SII100N12中文资料
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T yp. c apac itanc es
C = f (V C E )
parameter: V G E = 0 V , f = 1 MHz
10 2
C
10 1
C is s
C os s C rs s
5
10
15
20
25
30
QGate
V VCE
40
R evers e bias ed s afe operating area I C puls = f(V C E ) , T j = 150°C parameter: V G E = 15 V
60 mWs 50
T yp. s witc hing los s es E = f (R G ) , inductive load , T j = 125°C par.: V C E = 600V , V G E = ± 15 V , I C = 100 A
40
E on E
mWs
E on
E
45 40
150 A 130 IC 120 110 100 90 80 70 60 50 40 30 20 10 0 0
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 0
IGBT
K/W ZthJC
10 -1
10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 0.05 0.02 0.01
NPT IGBT Modules
Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C
750 W 650 Ptot 600 550
100 µs
Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
K/W
_ < 0.36
Sirectifier
R
SII100N12
NPT IGBT Modules
Electeical Characteristics
Symbol Conditions Static Characteristics VGE(th) VGE = VCE, IC =4mA ICES VGE = 0; VCE = 1200V; Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =100A; VGE = 15V; Tj = 25(125)oC; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres gfs VCE=20V, IC=100A Switching Characteristics td(on) VCC = 600V, IC = 100A tr RGon = RGoff =6.8 , Tj = 125oC td(off) VGE = ± 15V tf FWD under following conditions: VF IF = 100A, VGE = 0V, Tj = 25(125)oC trr IF=100A, VR= _600V,VGE=0V,di/dt=_ 1000A/us,Tj = 125oC _ IF = 100A, VGE = 0V, VR= 600V Qrr _1000A/us, Tj = 25(125)oC di/dt= Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 1.5(6) 2.5(3.1) 6.5 1 0.5
SII100N12
NPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
Absolute Maximum Ratings Symbol VCES IC ICRM VGES
Ptot TVj,(Tstg) Visol RthJC RthJCD
o
TC = 25oC, unless otherwise specified Conditions
20
40
60
80
100
120
°C
160
10 -4 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
TC
tp
Sirectifier
R
SII100N12
NPT IGBT Modules
T yp. output c harac teris tic s I C = f (V C E ) parameter: tp = 80 µs , T j = 25 °C
0.5 2
0.0 0
200
400
600
800
1000 1200
V 1600 VC E
0 0
200
400
600
800 1000 1200
V 1600 VC E
Sirectifier
R
SII100N12
NPT IGBT Modules
T yp. s witc hing time I = f (IC ) , inductive load , T j = 125°C par.: V C E = 600 V , V G E = ± 15 V , R G = 6.8 Ω
40 20 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -4 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
VF
tp
Sirectifier
R
30
25 35 30 25 15 20 15 10 5 5 0 0 50 100 150 A 250 0 0 10 20 30 40 20
E off
E off
10
IC
Ω
60
RG
Sirectifier
R
SII100N12
NPT IGBT Modules
F orward c harac teris tic s of fas t rec overy revers e diode IF = f(V F ) parameter: T j
10 3
T yp. s witc hing time t = f (R G ) , inductive load , T j = 125°C par.: V C E = 600 V , V G E = ± 15 V , I C = 100 A
10 4
ns
t
tdoff
ns
t
10 3
tdoff
tdon tr
200 A
T yp. output c harac teris tic s I C = f (V C E ) parameter: tp = 80 µs , T j = 125 °C
200 A
IC
160 140 120 100 80 60 40 20 0 0
17V 15V 13V 11V 9V 7V
10 2
tf
10 2
tdon tr
tf
10 1 0
50
100
150
A
250
10 1 0
10
20
30
40
IC
Ω
60
RG
T yp. s witc hing los s es E = f (IC ) , inductive load , T j = 125°C par.: V C E = 600 V , V G E = ± 15 V , R G = 6.8 Ω
200 A
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 0
Diode
K/W ZthJC
IF
160 140 120
10 -1
T j=125°C
100 80 60
T j=25°C
10 -2 D = 0.50 0.20 0.10 10 -3 0.05 single pulse 0.02 0.01
Values 1200 145(100) 290(200) _ +20 700 _ 40...+125(150) 2500 _ 0.18 <
o
Units V A A V
W C
TC= 25(80) C TC= 25(80)oC, tP =1ms
_ TOPERATION < Tstg AC, 1min
V
200 A
IC
160 140 120 100 80 60 40 20 0 0
2
4
6
8
10
V 14 VGE
Sirectifier
R
SII100N12
NPT IGBT Modules
Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 100 A
20 V nF VGE 16 14 12 10 8 10 0 6 4 2 0 0 100 200 300 400 500 nC 700 10 -1 0 600 V 800 V
IC
160 140 120 100 80 60 40 20 0
17V 15V 13V 11V 9V 7V
