TSS半导体放电管P0080SB-P4200SB系列型号【封装DO-214AA(SMB)】

--------------------- 精选公文范文----------------二极管封装大全各位读友大家好，此文档由网络收集而来，欢迎您下载，谢谢篇一：贴片二极管型号、参数贴片二极管型号.参数查询1、肖特基二极管SMA（DO214AC）2010-2-2 16:39:35标准封装：SMA 2010 SMB 2114 SMC 3220 SOD123 1206 SOD323 0805 SOD523 0603 IN4001 的封装是1812 IN4148 的封装是1206篇二：常见贴片二极管三极管的封装常见贴片二极管/三极管的封装常见贴片二极管/三极管的封装二极管：名称尺寸及焊盘间距其他尺寸相近的封装名称SMCSMB精选公文范文--------------------- 精选公文范文 ---------------- SMA SOD-106SC-77ASC-76/SC-90ASC-79三极管：LDPAKDPAK SC-63SOT-223 SC-73TO-243/SC-62/UPAK/MPT3 SC-59A/SOT-346/MPAK/SMT3 SOT-323 SC-70/CMPAK/UMT3 SOT-523 SC-75A/EMT3SOT-623 SC-89/MFPAKSOT-723SOT-923 VMT3篇三：常用二极管的识别及ic封装技术常用晶体二极管的识别晶体二极管在电路中常用理加数字表示，如：D5表示编号为5的二极管。

1、作用：二极管的主要特性是单向----- 精选公文范文---------- 2--------------------- 精选公文范文----------------导电性，也就是在正向电压的作用下，导通电阻很小;而在反向电压作用下导通电阻极大或无穷大。

正因为二极管具有上述特性，无绳电话机中常把它用在整流、隔离、稳压、极性保护、编码控制、调频调制和静噪等电路中。

电话机里使用的晶体二极管按作用可分为：整流二极管（如1N4004）、隔离二极管（如1N4148）、肖特基二极管（如BAT85）、发光二极管、稳压二极管等。

DO-214AA封装SOCAY瞬态抑制二极管SMBJ7.0A型号
硕凯电子（Sylvia）
一、产品图
1、为表面安装应用优化电路板空间
2、低泄漏
3、单向单元
4、玻璃钝化结
5、低电感
6、优良的钳位能力
7、600W的峰值功率能力在10×1000μ波形重复率（占空比）：0.01%
8、快速响应时间：从0伏特到最小击穿电压通常小于1.0ps
9、典型的，在电压高于12V时，反向漏电流小于5μA
10、高温焊接：终端260°C/40秒
11、典型的最大温度系数△Vbr=0.1%x Vbr@25°C x△T
12、塑料包装有保险商实验室可燃性94V-0
13、无铅镀雾锡
14、无卤化，符合RoHS
15、典型失效模式是在指定的电压或电流下出现
16、晶须测试是基于JEDEC JESD201A每个表4a及4c进行的
17、IEC-61000-4-2ESD15kV(空气)，8kV(接触)
18、数据线的ESD保护符合IEC61000-4-2(IEC801-2)
19、数据线的EFT保护符合IEC61000-4-4(IEC801-4)
三、应用范围
TVS器件非常适合保护I/O接口，Vcc总线和其他应用于电信、计算机、工业和消费电子应用的易损电路。

五、UL认证编号
六、I-V曲线特性
七、产品尺寸
八、命名方式
九、型号标识
十、封装说明。

A.General Description 简要概述半导体放电管器件专门用来防止敏感的电信设备、POS 终端、基站设备、网络视频等设备出现由闪电、电源接触和电源感应引起的过压故障危险。

它们具有高电气浪涌抑制能力，有助于防止瞬间故障和断开状态的高阻抗，使系统的正常运行过程变得实际上更加透明。

广泛应用在：网络通迅及消费类电子产品、高速数据传输设备（T1/E1、XDSL、ISDN、HDSL、CATV、SLIC 等）。

经典应用：电话信号接口防护、RS485、RS232、RS422等数据接口。

产品特点产品特点:: 精确导通电压、快速响应 超强的浪涌处理能力 双向对称,可靠性高 安装简便，器件体积小分SMA、SMB 贴片型/DO-15、TO-92直插型 符合ROHS 要求满足通信产品标准要求SMA/DO-214ACB.Dimension产品尺寸D.Surge Ratings 浪涌额定值E.Product Terminology 产品术语Electrical Parameters电气参数V DM :Repetitive peak Off-state Voltage 最高峰值电压，器件可保持关断状态，也即：不正作峰值电压VBo:Switching Voltage半导体雪崩或开关切换动作电压Ipp ：Surge Ratings最大额定峰值脉冲电流I DM ：Off-state current在V DM 下最大泄漏电流值I H Min ：Minimum Holding current 导通状态最小电流C ：O ff-state Capacitance 不工作状态下器件电容值di/dt ：Rate of Rise of Current 电流上升率dv/dt ：Rate of Rise of Voltage电压上升率F.Thermal Considerations温度特性考虑封装形式Symbol符号Parameter参数Value值SMA/Do-214ACT J Operating Junction Temperature Range工作温度范围-40~+150℃T S Storage Temperature Range贮存温度范围-55~+150℃RØJA Thermal Resistance:Junction to Ambient90℃/WG.Part Name Information 产品命名信息H.Packing information 包装信息505000PCS/Reel 00PCS/Reel1010000PCS 000PCS /BOX50,000PCS /CartonNOTE:ALL DATA AND SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE.注意注意：：所有的规格、参数更新将不例行通知。

