1N6290CAL中文资料

AOD609中文资料Symbol DeviceTyp Max Units n-ch 17.425°C/W n-ch 5060°C/W R θJC n-ch 4 5.5°C/W p-ch 16.725°C/W p-ch 5060°C/W R θJCp-ch3.55°C/WMaximum Junction-to-Lead CSteady-State ParameterMaximum Junction-to-Ambient A,Dt ≤ 10s R θJA Maximum Junction-to-Ambient A,DR θJA Maximum Junction-to-AmbientA,DSteady-State Steady-State Thermal Characteristics: n-channel and p-channel Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A,Dt ≤ 10s AOD609SymbolMin TypMaxUnits BV DSS 40V 1T J =55°C5I GSS ±100nAV GS(th) 1.7 2.5 3 VI D(ON)30A2430T J =125°C37463140g FS 25S V SD 0.761V I S2A C iss 516650pF C oss 82pF C rss 43pF R g4.6 6.9?Q g (10V)8.310.8nC Q gs 2.3nC Q gd 1.6nC t D(on) 6.4ns t r 3.6ns t D(off)16.2ns t f 6.6ns t rr 1824ns Q rr10nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Input Capacitance V GS =0V, V DS =0V, f=1MHzSWITCHING PARAMETERS Reverse Transfer Capacitance Gate resistanceI S =1A,V GS =0V V GS =10V, I D =12ADiode Forward Voltage V GS =10V, V DS =20V, R L =1.4?, R GEN =3?Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Total Gate Charge V GS =10V, V DS =20V,I D =12AR DS(ON)Static Drain-Source On-ResistanceForward TransconductanceV GS =4.5V, I D =8AV DS =5V, I D =12Am ?Gate Threshold Voltage V DS =V GS I D =250μA On state drain currentV GS =10V, V DS =5V μAGate-Body leakage current V DS =0V, V GS = ±20V N Channel Electrical Characteristics (T J =25°C unless otherwise noted)ParameterConditions STATIC PARAMETERS Drain-Source Breakdown Voltage I D =250μA, V GS =0V I DSS Zero Gate Voltage Drain Current V DS =40V, V GS =0VMaximum Body-Diode Continuous CurrentDYNAMIC PARAMETERS Body Diode Reverse Recovery ChargeI F =12A, dI/dt=100A/μsTurn-Off DelayTime Turn-Off Fall TimeBody Diode Reverse Recovery Time I F =12A, dI/dt=100A/μs V GS =0V, V DS =20V, f=1MHz Output Capacitance A: The value of R θJA is meas ured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating I DSM are based on T J(MAX)=150°C, using the steady state junction-to-ambient thermal resistance.B. The power dissipation P D is based on T J(MA X)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtainedusing <300 μs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.G. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. H. The maximum current rating is limited by bond-wires. Rev0: Nov 2007SymbolMin TypMaxUnits BV DSS -40V -1T J =55°C-5I GSS ±100nA V GS(th)-1.7-2 -3 VI D(ON)-30A3645T J =125°C52655166g FS 22S V SD -0.76-1V I S-2A C iss 9001125pF C oss 97pF C rss 68pF R g14?Q g (-10V)16.221nC Q g (-4.5V)7.29.4nC Q gs 3.8nC Q gd 3.5nC t D(on) 6.2 ns t r 8.4ns t D(off)44.8ns t f 41.2ns t rr 2127ns Q rr14nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.P-Channel Electrical Characteristics (T J =25°C unless otherwise noted)ParameterConditionsSTATIC PARAMETERS Drain-Source Breakdown Voltage I D = -250μA, V GS =0V I DSS Zero Gate Voltage Drain Current V DS = -40V, V GS =0VμA Gate-Body leakage current V DS =0V, V GS = ±20V Gate Threshold Voltage V DS =V GS I D = -250μA On state drain currentV GS = -10V, V DS = -5V m ?V DS = -5V, I D = -12AR DS(ON)Static Drain-Source On-ResistanceForward TransconductanceV GS = -10V, I D = -12AV GS = -4.5V, I D = -8ADiode Forward Voltage I S = -1A,V GS =0V Maximum Body-Diode Continuous CurrentReverse Transfer Capacitance DYNAMIC PARAMETERS Input Capacitance V GS =0V, V DS = -20V, f=1MHz Gate resistance Output Capacitance V GS =0V, V DS =0V, f=1MHzSWITCHING PARAMETERS Total Gate Charge V GS = -10V, V DS = -20V, I D = -12AV GS = -10V, V DS = -20V, R L =1.4?, R GEN =3?Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall TimeGate Source Charge Gate Drain Charge Turn-On DelayTime Total Gate Charge Body Diode Reverse Recovery TimeI F = -12A, dI/dt=100A/μsBody Diode Reverse Recovery Charge I F = -12A, dI/dt=100A/μsA: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P D SM and current rating I DSM are based on T J(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.G. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. H. The maximum current rating is limited by bond-wires. Rev0:Nov 2007。

