MMBTRA221SS中文资料

Transistors1/4Power management (dual transistors)EMF21 / UMF21N2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package.z ApplicationPower management circuitz Features1) Power switching circuit in a single package.2) Mounting cost and area can be cut in half.z StructureSilicon epitaxial planar transistorz Equivalent circuitsz External dimensions (Units : mm)z Package, marking, and packaging specificationsType UMF21N UMT6F21TR 3000Package Marking CodeBasic ordering unit(pieces)EMF21EMT6F21T2R 8000Transistors2/4z Absolute maximum ratings (T a=25°C)Tr1Parameter∗1 Single pulse P W =1ms∗2 120mW per element must not be exceeded.Each terminal mounted on a recommended land.Symbol V CBO V CEO V EBO I C I CP P C Tj Tstg Limits −15−12−6−500150(TOTAL)150−55~+150−1.0∗1∗2Unit V V V mA A mW °C °CCollector-base voltage Collector-emitter voltage Emitter-base voltageCollector currentPower dissipationJunction temperatureRange of storage temperatureDTr2Parameter∗1 Characteristics of built-in transistor.∗2 Each terminal mounted on a recommended land.SymbolV CCV INI CI OP CTj Tstg Limits 50−10~+4010050150(TOTAL)150−55~+150∗1∗2UnitV V mA mA mW °C °CSupply voltage Input voltage Collector current Output current Power dissipation Junction temperatureRange of storage temperaturez Electrical characteristics (T a=25°C)Tr1ParameterSymbol Min.Typ.Max.Unit ConditionsV CB =−10V, I E =0mA, f =1MHzTransition frequencyf T −260−MHz V CE =−2V, I E =10mA, f =100MHz BV CEO −12−−V I C =−1mA Collector-emitter breakdown voltage BV CBO −15−−V I C =−10µA Collector-base breakdown voltage BV EBO −6−−V I E =−10µA Emitter-base breakdown voltage I CBO −−−100nA V CB =−15V Collector cut-off current I EBO −−−100nA V EB =−6VEmitter cut-off currentV CE(sat)−−100−250mV I C =−200mA, I B =−10mA Collector-emitter saturation voltage h FE 270−680−V CE =−2V, I C =−10mADC current gainCob−6.5−pFCollector output capacitanceDTr2ParameterSymbol V I(off)V I(on)V O(on)I I I O(off)R 1G I R 2/R 1f TMin.−3−−−7300.8−−−0.1−−10−12500.5−0.30.880.513−1.2−V V CC =5V, I O =100µA V O =0.3V, I O =10mA I O /I I =10mA/0.5mA V I =5VV CC =50V, V I =0V V O =5V, I O =5mAV CE =10V, I E =−5mA, f =100MHz∗V mA µA k Ω−−−−MHzTyp.Max.Unit ConditionsInput voltage Output voltage Input current Output current Input resistance DC current gain Resistance ratio Transition frequency∗ Transition frequency of the deviceTransistors3/4z Electrical characteristic curves Tr1BASE TO EMITTER VOLTAGE : V BE (V)Fig.1 Grounded emitter propagationcharacteristics C O L L E C T O R C U R R E N T : I C (m A )COLLECTOR CURRENT : I C (mA)Fig.2 DC current gain vs.collector currentD C C U R RE N T G A I N : hF ECOLLECTOR CURRENT : I C (mA)Fig.3 Collector-emitter saturation voltagevs. collector current ( Ι )C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (m V )COLLECTOR CURRENT : I C (mA)Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ )C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )COLLECTOR CURRENT : I C (mA)Fig.5 Base-emitter saturation voltage vs. collector currentB A S E R S A T U R A T I O N V O L T A G E : V B E (s a t ) (m V )EMITTER CURRENT : I E (mA)Fig.6 Gain bandwidth productvs. emitter current1T R A N S I T I O N F R E Q U E N C Y : f T (M H z )101000100C O L L E C T O R O U T P U T C A P A C I T A N C E : C o b (p F )E M I T T E R I N P U T C A P A C I T A N C E : C i b (pF )COLLECTOR TO BASE VOLTAGE : V CB (V)Fig.7 Collector output capacitancevs. collector-base voltage Emitter input capacitance vs. emitter-base voltageTransistors4/4DTr2I N P U T V O L T A G E : V I (o n ) (V )OUTPUT CURRENT : I O (A)Fig.1 Input voltage vs. output current(ON characteristics)INPUT VOLTAGE : V I(off) (V)O U T P U T C U R R E N T : I o (A )120050010020501025Fig.2 Output current vs. input voltage(OFF characteristics)OUTPUT CURRENT : I O (A)D C C U RR E N T G A I N : G IFig.3 DC current gain vs. outputcurrentOUTPUT CURRENT : I O (A)O U T P U T V O L T A G E: V O (o n ) (V )Fig.4 Output voltage vs. outputcurrentAppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.0分销商库存信息: ROHMUMF21NTR。

