IRFDC20PBF中文资料

Max. Units
Conditions
––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 5mAd 3.0 mΩ VGS = 10V, ID = 75A g
4.0 V VDS = VGS, ID = 150μA
20 μA VDS =60V, VGS = 0V
––– 83 –––
Ciss
Input Capacitance
––– 6540 –––
Coss
Output Capacitance
––– 720 –––
Crss
Reverse Transfer Capacitance
––– 360 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1040 –––
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current d Maximum Power Dissipation
250
VDS = 48V, VGS = 0V, TJ = 125°C
100 nA VGS = 20V
-100 –––
VGS = -20V Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol

107/10/09IRF8707GPbFHEXFET ®Notes through are on page 9BenefitslVery Low Gate Chargel Very Low R DS(on) at 4.5V V GS l Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltage and Currentl 20V V GS Max. Gate Rating l 100% tested for Rg l Lead-Free l Halogen-FreeApplicationsl Control MOSFET of Sync-BuckConverters used for Notebook Processor Powerl Control MOSFET for IsolatedDC-DC Converters in Networking SystemsSO-8DescriptionThe IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707GPbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.PD - 96264IRF8707GPbFStatic @ T = 25°C (unless otherwise specified)IRF8707GPbF3Fig 4. Normalized On-Resistancevs. TemperatureFig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics T J , Junction Temperature (°C)R D S (o n ) , D r a i n -t o -S o u r c e O n R e s i s t a n c e 0.1110100V DS , Drain-to-Source Voltage (V)0.1110100V DS , Drain-to-Source Voltage (V)IRF8707GPbFFig 8. Maximum Safe Operating AreaFig 6. Typical Gate Charge Vs.Gate-to-Source VoltageFig 5. Typical Capacitance vs.Drain-to-Source Voltage 110100V DS , Drain-to-Source Voltage (V)10100100010000C , C a p a c i t a n c e (p F )12345678Q G , Total Gate Charge (nC)0.01.02.03.04.05.0V G S , G a t e -t o -S o u r c e V o l t a g e (V )IRF8707GPbF 5Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-AmbientFig 9. Maximum Drain Current vs.Ambient TemperatureFig 10. Threshold Voltage vs. Temperature255075100125150T A , Ambient Temperature (°C)024681012I D , D r a i n C u r r e n t (A)T J , Temperature ( °C )V G S (t h ), G a t e T h r e s h o l d V o l t a g e (V )Fig 13. Maximum Avalanche Energyvs. Drain Current Fig 12. On-Resistance vs. Gate VoltageFig 15. Gate Charge Test Circuit Fig 14. Unclamped Inductive Test Circuitand WaveformIASV DDFig 16. Gate Charge WaveformIdQgs1Qgs2QgdQgodr2468101214161820V GS, Gate -to -Source Voltage (V)5101520253035RDS(on),Drain-to-SourceOnResistance(mΩ)255075100125150Starting T J , Junction Temperature (°C)50100150200250EAS,SinglePulseAvalancheEnergy(mJ)IRF8707GPbF 7Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-ChannelHEXFET ® Power MOSFETs* V GS = 5V for Logic Level DevicesFig 18b. Switching Time WaveformsFig 18a. Switching Time Test Circuit V DS V d(on)rd(off)fV DDIRF8707GPbFSO-8 Package Outline (Mosfet & Fetky)Dimensions are shown in milimeters (inches)Note: For the most current drawing please refer to IR website at /package/IRF8707GPbF 9Notes:Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25°C, L = 1.38mH, R G = 25Ω, I AS = 8.8A. Pulse width ≤ 400µs; duty cycle ≤ 2%.When mounted on 1 inch square copper board. R θ is measured at T J of approximately 90°C.Data and specifications subject to change without notice.This product has been designed and qualified for the Consumer market.Qualification Standards can be found on IR’s Web site.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .07/2009330.00(12.992) MAX.14.40 ( .566 )12.40 ( .488 )NOTES :1. CONTROLLING DIMENSION : MILLIMETER.2. OUTLINE CONFORMS TO EIA-481 & EIA-541.FEED DIRECTIONTERMINAL NUMBER 112.3 ( .484 )11.7 ( .461 )8.1 ( .318 )7.9 ( .312 )NOTES:1. CONTROLLING DIMENSION : MILLIMETER.2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).3. OUTLINE CONFORMS TO EIA-481 & EIA-541.SO-8 Tape and ReelDimensions are shown in milimeters (inches)Note: For the most current drawing please refer to IR website at /package分销商库存信息:IRIRF8707GTRPBF IRF8707GPBF。

