SKIIP13AC126V1中文资料

© by SEMIKRON 0898B 16 – 31Absolute Maximum RatingsSymbol Conditions 1)Values Units Inverter V CES V GES I C I CMI F = –I C I FM = –I CMT heatsink = 25 / 80 °Ct p < 1 ms; T heatsink = 25 / 80 °C T heatsink = 25 / 80 °Ct p < 1 ms; T heatsink = 25 / 80 °C600± 2050 / 35100 / 7057 / 38114 / 76V V A A A A Bridge Rectifier V RRM I D I FSMI 2t T heatsink = 80 °Ct p = 10 ms; sin. 180 °, T j = 25 °C t p = 10 ms; sin. 180 °, T j = 25 °C 80025370680V A A A 2s T j T stg V isol AC, 1 min.– 40 . . . + 150– 40 . . . + 1252500°C °C VSKiiP 31 NAB 06MiniSKiiP 3SEMIKRON integrated intelligent Power SKiiP 31 NAB 063-phase bridge rectifier +braking chopper +3-phase bridge inverterCase M3UL recognized file no. E63532•specification of temperature sensor see part A•common characteristics see page B16–3Options•also available with faster IGBTs (type ... 063), data sheet on request1)T heatsink = 25 °C, unless otherwise specified2)CAL = Controlled Axial Lifetime Technology (soft and fast recovery)* For diagrams of the Chopper IGBT please refer to SKiiP 22 NAB 06B 16 – 320698© by SEMIKRONFig. 3Turn-on /-off energy = f (I C )Fig. 4Turn-on /-off energy = f (R G )T j = 125 °C V CE = 300 V V GE = ± 15 V I C = 50 AT j = 125 °C V CE = 300 V V GE = ± 15 V R G = 22 ΩI Cpuls = 50 AV GE = 0 V f = 1 MHzFig. 1Typ. output characteristic, t p = 80 µs; 25 °CFig. 2Typ. output characteristic, t p = 80 µs; 125 °CFig. 5Typ. gate charge characteristic Fig. 6Typ. capacitances vs. V CE© by SEMIKRON0698B 16 – 3Fig. 9Turn-off safe operating area (RBSOA) of the IGBT Fig. 10Safe operating area at short circuit of the IGBTT j= ≤ 150 °C V GE = ± 15 V t sc = ≤ 10 µs L ext < 25 nHT j = ≤ 150 °C V GE = ± 15 VFig. 7Rated current of the IGBT I Cop / I C = f (T h )T j = 150 °C V GE = ≥ 15 V00.20.40.60.81.01.2255075100125150I Cop /I C Mini0607T h [°C]Fig. 11Typ. freewheeling diode forward characteristic Fig. 12Forward characteristic of the input bridge diode mon characteristics of MiniSKiiPMiniSKiiP 600 VMiniSKiiP 3SKiiP 30 NAB 06 SKiiP 31 NAB 06 SKiiP 32 NAB 06 SKiiP 30 NAB 12 SKiiP 31 NAB 12 SKiiP 32 NAB 12CircuitCase M3Layout and connections for thecustomer’s printed circuit board。

Absolute Maximum RatingsSymbol Conditions 1)Values Units V CES V GES I C I CM T j T stg V isolT heatsink = 25 / 80 °Ct p < 1 ms; T heatsink = 25 / 80 °C AC, 1 min.1200± 20125 / 85250 / 170– 40 . . . + 150– 40 . . . + 1252500V V A A °C °C V Inverse Diode I F = –I C I FM = –I CM I FSMI 2tT heatsink = 25 / 80 °Ct p < 1 ms; T heatsink = 25 / 80 °Ct p = 10 ms; sin., T j = 25 °C t p = 10 ms; sin., T j = 25 °C 80 / 53160 / 1067202600A A A A 2sCharacteristicsSymbol Conditions 1)min.typ.max.UnitsIGBT - InverterV CEsatt d(on)t rt d(off)t fE on + E off C ies R thjhI C = 100 A T j = 25 (125) °C V CC = 600 V; V GE = ± 15 V I C = 