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IRF044资料

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IRF044

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.Prelim. 9/9639.95 (1.573)max.17.15 (0.675)16.64 (0.655)30.40 (1.197)30.15 (1.187)26.67 (1.050)max.11.18 (0.440)10.67 (0.420)124.09 (0.161)3.84 (0.151)dia.2 plcs.20.32 (0.800)18.80 (0.740)dia.7.87 (0.310)6.99 (0.275)12.07 (0.475)11.30 (0.445)1.78 (0.070)1.52 (0.060)1.57 (0.062)1.47 (0.058)dia.2 plcs.VGSGate – Source VoltageIDContinuous Drain Current(VGS= 0 , Tcase= 25°C)IDContinuous Drain Current(VGS= 0 , Tcase= 100°C)IDMPulsedDrain Current 1PDPower Dissipation @ Tcase= 25°CLinear Derating FactorEASSingle Pulse Avalanche Energy 2dv/dtPeak Diode Recovery 3TJ, TstgOperating and Storage Temperature RangeTLLead Temperature 1.6mm (0.63”) from case for10 sec.±20V44A27A176A125W1.0W/°C340mJ4.5V/ns–55 to 150°C300°CMECHANICAL DATADimensions in mm (inches)N–CHANNELPOWER MOSFET

ABSOLUTE MAXIMUM RATINGS (Tcase= 25°C unlessotherwise stated)FEATURES• HERMETICALLY SEALED TO–3 METALPACKAGE• SIMPLE DRIVE REQUIREMENTS• SCREENING OPTIONS AVAILABLETO–3 Metal PackagePin 1 – GatePin 2 – SourceCase – Drain

Notes1) Pulse Test: Pulse Width ≤300µs, δ≤2%2) @ VDD= 25V , L ≥200µH , RG= 25Ω, Peak IL= 44A , Starting TJ= 25°C3) @ ISD≤44A , di/dt ≤250A/µs , VDD≤BVDSS, TJ≤150°C , Suggested RG= 9.1ΩVDSS60VID(cont)44ARDS(on)0.028Ω元器件交易网www.cecb2b.comIRF044

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.Prelim. 9/96ParameterTest ConditionsMin.Typ.Max.Unit600.680.0280.032241725250100–1002400110023039886.7151852231308179441762.52201.6Negligible5.0131.00.1230VGS= 0ID= 1mAReference to 25°CID= 1mAVGS= 10VID= 27AVGS= 10VID= 44AVDS= VGSID= 250mAVDS≥15VIDS= 27AVGS= 0VDS= 0.8BVDSSTJ= 125°CVGS= 20VVGS= –20VVGS= 0VDS= 25Vf = 1MHzVGS= 10VID= 44AVDS= 0.5BVDSSVDD= 30VID= 44ARG= 9.1ΩIS= 44ATJ= 25°CVGS= 0IF= 44ATJ= 25°Cdi/ dt≤100A/µsVDD≤50VELECTRICAL CHARACTERISTICS (Tcase= 25°C unless otherwise stated)Drain – Source Breakdown VoltageTemperature Coefficient of Breakdown VoltageStatic Drain – Source On–StateResistance 1Gate Threshold VoltageForward Transconductance 1Zero Gate Voltage Drain CurrentForward Gate – Source LeakageReverse Gate – Source LeakageInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceTotal Gate ChargeGate – Source ChargeGate – Drain (“Miller”) ChargeTurn–On Delay TimeRise TimeTurn–Off Delay TimeFall TimeContinuous Source CurrentPulse Source Current 2Diode Forward Voltage 1Reverse Recovery TimeReverse Recovery Charge 1Forward Turn–On TimeVV/°CΩVS (É)µAnApFnCnsAVnsµCnH°C/WBVDSS∆BVDSS∆TJRDS(on)VGS(th)gfsIDSSIGSSIGSSCissCossCrssQgQgsQgdtd(on)trtd(off)tfISISMVSDtrrQrrtonLDLSRθJCRθCSRθJASTATIC ELECTRICAL RATINGS

Notes1) Pulse Test: Pulse Width ≤300ms, δ≤2%2) Repetitive Rating – Pulse width limited by maximum junction temperature.DYNAMIC CHARACTERISTICSSOURCE – DRAIN DIODE CHARACTERISTICSInternal Drain Inductance (measured from 6mm down drain lead to centre of die)Internal Source Inductance (from 6mm down source lead to source bond pad)Thermal Resistance Junction – CaseThermal Resistance Case – SinkThermal Resistance Junction – AmbientPACKAGE CHARACTERISTICSTHERMAL CHARACTERISTICS元器件交易网www.cecb2b.com

