BCX6925TA;BCX6916TA;中文规格书,Datasheet资料

CLASSIFICATION OF hFE(2)
RANK
BCX51 BCX52 BCX53
RANGE
63–250
BCX51-10 BCX52-10 BCX53-10
63–160
BCX51-16 BCX52-16 BCX53-16
100–250
C,Sep,2012
Typical Characteristics
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
4.600
1.550 REF.
2.300
2.600
3.940
4.250
1.500 TYP.
3.000 TYP.
0.900
1.200
Dimensions In Inches
Min.
Max.
0.055
0.063
0.013
0.020
0.016
0.023
0.014
0.017
0.173
0.181
0.061 REF.
FE
C
T =100 oC a
T =25 oC a
10 -1
-400
β=10
-300
-10
-100
COLLECTOR CURRENT I (mA) C
V —— I
CEsat
C
-1000
-200 -100

Vishay SiliconixNew ProductDual N-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYV DS (V)r DS(on) (W )I D (A)0.030 @ V GS = 4.5 V4.50.033 @ V GS = 3.0 V 4.2200.035 @ V GS = 2.5 V 3.90.043 @ VGS = 1.8 V3.6D 1S 1S 1G 112348765D 2S 2S 2G 2TSSOP-8Top ViewDD G 11N-Channel MOSFETD G 22N-Channel MOSFETOrdering Information:Si6926ADQ-T1—E3 (Lead Free)ABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)ParameterSymbol10 secsSteady State UnitDrain-Source Voltage V DS 20Gate-Source VoltageV GS "8VT A = 25_C 4.5 4.1Continuous Drain Current (T J = 150_C)a T A = 70_CI D 3.63.3Pulsed Drain Current (10 m s Pulse Width)I DM 20AContinuous Source Current (Diode Conduction)a I S 0.830.69Maximum Power Dissipation T A = 25_C 1.00.83aT A = 70_C P D 0.640.53W Operating Junction and Storage Temperature RangeT J , T stg−55 to 150_CTHERMAL RESISTANCE RATINGSParameterSymbol TypicalMaximumUnitM iJ ti t A bi t t v 10 sec 90125Maximum Junction-to-Ambient a Steady State R thJA 126150_Maximum Junction-to-Foot (Drain)Steady StateR thJF6580C/WNotesa.Surface Mounted on FR4 Board, t v 10 sec.For SPICE model information via the Worldwide Web: /www/product/spice.htmVishay SiliconixNew ProductSPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)ParameterSymbol Test Condition Min Typ a Max UnitStaticGate Threshold Voltage V GS(th)V DS = V GS , I D = 250 m A 0.401.0V Gate-Body LeakageI GSS V DS = 0 V, V GS = "8 V "100nA V DS = 20 V, V GS = 0 V 1Zero Gate Voltage Drain Current I DSS V DS = 20 V, V GS = 0 V, T J = 55_C5m A On-State Drain CurrentbI D(on)V DS w 5 V, V GS = 5 V 10AV GS = 4.5 V, I D = 4.5 A0.0240.030V GS = 3.0 V, I D = 4.2 A 0.0260.033Drain-Source On-State Resistance br DS(on)V GS = 2.5 V, I D = 3.9 A 0.0290.035WV GS = 1.8 V, I D = 3.6 A0.0350.043Forward Transconductance b g fs V DS = 10 V, I D = 4.5 A 26S Diode Forward Voltage bV SDI S = 0.83 A, V GS = 0 V0.61.1V Dynamic aTotal Gate Charge Q g 7.510.5Gate-Source Charge Q gs V DS = 10 V, V GS = 4.5 V, I D = 4.5 A1.2nCGate-Drain Charge Q gd 1.2Gate Resistance R g 1.9WTurn-On Delay Time t d(on)612Rise Timet r V 1625Turn-Off Delay Time t d(off)DD = 10 V, R L = 10 WI D ^ 1 A, V GEN = 10 V, R g = 6 W 4670ns Fall Timet f 915Source-Drain Reverse Recovery Timet rrI F = 0.83 A, di/dt = 100 A/m s 2040Notesa.Guaranteed by design, not subject to production testing.b.Pulse test; pulse width v 300 m s, duty cycle v 2%.0.000.250.500.751.001.251.501.752.0012345V DS − Drain-to-Source Voltage (V)V GS − Gate-to-Source Voltage (V)Vishay SiliconixNew ProductTYPICAL CHARACTERISTICS (25_C UNLESS NOTED)0.00.20.40.60.81.01.220040060080010001200048121620− O n -R e s i s t a n c e (r D S (o n )W )0.60.81.01.21.41.6−50−25025507510012515001234562468100.000.010.020.030.040.050.04.08.012.016.020.0V DS− Drain-to-Source Voltage (V)ID − Drain Current (A)Gate ChargeOn-Resistance vs. Drain Current− G a t e -t o -S o u r c e V o l t a g e (V )Q g − Total Gate Charge (nC)C − C a p a c i t a n c e (p F )V G S CapacitanceOn-Resistance vs. Junction Temperature0.000.010.020.030.040.050.060.070.0801234567820101Source-Drain Diode Forward Voltage− O n -R e s i s t a n c e (r D S (o n )W )V SD − Source-to-Drain Voltage (V)V GS − Gate-to-Source Voltage (V)− S o u r c e C u r r e n t (A )I S r D S (o n ) − O n -R e s i i s t a n c e (N o r m a l i z e d )Single Pulse Power, Junction-to-Ambient100600Vishay SiliconixNew ProductTYPICAL CHARACTERISTICS (25_C UNLESS NOTED)210.10.01Normalized Thermal Transient Impedance, Junction-to-FootN o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e。

