IXFT50N20中文资料

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Advanced Technical Information
NPT3 IGBT
in ISOPLUS 247TM
IXER 60N120 IC25
VCES VCE(sat) typ.
C G
= 95 A = 1200 V = 2.1 V
ISOPLUS 247TM E153432
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
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IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
© 2002 IXYS All rights reserved
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• single switches and with complementary free wheeling diodes • choppers • phaselegs, H bridges, three phase bridges e.g. for - power supplies, UPS - AC, DC and SR drives - induction heating
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH
IC = 60 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V

© 1999 IXYS All rights reservedSymbol Test Conditions Maximum RatingsV DSS T J = 25°C to 150°C500V V DGR T J = 25°C to 150°C; R GS = 1 M Ω500V V GS Continuous ±20V V GSM Transient ±30V I D25T C = 25°C21N5021A 24N5024A 26N5026A I DM T C = 25°C, pulse width limited by T JM 21N5084A 24N5096A 26N50104A I ART C = 25°C21N5021A 24N5024A 26N5026A E AR T C = 25°C30mJ dv/dt I S ≤ I DM , di/dt ≤ 100 A/µs, V DD ≤ V DSS ,5V/n s T J ≤ 150°C, R G = 2 ΩP D T C = 25°C300W T J -55 ... +150°CT JM 150°C T stg -55 ... +150°C T L 1.6 mm (0.062 in.) from case for 10 s 300°CM d Mounting torque1.13/10 Nm/lb.in.WeightTO-204 = 18 g, TO-247 = 6 gSymbol Test ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.V DSS V GS = 0 V, I D = 250 µA 500V V GS(th)V DS = V GS , I D = 4 mA 24V I GSS V GS = ±20 V DC , V DS = 0±100nA I DSSV DS = 0.8 • V DSS T J = 25°C 200µA V GS = 0 VT J = 125°C1mAN-Channel Enhancement ModeHigh dv/dt, Low t rr , HDMOS TM FamilyTO-247 AD (IXFH)TO-204 AE (IXFM)DGFeatures•International standard packages •Low R DS (on) HDMOS TM process•Rugged polysilicon gate cell structure •Unclamped Inductive Switching (UIS)rated•Low package inductance -easy to drive and to protect •Fast intrinsic RectifierApplications•DC-DC converters•Synchronous rectification •Battery chargers•Switched-mode and resonant-mode power supplies •DC choppers •AC motor control•Temperature and lighting controls •Low voltage relaysAdvantages•Easy to mount with 1 screw (TO-247)(isolated mounting screw hole)•High power surface mountable package •High power densityG = Gate, D = Drain,S = Source,TAB = Drain91525H (9/99)(TAB)V DSSI D25R DS(on)IXFH/IXFM21N50500 V 21 A 0.25 ΩIXFH/IXFM/IXFT24N50500 V 24 A 0.23 ΩIXFH/IXFT26N50500 V 26 A 0.20 Ω t rr ≤ 250 nsHiPerFETTMPower MOSFETsTO-268 (D3) Case Style(TAB)GS© 1999 IXYS All rights reservedFig. 1Output CharacteristicsFig. 2 Input AdmittanceFig. 5Drain Current vs.Fig. 6Temperature Dependence of Case TemperatureBreakdown and Threshold VoltageFig. 3R DS(on) vs. Drain CurrentFig. 4 Temperature Dependence of Drain to Source ResistanceT J - Degrees C-50-250255075100125150B V /V G (t h ) - N o r m a l i z e d0.50.60.70.80.91.01.11.2BV DSSV GS(th)T C - Degrees C -50-25255075100125150I D - A m p e r e s051015202530T J - Degrees C-50-250255075100125150R D S (o n ) - N o r m a l i z e d0.500.751.001.251.501.752.002.252.50I D - Amperes 05101520253035404550R D S (o n ) - N o r m a l i z e d0.91.01.11.21.31.41.51.6V GS - Volts012345678910I D - A m p e r e s5101520253035404550V DS - Volts 05101520253035I D - A m p e r e s5101520253035404550IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7154,850,0724,931,8445,034,7965,063,3075,237,4815,381,025IXYS reserves the right to change limits, test conditions, and dimensions.Fig.7Gate Charge Characteristic Curve Fig.8Forward Bias Safe Operating AreaFig.9Capacitance Curves Fig.10 Source Current vs. Source to Drain VoltageFig.11 Transient Thermal ImpedanceV DS - Volts110100I D - A m p e r e s0.1110100Gate Charge - nCoulombs255075100125150175200V G E - V o l t s012345678910V SD - Volt0.000.250.500.75 1.00 1.25 1.50I D - A m p e r e s05101520253035404550V DS - Volts 0510152025C a p a c i t a n c e - p F050010001500200025003000350040004500Time - Seconds0.000010.00010.0010.010.1110T h e r m a l R e s p o n s e - K /W0.0010.010.11C rssCoss50010µs 100µs1ms 10ms100msCissf = 1 Mhz V DS = 25V。