MMUN2111LT1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistors with Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23package which is designed for low power surface mount applications.Features•Simplifies Circuit Design •Reduces Board Space•Reduces Component Count•The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.•Available in 8 mm embossed tape and reel.•Pb−Free Packages are AvailableMAXIMUM RATINGS (T A = 25°C unless otherwise noted)RatingSymbol Value Unit Collector-Base Voltage V CBO 50Vdc Collector-Emitter Voltage V CEO 50Vdc Collector CurrentI C100mAdcTHERMAL CHARACTERISTICSCharacteristicSymbol Max Unit Total Device Dissipation T A = 25°CDerate above 25°CP D246 (Note 1)400 (Note 2)1.5 (Note 1)2.0 (Note 2)mW °C/W Thermal Resistance,Junction-to-Ambient R q JA 508 (Note 1)311 (Note 2)°C/W Thermal Resistance,Junction-to-Lead R q JL 174 (Note 1)208 (Note 2)°C/W Junction and Storage, Temperature RangeT J , T stg−55 to +150°CMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.FR−4 @ Minimum Pad 2.FR−4 @ 1.0 x 1.0 inch PadPreferred devices are recommended choices for future use and best overall value.PIN 3COLLECTOR (OUTPUT)PIN 2EMITTER (GROUND)PIN 1BASE DEVICE MARKING INFORMATIONSee specific marking information in the device marking table on page 2 of this data sheet.DEVICE MARKING AND RESISTOR VALUESDevice*Package Marking R1 (K)R2 (K)ShippingMMUN2111LT1, G MMUN2111LT3, G SOT−23A6A10103000/Tape & Reel10,000/Tape & ReelMMUN2112LT1, G SOT−23A6B22223000/Tape & ReelMMUN2113LT1, G MMUN2113LT3, G SOT−23A6C47473000/Tape & Reel10,000/Tape & ReelMMUN2114LT1, G SOT−23A6D10473000/Tape & Reel MMUN2115LT1, G (Note 3)SOT−23A6E10∞3000/Tape & Reel MMUN2116LT1, G (Note 3)SOT−23A6F 4.7∞3000/Tape & Reel MMUN2130LT1, G (Note 3)SOT−23A6G 1.0 1.03000/Tape & Reel MMUN2131LT1, G (Note 3)SOT−23A6H 2.2 2.23000/Tape & Reel MMUN2132LT1, G (Note 3)SOT−23A6J 4.7 4.73000/Tape & Reel MMUN2133LT1, G (Note 3)SOT−23A6K 4.7473000/Tape & Reel MMUN2134LT1, G (Note 3)SOT−23A6L22473000/Tape & Reel*The “G’’ suffix indicates Pb−Free package available.3.New devices. Updated curves to follow in subsequent data sheets.ELECTRICAL CHARACTERISTICS(T A = 25°C unless otherwise noted)Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICSCollector-Base Cutoff Current (V CB = 50 V, I E = 0)I CBO−−100nAdc Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0)I CEO−−500nAdcEmitter-Base Cutoff Current MMUN2111LT1 (V EB = 6.0 V, I C = 0)MMUN2112LT1MMUN2113LT1MMUN2114LT1MMUN2115LT1MMUN2116LT1MMUN2130LT1MMUN2131LT1MMUN2132LT1MMUN2133LT1MMUN2134LT1I EBO−−−−−−−−−−−−−−−−−−−−−−0.50.20.10.20.91.94.32.31.50.180.13mAdcCollector-Base Breakdown Voltage (I C = 10 m A, I E = 0)V(BR)CBO50−−Vdc Collector-Emitter Breakdown Voltage (Note 4)(I C = 2.0 mA, I B = 0)V(BR)CEO50−−Vdc 4.Pulse Test: Pulse Width < 300 m s, Duty Cycle < 2.0%ELECTRICAL CHARACTERISTICS(T A = 25°C unless otherwise noted) (Continued)Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 5)DC Current Gain MMUN2111LT1 (V CE = 10 V, I C = 5.0 mA)MMUN2112LT1MMUN2113LT1MMUN2114LT1MMUN2115LT1MMUN2116LT1MMUN2130LT1MMUN2131LT1MMUN2132LT1MMUN2133LT1MMUN2134LT1h FE356080801601603.08.0158080601001401402502505.01527140130−−−−−−−−−−−Collector-Emitter Saturation Voltage(I C = 10 mA, I E = 0.3 mA)(I C = 10 mA, I B = 5 mA) MMUN2130LT1/MMUN2131LT1(I C = 10 mA, I B = 1 mA) MMUN2115LT1/MMUN2116LT1/MMUN2132LT1/MMUN2133LT1/MMUN2134LT1V CE(sat)−−0.25VdcOutput Voltage (on)(V CC = 5.0 V, V B = 