JKS’S TSS-1-CONTENTS Contents (2)High Reliability Experiment Lis t…………………………………………3-4SMA(DO-214AC)Series…………………………………………………5-9SMB(DO-214AA)Series…………………………………………………10-14TO-92Series…………………………………………………15-19 DO-41/15/27Series…………………………………………………20-25-2-High reliability Experiment List可靠性试验项目NO.ExperimentItemTimeor CycleExperimentConditionsReference1HighTemperatureReverse Bias96-180H①T A=125±5℃forO/J②T A=150±5℃for GPPBias=80%VR for allMIL-STD-750DMETHOD-10382Steady-stateOperation Life168-1000HRated average rectifiercurrentIO=IF(AV)@TA=25℃MIL-STD-750DMETHOD-10273HT Storage168-1000H TA=150±5℃MIL-STD-750D METHOD-10314IntermittentOperation Life1000CYCLE ON=5Min with rated IOMIL-STD-750DMETHOD-10365TemperatureCycling(air toair)10CYCLETH=150+3/-0℃10MinTL=-55+0/-3℃10MinTransfer time=5minMIL-STD-750DMETHOD-10516Thermal Shock10CYCLE 0℃/5MIN100℃/5MINMIL-STD-750DMETHOD-10567Soldering Heat10SEC260±5℃MIL-STD-750D METHOD-1031High reliability Experiment List可靠性试验项目-3-NO.ExperimentItemTimeor CycleExperimentConditionsReference8Lead pull10SEC 1Kg in axial leaddirectionMIL-STD-750DMETHOD-10369Lead Fatigue3TIMES 0.5Kg weight applied toeach lead bending are90±5℃MIL-STD-750DMETHOD-103610UnbiasedAutoclave Test4/8/16/24HT A=121±2℃P=29.7Psia/205KPaRH=100%11ForwordSurgeCurrent1PULSE8.3mS or10mS singlehalf sinewavesuperimposed on ratedloadMIL-STD-750DMETHOD-106612Solderability10SEC245±5℃ANSI/J-STD-B10 2-EJKS’S TSS SMA Series-4-Features◆Bi-directional crowbar transient voltage protection◆High surge capability◆High off-state impedance◆Low leakage current◆Low on-state voltage◆Short-circuit failure mode DO-214AC(SMA)Main ApplicationELA’s thyristor surge protector devices are designed to help protect sensitive telecommunication equipment from the hazards caused by lighning,power contact,and power induction.These devices enable equipment to comply with various regulatory requirements including GR1089,ITU K.20,K.21and K.45,IEC 60950,UL60950,and TIA-968-A(formerly known as FCC Part68).Typical application including:●Central office switching equipment.Analog and digital linecards(xDSL,T1/E1,ISDN……)●Customer Premises Equipment(CPE)such as phones,fax machines,modems,POSterminals,PBX systems and caller ID adjunct boxes.●Primary protection modules including Main Distribution Frames(MDF),buildingentrance equipment and station protection modules.●Access network equipment such as remote terminals,linerepeaters,multiplexers,cross-connects,WAN equipment,Network Interface Devices(NID).●Data lines and security systems.●CATV line amplifiers and power inserters.●Sprinkler systems.Electrcal Characteristics(Tamb=25℃)-5--6-General Notes:◆All measurements are made at an ambient temperature of 25℃.Ipp applies to -40℃through +85℃temperature range.◆Special voltage(VBO and VDRM)and holding current(IH)requirements are available up onrequest.◆Off-state capacitance (C O )is measured at 1MHz with a 2V bias and is typical value.Electrical Parameters (Tamb=25℃)Part NumberVDRM IDRM VBO IBO VT IT `IH CO Min.Max.Max.Max.Max.Max.Min.Max.V uA V mA V A mA pF P0080TA 65258004 2.25050P0300TA 255408004 2.25070P0640TA 585778004 2.215050P0720TA 655888004 2.215050P0900TA 755988004 2.215045P1100TA 9051308004 2.215045P1300TA 12051608004 2.215045P1500TA 14051808004 2.215040P1800TA 17052208004 2.215040P2000TA 180******** 2.215040P2300TA 19052608004 2.215035P2600TA 22053008004 2.215035P3100TA 27553508004 2.215030P3500TA 32054008004 2.215030P3800TA 36054608004 2.215025P4200TA 400554080042.215025-7-SymbolParameterSymbolParameterV DRMStand-off voltage,is measured at IDRMI H Holding current I DRMLeakage current,is measured at VDRMI TON-state current V BO Breakover voltage,is measured at 100V/μsV TOn-state voltage I BOBreadover currentC OOff-state capacitance ismeasured in V DC =2V@1M HZSurge RatingsSeriesI PP2x10µs AmpsI PP 8x20µs Amps