n20二极管参数n20二极管是一种常见的电子元件，具有多种重要参数，影响着其在电路中的应用。

本文将详细介绍n20二极管的各项参数及其特性。

1. 电流容限（IF）n20二极管的电流容限是指在正向工作状态下，二极管可承受的最大电流。

该参数是用来限制二极管工作时的电流大小，过大的电流容限可能导致二极管发热、损坏甚至烧毁。

因此，在设计电路时，需要根据n20二极管的电流容限来选择合适的电流值，以确保二极管的正常工作。

2. 领先电压（VF）n20二极管的领先电压是指在正向工作状态下，二极管所需的最小正向电压。

当电压低于领先电压时，二极管无法正常导通，无法起到预期的作用。

因此，在实际应用中，需要根据n20二极管的领先电压来确定电路的工作电压，以确保二极管正常导通。

3. 反向电流（IR）n20二极管的反向电流是指在反向工作状态下，二极管所能承受的最大反向电流。

当电流超过反向电流时，二极管可能会击穿，导致电路失效。

因此，在设计电路时，需要根据n20二极管的反向电流来选择合适的电流值，以确保二极管的正常工作。

4. 反向击穿电压（VR）n20二极管的反向击穿电压是指在反向工作状态下，二极管可承受的最大反向电压。

当电压超过反向击穿电压时，二极管可能会击穿，导致电路失效。

因此，在实际应用中，需要根据n20二极管的反向击穿电压来确定电路的工作电压，以确保二极管正常工作。

5. 动态电阻（rd）n20二极管的动态电阻是指在正向工作状态下，二极管的电压与电流之间的关系。

动态电阻可以用来描述二极管在导通状态下的电流响应速度和电压变化情况，也是评估二极管的快速开关能力的重要参数。

动态电阻越小，二极管的开关速度越快。

6. 热阻（θJA）n20二极管的热阻是指二极管在工作时，从结温到环境温度之间的温度差。

热阻决定了二极管在工作时的散热能力，对于高功耗的电子器件尤为重要。

通常情况下，热阻越小，二极管的散热能力越好。

7. 储能时间（tRR）n20二极管的储能时间是指在从正向导通到反向截止的过程中，二极管所需的时间。

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High Voltage IGBT
Short Circuit SOA Capability Square RBSOA
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA
tSC (SCSOA) PC VISOL TJ Tstg Md
M4 screws (4x) supplied
Dim.
A B C D E F G H J K L M N O P Q R S T U V W
Millimeter
Min.
Max.
31.50 7.80
31.88 8.20
4.09
4.29
4.09
4.29
4.09 14.91
4.29 15.11
30.12 37.80
VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 15 W, non repetitive
TC = 25°C
IGBT
50/60 Hz; IISOL £ 1 mA
Mounting torque Terminal connection torque (M4)
IXDN 75N120
200 A
ICM 150
100
50
RG = 15W
TJ = 125°C VCEK < VCES
0 0 200 400 600 800 1000 1200 V VCE
Fig. 9 Reverse biased safe operating area RBSOA
20 mJ Eoff 15
Eoff td(off)
W
2500
V~
-40 ... +150