2.5 V, R L = 1.0 k W)MMUN2111LT1MMUN2112LT1MMUN2114LT1MMUN2115LT1MMUN2116LT1MMUN2130LT1MMUN2131LT1MMUN2132LT1MMUN2133LT1MMUN2134LT1 (V CC = 5.0 V, V B = 3.5 V, R L = 1.0 k W)MMUN2113LT1V OL−−−−−−−−−−−−−−−−−−−−−−0.20.20.20.20.20.20.20.20.20.20.2VdcOutput Voltage (off)(V CC = 5.0 V, V B = 0.5 V, R L = 1.0 k W)(V CC = 5.0 V, V B = 0.25 V, R L = 1.0 k W)MMUN2115LT1MMUN2116LT1MMUN2131LT1MMUN2132LT1(V CC = 5.0 V, V B = 0.050 V, R L = 1.0 k W)MMUN2130LT1V OH 4.9−−VdcInput Resistor MMUN2111LT1MMUN2112LT1MMUN2113LT1MMUN2114LT1MMUN2115LT1MMUN2116LT1MMUN2130LT1MMUN2131LT1MMUN2132LT1MMUN2133LT1MMUN2134LT1R17.015.432.97.07.03.30.71.53.33.315.410224710104.71.02.24.74.7221328.661.113136.11.32.96.16.128.6k WResistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1MMUN2114LT1MMUN2115LT1/MMUN2116LT1MMUN2130LT1/MMUN2131LT1/MMUN2132LT1MMUN2133LT1R1/R20.80.17−0.80.0551.00.21−1.00.11.20.25−1.20.1855.Pulse Test: Pulse Width < 300 m s, Duty Cycle < 2.0%TYPICAL ELECTRICAL CHARACTERISTICSMMUN2111LT1000V in , INPUT VOLTAGE (VOLTS)I C , C O L L E C T O R C U R R E N T (m A )0.01I C , COLLECTOR CURRENT (mA)V C E (s a t ), M A X I M U M C O L L E C T O R V O L T A G E (V O L T S )0.111000h F E , D C C U R R E N T G A I N (N O R M A L I Z E D )10010V R , REVERSE BIAS VOLTAGE (VOLTS)C o b , C A P A C I T A N C E (p F )I C , COLLECTOR CURRENT (mA)0.1V i n , I N P U T V O L T A G E (V O L T S )10100Figure 1. Derating Curve250200150100500T A , AMBIENT TEMPERATURE (°C)P D , P O W E R D I S S I P A T I O N (M I L L I W A T T S )Figure 2. V CE(sat) versus I CFigure 4. Output CapacitanceFigure 5. Output Current versus Input VoltageFigure 6. Input Voltage versus Output CurrentTYPICAL ELECTRICAL CHARACTERISTICSMMUN2112LT1Figure 7. V CE(sat) versus I CFigure 8. DC Current Gain1000I C , COLLECTOR CURRENT (mA)h F E , D C C U R R E N T G A I N (N O R M A L I Z E D )10010Figure 9. Output Capacitance I C , COLLECTOR CURRENT (mA)V i n , I N P U T V O L T A G E (V O L T S )1001010.1Figure 10. Output Current versus Input Voltage1001010.10.010.001V in , INPUT VOLTAGE (VOLTS)I C , C O L L E C T O R C U R R E N T (m A )Figure 11. Input Voltage versus Output Current0.01V C E (s a t ), M A X I M U M C O L L E C T O R V O L T A G E (V O L T S )0I C , COLLECTOR CURRENT (mA)432V R , REVERSE BIAS VOLTAGE (VOLTS)C o b , C A P A C I T A N C E (p F )TYPICAL ELECTRICAL CHARACTERISTICSMMUN2113LT11001010.1I C , COLLECTOR CURRENT (mA)V i n , I N P U T V O L T A G E (V O L T S )Figure 14. Output Capacitance V in , INPUT VOLTAGE (VOLTS)Figure 15. Output Current versus Input VoltageFigure 16. Input Voltage versus Output Current10.10.01V C E (s a t ), M A X I M U M C O L L E C T O R V O L T A G E (V O L T S )0.80.60.2V R , REVERSE BIAS VOLTAGE (VOLTS)C o b , C A P A C I T A N C E (p F )TYPICAL ELECTRICAL CHARACTERISTICSMMUN2114LT1V in , INPUT VOLTAGE (VOLTS)1010.14.543.532.521.510.50V R , REVERSE BIAS VOLTAGE (VOLTS)V i n , I N P U T V O L T A G E (V O L T S )V C E (s a t ), M A X I M U M C O L L E C T O R V O L T A G E (V O L T S )Figure 19. Output Capacitance Figure 20. Output Current versus Input VoltageC o b , C A P A C I T A N C E (p F )Figure 21. Input Voltage versus Output Current I C , COLLECTOR CURRENT (mA)Figure 22. Inexpensive, Unregulated Current SourcePACKAGE DIMENSIONSSOT−23TO−236AB CASE 318−08ISSUE AMSTYLE 6:PIN 1.BASE2.EMITTER3.COLLECTORǒmm inchesǓSCALE 10:1*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.318−01 THRU −07 AND −09 OBSOLETE,NEW STANDARD 318−08.VIEW CDIM A MIN NOM MAX MIN MILLIMETERS0.89 1.00 1.110.035INCHES A10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L1 2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.029ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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