MMBT2907ALT1(2F)1

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Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = –0.1 mAdc, VCE = –10 Vdc) hFE MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A VCE(sat) — — VBE(sat) — — –1.3 –2.6 –0.4 –1.6 Vdc 35 75 50 100 75 100 — 100 30 50 — — — — — — — 300 — — Vdc —

v
v
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT tr
500 VCC = –30 V IC/IB = 10 TJ = 25°C t, TIME (ns) 300 200 tf 100 70 50 30 20 2.0 V –200 –300 –500 10 7.0 5.0 –5.0 –7.0 –10 t′s = ts – 1/8 tf VCC = –30 V IC/IB = 10 IB1 = IB2 TJ = 25°C
(VCB = –50 Vdc, IE = 0, TA = 125°C) Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
t, TIME (ns)
–20 –30 –50 –70 –100 –200 –300 –500 IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Turn–Off Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 2907 –40 –60 –5.0 –600
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (3),(4) (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) fT 200 Cobo — Cibo — 30 8.0 pF — pF MHz
3
MMBT2907LT1 MMBT2907ALT1
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25°C
10 10 f = 1.0 kHz NF, NOISE FIGURE (dB) 8.0 IC = –1.0 mA, Rs = 430 Ω –500 µA, Rs = 560 Ω –50 µA, Rs = 2.7 kΩ –100 µA, Rs = 1.6 kΩ Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 8.0
–0.4
–0.2
0 –0.005
–0.01
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2
–0.3 –0.5 –0.7 –1.0 IB, BASE CURRENT (mA)
–2.0
–3.0
–5.0 –7.0 –10
–20 –30
–50
Figure 4. Collector Saturation Region
v
v
–30 V 200
+15 V
–6.0 V 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns
1.0 k 1.0 k 50
TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns
1N916
Figure 1. Delay and Rise Time Test Circuit
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
MMBT2907LT1 MMBT2907ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
SWITCቤተ መጻሕፍቲ ባይዱING CHARACTERISTICS
Turn–On Time Delay Time Rise Time Turn–Off Time Storage Time Fall Time (VCC = –6.0 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc) (VCC = –30 Vdc, IC = –150 mAdc, IB1 = –15 mAdc) ton td tr toff ts tf — — — — — — 45 10 40 100 80 30 ns ns
3.0 hFE , NORMALIZED CURRENT GAIN 2.0 VCE = –1.0 V VCE = –10 V TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 –0.1 – 55°C
–0.2 –0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 –16 V 200 ns 50 1.0 k INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 –30 V 200 ns
–10
–20
–30
–50 –70 –100
–200 –300
–500
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
–1.0
–0.8 IC = –1.0 mA –0.6 –10 mA –100 mA –500 mA
Figure 2. Storage and Fall Time Test Circuit
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT2907LT1 MMBT2907ALT1
TYPICAL CHARACTERISTICS
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc) (3)
(IC = –500 mAdc, VCE = –10 Vdc) (3) Collector – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) Base – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc)
MOTOROLA 查询MMBT2907ALT1供应商 SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT2907LT1/D
General Purpose Transistors
PNP Silicon
1 BASE
COLLECTOR 3
MMBT2907LT1 MMBT2907ALT1*
2 EMITTER
1
3
2907A –60
Unit Vdc Vdc Vdc mAdc
2

3DK2222A贴片三极管规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate Transistors3DK2222A TRANSISTOR (NPN)FEATURESy Epitaxial planar die constructiony Complementary PNP Type available(MMBT2907A)MARKING: 1P1MAXIMUM RATINGS (T a =25 unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) ParameterSymbol Test conditions Min Typ Max Unit Collector-base breakdown voltageV (BR)CBO I C = 10μA, I E =0 75 V Collector-emitter breakdown voltageV (BR)CEO I C = 10mA, I B =0 40 V Emitter-base breakdown voltageV (BR)EBO I E =10μA, I C =0 6 V Collector cut-off currentI CBO V CB =70 V , I E =0 0.01 μA Collector cut-off currentI CEX V CE =60V, V BE(off)=3V 0.01 μA Emitter cut-off current I EBOV EB = 3V, I C =0 0.01 μA H FE(1)V CE =10V, I C = 150mA 100 300 H FE(2)V CE =10V, I C = 0.1mA 40 DC current gain H FE(3)V CE =10V, I C = 500mA 42 Collector-emitter saturation voltageV CE (sat) I C =500 mA, I B = 50mA I C =150 mA, I B =15mA 0.6 0.3 V Base-emitter saturation voltageV BE (sat) I C =500 mA, I B = 50mA 1.2 V Transition frequencyf T V CE =20V, I C = 20mA f=100MHz 300 MHz Delay timet d 10 n s Rise timet r V CC =30V, V BE(off)=-0.5V I C =150mA , I B1= 15mA 25 n s Storage timet S 225 n s Fall time t f V CC =30V, I C =150mA I B1=-I B2=15mA 60 n s SOT-231. BASE2.EMITTER3.COLLECTOR A,May,2011℃ 【南京南山半导体有限公司 — 长电贴片三极管选型资料】【南京南山半导体有限公司 — 长电三极管选型资料】The bottom gasketThe top gasket3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the boxwith the tape Seal the boxwith the tape Stamp “EMPTY”on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm。

