown Voltage 漏極-源極擊穿電壓(ID = -250uA,VGS=0V)
(VGS=0V, VDS= -24V, TA=55℃)
IDSS
—
—
-1
-5
Gate Body Leakage 栅極漏電流(VGS=+20V, VDS=0V)
IGSS
—
—
+100
Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -4.3A,VGS= -10V)
BVDSS
-30
—
—
Gate Threshold Voltage 栅極開启電壓(ID = -250uA,VGS= VDS)
VGS(th)
-1
—
-2.5
Diode Forward Voltage Drop 内附二極管正向壓降(IS= -1A,VGS=0V)
VSD
—
—

Symbol 符號
Drain-Source Voltage 漏極-源極電壓
Gate- Source Voltage 栅極-源極電壓
BVDSS VGS
Drain Current (continuous) 漏極電流-連續
ID
Drain Current (pulsed) 漏極電流-脉冲
IDM
Total Device Dissipation
RDS(ON)
—
55
65
Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -2A,VGS= -4.5V)
RDS(ON)
—
75
95
Input Capacitance 輸入電容 (VGS=0V, VDS= -15V,f=1MHz)
CISS
—
260
—
總耗散功率
PD
TA=25℃環境溫度爲 25℃
Junction 結溫
TJ
Storage Temperature 儲存溫度
Tstg
Max 最大值
-30 +20 -4.1 -16
1400
150 -55to+150
Unit 單位
V V A A
mW
℃ ℃
AO3407
■ELECTRICAL CHARACTERISTICS 電特性
BVDSS
-30
—
—
Gate Threshold Voltage 栅極開启電壓(ID = -250uA,VGS= VDS)
VGS(th)
-1
—
-2.5
Diode Forward Voltage Drop 内附二極管正向壓降(IS= -1A,VGS=0V)

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.FS3407 SOT-23-3L-30V P Channel Enhancement沟道增强型MOS Field Effect Transistor场效应管▉Absolute Maximum Ratings最大额定值Characteristic特性参数Symbol符号Rat额定值Unit单位Drain-Source V oltage漏极-源极电压BV DSS-30V Gate-Source Voltage栅极-源极电压V GS+20V Drain Current(continuous)漏极电流-连续I D（at T A=25°C）-4.1A Drain Current(pulsed)漏极电流-脉冲I DM-15A Total Device Dissipation总耗散功率P D(at T A=25°C)1200mW Thermal Resistance Junction-Ambient热阻RΘJA105℃/W Junction/Storage Temperature结温/储存温度T J,T stg-55~150℃▉Device Marking产品字标FS3407=X7XB**ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.FS3407▉Electrical Characteristics电特性(T A=25℃unless otherwise noted如无特殊说明，温度为25℃)Characteristic 特性参数Symbol符号Min最小值Typ典型值Max最大值Unit单位Drain-Source Breakdown Voltage漏极-源极击穿电压(I D=-250uA,V GS=0V)BV DSS-30——VGate Threshold Voltage栅极开启电压(I D=-250uA,V GS=V DS)V GS(th)-1-1.5-2.4VZero Gate Voltage Drain Current零栅压漏极电流(V GS=0V,V DS=-30V)I DSS——1u AGate Body Leakage栅极漏电流(V GS=+20V,V DS=0V)I GSS——+100n AStatic Drain-Source On-State Resistance 静态漏源导通电阻(I D=-4.1A,V GS=-10V) (I D=-3.5A,V GS=-4.5V)R DS(ON)—40535568mΩDiode Forward Voltage Drop内附二极管正向压降(I SD=-4.1A,V GS=0V)V SD——-1.2VInput Capacitance输入电容(V GS=0V,V DS=-15V,f=1MHz)C ISS—572—pF Common Source Output Capacitance共源输出电容(V GS=0V,V DS=-15V,f=1MHz)C OSS—82—pF Reverse Transfer Capacitance反馈电容(V GS=0V,V DS=-15V,f=1MHz)C RSS—70—pF Total Gate Charge栅极电荷密度(V DS=-15V,I D=-4.1A,V GS=-10V)Q g—12—nC Gate Source Charge栅源电荷密度(V DS=-15V,I D=-4.1A,V GS=-10V)Q gs—2—nC Gate Drain Charge栅漏电荷密度(V DS=-15V,I D=-4.1A,V GS=-10V)Q gd—2—nC Turn-ON Delay Time开启延迟时间(V DS=-15V I D=-1A,R GEN=2.5Ω,V GS=-10V)t d(on)—4—ns Turn-ON Rise Time开启上升时间(V DS=-15V I D=-1A,R GEN=2.5Ω,V GS=-10V)t r—18—ns Turn-OFF Delay Time关断延迟时间(V DS=-15V I D=-1A,R GEN=2.5Ω,V GS=-10V)t d(off)—18—ns Turn-OFF Fall Time关断下降时间(V DS=-15V I D=-1A,R GEN=2.5Ω,V GS=-10V)t f—22—nsANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.FS3407■Typical Characteristic Curve典型特性曲线Figure1:Output Characteristics Figure2:Transfer CharacteristicsFigure3:On-Resistance vs.Drain Current Figure4:On-Resistance vs.TemperatureFigure5:Capacitance Characteristics Figure6:Gate-Charge CharacteristicsANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.FS3407■Typical Characteristic Curve典型特性曲线Figure7:Drain Current vs.Temperature Figure8:Safe Operating AreaFigure9:Transient Thermal Response Curve安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.FS3407▉Dimension外形封裝尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min MaxA 1.050 1.2500.0410.049 A10.0000.1000.0000.004 A2 1.050 1.1500.0410.045 b0.3000.5000.0120.020 c0.1000.2000.0040.008D 2.820 3.0200.1110.119E 1.500 1.7000.0590.067 E1 2.650 2.9500.1040.116 e0.950TYP0.037TYPe1 1.800 2.0000.0710.079 L0.600REF0.024REFL10.3000.6000.0120.024θ0o8o0o8o。

