IXTK140N20P中文资料

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TO-264(SP) (IXTK)
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Pu ls e W id th - m illis e c o n d s
© 2004 IXYS All rights reserved
140 120 100 VGS = 10V 9V 8V 3 VGS = 10V
V D S - Volts
4
5
6
7
8
9
10
Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m perature
R D S ( o n ) - Normalized
I D - Amperes
I D - Amperes
80 7V 60 40 20 5V 0 0 0.5 1 1.5 2 2.5
180 150 120 90 60 30 0 0 1 2 3
7V 6V
6V
V D S - Volts Fig. 3. Output Characteristics @ 150ºC
R D S ( o n ) - Normalized
I D - Amperes
60 50 40 30
VGS = 10V
I D - Amperes
-50
-25
0
TC - Degrees Centigrade
25
50
75
100
125
150
175
© 2004 IXYS All rights reserved
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IXTK 140N20P
Fig. 1. Output Characteristics @ 25ºC
140 120 100 VGS = 10V 9V 8V 300 270 240 210 8V VGS = 10V 9V
Fig. 2. Extended Output Characteristics @ 25ºC
Байду номын сангаас
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Capacitance - picoFarads
10,000
I D - Amperes
Ciss
Coss
1,000
100
100µs
1ms
Crss
DC 100 0 5 10 15 10
10ms
V DS - Volts
20
25
30
35
40
10
V D S - Volts
100
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
80 70 60 50 40 30 20 10 0 0 40 80 120 160 200 240 TJ = -40ºC 25ºC 150ºC
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
350 300 250 10 9 8 VDS = 100V I D = 70A I G = 10mA
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585
IXTK 140N20P
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 50 84 7500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1800 280 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 Ω (External) 35 150 90 240 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 50 100 S pF pF pF ns ns ns ns nC nC nC 0.18 K/W 0.15 K/W TO-264(SP) Outline (IXTK)
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Advanced Technical Information
PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTK 140N20P
VDSS ID25
RDS(on)
= 200 V = 140 A Ω = 18 mΩ
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300
1.13/10 Nm/lb.in. 10 g
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 500µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C
140 75 280 60 100 4 10 800 -55 ... +175 175 -55 ... +150
G
D
(TAB) S
G = Gate S = Source
D = Drain TAB = Drain
Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density
4 TJ = 175ºC 3.5 90 80 70 3 2.5 2 1.5 20 1 0.5 0 50 100 TJ = 25ºC 150 200 250 300 10 0 VGS = 15V
Fig. 6. Drain Curre nt vs . Cas e Tem pe rature
External Lead Current Limit
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IXTK 140N20P
Fig. 7. Input Adm ittance
225 200 175 120 110 100 90
Fig. 8. Transconductance
g f s - Siemens
I D - Amperes
150 125 100 75 50 25 0 4 4.5 5 5.5 6 6.5 7 7.5 8 TJ = 150ºC 25ºC -40ºC
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. 140 280 1.5 120 3.5 A A V ns µC
IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 25 A -di/dt = 100 A/µs VR = 100 V
PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending.
DS99194(07/04)
© 2004 IXYS All rights reserved
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IXTK 140N20P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
1.00
R( t h ) J C - ºC / W
0.10
0.01
0.00 0.1 1 10 100 1000
75
100 125 150 175 200 225 250
Fig. 11. Capacitance
100,000 1000