IRG4PF50WDPBF中文资料

(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at .
ORDERING INFORMATION (1)
MODEL MAXIMUM INTEGRAL LINEARITY (LSB) MAXIMUM DIFFERENTIAL LINEARITY (LSB) MAXIMUM OFFSET ERROR (mV) PACKAGE TYPE PACKAGE DESIGNATOR TEMPERATURE RANGE ORDERING INFORMATION TRANSPORT MEDIA QUANTITY Small tape and reel 250 Tape and reel 3000 Small tape and reel 250 Tape and reel 3000 Small tape and reel 250 Tape and reel 3000 Small tape and reel 250 Tape and reel 3000
FEATURES
• • • 2.7-V to 5.5-V Analog Supply, Low Power: – 15.5 mW (1 MHz, +VA = 3 V, +VBD = 1.8 V) 1-MHz Sampling Rate 3 V ≤ +VA ≤ 5.5 V, 900-kHz Sampling Rate 2.7 V ≤ +VA ≤ 3 V Excellent DC Performance – ±1.0 LSB Typ, ±1.75 LSB Max INL – ±0.5 LSB Typ, ±1 LSB Max DNL – 16-Bit NMC Over Temperature – ±0.5 mV Max Offset Error at 3 V – ±1 mV Max Offset Error at 5 V Excellent AC Performance at fi = 100 kHz with 92 dB SNR, 102 dB SFDR, –102 dB THD Built-In Conversion Clock (CCLK) 1.65 V to 5.5 V I/O Supply – SPI/DSP Compatible Serial – SCLK up to 50 MHz Comprehensive Power-Down Modes: – Deep Powerdown – Nap Powerdown – Auto Nap Powerdown Unipolar Input Range: 0 V to Vref Software Reset Global CONVST (Independent of CS) Programmable Status/Polarity EOC/INT 16-Pin 4 x 4 QFN Package Multi-Chip Daisy Chain Mode Programmable TAG Bit Output Auto/Manual Channel Select Mode (ADS8330)

TJ = 25°C
tf
Fall time
td(on)
Turn-On delay time
tr
Rise time
— 65 —
— 30 —
IC = 25A, VCC = 196V
— 33 — ns RG = 10Ω, L=200μH, LS= 200nH
td(off) tf tst
EPULSE
Turn-Off delay time Fall time Shoot Through Blocking Time
2
/

240
VGE = 18V
200
VGE = 15V
VGE = 12V
160
VGE = 10V VGE = 8.0V
120
VGE = 6.0V
ICE (A)
80
40
0
0
4
8
12
16
VCE (V)
Fig 1. Typical Output Characteristics @ 25°C
––– 29 ––– ––– 65 ––– ––– 22 ––– — 36 — — 31 — — 112 —
S VCE = 25V, ICE = 25A nC VCE = 200V, IC = 25A, VGE = 15Ve
IC = 25A, VCC = 196V ns RG = 10Ω, L=200μH, LS= 200nH
Parameter Thermal Resistance Junction-to-Case-(each IGBT) d Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) d Weight