I PP 10x160µs Amps I PP 10x560µs Amps I PP10x1000µs Amps I TSM 60Hz Amps di/dt Amps/µs A15015090504520500Thermal ConsiderationsElectrical Characteristics CurvesPackage SMA(DO-214AC)Symbol Parameter Value Unit T J Operating Junction Temperature-40to +150℃T S Storage Temperature Range -40to +150℃R θJAJunction to Ambient on printedcircuit90℃/WFigure1V-I Characteristics Figure2tr x td Pulse Wave-formFigure3Normalized V S Change versus Figure4Normalized DC Holding Current Junction Temperature versus Case TemperatureProduct DimensionsB-8-Dime-nsionInches Millimeters M IN M AX M IN M AXA0.0980.114 2.50 2.90B0.1880.208 4.80 5.28C0.0550.062 1.40 1.60D0.1570.181 4.00 4.60E0.0300.0600.76 1.52F0.0780.096 2.00 2.44H0.0800.104 2.051 2.643 Summary of Packing OptionsPackage Type Description PackingQuantityIndustryStandardDO-214AC(SMA)Embossed CarrierReel Pack5000PCS EIA-481-D JKS’S TSS SMB Series-9-Features◆Bi-directional crowbar transient voltage protection◆High surge capability◆High off-state impedance◆Low leakage current◆Low on-state voltage◆Short-circuit failure mode DO-214AA(SMB)Main ApplicationELA’s thyristor surge protector devices are designed to help protect sensitive telecommunication equipment from the hazards caused by lighning,power contact,and power induction.These devices enable equipment to comply with various regulatory requirements including GR1089,ITU K.20,K.21and K.45,IEC 60950,UL60950,and TIA-968-A(formerly known as FCC Part68).Typical application including:●Central office switching equipment.Analog and digital linecards(xDSL,T1/E1,ISDN……)●Customer Premises Equipment(CPE)such as phones,fax machines,modems,POSterminals,PBX systems and caller ID adjunct boxes.●Primary protection modules including Main Distribution Frames(MDF),buildingentrance equipment and station protection modules.●Access network equipment such as remote terminals,linerepeaters,multiplexers,cross-connects,WAN equipment,Network Interface Devices(NID).●Data lines and security systems.●CATV line amplifiers and power inserters.●Sprinkler systems.Electrcal Characteristics(Tamb=25℃)-10--11-General Notes:◆All measurements are made at an ambient temperature of 25℃.Ipp applies to -40℃through +85℃temperature range.◆Special voltage(VBO and VDRM)and holding current(IH)requirements are available up onrequest.◆Off-state capacitance (C O )is measured at 1MHz with a 2V bias and is typical value.Electrical Parameters (Tamb=25℃)PartNumberVDRMIDRM VBO IBO VT IT `IH CO Min.Max.Max.Max.Max.Max.Min.Max.V uA V mA V A mA pFA B C P0080S_65258004 2.2505075100P0300S_255408004 2.2507075100P0640S_585778004 2.21505065100P0720S_655888004 2.21505065100P0900S_755988004 2.2150456090P1100S_9051308004 2.2150456090P1300S_12051608004 2.2150456090P1500S_14051808004 2.2150406085P1800S_17052208004 2.2150406085P2000S_180******** 2.2150406085P2300S_19052608004 2.2150355580P2600S_22053008004 2.2150355080P3100S_27553508004 2.2150304565P3500S_32054008004 2.2150304065P3800S_36054608004 2.2150254045P4200S_400554080042.2150254045-12-SymbolParameterSymbolParameterV DRM Stand-off voltage,is measured at IDRMI DRMLeakage current,is measured atVDRM I H Holding currentI T ON-state current V BO Breakover voltage,is measured at 100V/μs C OOff-state capacitance ismeasured in VDC=2V@1MHZI BOBreadover currentV TOn-state voltageSurge RatingsSeries I PP2x10µs Amps I PP 8x20µs Amps I PP 10x160µs Amps I PP 10x560µs Amps I PP10x1000µs Amps I TSM 60Hz Amps di/dt Amps/µs A 15015090504520500B 2502502502008030500C50040020015010050500Thermal ConsiderationsElectrical Characteristics CurvesPackage SMB(DO-214AA)Symbol Parameter Value Unit T J Operating Junction Temperature -40to +150℃T S Storage TemperatureRange -40to +150℃R θJAJunction to Ambient on printed circuit90℃/WFigure1V-I Characteristics Figure2tr x td Pulse Wave-formFigure3Normalized V S