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IRF系列高压MOS管

IRF系列高压MOS管

高压MOS管----IRF系列

学习杂记 2008-01-29 15:04:28 阅读2856 评论2 字号：大中小 订阅

IRF024 N-场效应60 17 60 TO-204AA

IRF034 N-场效应60 30 90 TO-204AE

IRF035 N-场效应60 25 90 TO-204AE

IRF044 N-场效应60 30 150 TO-204AE

IRF045 N-场效应60 30 150 TO-204AE

IRF054 N-场效应60 30 180 TO-204AA

IRF120 N-场效应100 8.0 40 TO-3

IRF121 N-场效应60 8.0 40 TO-3

IRF122 N-场效应100 7.0 40 TO-3

IRF123 N-场效应60 7.0 40 TO-3

IRF130 100V 14A 79W N-场效应

IRF130(铁)NMOS GDS 100V14A79W75/45nS0.16 功放开关

IRF131 N-场效应60V14A 75W TO-3

IRF132 N-场效应100V12A75W TO-3

IRF133 N-场效应60V12A 75W TO-3

IRF140 N-场效应100V 27A 125W TO-204AE

IRF141 N-场效应60V 27A 125W TO-204AE

IRF142 N-场效应100V24A 125W TO-204AE

IRF143 N-场效应60V 24A 125W TO-204AE

IRF150 N-场效应100V 40A 150W TO-204AE

IRF151 N-场效应60V 40A 150W TO-204AE

IRF152 N-场效应100V 33A 150W TO-204AE

IRF153 N-场效应60V33A 150W TO-204AE

IRF15N65 650V 5A 80W MOS

IRGPS40B120U中文资料

IRGPS40B120U中文资料

UltraFast IGBTIRGPS40B120U

INSULATED GATE BIPOLAR TRANSISTORFeaturesVCES = 1200V

VCE(on) typ. = 3.12V

@ VGE = 15V,

ICE = 40A, Tj=25°C

1/28/04Absolute Maximum Ratings

ParameterMax.Units

V

CESCollector-to-Emitter Voltage1200V

IC @ TC = 25°CContinuous Collector Current80

IC @ TC = 100°CContinuous Collector Current40

ICMPulsed Collector Current160A

ILMClamped Inductive Load Current160

VGEGate-to-Emitter Voltage± 20

V

PD @ TC = 25°CMaximum Power Dissipation595

PD @ TC = 100°CMaximum Power Dissipation238

TJOperating Junction and-55 to +150

TSTGStorage Temperature Range°C

Soldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)• Non Punch Through IGBT Technology.• 10µs Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.• Super-247 Package.

BenefitsPD- 94295B

W

1• Benchmark Efficiency for Motor Control.

常用低反压大功率VMOS场效应管

常用低反压大功率VMOS场效应管

1 常用低反压大功率VMOS场效应管

型号 材料 外形 用途与特性 备注

IRF054 N-FET 42 MOS-enh S-L 60V 60A 150W 200/200nS 0.022Ω

IRF140 N-FET 28B MOS-enh S-L 100V 28A 150W 110/75nS 0.077Ω

IRF150 N-FET 28B MOS-enh S-L 100V 40A 150W 100/100nS 0.022Ω

IRFIP054 N-FET 323 MOS-enh S-L 60V 62A 110W 0.014Ω

IRFIP044 N-FET 323 MOS-enh S-L 60V 48A 100W 0.028Ω

IRFP054 N-FET 323A MOS-enh S-L 60V 65A 180W 0.022Ω

IRFP150 N-FET 323A MOS-enh S-L 100V 40A 180W 211/140nS 0.055Ω

IRFP151 N-FET 323A MOS-enh S-L 60V 40A 180W 100/100nS 0.055Ω

IRFZ40 N-FET 138B MOS-enh S-L 50V 51A 125W 0.028Ω

IRFZ42 N-FET 138A MOS-enh S-L 50V 46A 125W 60/25nS 0.035Ω

IRFZ44 N-FET 138A MOS-enh S-L 60V 35A 150W 210/130nS 0.28Ω

血常规结合血清铁蛋白诊断孕妇缺铁性贫血的临床应用价值

血常规结合血清铁蛋白诊断孕妇缺铁性贫血的临床应用价值

血常规结合血清铁蛋白诊断孕妇缺铁性贫血的临床应用价值

【摘要】目的：缺铁性贫血是孕妇最常见的营养缺乏性疾病，对孕妇、胎儿可造成诸多的不良影响，因此要及时确诊，本文探析血常规结合血清铁蛋白诊断孕妇缺铁性贫血的临床价值。方法：选取2021年1月-2022年12月之间在我院建卡产检的孕妇作为研究样本，统计缺铁性贫血孕妇占比，并对比其血红蛋白和血清铁蛋白数据。结果：经检验诊断缺铁性贫血孕妇共有1688例（占比18.91%），缺铁性贫血孕妇和健康孕妇的血红蛋白、血清铁蛋白数值存在差异，P＜0.05为差异有统计学意义。结论：血常规和血清铁蛋白检测可为医生提供准确的病况数据，有利于对症治疗方案的制定及实施，对妊娠期缺铁性贫血患者的临床检验价值极高。

【关键词】缺铁性贫血；血常规；血清铁蛋白；临床价值

妊娠期贫血在高危妊娠范畴之内，由于孕妇在妊娠期的时候很容易受到各种因素的影响导致孕妇出现呕吐、食欲不振，主要表现为孕妇妊娠期血浆增加比明显高于血红细胞增加比，血容量增加明显，还有可能使孕妇血红蛋白降低，当孕妇出现血红蛋白降低的时候，即表现为贫血【1】。临床研究表明,妊娠期缺铁性贫血(iron deficiency anemia,IDA)属于病理性贫血,若不及时予以有效治疗,随病情进展性加重，可增加母体胎膜早破、产后出血、妊娠期高血糖的发病风险，同时也会增加新生儿室息、胎儿缺氧、胎儿生长受限等疾病的发病风险【2】。

1 资料与方法

1.1一般资料

选取2021年1月-2022年12月之间在我院建卡产检的孕妇作为研究样本，共计8926例，所有孕妇平均年龄为（27.33±2.79）岁，平均BMI值为（25.80±3.37）kg/m2，平均孕周为（20.68±3.21）周，孕早期2196例，孕中期3389例，孕晚期3341例，均依次进行血常规检验和血清铁蛋白检查。为保证此次研究的准确性，所有受检者临床资料完整，均知情且自愿配合本研究，排除合并其他妊娠病变、血液疾病家族史及弥漫性血管内凝血者、其他疾病导致贫血的患者，存在免疫功能障碍、有认知及语言功能障碍、精神疾病或癫痫史者、重要器官功能障碍和伴有恶性肿瘤者，因各种不可控原因，不能全程参与者。