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DIP05+有铅原装正品，马来西亚产地IRFD9120PBF IR DIP07+无铅原装正品，马来西亚产地IRFD9220IR DIP05+有铅原装正品，马来西亚产地IRFR120NTRPBF IR SOT-25207+无铅原装正品，马来西亚产地IRFR024NTR IR SOT-25205+有铅原装正品，马来西亚产地IRFR024NTRPBF IR SOT-25207+无铅原装正品，马来西亚产地IRFR220NPBF IR SOT-25207+无铅原装正品，马来西亚产地IRFR420TR IR SOT-25206+有铅原装正品，马来西亚产地IRFR420TRPBF IR SOT-25207+无铅原装正品，马来西亚产地IRFR9024NTRPBF IR SOT-25207+无铅原装正品，马来西亚产地IRFR9120NTRPBF IR SOT-25207+无铅原装正品，马来西亚产地IRFU120NPBF IR TO-25107+无铅原装正品，墨西哥产地IRFU220NPBF IR TO-25107+无铅原装正品，墨西哥产地IRFU430A IR TO-25104+有铅原装正品，墨西哥产地IRFU9120NPBF IR TO-25107+无铅原装正品，墨西哥产地IRF7413TR IR SOP-806+有铅原装正品，马来西亚产地IRF7314TRPBF IR SOP-807+无铅原装正品，马来西亚产地IRFL9110TRPBF IR SOP-806+无铅原装正品，马来西亚产地IRL2203NPBF IR TO-22007+无铅原装正品，墨西哥产地IRL2703PBF IR TO-22007+无铅原装正品，墨西哥产地IRL3103PBF IR TO-22007+无铅原装正品，中国产地IRL3705N IR TO-22005+有铅原装正品，墨西哥产地IRL3803PBF IR TO-22007+无铅原装正品，墨西哥产地IRLML2402TRPBF IR SOT-2307+无铅原装正品，马来西亚产地IRLML2502TRPBF IR SOT-2307+无铅原装正品，马来西亚产地IRLML2803TRPBF IR SOT-2307+无铅原装正品，马来西亚产地IRLML5103TRPBF IR SOT-2307+无铅原装正品，马来西亚产地IRLML5203TRPBF IR SOT-2307+无铅原装正品，马来西亚产地IRLML6302TRPBF IR SOT-2307+无铅原装正品，马来西亚产地IRLML6401TRPBF IR SOT-2307+无铅原装正品，马来西亚产地IRLML6402TRPBF IR SOT-2307+无铅原装正品，马来西亚产地30CPQ060PBF IR TO-24707+无铅原装正品，中国产地30CPQ100PBF IR TO-24707+无铅原装正品，中国产地40CPQ045PBF IR TO-24707+无铅原装正品，中国产地40CPQ060PBF IR TO-24707+无铅原装正品，中国产地40CPQ100IR TO-24705+有铅原装正品，中国产地40CPQ100PBF IR TO-24707+无铅原装正品，中国产地MBR20100CTKPBF IR TO-22007+无铅原装正品，中国产地MBR6045WTPBF IR TO-24707+无铅原装正品，中国产地MUR420RLG ON DO-20107+无铅原装正品，菲律宾产地MUR460RLG ON DO-20107+无铅原装正品，菲律宾产地MUR860G ON TO-22007+无铅原装正品，菲律宾产地MUR8100EG ON TO-22007+无铅原装正品，菲律宾产地MUR1560G ON TO-22007+无铅原装正品，菲律宾产地MUR1620CTG ON TO-22007+无铅原装正品，菲律宾产地MUR1660CTG ON TO-22007+无铅原装正品，菲律宾产地MUR3020PTG ON TO-3P07+无铅原装正品，菲律宾产地MUR3040PTG ON TO-3P07+无铅原装正品，菲律宾产地MUR3060PTG ON TO-3P07+无铅原装正品，菲律宾产地MBR1545CTG ON TO-22007+无铅原装正品，菲律宾产地MBR2045CTG ON TO-22007+无铅原装正品，菲律宾产地MBR2545CTG ON TO-22007+无铅原装正品，菲律宾产地MBR20100CTG ON TO-22007+无铅原装正品，菲律宾产地MBR20200CTG ON TO-22006+无铅原装正品，菲律宾产地FQPF2N60C Fairchild TO-22007+无铅原装正品，韩国产地FQPF5N60C Fairchild TO-22007+无铅原装正品，韩国产地FQP5N60C Fairchild TO-22007+无铅原装正品，韩国产地FQPF8N60C Fairchild TO-22007+无铅原装正品，韩国产地FQP8N60C Fairchild TO-22007+无铅原装正品，韩国产地FQPF10N60C Fairchild TO-22007+无铅原装正品，韩国产地FQPF12N60C Fairchild TO-22007+无铅原装正品，韩国产地FQP50N06Fairchild TO-22007+无铅原装正品，韩国产地IRF630A Fairchild TO-22003+有铅原装正品，韩国产地IRF630B Fairchild TO-22006+无铅原装正品，韩国产地IRF634B Fairchild TO-22006+无铅原装正品，韩国产地IRF640B Fairchild TO-22005+有铅原装正品，韩国产地FGA25N120ANTDTU Fairchild TO-3P07+无铅原装正品，韩国产地STP19NB20FP ST TO-220F04+有铅原装正品，摩洛哥产地STW60N10ST TO-3P05+有铅原装正品，摩洛哥产地STTH1602CT ST TO-22007+无铅原装正品，摩洛哥产地STP55NF06ST TO-22007+无铅原装正品，中国产地STP60NF06ST TO-22007+无铅原装正品，摩洛哥产地STP75NF75ST TO-22007+无铅原装正品，中国产地L6561ST DIP-807+无铅原装正品，中国产地L6562ST