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ST1413AC中文资料

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-3.4A
DESCRIPTION
The ST1413AC is the P-Channel logic enhancement mode power field effect transistors. It is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOD-353 (SC-70)
1.4.5.Drain
2.Gate
3.Source
Page 1
FEATURE
z -20V/-3.4A, R DS(ON) = 130m-ohm
@VGS = -4.5V
z -20V/-2.4A, R DS(ON) = 150m-ohm
@VGS = -2.5V z 20V/-1.7A, R DS(ON) = 190m-ohm @VGS = -1.8V
z Super high density cell design for
extremely low R DS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-353 (SC-70) package design
1A : Part Marking Y : Year Code W : Week Code D D S
D G
1AYW
-3.4A
ABSOULTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted )
Parameter Symbol Typical Unit Drain-Source Voltage V DSS -20 V Gate-Source Voltage
V GSS +/-12
V Continuous Drain Current (TJ=150J ) T A =25¢J
T A =70J I D
-2.8 -2.0
A Pulsed Drain Current
I DM -8 A Continuous Source Current (Diode Conduction) I S -1.4 A Power Dissipation
T A =25¢J T A =70J
P D 0.33
0.21
W Operation Junction Temperature T J 150 J Storgae Temperature Range
T STG -55/150 J Thermal Resistance-Junction to Ambient
R c
JA 105
J /W
Page 2
-3.4A
ELECTRICAL CHARACTERISTICS ( Ta = 25J Unless otherwise noted )
Parameter Symbol Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V (BR)DSS V GS =0V,I D =-250uA -20
V
Gate Threshold Voltage V GS(th) V DS =V GS ,I D =-250uA -0.4 -1.0V
Gate Leakage Current
I GSS V DS =0V,V GS =+/-12V 100nA
V DS =-20V,V GS =0V -1
Zero Gate Voltage Drain Current
I DSS V DS =-20V,V GS =0V T J =55J
-5
uA
On-State Drain Current I D(on) V DS -5V,V GS =-4.5V -6.0 A
Drain-source On-Resistance R DS(on)
V GS =-4.5V,I D =-2.8A
V GS =-2.5V,I D =-2.0A
V GS =-1.8V,I D =-1.5A
0.1100.1300.1700.1300.1500.190 Forward Transconductance g fs
V DS =-5V,I D =-2.8V 6 S
Diode Forward Voltage V SD
I S =-1.6A,V GS =0V -0.8 -1.2V
Dynamic
Total Gate Charge Qg 4.8 8 Gate-Source Charge Qgs 1.0
Gate-Drain Charge Qgd V DS =-6V,V GS =-4.5V
I D -2.8A 1.0
nC Input Capacitance Ciss 485
Output Capacitance
Coss 85
Reverse Transfer Capacitance Crss
V DS =-6V,V GS =0V
F=1MHz 40
pF 10 25
Turn-On Time
t d(on)
t r 13 60 18 70 Turn-Off Time
t d(off) t f
V DD =-6V,R L =6 I D =-1A,V GEN =-4.5V
R G =6
15 60
nS
Page 3
-3.4A
SOT-353 PACKAGE OUTLINE
Page 4
-3.4A
TYPICAL CHARACTERICTICS (25J Unless noted)
Page 5
TYPICAL CHARACTERICTICS (25J Unless noted)
Page 6
P Channel Enhancement Mode MOSFET ST1413AC -3.4A
P Channel Enhancement Mode MOSFET ST1413AC
-3.4A
TYPICAL CHARACTERICTICS (25J Unless noted)
Page 7。

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NOTICEG The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices.G Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice.G Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions:(i)The devices in this publication are designed for use in general electronic equipment designs such as:--- Personal computers--- Office automation equipment--- Telecommunication equipment [terminal]--- Test and measurement equipment--- Industrial control--- Audio visual equipment--- Consumer electronics(ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as:--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)--- Traffic signals--- Gas leakage sensor breakers--- Alarm equipment--- Various safety devices, etc.(iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as:--- Space applications--- Telecommunication equipment [trunk lines]--- Nuclear power control equipment--- Medical and other life support equipment (e.g., scuba).G If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices.G This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party.G Contact and consult with a SHARP representative if there are any questions about the contents of this publication.。