2SC3940A资料

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1Transistors

Publication date: March 2003SJC00150BED2SC3940, 2SC3940A

Silicon NPN epitaxial planar type

For low-frequency output amplification and driver amplification

Complementary to 2SA1534, 2SA1534A

■Features

•Low collector-emitter saturation voltage VCE(sat)•Allowing supply with the radial taping

■Absolute Maximum Ratings Ta = 25°CUnit: mm

ParameterSymbolConditionsMinTypMaxUnit

Collector-base voltage2SC3940VCBOIC = 10 µA, IE = 030V

(Emitter open)2SC3940A60

Collector-emitter voltage2SC3940VCEOIC = 2 mA, IB =

025V

(Base open)2SC3940A50

Emitter-base voltage (Collector open)VEBOIE = 10 µA, IC =

05V

Collector-base cutoff current (Emitter open)ICBOVCB = 20 V, IE = 00.1µA

Forward current transfer ratio *1hFE1 *2VCE = 10 V, IC = 500 mA85340

hFE2VCE = 5 V, IC = 1 A50

Collector-emitter saturation voltage*1VCE(sat)IC = 500 mA, IB = 50 mA0.20.4V

Base-emitter saturation voltage*1VBE(sat)IC = 500 mA, IB = 50 mA0.851.20V

Transition frequencyfTVCB = 10 V, IE = −50 mA, f = 200 MHz200MHz

Collector output capacitanceCobVCB = 10 V, IE = 0, f = 1 MHz1120pF

(Common base, input open circuited)ParameterSymbolRatingUnit

Collector-base voltage2SC3940VCBO30V

(Emitter open)2SC3940A60

Collector-emitter voltage2SC3940VCEO25V

(Base open)2SC3940A50

Emitter-base voltage (Collector open)VEBO5V

Collector currentIC1A

Peak collector currentICP1.5A

Collector power dissipationPC1W

Junction temperatureTj150°C

Storage temperatureTstg−55 to +150°C

■Electrical Characteristics Ta = 25°C ± 3°C

Note)1.Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*1: Pulse measurement

*2:Rank classification

RankQRS

hFE185 to 170120 to 240170 to 3401: Emitter2: Collector3: BaseTO-92NL-A1 Package2.3±0.25.0±0.2

0.7±0.14.0±0.2

8.0±0.2

0.7±0.2

13.5±0.5

2.54±0.15(1.27)(1.27)0.45+0.2–0.10.45+0.15–0.1

132Directive (EU 2002/95/EC).2SC3940, 2SC3940A

2

SJC00150BED

PC  TaIC  VCEIC  IB

VCE(sat)  ICVBE(sat)  IChFE  IC

fT  IECob  VCBVCER  RBE0160401208001.2

1.0

0.8

0.6

0.4

0.2Collector power dissipation PC (W)

Ambient temperature Ta (°C)010826401.5

1.25

1.0

0.75

0.5

0.25IB = 10 mA9 mA8 mA7 mA

6 mA5 mA

4 mA

3 mA

2 mA

1 mATa = 25°C

Collector current IC (A)

Collector-emitter voltage VCE (V)01210826401.2

1.0

0.8

0.6

0.4

0.2VCE = 10 VTa = 25°C

Base current IB (mA)Collector current IC (A)

0.010.11100.0010.010.1110IC / IB = 10

Ta = 75°C

25°C

−25°C

Collector-emitter saturation voltage VCE(sat) (V)

Collector current IC (A)0.010.11100.010.1110100IC / IB = 10

Ta = −25°C25°C

75°C

Base-emitter saturation voltage VBE(sat) (V)

Collector current IC (A)0.010.11100600

500

400

300

200

100VCE = 10 V

Ta = 75°C

25°C

−25°CForward current transfer ratio hFE

Collector current IC (A)

−1−10−1000200

160

120

80

40VCB = 10 VTa = 25°C

Transition frequency fT (MHz)

Emitter current IE (mA)110100050

40

30

20

10IE = 0f = 1 MHzTa = 25°C

Collector-base voltage VCB (V)Collector output capacitance

(Common base, input open circuited) Cob (pF)

0.1110100Collector-emitter voltage

(Resistor between B and E) VCER (V)

0120

100

80

60

40

20IC = 10 mATa = 25°C

2SC3940A

2SC3940

Base-emitter resistance RBE (kΩ)Directive (EU 2002/95/EC).2SC3940, 2SC3940A

3

SJC00150BED

ICEO  TaSafe operation area

01604012080110102103104VCE = 10 V

Ambient temperature Ta (°C)ICEO (Ta)

ICEO (Ta = 25°C)

0.11101000.0010.010.1110Single pulseTa = 25°C

t = 10 ms

2SC3940A

2SC3940t = 1 sICP

IC

Collector current IC (A)

Collector-emitter voltage VCE (V)Directive (EU 2002/95/EC).

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