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BCX71K;BCX71K_D87Z;中文规格书,Datasheet资料

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- 40 °C 25 °C 125 °C
1 10 100 I C - COLLECTOR CURRE NT (mA)
300
1 10 I C - COLLECTOR CURRE NT (mA)
100 200
Collector-Cutoff Current vs Ambient Temperature
I CBO - COLLE CTOR CURRENT (nA) V CB = 50V 10
PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8
SyncFET™ TinyLogic™ UHC™ VCX™
BCX71K
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
1.2 1 0.8 0.6 0.4 0.2 0 0.1
V BEON - BAS E EMITTER ON VOLTAGE (V)
V BESAT - BASE EM ITTE R VOLTAGE (V)
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Max
*BCX71K 350 2.8 357
Units
mW mW/°C °C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
/
BCX71K
Base-Emitter Saturation Voltage vs Collector Current
β = 10
Base Emitter ON Voltage vs Collector Current
1 0.8 0.6 0.4 0.2 0 0.1 V CE = 5V
- 40°C 25 °C 125 °C
TA = 25°C unless otherwise noted
Parameter
Value
45 45 5.0 500 -55 to +150
Units
V V V mA °C
3
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
350
Power Dissipation vs Ambient Temperature
P D - POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150
40
Vce = 5V
30
V(BR)CEO V(BR)EBO ICES Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current IC = 1.0 mA, IB = 0 IE = 10 µ A, IC = 0 VCB = 45 V, IE = 0 VCB = 45 V, IE = 0, TA = 100°C 45 5.0 20 20 V V nA µA
ON CHARACTERISTICS
hFE DC Current Gain IC = 10 µ A, VCE = 5.0 V IC = 2.0 mA, VCE = 5.0 V IC = 50 mA, VCE = 1.0 V IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA IC = 2.0 mA, VCE = 5.0 V 100 380 110 0.06 0.12 0.6 0.68 0.6 630 0.25 0.55 0.85 1.05 0.75 V V V V V
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Characteristics
Typical Pulsed Current Gain vs Collector Current
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST
DISCLAIMER
FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™
Absolute Maximum Ratings*
Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
500
V CE = 5V
VCESAT - COLLECTOR EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation Voltage vs Collect or Current
0.3 0.25 0.2 0.15 0.1 0.05 0 0.1
125 °C 25 °C
400 300
125 °C
β = 10
25 °C
200 100 0 0.01
- 40 °C
- 40 °C
Hale Waihona Puke 0.1 1 10 100 I C - COLLECTOR CURRENT (mA)
1 10 100 I C - COLLECTOR CURRE NT (mA)
300
/
BCX71K
BCX71K
C
E
SOT-23
Mark: BK
B
PNP General Purpose Amplifier
This device is designed for applications requiring extremely high current gain at collector currents to 300 mA. Sourced from Process 68.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
BCX71K
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
f T - GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product vs Collector Current
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
f = 1.0 MHz

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BCX70J贴片三极管规格书

BCX70J贴片三极管规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-23 Plastic-Encapsulate Transistors Value Unit ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditions M in T yp M ax Unit Collector-base breakdown voltageV (BR)CBO I C =10μA,I E 0 45 V Collector-emitter breakdown voltageV (BR)CEO I C =2mA,I B 0 45 V Emitter-base breakdown voltageV (BR)EBO I E =1μA,I C 0 5 V Collector cut-off currentI CES V CE =45V,V BE 0 20 nA h FE1 V CE =5V,I C =10μA 30 h FE2V CE =5V,I C 2mA 250 460 DC current gain BCX70J h FE3V CE =1V,I C 50mA 90 h FE1V CE =5V,I C =10μA 100 h FE2V CE =5V,I C 2mA 380 630 DC current gain BCX70K h FE3V CE =1V,I C 50mA 100 V CE(sat)1I C = 10mA I B = 0.25 mA 0.05 0.35 V Collector-emitter saturation voltage V CE(sat)2I C = 50mA I B =1.25 mA 0.1 0.55 V V BE(sat)1I C = 10mA I B =-0.25 mA 0.6 0.85 V Base -emitter saturation voltage V BE(sat)2I C = 50mA I B = 1.25 mA 0.7 1.05 V Base-emitter voltage V BEV CE =5V,I C =2mA 0.55 0.75 V Collector output capacitance C obV CB =10V,I E =0,f =1MHz 1.7 pF Noise Figure NFV CE =5V,I C =200μA, f=1KHz,BW=200Hz,RS=2K Ω 6 dB Gain-Bandwidth Product f T V CE = 5 V, I C =10mA,f =100 MHz 100 250 MHzSOT-23 1. BASE2. EMITTER3. COLLECTOR A,May,2011【南京南山半导体有限公司 — 长电贴片三极管选型资料】 【南京南山半导体有限公司 — 长电三极管选型资料】The bottom gasketThe top gasket3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the boxwith the tape Seal the boxwith the tape Stamp “EMPTY”on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm。