Change versus Figure4Normalized DC Holding Current Junction Temperature versus Case TemperatureProduct Dimensions-13--14-Dime-n sion Inches Millimeters M IN M AX M IN M AX A 0.1340.155 3.40 3.94B 0.2050.22 5.21 5.59C 0.0750.083 1.90 2.11D 0.1660.185 4.22 4.70E 0.0360.0560.91 1.42F 0.0730.087 1.85 2.2G 0.0020.0080.050.20H 0.0770.094 1.95 2.40J 0.0430.053 1.09 1.35K 0.0080.0140.200.35L0.0390.0490.991.24Summary of Packing OptionsPackage Type DescriptionPacking QuantityIndustry StandardDO-214AA(SMB)Embossed CarrierReel Pack3000PCSEIA-481-DJKS’S TSS TO-92SeriesAC DB H KEJFLG.079(2.0).079(2.0)0.110(2.8)Features◆Bi-directional crowbar transient voltage protection◆High surge capability◆High off-state impedance◆Low leakage current◆Low on-state voltage◆Short-circuit failure mode TO-92Main ApplicationELA’s thyristor surge protector devices are designed to help protect sensitive telecommunication equipment from the hazards caused by lighning,power contact,and power induction.These devices enable equipment to comply with various regulatory requirements including GR1089,ITU K.20,K.21and K.45,IEC 60950,UL60950,and TIA-968-A(formerly known as FCC Part68).Typical application including:●Central office switching equipment.Analog and digital linecards(xDSL,T1/E1,ISDN……)●Customer Premises Equipment(CPE)such as phones,fax machines,modems,POSterminals,PBX systems and caller ID adjunct boxes.●Primary protection modules including Main Distribution Frames(MDF),buildingentrance equipment and station protection modules.●Access network equipment such as remote terminals,linerepeaters,multiplexers,cross-connects,WAN equipment,Network Interface Devices(NID).●Data lines and security systems.●CATV line amplifiers and power inserters.●Sprinkler systems.Electrcal Characteristics(Tamb=25℃)-15--16-General Notes:◆All measurements are made at an ambient temperature of 25℃.Ipp applies to -40℃through +85℃temperature range.◆Special voltage(VBO and VDRM)and holding current(IH)requirements are available up onrequest.◆Off-state capacitance (C O )is measured at 1MHz with a 2V bias and is typical value.Electrical Parameters (Tamb=25℃)PartNumberVDRMIDRM VBO IBO VT IT `IH CO Min.Max.Max.Max.Max.Max.Min.Max.V uA V mA V A mA pFA B C P0080E_65258004 2.2505075100P0300E_255408004 2.2507075100P0640E_585778004 2.21505065100P0720E_655888004 2.21505065100P0900E_755988004 2.2150456090P1100E_9051308004 2.2150456090P1300E_12051608004 2.2150456090P1500E_14051808004 2.2150406085P1800E_17052208004 2.2150406085P2000E_180******** 2.2150406085P2300E_19052608004 2.2150355580P2600E_22053008004 2.2150355080P3100E_27553508004 2.2150304565P3500E_32054008004 2.2150304065P3800E_36054608004 2.2150254045P4200E_400554080042.2150254045-17-SymbolParameterSymbolParameterV DRM Stand-off voltage,is measured at IDRMI DRMLeakage current,is measured atVDRM I H Holding currentI T ON-state current V BO Breakover voltage,is measured at 100V/μs C OOff-state capacitance ismeasured in VDC=2V@1MHZI BOBreadover currentV TOn-state voltageSurge RatingsSeries I PP2x10µs Amps I PP 8x20µs Amps I PP 10x160µs Amps I PP 10x560µs Amps I PP10x1000µs Amps I TSM 60Hz Amps di/dt Amps/µs A 15015090504520500B 2502502502008030500C50040020015010050500Thermal ConsiderationsElectrical Characteristics CurvesPackage SMB(DO-214AA)Symbol Parameter Value Unit T J Operating Junction Temperature -40to +150℃T S Storage TemperatureRange -40to +150℃R θJAJunction to Ambient on printed circuit90℃/WFigure1V-I Characteristics Figure2tr x td Pulse Wave-formFigure3Normalized V S Change versus Figure4Normalized DC Holding Current Junction Temperature versus Case TemperatureProduct Dimensions-18--19-Summary of Packing OptionsPackage Type DescriptionPacking QuantityIndustry StandardDO-214AA(SMB)Buck Pack2000PCSN/AJKS’S TSS DO-41/15/27SeriesDime-n sion Inches Millimeters M IN