ParameterMax.UnitsI D @ Tc = 25°C Continuous Drain Current, V GS @ -10 V -1.1I D @ Tc = 100°CContinuous Drain Current, V GS @ -10 V -0.69I DMPulsed Drain Current -8.8P D @Tc = 25°C Power Dissipation3.1P D @T A = 25°CPower Dissipation (PCB Mount)** 2.0WLinear Derating Factor0.025Linear Derating Factor (PCB Mount)**0.017W/°CV GS Gate-to-Source Voltage-/+20V E AS Single Pulse Avalanche Energy 100mJ I AR Avalanche Current-1.1A E AR Repetitive Avalanche Energy 0.31mJ dv/dt Peak Diode Recovery dv/dt-5.5V/nsT J, T STGJunction and Storage Temperature Range -55 to + 150IRFL9110PbFHEXFET ® Power MOSFETPD - 95320Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application.05/26/04DescriptionSurface MountAvailable in Tape & Reel Dynamic dv/dt RatingRepetitive Avalanche Rated P-Channel Fast SwitchingEase of ParallelingLead-FreeSOT-223** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material).For recommended footprint and soldering techniques refer to application note #AN-994.ParameterTyp.Max.UnitsR θJC Junction-to-PCB–––40R θJAJunction-to-Ambient. (PCB Mount)**–––60Thermal Resistance°C/WAbsolute Maximum RatingsA 1Soldewring Temperature, for 10 seconds300 (1.6mm from case)°CIRFL9110PbFElectrical Characteristics @ T J = 25°C (unless otherwise specified)Repetitive rating; pulse width limited bymax. junction temperature. ( See fig. 11 )I SD ≤ -4.0A, di/dt ≤−75A/µs, V DD ≤ V (BR)DSS ,T J ≤ 150°CNotes:V DD=-25V, starting T J = 25°C, L =7.7 mHR G = 25Ω, I AS = -4.4A. (See Figure 12)Pulse width ≤ 300µs; duty cycle ≤ 2%.Source-Drain Ratings and CharacteristicsIRFL9110PbF3IRFL9110PbFIRFL9110PbF5元器件交易网IRFL9110PbFIRFL9110PbF7IRFL9110PbFSOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches)IRFL9110PbF 9Data and specifications subject to change without notice.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information . 05/04SOT-223 (TO-261AA) Tape & Reel InformationDimensions are shown in milimeters (inches)4.10 (.161)3.90 (.154)1.85 (.072)1.65 (.065)2.05 (.080)1.95 (.077)12.10 (.475)11.90 (.469)7.10 (.279)6.90 (.272)1.60 (.062)1.50 (.059) TYP.7.55 (.297)7.45 (.294)7.60 (.299)7.40 (.292)2.30 (.090)2.10 (.083)16.30 (.641)15.70 (.619)0.35 (.013)0.25 (.010)FEED DIRECTIONTR13.20 (.519)12.80 (.504)50.00 (1.969) MIN.330.00(13.000) MAX.NOTES :1. CONTROLLING DIMENSION: MILLIMETER.2. OUTLINE CONFORMS TO EIA-481 & EIA-541.3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.3NOTES :1. OUTLINE COMFORMS TO EIA-418-1.2. CONTROLLING DIMENSION: MILLIMETER..3. DIMENSION MEASURED @ HUB.4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.15.40 (.607)11.90 (.469)18.40 (.724) MAX.14.40 (.566)12.40 (.488)44。

Parameter Max.UnitsV CESCollector-to-Emitter Voltage 600VI C @ T C = 25°C Continuous Collector Current 16I C @ T C = 100°C Continuous Collector Current 9.0I CM Pulsed Collector Current 32AI LMClamped Inductive Load Current 32I F @ T C = 100°C Diode Continuous Forward Current 7.0I FM Diode Maximum Forward Current 32t sc Short Circuit Withstand Time 10µsV GEGate-to-Emitter Voltage ± 20V P D @ T C = 25°C Maximum Power Dissipation 60P D @ T C = 100°C Maximum Power Dissipation 24T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf in (1.1 N m)IRG4BC20KDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEFeaturesV CES = 600VV CE(on) typ. = 2.27V@V GE = 15V, I C = 9.0AShort Circuit RatedUltraFast IGBT12/23/03Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, V GE = 15V Generation 4 IGBT design provides tighterparameter distribution and higher efficiency than previous generationIGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurationsIndustry standard TO-220AB package BenefitsPD -94907Parameter Min.Typ.Max.UnitsR θJC Junction-to-Case - IGBT 2.1R θJC Junction-to-Case - Diode3.5°C/WR θCS Case-to-Sink, flat, greased surface0.50 R θJA Junction-to-Ambient, typical socket mount 80WtWeight2 (0.07)g (oz)Thermal ResistanceAbsolute Maximum RatingsW Latest generation 4 IGBTs offer highest power density motor controls possibleHEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching lossesThis