100 A; T j = 125 °C R gon = R goff = 11 Ωinductive load V CE = 25 V; V GE = 0 V, 1 MHzper IGBT ––––––––2,5(3,1)505540070276,6–3,0(3,7)100110600100––0,25V ns ns ns ns mJ nF K/W Diode 2) - InverterV F = V EC V TOr TI RRMQ rrE offR thjhI F = 75 A T j = 25 (125) °CT j = 125 °C T j = 125 °C I F = 75 A, V R = – 600 V di F /dt = – 800 A/µs V GE = 0 V, T j = 125 °C per diode –––––––2,0(1,8)1,01145113,0–2,5(2.3)1,215–––0,8V V m ΩA µC mJ K/W Current sensor for three phase output ac current (SKiiP 83 AC 12 I)I p RMS I pmax RMSI p peakR outI s RMSI p : I s Offset error Linearitydelay time BandwidthContinuous current,T = 100 °C, V suppl = ± 15 Vt ≤ 2 s t ≤ 10 µs terminating resistance rated sensor current at I p = 50 A RMStransfer ratioI P = 0 A, T = – 40 ... 100 °CI P =10 % – 80 %90 % – 20 %––––––––50–100050251 : 2000± 0,20,1< 1< 10 – 100–80––––––(– 3dB)A A A ΩmA mA %µs µs kHz Temperature SensorR TS T = 25 / 100 °C1000 / 1670ΩMechanical DataM 1Case case to heatsink, SI Units mechanical outline see pagesB 16 – 11 and B 16 – 122,5–M83,5NmSKiiP 83 AC 12 - SKiiP 83 AC 12 I MiniSKiiP 8SEMIKRON integrated intelligent Power SKiiP 83 AC 12SKiiP 83 AC 12 I 3)SKiiP 83 AC 12 IS 4)IGBT3-phase bridge inverterCase M8UL recognized file no. E63532•more detailed characteristics ofcurrent sensors and temperature sensor please refer to part A •common characteristics see page B 16 – 4Options•also available with powerful free-wheeling diodes. Data sheet on request1)T heatsink = 25 °C, unless otherwise specified2)CAL = Controlled Axial Lifetime Technology (soft and fast recovery)3)With integrated closed loop current sensors4)Extended current range, data sheet on request~~~0408012016002001234517V13V15V 11V 9V7VI C [A]V CE [V]83AC120104080120160200123459V7V13V15V 17V11V I C [A]83AC1202V CE [V]02468101214161820600V800VV GE [V]83AC1205Q G [nC]200400600800Fig. 3Turn-on /-off energy = f (I C )Fig. 4Turn-on /-off energy = f (R G )I Cpuls = 100 AV GE = 0 V f = 1 MHzFig. 1Typ. output characteristic, t p = 80 µs; 25 °C Fig. 2Typ. output characteristic, t p = 80 µs; 125 °CFig. 5Typ. gate charge characteristic Fig. 6Typ. capacitances vs. V CE T j = 125 °C V CE = 600 V V GE = ± 15 V I C = 100 AT j = 125 °C V CE = 600 V V GE = ± 15 V R G = 11 ΩT j = ≤ 150 °C V GE = ± 15 V t sc = ≤ 10 µs L ext < 25 nHT j = ≤ 150 °C V GE = ± 15 VT j = 150 °C V GE = ≥ 15 VFig. 9Turn-off safe operating area (RBSOA) of the IGBT Fig. 10Safe operating area at short circuit of the IGBTFig. 