MMBD7000;MMBD7000_D87Z;中文规格书,Datasheet资料

MMBD7000;MMBD7000_D87Z;中文规格书,Datasheet资料


Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature
OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ®
SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ®
VCX™
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Infineon BCW61 BCX71 说明书

Infineon BCW61 BCX71 说明书

PNP Silicon AF TransistorFor AF input stages and driver applications High current gainLow collector-emitter saturation voltageLow noise between 30 Hz and 15 kHzComplementary types: BCW60, BCX70 (NPN)123VPS05161 Type Marking Pin Configuration PackageBCW 61A BCW 61B BCW 61C BCW 61D BCW 61FF BCW 61FN BCX 71G BCX 71H BCX 71J BCX 71K BAsBBsBCsBDsBFsBNsBGsBHsBJsBKs1 = B1 = B1 = B1 = B1 = B1 = B1 = B1 = B1 = B1 = B2 = E2 = E2 = E2 = E2 = E2 = E2 = E2 = E2 = E2 = E3 = C3 = C3 = C3 = C3 = C3 = C3 = C3 = C3 = C3 = CSOT23SOT23SOT23SOT23SOT23SOT23SOT23SOT23SOT23SOT23Maximum RatingsParameter Symbol BCW61BCW61FF BCX71Unit Collector-emitter voltage V CEO323245V Collector-base voltage V CBO323245Emitter-base voltage V EBO555DC collector current I C mA100Peak collector current200mAI CMPeak base current200I BMTotal power dissipation, T S = 71 °C P tot mW330Junction temperature T j150°C Storage temperature T stg-65 (150)Thermal ResistanceJunction - soldering point1)R thJS 240K/W Electrical Characteristics at T A = 25°C, unless otherwise specified.Parameter Symbol Values Unitmin.typ.max.DC CharacteristicsCollector-emitter breakdown voltageI C = 10 mA, I B = 0 BCW61/61FFBCX71V(BR)CEO3245----VCollector-base breakdown voltageI C = 10 µA, I B = 0 BCW61/61FFBCX71V(BR)CBO3245----Emitter-base breakdown voltageI E = 1 µA, I C = 0V(BR)EBO5--1For calculation of RthJA please refer to Application Note Thermal ResistanceElectrical Characteristics at T A = 25°C, unless otherwise specified.Parameter Symbol Values Unitmin.typ.max.AC CharacteristicsCollector cutoff currentV CB = 32 V, I E = 0 V CB = 45 V, I E = 0 BCW61/61FFBCX71I CBO----2020nACollector cutoff currentV CB = 32 V, I E = 0 , T A = 150 °C V CB = 45 V, I E = 0 , T A = 150 °C BCW61/61FFBCX71I CBO----2020µAEmitter cutoff currentV EB = 4 V, I C = 0I EBO--20nADC current gain 1)I C = 10 µA, V CE = 5 V h FE-grp. A/Gh FE-grp. B/Hh FE-grp. C/J/FFh FE-grp. D/K/FN h FE203040100140200300460-----DC current gain 1)I C = 2 mA, V CE = 5 V h FE-grp. A/Gh FE-grp. B/Hh FE-grp. C/J/FFh FE-grp. D/K/FN h FE120180250380170250350500220310460630DC current gain 1)I C = 50 mA, V CE = 1 V h FE-grp. A/Gh FE-grp. B/Hh FE-grp. C/J/FFh FE-grp. D/K/FN h FE6080100110--------Electrical Characteristics at T A = 25°C, unless otherwise specified.Parameter Symbol Values Unitmin.typ.max. CharacteristicsCollector-emitter saturation voltage1) I C = 10 mA, I B = 0.25 mAI C = 50 mA, I B = 1.25 mA V CEsat--0.120.20.250.55VBase-emitter saturation voltage 1) I