NPN medium power transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BCX54; BCX55; BCX56
BCX54; BCX55; BCX56
MIN. − − − 40 63 25 63 100 − − −
TYP. − − − − − − − − − − 130 1.3
MAX. 100 10 100 − 250 − 160 250 0.5 1 − 1.6
UNIT nA µA nA
IC = 150 mA; VCE = 2 V; (see Fig.2)
1999 Apr 19
3
元器件交易网
Philips Semiconductors
Product specification
NPN medium power transistors
CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 125 °C IC = 0; VEB = 5 V VCE = 2 V; (see Fig.2) IC = 5 mA IC = 150 mA IC = 500 mA DC current gain BCX54-10; 55-10; 56-10 BCX54-16; 55-16; 56-16 VCEsat VBE fT h FE1 ----------h FE2 collector-emitter saturation voltage base-emitter voltage transition frequency DC current gain ratio of the complementary pairs IC = 500 mA; IB = 50 mA IC = 500 mA; VCE = 2 V IC = 150 mA; VCE = 2 V

微处理器监控电路MAX691介绍2008年11月07日星期五 22:20max691介绍_微处理器监控电路作者：汪龙景整理：nemoiumMAX691是美国MAXIM公司生产的微处理器监控电路。

由于技术先进，功能完整，精度较高，该电路在自动控制、自动测量及便携产品等领域得到广泛应用。

在法国 THOMCAST公司生和的E—UHF—10003全固态电视发射机中，该芯片应用有六处之多。

现将该集成电路的结构、原理及应用简单介绍如下：一、引脚排列及说明图1所示为MAX691的引脚排列图，分别说明如下：1、VBAn，臼备用电池输入端，连接到外部电池或电容器的充电电路，不用时接地。

2、Vovr一电源电压输出端，不使用备用电池时，可接到Vuo3、Vcc一电源电压输入端。

正常时应为 +5V。

4、GND--~地端5、BATT 0N—电池接通标志端。

当 VouT转接到VBATY时，变为高电平。

6．LOWLINE~电源电压降低标志端。

当 Vcc低于复位门限电压时，LOWLINE 变为低电平。

7、OSC IN—外部振荡器输入端。

8、OSC SEI广振荡器选择端。

9、Pp卜电源故障输入端。

不使用时接地或接Votrro10、PFO一电源故障输出端。

当PFI小于 1．25V时PFO变为低电平。

11、WD卜看门狗输入端。

不使用看门狗功能时悬空。

12、CEOUT—芯片使用输出端13、CEIN—芯片使用输入端。

不使用时接地或接Votrro14、WOD—‘看门狗输出端。

15、RESm，隅复位脉冲输出端，低电平有效。

16、RKSm，畸高电平有效的复位脉冲输出端，该端为漏极开路输出。

一、内部结构及工作原理图2所示为MAX691的内部结构方框图。

由图2知，该集成电路主要由以下几部分组成：1、电源监测及切换电路图2中，两个电压比较器C1、C2，电源切换开关及4．65V的基准电压源等构成电源监测及切换部分。

4。

65V的基准电压源产生复位门限电平，Ve与它在C：中进行比较。