MMPQ2907A中文资料

50
PD - POWER DISSIPATION (W) 1
Power Dissipation vs Ambient Temperature
20 10 5
30 ns
0.75
SOT-6
t r = 15 V
0.5
2
60 ns
0.25
1 10
100 I C - COLLECTOR CURRENT (mA)
30 V
200 Ω
Ω 1.0 KΩ 0 - 16 V 50 Ω
≤ 200ns
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
15 V
- 6.0 V
1 KΩ Ω
37 Ω
1.0 KΩ Ω 0 - 30 V ≤ 200ns 50 Ω
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit
Max
FMB2907A 700 5.6 180 MMPQ2907A 1,000 8.0 125 240
Units
mW mW/°C °C/W °C/W °C/W
© 1998 Fairchild Semiconductor Corporation
元器件交易网
FFB2907A / FMBT2907A / MMPQ2907A
TA = 25°C unless otherwise noted
Parameter
Value
60 60 5.0 600 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range

常用二三极管丝印代码型对照表

贴片三极管型号查询直插封装的型号贴片的型号9011 1T9012 2T9013 J39014 J69015 M69016 Y69018 J8S8050 J3YS8550 2TY8050 Y18550 Y22SA1015 BA2SC1815 HF2SC945 CRMMBT3904 1AMMMBT3906 2AMMBT2222 1PMMBT5401 2LMMBT5551 G1MMBTA42 1DMMBTA92 2DBC807-16 5ABC807-25 5BBC807-40 5CBC817-16 6ABC817-25 6BBC817-40 6CBC846A 1ABC846B 1BBC847A 1EBC847B 1FBC847C 1GBC848A 1JBC848B 1KBC848C 1LBC856A 3ABC856B 3BBC857A 3EBC857B 3FBC858A 3JBC858B 3KBC858C 3L2SA733 CSUN2111 V1UN2112 V2UN2113 V3UN2211 V4UN2212 V5UN2213 V62SC3356 R232SC3838 AD2N7002702电源保护IC常销系列:MAX323EPE,MAX708,MAX485,MAX487,MAX488,MAX202CSE,MAX202CPE,MAX1487CPA,MAX1482CS D,MAX1232CSA,MAX809,MAX811,DS1302,DS1307,DS1232,SS8205G,SD8205S,FDS9926A,SD943 5,SD4953,SD4410....钽电容常销系列:A型体积:1UF16V,,10UF10V,10UF16V,,,,100UF4VB型体积:,10UF16V,10UF20V,22UF10V,22UF16V,,33UF10V,,47UF10V,,,220UF4VC:1UF50V,10UF25V,10UF35V,22UF16V,33UF16V,47UF16V,68UF16V,100UF10V,D型体积:10UF35V,22UF25V,33UF25V,47UF25V,100UF16V,,220UF10VE型体积:150UF10V,220UF16V,二三极管:MMBT3904,MMBT3906,MMBT2907A,MMBT2222A,MMBT8050,MMBT8550,S9018,S9014,S9013,S901 2,S9015,BSS138,BSS84,BAT54CSA,MMBTA92,MMBTA94,MMBTA44,BAV99,BAV70,MMBT5551,MMB T5401,SS8550,SS8050,2N7002,1N5819,1N5817,1N4001-4007,SS110,SS24,LL4148,1/2W的贴片圆柱稳压管.....SI2301,SI2302,SI2305,SI2307,IC常销系列:74HC00D,74HC02D,74HC04D,74HC08D,74HC138D,74HC14D,74HC164D,74HC165D,74HC244D,74 HC273D,74HC32D,74HC4051D,74HC4053D,74HC4052D,74HC573D,74HC574D,74HC595D,74HC74D,74HCT 14D,LM324D,LM358D,TL431CD,LM2901D,LM2902D,LM2903D,LM2904D电容系列:体积0402,0603,0805,1206,1210,容量:,22UF,100UF电阻系列:体积:0402,0603,0805,1206,1210,2010,2512阻值发光管系列:直插及贴片,红色,绿色,蓝色,黄色,白色,翠绿,粉红,紫色....QQ在线:92008-9-24 16:43:31:KD是什么三极管3楼2008-9-24 16:43:56:LD是什么三极管4楼2008-10-9 19:26:01:各位好,我是淘金mark互助论坛的版主[金麒麟1号],主要负责[自由互助板块]的管理以及为论坛朋友解答问题,欢迎大家来作客.我们的论坛是首家以交流电子元器件表面代码,markingcode的专业论坛,且永久免费,这是工程师,采购,业务交流的平台,相信能真正帮助到更多需要的朋友.请您到我们的论坛参观一下,如果对您有帮助,就来一起建设这个家园吧.我的MSN二三极管代码,SMD,SMD CODEBOOK,MARKING CODE,MARKINGCODE,顶标,丝印,打字,代码,二极管,三极管,IC,贴片5楼2008-10-14 23:54:06:紧急大量求购“APC”线路板上B52X贴片元件。

MMBT2907ALT1G

30
20 td @ VBE(off) = 0 V
10
7.0 5.0
2.0 V
3.0 -5.0 -7.0 -10
-20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT
Figure 5. Turn−On Time
t, TIME (ns)
500
300
Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS
Turn−On Time Delay Time Rise Time
Symbol V(BR)CEO
V(BR)CBO V(BR)EBO
ICEX ICBO
IBL hFE
VCE(sat)
VBE(sat)
fT Cobo Cibo ton
td tr toff ts tf
Min
−60 −60 −60 −5.0
−
− − −
75 100 100 100 50
− −
− −
200
− −
Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0)
Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
Collector Cutoff Current (VCB = −50 Vdc, IE = 0) (VCB = −50 Vdc, IE = 0, TA = 125°C)

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