part replaces the IRGBC20KD2 and IRGBC20MD2 productsFor hints see design tip 97003 1Lead-FreeIRG4BC20KDPbFParameter Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on) 3451I C = 9.0A Q ge Gate - Emitter Charge (turn-on) 4.97.4nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on) 1421V GE = 15V t d(on)Turn-On Delay Time 54 t r Rise Time 34 T J = 25°Ct d(off)Turn-Off Delay Time 180270I C = 9.0A, V CC = 480V t f Fall Time 72110V GE = 15V, R G = 50ΩE on Turn-On Switching Loss 0.34 Energy losses include "tail"E off Turn-Off Switching Loss 0.30 mJ and diode reverse recovery E ts Total Switching Loss 0.640.96See Fig. 9,10,14t sc Short Circuit Withstand Time 10 µs V CC = 360V, T J = 125°CV GE = 15V, R G = 50Ω , V CPK < 500Vt d(on)Turn-On Delay Time 51 T J = 150°C,See Fig. 11,14t rRise Time37 I C = 9.0A, V CC = 480Vt d(off)Turn-Off Delay Time 220 V GE = 15V, R G = 50Ωt f Fall Time160 Energy losses include "tail"E ts Total Switching Loss0.85 mJ and diode reverse recovery L E Internal Emitter Inductance 7.5 nH Measured 5mm from package C ies Input Capacitance 450 V GE = 0V C oes Output Capacitance61 pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance 14 = 1.0MHz t rr Diode Reverse Recovery Time 3755ns T J = 25°C See Fig. 5590T J = 125°C 14 I F = 8.0A I rr Diode Peak Reverse Recovery Current 3.5 5.0A T J = 25°C See Fig. 4.58.0T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge 65138nC T J = 25°C See Fig. 124360T J = 125°C 16 di/dt = 200Aµs di (rec)M /dtDiode Peak Rate of Fall of Recovery 240 A/µs T J = 25°C See Fig.During t b210 T J = 125°C 17Parameter Min.Typ.Max.Units ConditionsV (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage 0.49 V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage 2.27 2.8I C = 9.0A V GE = 15V3.01 V I C = 16ASee Fig. 2, 5 2.43I C = 9.0A, T J = 150°C V GE(th)Gate Threshold Voltage 3.0 6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage -10 mV/°CV CE = V GE , I C = 250µA g feForward Transconductance 2.9 4.3 S V CE = 100V, I C = 9.0A I CES Zero Gate Voltage Collector Current 250µAV GE = 0V, V CE = 600V1000V GE = 0V, V CE = 600V, T J = 150°C V FM Diode Forward Voltage Drop 1.4 1.7VI C = 8.0A See Fig. 13 1.3 1.6I C = 8.0A, T J = 150°C I GES Gate-to-Emitter Leakage Current ±100nAV GE = ±20VSwitching Characteristics @ T J = 25°C (unless otherwise specified)Electrical Characteristics @ T J = 25°C (unless otherwise specified)nsnsIRG4BC20KDPbF 3Fig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4BC20KDPbFFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4BC20KDPbF 5Fig. 7 - Typical Capacitance vs.Collector-to-Emitter VoltageFig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageFig. 9 - Typical Switching Losses vs. GateResistance Fig. 10 - Typical Switching Losses vs.Junction TemperatureFig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current0.11101000.40.8 1.2 1.6 2.0 2.4 2.8 3.2FMFI n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A ) Forward Voltage Drop - V (V)IRG4BC20KDPbF 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt1002003004005001001000fdi /dt - (A/µs)R R Q - (n C )1001000100001001000fdi /dt - (A/µs)d i (r e c )M /d t - (A /µs )204060801001001000fdi /dt - (A/µs)t - (n s )r r1101001001000fdi /dt - (A/µs)I - (A )I R RMIRG4BC20KDPbFFig. 18a - Test Circuit for Measurement ofI LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t ft2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrIRG4BC20KDPbF 9Vg GATE SIGNALDEVICE UNDER TESTCURRENT D.U.T.VOLTAGE IN D.U.T.CURRENT IN D1t0t1t2Figure 19. Clamped Inductive Load Test CircuitFigure 20. Pulsed Collector CurrentTest Circuit=480V4 X I C @25°CFigure 18e. Macro Waveforms for Figure 18a's Test CircuitIRG4BC20KDPbFNotes:Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)V CC =80%(V CES ), V GE =20V, L=10µH, R G = 50Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot.TO-220AB Package OutlineData and specifications subject to change without notice.233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .12/03分销商库存信息: IRIRG4BC20KDPBF。