Features:•Collector-Emitter sustaining voltage-V CEO(sus)= 50V (Minimum) - 2N6109, 2N6290.•DC current gain specified to 7.0 Amperesh FE = 2.3 (Minimum) at I C = 7.0A - 2N6109, 2N6290.•Complementary Silicon Plastic Power Transistors.Dimensions : MillimetresPin 1. Base2. Collector3. Emitter4. Collector (Case).Thermal CharacteristicFigure 1 - Power DeratingElectrical Characteristics (T C = 25°C unless otherwise noted)There are two limitations on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate I reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate.The data of Figure - 6 curve is based on T depending on the power level. Second breakdown pulse limits are valid for duty cycles to 10% provided T thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown.Figure 3 - Turn-Off TimeFigure 2 - Switching Time Test CircuitFigure 4 - DC Current Gain Figure 5 - Turn-On TimeD1 must be fast recovery type, example:MB05300 used above IB = 100mA MSD6100 used below IB = 100mAFigure 7 - Collector Saturation RegionFigure 9 - “ON” Voltage Figure 10 - Collector Cut-Off RegionFigure 8 - CapacitancesNotes:FRANCE –Farnell InOneTel No:++ 33 474 68 99 99Fax No:++33 474 68 99 90–Farnell InOne++ 45 44 53 66 66No:++ 45 44 53 66 02AUSTRIA –Farnell InOneTel No:++ 43 662 2180 680Fax No:++43 662 2180 670GERMANY –Farnell InOneTel No:++ 49 89 61 39 39 39Fax No:++49 89 613 59 01PORTUGAL –Farnell InOneTel No:++ 34 93 475 8804Fax No:++34 93 474 5288ESTONIA –Farnell InOneTel No:++ 358 9 560 7780Fax No:++358 9 345 5411NETHERLANDS –Farnell InOneTel No:++ 31 30 241 7373Fax No:++31 30 241 7333–Farnell InOne++ 44 8701 200 200No:++44 8701 200 201–++ 65 6788 0200No:++65 6788 0300HONG KONG –Farnell-Newark InOneTel No:++ 852 2268 9888Fax No:++852 2268 9899BELGIUM –Farnell InOneTel No:++ 32 3 475 2810Fax No:++32 3 227 3648BRAZIL – Farnell-Newark InOneTel No:++ 55 11 4066 9400Fax No:++55 11 4066 9410IRELAND –Farnell InOneTel No:++ 353 1 830 9277Fax No:++353 1 830 9016SPAIN –Farnell InOneTel No:++ 34 93 475 8805Fax No:++34 93 474 5107CHINA –Farnell-Newark InOneTel No:++86 10 6238 5152Fax No: ++86 10 6238 5022ITAL Y –Farnell InOneTel No:++ 39 02 93 995 200Fax No:++ 39 02 93 995 300SWEDEN –Farnell InOneTel No:++ 46 8 730 50 00Fax No:++46 8 83 52 62MALAYSIA –Farnell-Newark InOneTel No:++ 60 3 7873 8000Fax No:++60 3 7873 7000SWITZERLAND –Farnell InOneTel No:++ 41 1 204 64 64Fax No:++41 1 204 64 54DENMARK –Farnell InOneTel No:++ 45 44 53 66 44Fax No:++45 44 53 66 06–CPC–BuckHickman InOneNEW ZEALAND –Farnell InOneTel No:++ 64 9 357 0646Fax No:++64 9 357 0656 。