7Rated current of the IGBT I Cop / I C = f (T h)00.20.40.60.81.01.2255075100125150I Cop /I C Mini1207T h [°C]00,511,522,550010001500I Cpuls /I C Mini1209V CE [V]02468101250010001500Note:*Allowed nu mbers of short ci r cuit:<1000*Time between short circuit:>1sI Csc /I CN Mini1210V CE [V]Fig. 11Typ. freewheeling diode forward characteristic Fig. 12Forward characteristic of the input bridge diode MiniSKiiP 1200 VMiniSKiiP 8Inverter part SKiiP 82 AC 06 ...SKiiP 83 AC 06 ...SKiiP 81 AC 12 ...SKiiP 82 AC 12 ...SKiiP 83 AC 12 ...Circuit Case M8Note:The current sensors areavailable only by option IMiniSKiiP 8 Inverter partSKiiP 82 AC 06 ... SKiiP 83 AC 06 ... SKiiP 81 AC 12 ... SKiiP 82 AC 12 ... SKiiP 83 AC 12 ...Case M8Layout and connections for thecustomer’s printed circuit boardpin connection optional1T+2T-3~1ET1CB14GB15GT16–EB1EB2EB37+CT1CT2CT38GB29GT210~2ET2CB211+CT1CT2CT312–EB1EB2EB313GT314~3ET3CB315GB316K1 for ~1X17K2 for ~1X18S1 for ~1X19S2 for ~1X20K1 for ~2X21K2 for ~2X22S1 for ~2X23S2 for ~2X24K1 for ~3X25K2 for ~3X26S1 for ~3X27S2 for ~3X。

© by SEMIKRON 000131 B 16 – 53Absolute Maximum RatingsSymbolConditions 1)Values Units Inverter & Chopper V CES V GES I C I CMI F = –I CI FM = –I CM T heatsink = 25 / 80 °Ct p < 1 ms; T heatsink = 25 / 80 °C T heatsink = 25 / 80 °C t p < 1 ms; T heatsink = 25 / 80 °C 1200± 2023 / 1546 / 3024 / 1748 / 34V V A A A A Bridge Rectifier V RRMI DI FSM I 2t T heatsink = 80 °C t p = 10 ms; sin. 180 °, T j = 25 °C t p = 10 ms; sin. 180 °, T j = 25 °C 1500257002400V A A A 2s T j T stg V isol AC, 1 min.– 40 . . . + 150– 40 . . . + 1252500°C °C VSKiiP 22 NAB 12 - SKiiP 22 NAB 12 I MiniSKiiP 2SEMIKRON integrated intelligent Power SKiiP 22 NAB 12SKiiP 22 NAB 12 I 3)3-phase bridge rectifier + braking chopper +3-phase bridge inverterCase M2UL recognized file no. E63532•specification of shunts and temperature sensor see part A •common characteristics see page B 16 – 41)T heatsink = 25 °C, unless otherwise specified2)CAL = Controlled Axial Lifetime Technology (soft and fast recovery)3)With integrated DC and/or AC shunts4)accuracy of pure shunt, please note that for DC shunt no separate sensing contact is used.B 16 – 54000131© by SEMIKRON= 600 V = ± 15 V = 600 V = ± 15 V = 52 ΩI Cpuls = 15 AV GE = 0 V f = 1 MHzFig. 1Typ. output characteristic, t p = 80 µs; 25 °C Fig. 2Typ. output characteristic, t p = 80 µs; 125 °CFig. 5Typ. gate charge characteristic Fig. 6Typ. capacitances vs. V CEB 16 – 40698© by SEMIKRONT j = ≤ 150 °C V GE = ± 15 V t sc = ≤ 10 µs L ext < 25 nHT j = ≤ 150 °C V GE = ± 15 VT j = 150 °C V GE = ≥ 15 VFig. 9Turn-off safe operating area (RBSOA) of the IGBT Fig. 10Safe operating area at short circuit of the IGBTFig. 7Rated current of the IGBT I Cop / I C = f (T h)00.20.40.60.81.01.2255075100125150I Cop /I C Mini1207T h [°C]00,511,522,550010001500I Cpuls /I C Mini1209V CE [V]02468101250010001500Note:*Allowed nu mbers of short ci r cuit:<1000*Time between short circuit:>1sI Csc /I CN Mini1210V CE [V]Fig. 11Typ. freewheeling diode forward characteristic Fig. 12Forward characteristic of the input bridge diode MiniSKiiP 1200 VMiniSKiiP 2SKiiP 20 NAB 06 ... SKiiP 21 NAB 06 ... SKiiP 20 NAB 12 ... SKiiP 22 NAB 12 ...CircuitCase M2Layout and connections for thecustomer’s printed circuit boardNote:The shunts are availableonly by option I-DC/AIsw0wIsv0v0uIsuI+B-TL3L1L2+rect-DC-rectg1UVW+T+DCg3g5g2g6g4gB+B-BHauptanschlußpower connectorcontrol pinSteueranschluß。