C = 10 mA, I B = 0.25 mAI C = 50 mA, I B = 1.25 mA V BEsat--0.70.830.851.05Base-emitter voltage 1) I C = 10 µA, V CE = 5 V I C = 2 mA, V CE = 5 V I C = 50 mA, V CE = 1 V V BE(ON)-0.55-0.520.650.78-0.75-AC CharacteristicsTransition frequencyI C = 20 mA, V CE = 5 V, f = 100 MHzf T-250-MHzCollector-base capacitanceV CB = 10 V, f = 1 MHzC cb-3-pFEmitter-base capacitanceV EB = 0.5 V, f = 1 MHzC eb-8-Short-circuit input impedance I C = 2 mA, V CE = 5 V, f = 1 kHz h FE-grp.A/GB/HC/J/FFD/K/FNh11e----2.73.64.57.5----kOpen-circuit reverse voltage transf.ratio I C = 2 mA, V CE = 5 V, f = 1 kHz h FE-grp.A/GB/HC/J/FFD/K/FNh12e----1.5223----10-4Electrical Characteristics at T A = 25°C, unless otherwise specified.Parameter Symbol Values Unitmin.typ.max.AC CharacteristicsShort-circuit forward current transf.ratio I C = 2 mA, V CE = 5 V, f = 1 kHz h FE-grp.A/GB/HC/J/FFD/K/FNh21e----200260330520-----Open-circuit output admittance I C = 2 mA, V CE = 5 V, f = 1 kHz h FE-grp.A/GB/HC/J/FFD/K/FNh22e----18243050----SNoise figureI C = 200 µA, V CE = 5 V, R S = 1 k , f = 1 kHz, f = 200 Hz h FE-grp.A/KFF/FNF--21-2dBEquivalent noise voltageI C = 200 µA, V CE = 5 V, R S = 2 k , f = 10 ... 50 Hz h FE-grp.FF/FNV n--0.11µVCollector-base capacitance C CB = f (V CBO )Emitter-base capacitance C EB = f (V EBO )1C C (Total power dissipation P tot = f (T S )mW360P t o tPermissible pulse loadP totmax / P totDC = f (t p )101055101510231010101010100stotmaxP P Transition frequency f T = f (I C )V CE = 5V3Collector-emitter saturation voltageI C = f (V CEsat ), h FE = 40Base-emitter saturation voltage I C = f (V BEsat ), h FE = 40DC current gain h FE = f (I C )V CE = 5V2Collector current I C = f (V BE)V CE = 5Vh parameter h e = f (I C ) normalizedV CE = 5V1Collector cutoff current I CBO = f (T A )V CB = V CEmaxΙNoise figureF = f (V CE )I C = 0.2mA, R S = 2k , f = 1kHz2h parameter h e= f (V CE ) normalized I C = 2mANoise figure F = f (I C )V CE = 5V, f = 120Hz1Noise figureF = f (f )I C = 0.2mA, V CE = 5V, R S = 2k2Noise figure F = f (I C )V CE = 5V,f = 1kHz10-3110mA 10-210-1010Noise figure F = f (I C )V CE = 5V, f = 10kHz1。

BCX71中文资料

BCX71中文资料


SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO hFE
VCEsat VBEsat VBE
emitter cut-off current DC current gain
BCX71G BCX71H BCX71J BCX71K DC current gain BCX71G BCX71H BCX71J BCX71K DC current gain BCX71G BCX71H BCX71J BCX71K collector-emitter saturation voltage
IC = −10 mA; IB = −0.25 mA IC = −50 mA; IB = −1.25 mA; note 1 IC = −10 mA; IB = −0.25 mA IC = −50 mA; IB = −1.25 mA; note 1 IC = −2 mA; VCE = −5 V IC = −10 µA; VCE = −5 V IC = −50 mA; VCE = −1 V; note 1 IE = Ie = 0; VCB = −10 V; f = 1 MHz IC = Ic = 0; VEB = −0.5 V; f = 1 MHz IC = −10 mA; VCE = −5 V; f = 100 MHz IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz
Q
c Lp detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1 max.