M AX M IN M AX A 0.1760.1964.47 4.98B 0.512.7D 0.0950.105 2.41 2.67E 0.15 3.81F 0.0460.054 1.16 1.37G 0.1350.145 3.43 3.68H 0.0880.096 2.23 2.44J 0.1760.186 4.47 4.73K 0.0880.096 2.23 2.44L 0.0130.0190.330.48M 0.0130.0170.330.43N0.06 1.52Features◆Bi-directional crowbar transient voltage protection◆High surge capability◆High off-state impedance◆Low leakage current◆Low on-state voltage◆Short-circuit failure mode DO-41/15/27Main ApplicationELA’s thyristor surge protector devices are designed to help protect sensitive telecommunication equipment from the hazards caused by lighning,power contact,and power induction.These devices enable equipment to comply with various regulatory requirements including GR1089,ITU K.20,K.21and K.45,IEC 60950,UL60950,and TIA-968-A(formerly known as FCC Part68).Typical application including:●Central office switching equipment.Analog and digital linecards(xDSL,T1/E1,ISDN……)●Customer Premises Equipment(CPE)such as phones,fax machines,modems,POSterminals,PBX systems and caller ID adjunct boxes.●Primary protection modules including Main Distribution Frames(MDF),buildingentrance equipment and station protection modules.●Access network equipment such as remote terminals,linerepeaters,multiplexers,cross-connects,WAN equipment,Network Interface Devices(NID).●Data lines and security systems.●CATV line amplifiers and power inserters.●Sprinkler systems.Electrcal Characteristics(Tamb=25℃)-20--21-General Notes:◆All measurements are made at an ambient temperature of 25℃.Ipp applies to -40℃through +85℃temperature range.◆Special voltage(VBO and VDRM)and holding current(IH)requirements are available up onrequest.◆Off-state capacitance (C O )is measured at 1MHz with a 2V bias and is typical value.Electrical Parameters (Tamb=25℃)PartNumberVDRMIDRM VBO IBO VT IT `IH CO Min.Max.Max.Max.Max.Max.Min.Max.V uA V mA V A mA pFA B C P0080L_65258004 2.2505075100P0300L_255408004 2.2507075100P0640L_585778004 2.21505065100P0720L_655888004 2.21505065100P0900L_755988004 2.2150456090P1100L_9051308004 2.2150456090P1300L_12051608004 2.2150456090P1500L_14051808004 2.2150406085P1800L_17052208004 2.2150406085P2000L_180******** 2.2150406085P2300L_19052608004 2.2150355580P2600L_22053008004 2.2150355080P3100L_27553508004 2.2150304565P3500L_32054008004 2.2150304065P3800L_36054608004 2.2150254045P4200L_400554080042.2150254045-22-SymbolParameterSymbolParameterV DRM Stand-off voltage,is measured at IDRMI DRMLeakage current,is measured atVDRM I H Holding currentI T ON-state currentV BO Breakover voltage,is measured at 100V/μs C OOff-state capacitance ismeasuredin VDC=2V@1MHZI BOBreadover currentV TOn-state voltageSurge RatingsSeries I PP2x10µs Amps I PP 8x20µs Amps I PP 10x160µs Amps I PP 10x560µs Amps I PP10x1000µs Amps I TSM 60Hz Amps di/dt Amps/µs A 15015090504520500B 2502502502008030500C50040020015010050500Thermal ConsiderationsElectrical Characteristics CurvesPackage DO-41/15/27Symbol Parameter Value Unit T J Operating Junction Temperature -40to +150℃T S Storage TemperatureRange -40to +150℃R θJAJunction to Ambient on printed circuit70℃/WFigure1V-I Characteristics Figure2tr x td Pulse Wave-formFigure3Normalized V S Change versus Figure4Normalized DC Holding Current Junction Temperature versus Case TemperatureProduct Dimensions-23--24-DO-41DimensionInchesMillimetersNOTEMINMAX MIN MAX A 0.1660.205 4.10 5.20B 0.0800.107 2.00 2.70ΦC 0.0280.0340.700.90ΦD1.00025.40DO-15DimensionInches MillimetersNOTEMINMAXMINMAXA 0.2300.300 5.807.60B 0.1040.140 2.60 3.60ΦC 0.0260.0340.700.90ΦD1.00025.40Product DimensionsCBDDA-25-DO-27DimensionInchesMillimetersNOTEMINMAX MINMAX A 0.3709.50B 0.250 6.40ΦC 0.0480.0521.20 1.30ΦD1.00025.40Summary of Packing OptionsPackage Type DescriptionPacking Quantity Industry StandardDO-41/15/27Tape and ReelPackDO-41DO-15DO-27N/A 5000PCS4000PCS1200PCSCBDDA。