TC6291C (文件编号：S&CIC1159) 电流型DC-DC 升压器IC概述TC6291C 是一款电流模式升压型DC-DC 转换器。

其脉宽调制电路，内置0.2Ω功率场效应管使这个调节器具有高功率效率。

内部补偿网络也减少了多达6个的外部元件。

误差信号放大器的同相输入端连接到0.6V 精密基准电压，内部软启动功能可以减小瞬间突增电流。

TC6291C 可以封装为SOT23-6，在应用中节省了PCB 空间。

特点可调输出高达12V ；内部固定的脉宽调制频率：1.0MHZ 精准反馈参考电压：0.6V （±2%） 内置0.2Ω, 2A, 16V 的功率场效应管关断电流：0.1µA 过温保护功能可调过流保护：0.5A ~ 2.5A封装：SOT23-6应用充电器 LED 显示屏 数码相机 手持设备 便携式产品引脚示意图及说明TC6291C (文件编号：S&CIC1159) 电流型DC-DC 升压器IC功能框图21DCB0.3V0.6V短路比较器误差放大器UVLO关机电路软启动脉宽调制比较器振荡器斜率补偿OT P控制和驱动逻辑可调电流限制电流检测放大器Σ12345610KΩ - 100KΩ2.5A - 0.5A最大额定值参数 符号 测试条件最小值 典型值 最大值 单位 电源电压 Vcc 0 6 V LX 电压 Vlx 0 16 V EN 、FB 电压0 6 V 功耗 Pd SOT23-6@Ta=25℃455 m W 热阻 θJA SOT23-6+220 ℃/W 结温 Tj +150 ℃ 工作温度 Top -40 +85 ℃ 储存温度 Tst -65 +150 ℃ 管脚温度锡焊，10秒+260℃TC6291C(文件编号：S&CIC1159)电流型DC-DC升压器IC 典型工作特性（Vcc=3.3V，Vout=5V，Ta=25℃，除特殊说明外）效率VS输出电流电流限制VS外部电阻（Roc）工作频率VS输入电压工作频率VS温度参考电压VS输入电压参考电压VS输出电流TC6291C(文件编号：S&CIC1159)电流型DC-DC升压器IC 静态电流VS输入电压平均供电电流VS输入电压功能描述操作TC6291C是电流模式升压转换器。

T6290
标准差（整体)/(组内） 0.44/0.66 0.18/0.22 0.25/0.64 0.15/0.35 0.11/0.34 0.13/0.19 0.13/0.17 0.11/0.25 0.22/0.43 0.47/0.72 0.36/0.36 0.33/0.51 0.12/0.25 0.50/0.72 0.21/0.26
北京公司： 朝阳区中化地质大厦一层 研发中心
上海总部： 松江区新飞路1500号26栋 生产制造、质量控制
深圳公司： 南山区桃源街道田寮大厦1208 销售、技术支持、仓储、物流
产业经历
T6290申请10项发明专利保护
2014重组成立为准电子，推出T6290产线型综测 仪,并实现规模量产应用 2014年国家重大专项全模综测仪项目 2013年实现LTE/TD/W/GGE多模综测仪产线规模应用 2012年TDD/FDD-LTE综测仪平台发布, TDD/FDD LTE Advanced功能开发 2011年T6280多模信令综测仪发布 2010年LTE/WCDMA/GGE开发。 2009年综测仪在TD生产线规模应用（300台）
• 工厂采购在仪表高峰期从多家仪表租赁商租用仪表，不同厂家CMW500的版本，精
解决工厂租用仪表 的品质保障及一站 式获得解决方案
准度，软件盗版问题，仪表年度校准维护参差不齐，无法管理。 •各租赁厂商提供的测试配件品质堪忧 •T6290租赁仪表每半年原厂检查和校准一次，出库前使用高级源测试指标，保障仪表 的精准性，仪表品质，可用数量，技术支持能力，极大解决由于采购鱼目混杂的租赁 源头的仪表品质不确定和混乱，引发的生产可靠性保障问题
• 与德与振华工厂战略合作，4G项目全线采用T6290生产，在振华长期保持100台左右 的使用量，为魅族，中兴，宇龙，HTC项目做生产，客户反馈良好，得到各界高度 信任。 • ONTIM与中诺工厂ODM华为的项目全线采用T6290生产，中诺及其外协厂（光弘， 德邦）长期保持100台左右的使用量，性能稳定。生产的华为“畅享5”项目获中国 移动2015年千元智能机项目质量第一名。 • 华勤给华为的ODM项目在长城开发虎门新厂的项目自2015年底导入T6290以来，受 到客户的一致好评，目前T6290在该厂保持60台左右的使用量，并不断增加。 • 德赛4G产线指定使用T6290仪表，为TCL/ACTEL，天珑等生产，随着4G产品比重加大， 目前已经增加至30台以上。