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2SK1191资料

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Absolute Maximum RatingsElectrical CharacteristicsSymbolRatingsUnitVDSS 60V(BR) DSS60VID = 250µA, VGS = 0VVVGSS±20IGSS±500nAVGS = ±20VVID±30IDSS250µAVDS = 60V, VGS = 0VAID (pulse)(Ta = 25ºC)(Ta = 25ºC)

VTH2.04.0VVDS = 10V, ID = 250µAAPD40 (Tc = 25ºC)Re (yfs)13 20SVDS = 10V, ID = 15AWEAS 38RDS (on)0.021 0.028ΩVGS = 10V, ID = 15AmJTch150

*: VDD = 25V, L = 50µH, IL = 30A, unclamped, See Figure 1 on Page 5.Ciss2500 pFVDS = 25V, f = 1.0MHz,VGS = 0VID = 15A, VDD = 30V,VGS = 10V, See Figure 2 on Page 5.ºCTstg–55 to +150Coss1200 pFºCton180nstoff120nsSymbolUnitConditionsRatingstypmaxmin

21*

01530

20

100V 4.5VGS=5.5V

5V10VV 10VGS=

0010203010203040

–5000501001501020304010

5102002030V 10VDS=

25ºC125ºC

0.050.30.10.55500.5150V 10VDS=25ºC125ºC

010010203040505001000500010000V 0VGS=f 1MHz=CissCossCrss000.20.40.60.81.4102030

V 0VGS=5V0246810

012

I 30AD=I 15AD=V 10VGS=I 15AD=T 55ºCC=–T 55ºCC=–

0.50.5151050100151050100200ID (pulse) maxDI max1ms100µsDC OPERATION10ms (1shot)LIMITED

010203040

050100150With infinite heatsinkWithout heatsink234

105

110

1.01.210V2SK1191External dimensions 1 ...... FM20

±120 (Tch 150ºC)

(Tc=25ºC)RDS(ON) (mΩ) RDS(ON) (mΩ)

Re (yfs) (S)

Capacitance (pF)

Ta (ºC)VDS (V)VDS — ID Characteristics

ID — Re (yfs) Characteristics

VDS — Capacitance CharacteristicsVSD — IDR CharacteristicsTa — PD CharacteristicsSafe Operating AreaVGS — VDS CharacteristicsTC — RDS (ON) CharacteristicsVGS — ID CharacteristicsID — RDS (ON) Characteristics

VDS (V)VDS (V)VSD (V)IDR (A)ID (A)PD (W)Tc (ºC)VGS (V)ID (A)VGS (V)VDS (V)ID (A)ID (A)ID (A)

RDS (ON)元器件交易网www.cecb2b.com

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2SK3666-3-TB-E;2SK3666-2-TB-E;中文规格书,Datasheet资料

2SK3666-3-TB-E;2SK3666-2-TB-E;中文规格书,Datasheet资料

2SK3666

No.8158-1/6Applications

• Low-frequency general-purpose amplifi er, impedance conversion, infrared sensor applications

Features

• Small IGSS

• Small Ciss

Specifi cations

Absolute Maximum Ratings

at Ta=25°C

ParameterSymbolConditionsRatingsUnit

Drain-to-Source VoltageVDSX30V

Gate-to-Drain Voltage VGDS--30V

Gate CurrentIG10mA

Drain CurrentID10mA

Allowable Power DissipationPD200mW

Junction TemperatureTj150°C

Storage TemperatureTstg--55 to +150°C

Package Dimensions

unit : mm (typ)

7013A-011Ordering number : EN8158B

62012 TKIM/D2805GM IMMS TB-00001984 / 31505GB TSIM TA-100303SANYO Semiconductors

DATA SHEET

2SK3666N-Channel Junctin Silicon FETLow-Frequency General-Purpose Amplifi er,

Impedance Converter Applications

/en/networkProduct & Package Information

• Package : CP

• JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB

2SK3692-01中文资料

2SK3692-01中文资料

1

ItemSymbolRatingsUnitDrain-source voltageVDS450VDSX *5450Continuous drain currentID±17Pulsed drain currentID(puls]±68Gate-source voltageVGS±30Repetitive or non-repetitiveIAR *217Maximum Avalanche EnergyEAS *1221.9Maximum Drain-Source dV/dtdVDS/dt *420Peak Diode Recovery dV/dtdV/dt *35Max. power dissipationPD Ta=25°C2.02 Tc=25°C225Operating and storageTch+150temperature rangeTstg Electrical characteristics (Tc =25°C unless otherwise specified)

Thermalcharacteristics2SK3692-01FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25°C unless otherwise specified)

Item Symbol Test ConditionsZero gate voltage drain current IDSSVDS=450V VGS=0VVDS=360V VGS=0V VGS=±30V ID=8.5A VGS=10VID=8.5A VDS=25VVCC=300V ID=8.5AVGS=10VRGS=10 ΩMin. Typ. Max. UnitsVVµAnAΩSpF

2SK1670中文资料

2SK1670中文资料

2SK1670Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• Built-in fast recovery diode (trr = 90 ns)

• Suitable for motor control, switching regulator and DC – DC converter

Outline

TO-3PFM

1. Gate2. Drain3. SourceD

G

S1232SK1670

2Absolute Maximum Ratings (Ta = 25°C)

ItemSymbolRatingsUnit

Drain to source voltageVDSS250V

Gate to source voltageVGSS±30V

Drain currentID30A

Drain peak currentID(pulse)*1120A

Body to drain diode reverse drain currentIDR30A

Channel dissipationPch*260W

Channel temperatureTch150°C

Storage temperatureTstg–55 to +150°C

Notes1.PW ≤ 10 µs, duty cycle ≤ 1%2.Value at TC = 25°C2SK1670

3Electrical Characteristics (Ta = 25°C)

ItemSymbolMinTypMaxUnitTest conditions

Drain to source breakdownvoltageV(BR)DSS250——VID = 10 mA, VGS = 0

2SK3575-ZK资料

2SK3575-ZK资料

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.MOS FIELD EFFECT TRANSISTOR

2SK3575

SWITCHING

N-CHANNEL POWER MOS FETDATA SHEET

Document No. D16261EJ2V0DS00 (2nd edition)

Date Published September 2002 NS CP(K)Printed in Japan

©

2002The mark ! shows major revised points.DESCRIPTION

The 2SK3575 is N-channel MOS FET device that

features a low on-state resistance and excellent switching

characteristics, designed for low voltage high current

applications such as DC/DC converter with synchronous

rectifier.

FEATURES

•4.5V drive available

•Low on-state resistance

R

DS(on)1 = 4.5 mΩ MAX. (V

GS = 10 V, I