1Surface Mount Ultrafast RectifierUS1A thru US1M FEATURES•Low profile package•Ideal for automated placement •Glass passivated chip junction •Ultrafast reverse recovery time •Low switching losses, high efficiency •High forward surge capability•Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C•Compliant to RoH S Directive 2002/95/EC and in accordance to WEEE 2002/96/EC•Halogen-free according to IEC 61249-2-21 definitionTYPICAL APPLICATIONSFor use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication.MECHANICAL DATACase: DO-214AC (SMA)Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoH S compliant, and commercial gradeTerminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode endPRIMARY CHARACTERISTICSIF(AV) 1.0 A V RRM 50 V to 1000 VI FSM 30 A t rr 50 ns, 75 ns V F 1.0 V, 1.7 V T J max.150 °CDO-214AC (S MA)MAXIMUM RATINGS (T A = 25°C unless otherwise noted)PARAMETERSYMBOLUS1AUS1BUS1DUS1GUS1JUS1KUS1MUNITMaximum repetitive peak reverse voltage V RRM 501002004006008001000V Maximum RMS voltage V RMS 3570140280420560700V Maximum DC blocking voltageV DC 501002004006008001000V Maximum average forward rectified current at T L = 110 °C I F(AV) 1.0A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated loadI FSM 30A Operating and storage temperature rangeT J , T STG- 55 to + 150°C2Note(1)Pulse test: 300 μs pulse width, 1 % duty cycleNote(1)PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areaRATINGS AND CHARACTERSITICS CURVES(T A = 25 °C unless otherwise noted)Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge CurrentELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETERTEST CONDITIONS SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT Maximum instantaneous forward voltage1.0 AV F (1) 1.01.7V Maximum DC reverse current at rated DC blocking voltage T A = 25 °C I R 10μAT A = 100 °C50Maximum reverse recovery timeI F = 0.5 A, I R = 1.0 A,I rr = 0.25 A t rr 5075ns Typical junction capacitance4.0 V, 1 MHzC J1510pFTHERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETERSYMBOL US1AUS1BUS1DUS1G US1JUS1KUS1MUNIT Maximum thermal resistanceR θJA (1)75°C/WR θJL (1)27ORDERING INFORMATION (Example)PREFERRED P/N UNIT WEIGHT (g)PREFERRED PACKAGE CODEBASE QUANTITYDELIVERY MODEUS1J-M3/61T 0.06461T 18007" diameter plastic tape and reel US1J-M3/5AT0.0645AT750013" diameter plastic tape and reelFig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage CharacteristicsFig. 5 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Reverse Leakage Characteristics Fig. 7 - Typical Junction CapacitanceFig. 8 - Typical Transient Thermal Impedance3PACKAGE OUTLINE DIMENSIONS in inches (millimeters)4。

