SIHLD110中文资料
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Power MOSFETIRLD110, SiHLD110Vishay SiliconixFEATURES•Dynamic dV/dt Rating •Repetitive Avalanche Rated •For Automatic Insertion •End Stackable •Logic-Level Gate Drive•R DS(on) Specified at V GS = 4 V and 5 V •175 °C Operating Temperature •Lead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 25 V, starting T J = 25 °C, L = 183 mH, R G = 25 Ω, I AS = 2.0 A (see fig. 12).c.I SD ≤ 5.6 A, dI/dt ≤ 75 A/µs, V DD ≤ V DS , T J ≤ 175 °C.d. 1.6 mm from case.PRODUCT SUMMARYV DS (V)100R DS(on) (Ω)V GS = 5.0 V0.54Q g (Max.) (nC) 6.1Q gs (nC) 2.6Q gd (nC) 3.3ConfigurationSingleORDERING INFORMATIONPackage HEXDIPLead (Pb)-free IRLD110PbF SiHLD110-E3SnPbIRLD110SiHLD110ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS100VGate-Source Voltage V GS ± 10Continuous Drain Current V GS at 5.0 VT C = 25 °C I D1.0A T C = 100 °C0.70Pulsed Drain Current a I DM 8.0Linear Derating Factor0.0083W/°C Single Pulse Avalanche Energy b E AS 490mJ Avalanche current aI AR 1.0 A Repetitive Avalanche Energy a E AR 0.13mJ Maximum Power Dissipation T C = 25 °CP D 1.3WPeak Diode Recovery dV/dt cdV/dt 5.5V/ns Operating Junction and Storage Temperature Range T J , T stg- 55 to + 175°C Soldering Recommendations (Peak Temperature)for 10 s300d* Pb containing terminations are not RoHS compliant, exemptions may applyIRLD110, SiHLD110Vishay SiliconixNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSARAMETER SYMBOL TY.MAX.UNIT Maximum Junction-to-AmbientR thJA-120°C/WIRLD110, SiHLD110Vishay SiliconixCIRLD110, SiHLD110 Vishay SiliconixFig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating AreaIRLD110, SiHLD110Vishay SiliconixFig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRLD110, SiHLD110Vishay SiliconixFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test CircuitIRLD110, SiHLD110Vishay Siliconix Array Fig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several q ualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see /ppg?91309.Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。