AO3407A30V P-Channel MOSFETGeneral DescriptionThe AO3407A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications.Product SummaryVDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) -30V -4.3A < 48mΩ < 78mΩSOT23 Top View Bottom ViewDDDS G SGG SAbsolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM PD TJ, TSTGMaximum -30 ±20 -4.3 -3.5 -25 1.4 0.9 -55 to 150Units V V AW ° CSymbolt ≤ 10s Steady-State Steady-StateRθJA RθJLTyp 70 100 63Max 90 125 80Units ° C/W ° C/W ° C/WRev 5: Nov 2011Page 1 of 5AO3407AC unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-4.3A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-4.3A IS=-1A,VGS=0V TJ=125° C -1.4 -25 34 52 54 10 -0.7 -1 -2 520 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 3.5 100 65 7.5 9.2 VGS=-10V, VDS=-15V, ID=-4.3A 4.6 1.6 2.2 7.5 VGS=-10V, VDS=-15V, RL=3.5Ω, RGEN=3Ω IF=-4.3A, dI/dt=100A/µs 5.5 19 7 11 5.3 11.5 11 6 48 68 78 -1.9 Min -30 -1 -5 ±100 -2.4 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nCSTATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain currentMaximum Body-Diode Continuous CurrentDYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistanceSWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4.3A, dI/dt=100A/µsA. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Rev 5: Nov 2011Page 2 of 5AO3407ATYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS30 25 -10V 20 -ID (A) 15 -4V 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 80 Normalized On-Resistance 70 60 RDS(ON) (mΩ ) 50 40 30 20 10 0 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 2 4 VGS=-10V VGS=-4.5V VGS=-3.5V 10 5 0 0.5 1.5 2.5 3.5 4.5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 125°C 25°C -4.5V 20 -ID(A) 15 -6V 25 30 VDS=-5V1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 VGS=-10V ID=-4.3AVGS ID=-3A17 5 2 10 =-4.5V0 Temperature (° C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)120 ID=-4.3A 100 RDS(ON) (mΩ )1.0E+02 1.0E+01 1.0E+00 -IS (A)4080 125°C 60125°C 1.0E-01 1.0E-02 1.0E-0325°C4025°C1.0E-04 1.0E-0520 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 2 40.00.20.40.60.81.01.2-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)Rev 5: Nov 2011Page 3 of 5AO3407ATYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS10 VDS=-15V ID=-4.3A 600 6 Capacitance (pF) -VGS (Volts) Ciss 80084004Coss 2002 Crss 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 300 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 100100.040 TA=25°C10.010µsPower (W)30ID (Amps)RDS(ON) limited1.0100µs 1ms 10ms 10ms200.1TJ(Max)=150°C TA=25°C10s DC100.0 0.01 0.1 1 VDS (Volts) 10 1000 0.0001 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 0.01Figure 9: Maximum Forward Biased Safe Operating Area (Note F)10 Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=125°C/WIn descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) PD Ton T TRev 5: Nov 2011Page 4 of 5AO3407AGate Charge Test Circuit & WaveformVgs Qg -10VVDCVDCDUT Vgs IgResistive Switching Test Circuit & WaveformsRL Vds Vgs Vgs Rg DUTVDCVgs VdsDiode Recovery Test Circuit & WaveformsVds + DUT Vgst rrVds Isd Vgs IgLVDC+ Vdd -VdsRev 5: Nov 2011+Chargeton td(on) tr t d(off) toff tf+--+-VdsQgsQgdVdd90%10%Q rr = - Idt-Isd-I FdI/dt -I RM VddPage 5 of 5。