半导体放电管TSS的介绍以及应用领域概述：半导体放电管TSS是基于开关型晶闸管原理和结构的一种二端负阻器件，用于保护敏感易损的集成电路，使之免受瞬间雷电和过电压的冲击而造成的损坏。

高端的固体放电管产品采用了先进的离子注入技术和玻璃钝化工艺，产品具有准确导通、响应速度快、浪涌吸收能力强、可靠性高、稳定性强等特点。

应用领域：由于半导体放电管的开关特性和稳定性等产品优势，因此被广泛应用于交换机、电话机、传真机、配线架、XDSL、ADSL、G-PON、通讯接口、通讯发射设备等一切需要过电压保护的领域，以保护其后端的芯片免受瞬态过电压的冲击和破坏。

在当今世界微电子及通讯设备高速发展的今天，半导体放电管已经成为通讯和消费类电子行业过压保护的首选分立器件。

半导体放电管的正确选用方法：1、反向击穿电压VBR必须大于被保护电路的最大工作电压。

如在POTS应用中，最大振铃电压(150V)的峰值电压(150*1.41=212.2V)和直流偏压峰值(56.6V)之和为268.8V，所以应选择VBR大于268.8V的器件。

又如在ISDN应用中，最大DC电压(150V)和最大信号电压(3V)之和为153V，所以应选择VBR大于153V的器件。

2、转折电压VBO必须小于被保护电路所允许的最大瞬间峰值电压。

3、若要使半导体放电管通过大的浪涌电流后自复位，器件的维持电流IH必须大于系统所能能提供的电流值。

即：IH(系统电压/源阻抗)。

4、最大瞬间峰值电流IPP必须大于通讯设备标准的规定值。

如FCC Part68A类型的IPP应大于100A；Bellcore 1089的IPP应大于25A。

5、半导体放电管处于导通状态(导通)时，所损耗的功率P应小于其额定功率Pcm，Pcm=KVT*IPP，其中K由短路电流的波形决定。

对于指数波，方波，正弦波，三角波K值分别为1.00，1.4，2.2，2.8。

本文由深圳市瑞隆源电子有限公司提供，专业制造各种防雷器，避雷器，放电管，陶瓷气体放电管等。

gdt半导体放电管GDT半导体放电管（Gas Discharge Tube）是一种常见的气体放电保护元件，也称为气体放电管或气体放电保护器。

它具有放电电压低、响应速度快、寿命长等优点，被广泛应用于电子设备和电力系统中，起到保护电路和设备的作用。

GDT半导体放电管的结构相对简单，由两个电极和一个填充有特定气体的玻璃管组成。

常见的填充气体有氮气、氩气等。

当电路中的电压超过设定的阈值时，GDT放电管会发生气体放电现象，将过电压转移到地或其他接地点，从而保护电路中的其他元件不受损害。

GDT半导体放电管的特点之一是其放电电压低。

一般来说，GDT放电管的放电电压范围在几百伏特到几千伏特之间，不同型号的GDT 放电管具有不同的放电电压。

当电路中的电压超过GDT放电管的放电电压时，它会迅速导通，使过电压得到释放，起到保护作用。

这种低放电电压的特点使得GDT放电管在电子设备中广泛应用，如通信设备、计算机、电源系统等。

GDT半导体放电管的响应速度也是其重要特点之一。

由于GDT放电管的结构简单，其响应速度非常快，一般在纳秒级别。

这意味着当电路中出现过电压时，GDT放电管能够迅速响应并放电，以保护电路中的其他元件。

这种快速响应的特点对于电子设备的保护至关重要，可以有效防止过电压对设备造成损害。

GDT半导体放电管具有较长的寿命。

由于其工作原理是利用气体放电来保护电路，相对于其他电子元件来说，GDT放电管的寿命更长。

一般情况下，GDT放电管的寿命可达到数万次甚至更多。

这使得GDT放电管成为一种可靠的保护元件，能够在长时间内稳定工作，为电子设备提供持久的保护。

值得一提的是，GDT半导体放电管在保护电路时需要与其他保护元件（如熔断器、过压保护器等）配合使用，以构建完整的保护系统。

不同的保护元件在电路中发挥不同的作用，共同确保电路和设备的安全运行。

总结起来，GDT半导体放电管是一种常见的气体放电保护元件，具有放电电压低、响应速度快、寿命长等优点。

TSS 半导体放电管产品选型指南T hyristor S urge S uppressors Selection Guide版权及最终解释权归君耀电子（BrightKing）所有V2，2018目录1TSS工作原理 (3)2TSS特点 (3)3TSS典型应用电路 (4)4TSS参数说明 (4)4.1.V DRM，I DRM (4)4.2.I H (5)4.3.V T，I T (6)4.4.V S，I S (6)4.5.V PP，I PP (6)5TSS选型注意事项 (7)5.1.反向截止电压（V DRM） (7)5.2.TSS的续流问题 (7)5.3.封装形式 (7)6TSS命名规则 (7)7君耀电子（BrightKing）TSS产品线 (8)1 TSS 工作原理TSS （Thyristor Surge Suppressors ），浪涌抑制晶闸管，也称半导体放电管，是采用半导体工艺制成的PNPN 结四层结构器件，其伏安特性（如图1）类似于晶闸管，具有典型的开关特性。

TSS 一般并联在电路中应用，正常工作状态下TSS 处于截止状态，当电路中由于感应雷、操作过电压等出现异常过电压时，TSS 快速导通泄放由异常过电压导致的异常过电流，保护后端设备免遭异常过电压的损坏，异常过电压消失后，TSS 又恢复至截止状态。

图2是TSS 第一象限放大图，TSS 的开关特性包含四个区域：断态区、击穿区、负电阻区和通态区。

断态区：是电压—电流特性的高电阻、低电流区。

该区域从原点延伸至击穿起始点。

断态电流是结反向电流和所有表面漏电流的综合，在该区可施加反向截止电压（V DRM ）测量TSS 的漏电流（I DRM ）。

击穿区：击穿区是电压—电流特性的低电阻、高电压区域。

该区域是从电压—电流特性的高动态电阻的低电流部分开始变化，至显著的低动态电阻区、电流剧增的区域。

最终当TSS 正反馈出现足以激活开通时，该区域终止。

负电阻区：负电阻区表示从击穿区开关点到通态状态的轨迹。

肖特基整流二极管型号及参数
肖特基整流二极管（Schottky Barrier Diode，简称SBD）是一种具有快速开关特性和低电压损耗的二极管。

其工作原理是通过形成金属和半导体之间的肖特基势垒来导电。

以下是一些常见的肖特基整流二极管型号及其参数介绍：
1.BAT54C：
-最大正向电流：600mA
-最大反向电压：30V
-正向压降：0.37V（I=0.1A）
- 导通时间：4ns
2.BAT46W：
-最大正向电流：150mA
-最大反向电压：100V
-正向压降：0.4V（I=0.1A）
- 导通时间：5ns
3.BAT41：
-最大正向电流：100mA
-最大反向电压：40V
-正向压降：0.45V（I=0.1A）
- 导通时间：8ns
4.BAT54S：
-最大正向电流：300mA
-最大反向电压：30V
-正向压降：0.26V（I=0.2A）
- 导通时间：6ns
5.BAT54:
-最大正向电流：600mA
-最大反向电压：30V
-正向压降：0.41V（I=0.1A）
- 导通时间：4ns
6.BAT85:
-最大正向电流：1A
-最大反向电压：30V
-正向压降：0.37V（I=0.1A）
- 导通时间：1ns
以上只是一些常用的肖特基整流二极管型号，实际上市场上还有很多其他型号的肖特基整流二极管。

