2SC3940A资料
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1Transistors
Publication date: March 2003SJC00150BED2SC3940, 2SC3940A
Silicon NPN epitaxial planar type
For low-frequency output amplification and driver amplification
Complementary to 2SA1534, 2SA1534A
■Features
•Low collector-emitter saturation voltage VCE(sat)•Allowing supply with the radial taping
■Absolute Maximum Ratings Ta = 25°CUnit: mm
ParameterSymbolConditionsMinTypMaxUnit
Collector-base voltage2SC3940VCBOIC = 10 µA, IE = 030V
(Emitter open)2SC3940A60
Collector-emitter voltage2SC3940VCEOIC = 2 mA, IB =
025V
(Base open)2SC3940A50
Emitter-base voltage (Collector open)VEBOIE = 10 µA, IC =
05V
Collector-base cutoff current (Emitter open)ICBOVCB = 20 V, IE = 00.1µA
Forward current transfer ratio *1hFE1 *2VCE = 10 V, IC = 500 mA85340
hFE2VCE = 5 V, IC = 1 A50
Collector-emitter saturation voltage*1VCE(sat)IC = 500 mA, IB = 50 mA0.20.4V
Base-emitter saturation voltage*1VBE(sat)IC = 500 mA, IB = 50 mA0.851.20V
Transition frequencyfTVCB = 10 V, IE = −50 mA, f = 200 MHz200MHz
Collector output capacitanceCobVCB = 10 V, IE = 0, f = 1 MHz1120pF
(Common base, input open circuited)ParameterSymbolRatingUnit
Collector-base voltage2SC3940VCBO30V
(Emitter open)2SC3940A60
Collector-emitter voltage2SC3940VCEO25V
(Base open)2SC3940A50
Emitter-base voltage (Collector open)VEBO5V
Collector currentIC1A
Peak collector currentICP1.5A
Collector power dissipationPC1W
Junction temperatureTj150°C
Storage temperatureTstg−55 to +150°C
■Electrical Characteristics Ta = 25°C ± 3°C
Note)1.Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2:Rank classification
RankQRS
hFE185 to 170120 to 240170 to 3401: Emitter2: Collector3: BaseTO-92NL-A1 Package2.3±0.25.0±0.2
0.7±0.14.0±0.2
8.0±0.2
0.7±0.2
13.5±0.5
2.54±0.15(1.27)(1.27)0.45+0.2–0.10.45+0.15–0.1
132Directive (EU 2002/95/EC).2SC3940, 2SC3940A
2
SJC00150BED
PC TaIC VCEIC IB
VCE(sat) ICVBE(sat) IChFE IC
fT IECob VCBVCER RBE0160401208001.2
1.0
0.8
0.6
0.4
0.2Collector power dissipation PC (W)
Ambient temperature Ta (°C)010826401.5
1.25
1.0
0.75
0.5
0.25IB = 10 mA9 mA8 mA7 mA
6 mA5 mA
4 mA
3 mA
2 mA
1 mATa = 25°C
Collector current IC (A)
Collector-emitter voltage VCE (V)01210826401.2
1.0
0.8
0.6
0.4
0.2VCE = 10 VTa = 25°C
Base current IB (mA)Collector current IC (A)
0.010.11100.0010.010.1110IC / IB = 10
Ta = 75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (A)0.010.11100.010.1110100IC / IB = 10
Ta = −25°C25°C
75°C
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC (A)0.010.11100600
500
400
300
200
100VCE = 10 V
Ta = 75°C
25°C
−25°CForward current transfer ratio hFE
Collector current IC (A)
−1−10−1000200
160
120
80
40VCB = 10 VTa = 25°C
Transition frequency fT (MHz)
Emitter current IE (mA)110100050
40
30
20
10IE = 0f = 1 MHzTa = 25°C
Collector-base voltage VCB (V)Collector output capacitance
(Common base, input open circuited) Cob (pF)
0.1110100Collector-emitter voltage
(Resistor between B and E) VCER (V)
0120
100
80
60
40
20IC = 10 mATa = 25°C
2SC3940A
2SC3940
Base-emitter resistance RBE (kΩ)Directive (EU 2002/95/EC).2SC3940, 2SC3940A
3
SJC00150BED
ICEO TaSafe operation area
01604012080110102103104VCE = 10 V
Ambient temperature Ta (°C)ICEO (Ta)
ICEO (Ta = 25°C)
0.11101000.0010.010.1110Single pulseTa = 25°C
t = 10 ms
2SC3940A
2SC3940t = 1 sICP
IC
Collector current IC (A)
Collector-emitter voltage VCE (V)Directive (EU 2002/95/EC).
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