000131Absolute Maximum RatingsSymbol Conditions 1)ValuesUnitsInverter (Chopper see SKiiP 22 NAB 12)V CES V GES I C I CMI F = –I C I FM = –I CMT heatsink = 25 / 80 °Ct p < 1 ms; T heatsink = 25 / 80 °C T heatsink = 25 / 80 °Ct p < 1 ms; T heatsink = 25 / 80 °C1200± 2016 / 1132 / 2216 / 1132 / 22V V A A A A Bridge Rectifier V RRMI DI FSM I 2tT heatsink = 80 °C t p = 10 ms; sin. 180 °, T j = 25 °C t p = 10 ms; sin. 180 °, T j = 25 °C 150025370680V A A A 2s T j T stg V isol AC, 1 min.– 40 . . . + 150– 40 . . . + 1252500°C °C VSKiiP 20 NAB 12 - SKiiP 20 NAB 12 I MiniSKiiP 2SEMIKRON integrated intelligent Power SKiiP 20 NAB 12SKiiP 20 NAB 12 I 3)3-phase bridge rectifier +braking chopper +3-phase bridge inverterCase M2UL recognized file no. E63532•specification of shunts andtemperature sensor see part A •common characteristics see page B 16 – 41)T heatsink = 25 °C, unless otherwise specified2)CAL = Controlled Axial Lifetime Technology (soft and fast recovery)3)With integrated DC and/or AC shunts4) accuracy of pure shunt, please note that for DC shunt no separate sensing contact is used.R cs(dc)R cs(ac)5 % 4)1 %16,5 m Ω10 m Ω000131Fig. 3Turn-on /-off energy = f (I C )Fig. 4Turn-on /-off energy = f (R G )T j = 125 °C V CE = 600 V V GE = ± 15 V I C = 10 AT j = 125 °C V CE = 600 V V GE = ± 15 V R G = 150 ΩI Cpuls = 10 AV GE = 0 V f = 1 MHzFig. 1Typ. output characteristic, t p = 80 µs; 25 °CFig. 2Typ. output characteristic, t p = 80 µs; 125 °CFig. 5Typ. gate charge characteristic Fig. 6Typ. capacitances vs. V CE0698T j = ≤ 150 °C V GE = ± 15 V t sc = ≤ 10 µs L ext < 25 nHT j = ≤ 150 °C V GE = ± 15 VT j = 150 °C V GE = ≥ 15 VFig. 9Turn-off safe operating area (RBSOA) of the IGBT Fig. 10Safe operating area at short circuit of the IGBTFig. 7Rated current of the IGBT I Cop / I C = f (T h)00.20.40.60.81.01.2255075100125150I Cop /I C Mini1207T h [°C]00,511,522,550010001500I Cpuls /I C Mini1209V CE [V]02468101250010001500Note:*Allowed nu mbers of short ci r cuit:<1000*Time between short circuit:>1sI Csc /I CN Mini1210V CE [V]Fig. 11Typ. freewheeling diode forward characteristic Fig. 12Forward characteristic of the input bridge diode MiniSKiiP 1200 VMiniSKiiP 2SKiiP 20 NAB 06 ... SKiiP 21 NAB 06 ... SKiiP 20 NAB 12 ... SKiiP 22 NAB 12 ...CircuitCase M2Layout and connections for thecustomer’s printed circuit boardNote:The shunts are availableonly by option I-DC/AIsw0wIsv0v0uIsuI+B-TL3L1L2+rect-DC-rectg1UVW+T+DCg3g5g2g6g4gB+B-BHauptanschlußpower connectorcontrol pinSteueranschluß。