不同型号的肖特基整流二极管具有不同的正向电流、反向电压、正向压降和导通时间等参数，可以根据具体应用需求选择合适的型号。

Features!!!!!Low voltage overshoot Low on-state voltageDoes not degrade surge capability after multiplesurge events within limitFails short circuit when surged in excess of ratings Low Capacitance2/10S 18/20S 110/160S 110/560S 110/1000S 15/310S 12/10S 21.2/50S 210/160S 210/560S 210/1000S 210/700S 2I TSM 50/60Hz di/dt SeriesA minA min A min A min A min A min A min Amps/µs maxC50040020015010015050500Notes:1.Current waveform in µs2.Voltage waveform in µs-Peak pulse current rating (I PP ) is repetitive and guaranteed for the life of the product. - I PP ratings applicable over temperature range of -40C to +85C-The device must initially be in thermal equilibrium with -40°C < T J < +150°CT J Operating Junction Temperature Range- 40 to +150 °C T S Storage Temperature Range - 40 to +150°C R θJAThermal Resistance:Junction to Ambient90°C/WSurgeRatingsSymbol ParameterValue Unit Thermal Considerations!!Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number!Mechanical DataCase: SMB/DO-214AA, Molded Plastic Weight: 0.093 grams (approx.)THYRISTOR SURGE SUPPRESSORS TSS深圳市赛特微电子有限公司C V DRM@I DRM =5AV S@100V/SV T@I T =2.2AI S I T I H 0@1MHzPart Number V min V max V max mA max A max mA min pF min pF max P0080SC 6 25 4 800 2.2 50 25 150 P0300SC 25 40 4 800 2.2 50 15 140 P0640SC 58 77 4 800 2.2 150 40 60 P0720SC 65 88 4 800 2.2 150 35 60 P0900SC 75 98 4 800 2.2 150 25 55 P1100SC 90 130 4 800 2.2 150 30 50 P1300SC 120 160 4 800 2.2 150 25 45 P1500SC 140 180 4 800 2.2 150 25 40 P1800SC 170 220 4 800 2.2 150 25 35 P2000SC 180 220 4 800 2.2 150 20 35 P2300SC 190 260 4 800 2.2 150 25 35 P2600SC 220 300 4 800 2.2 150 20 35 P3100SC 275 350 4 800 2.2 150 20 35 P3500SC 320 400 4 800 2.2 150 20 35 P4000SC 360 460 4 800 2.2 150 20 35 P4500SC 400 540 4 800 2.2 150 20 35 P5000SC44060048002.21502035Notes:-Absolute maximum ratings measured at T A = 25C (unless otherwise noted). - Devices are bi-directional.1005050rdt –Time (μs)I p p –P e a k P u l s e C u r r e n t - %I p p-40 -200 20 40 60 80 100 120 140 160Junction Temperature (T J )-1412 10 8 6 4 2 9 -4 -6 -8P e r c e n t o fV S C h a n g e - %-40 -20 0 20 40 60 80 100 120 140160Case Temperature (TC)-2.0 1.81.6 1.4 1.2 1.0 0.8 0.6 0.4R a t i o n o f I H I H (T C =25℃)+I -I-V+VFigure 1 - V-I Characteristics Figure 3-Normalized V S Change Versus JunctionTemperatureFigure 2- t r ×t d Pulse WaveformFigure 4 -Normalized DC HoldingCurrent Versus CaseTemperature。

肖特基二极管故障率
肖特基二极管（SBD）是一种半导体二极管，具有较高的开关速度和较低的正向电压降。

关于肖特基二极管的故障率，目前没有确切的统计数据。

但我们可以从其材料、制作工艺和应用方面进行分析。

1. 材料：肖特基二极管主要采用硅材料制作，具有良好的半导体性能。

硅材料制成的二极管具有较高的稳定性，故障率相对较低。

2. 制作工艺：肖特基二极管的制作工艺不断改进，提高了产品质量和可靠性。

现代制作工艺可以确保二极管具有较低的故障率。

3. 应用领域：肖特基二极管广泛应用于各种电子设备中，如电源、放大器、整流器等。

在合理的使用条件下，其故障率应该是很低的。

4. 环境因素：肖特基二极管的故障率受到环境因素的影响，如温度、湿度、振动等。

在良好的环境下使用，可以降低故障率。

5. 质量控制：在生产过程中，严格的质量控制和检测可以确保肖特基二极管的可靠性和故障率。

综合以上因素，我们可以认为肖特基二极管的故障率较低。

但具体的故障率数据需要根据实际应用情况和制造商的数据来评估。

在实际应用中，合理的选择和使用肖特基二极管，可以降低故障风险。

同时，对于重要的应用场景，建议采取冗余设计和故障检测措施，以确保系统的可靠性和安全性。