DIP-807+无铅原装正品，中国产地L6562DTR ST SOP-807+无铅原装正品，中国产地2SC3320SC FUJI TO-3P07+无铅原装正品，菲律宾产地2SC2625-34SC FUJI TO-3P07+无铅原装正品，菲律宾产地ESAD92-02FUJI TO-3P07+无铅原装正品，菲律宾产地2SK2645FUJI TO-220F07+无铅原装正品，菲律宾产地 型 号品牌封装 年份产地IRFS630B FAIRchild TO-220F07+有铅原装正品，韩国产地IRFS640A FAIRchild TO-220F04+有铅原装正品，韩国产地IRF644B FAIRchild TO-22007+无铅原装正品，韩国产地IRF730FAIRchild TO-22004+有铅原装正品，韩国产地IRF740FAIRchild TO-22003+有铅原装正品，韩国产地IRF830FAIRchild TO-22003+有铅原装正品，韩国产地IRF840FAIRchild TO-22003+有铅原装正品，韩国产地MUR2020IR TO-22002+有铅原装正品，墨西哥产地STPS3045CP ST TO-24702+有铅原装正品，摩洛哥产地STPS30L40CW ST TO-24702+有铅原装正品，摩洛哥产地STPS40L40CW ST TO-24702+有铅原装正品，摩洛哥产地STPS40L45CW ST TO-24702+有铅原装正品，摩洛哥产地STPS4045ST TO-24702+有铅原装正品，摩洛哥产地SSS4N60B FAIRchild TO-220F05+无铅原装正品，韩国产地STP4NE60FP ST TO-220F03+有铅原装正品，摩洛哥产地BTA06-600B ST TO-22007+无铅原装正品，摩洛哥产地 BTA08-600B ST TO-22007+无铅原装正品，摩洛哥产地BTA12-600B ST TO-22007+无铅原装正品，摩洛哥产地BTA16-600B ST TO-22007+无铅原装正品，摩洛哥产地BTA26-600B ST TO-22007+无铅原装正品，菲律宾产地BTA41-600B ST TO-22007+无铅原装正品，菲律宾产地STTH5R60D ST TO-22004+有铅原装正品，摩洛哥产地BUK474-200A PHILIPS TO-220F02+有铅原装正品，菲律宾产地BYV74W-400PHILIPS TO-3P05+无铅原装正品，菲律宾产地TIP110ST TO-22005+无铅原装正品，摩洛哥产地BYV34-500PHILIPS TO-220F04+有铅原装正品，菲律宾产地PSMN009-100P PHILIPS TO-22004+有铅原装正品，菲律宾产地F20JC10新电元TO-220F05+无铅原装正品，日本产地ER1002FCT PEC TO-220F04+有铅原装正品，台湾产地F5KQ60新电元TO-220F03+有铅原装正品，日本产地K2611TOS TO-3P07+无铅原装正品，泰国产地K2837TOS TO-3P07+无铅原装正品，泰国产地K2698TOS TO-3P07+无铅原装正品，泰国产地K2699TOS TO-3P07+无铅原装正品，泰国产地K2645-01MR FUJI TO-220F07+无铅原装正品，菲律宾产地K2761-01MR FUJI TO-220F07+无铅原装正品，菲律宾产地K787NEC TO-3P05+无铅原装正品，日本产地K790TOS TO-3P05+无铅原装正品，泰国产地K791TOS TO-22005+无铅原装正品，泰国产地K793TOS TO-3P05+无铅原装正品，泰国产地K727-01FUJI TO-3P07+无铅原装正品，菲律宾产地K792TOS TO-220F07+无铅原装正品，泰国产地K851TOS TO-3P07+无铅原装正品，泰国产地K962FUJI TO-3P07+无铅原装正品，日本产地K956FUJI TO-3P07+无铅原装正品，日本产地K955FUJI TO-3P07+无铅原装正品，菲律宾产地K1018FUJI TO-3P07+无铅原装正品，菲律宾产地K1020FUJI TO-3PL07+无铅原装正品，菲律宾产地K1058HIT TO-3P07+无铅J162HIT TO-3P07+无铅K1081-01FUJI TO-3P07+无铅原装正品，菲律宾产地K1082FUJI TO-220F07+无铅原装正品，菲律宾产地K1117TOS TO-220F07+无铅原装正品，泰国产地K1118TOS TO-220F07+无铅原装正品，泰国产地K1119TOS TO-220F07+无铅原装正品，泰国产地K1120TOS TO-3P07+无铅原装正品，泰国产地K1180SAK TO-3P07+无铅K1358TOS TO-3P07+无铅原装正品，泰国产地K1507-01MR FUJI TO-220F07+无铅原装正品，菲律宾产地K1522HIT TO-3PL07+无铅K2545TOS TO-220F07+无铅原装正品，泰国产地K2662TOS TO-220F07+无铅原装正品，泰国产地K2750TOS TO-220F07+无铅原装正品，泰国产地K2746TOS TO-3P07+无铅原装正品，泰国产地K30-GR TOS TO-9207+无铅原装正品，泰国产地K1794HIT TO-3P07+无铅原装正品，菲律宾产地K1940-01FUJI TO-3P07+无铅原装正品，菲律宾产地BT169D PHILIPS TO-9208+无铅原装正品，中国产地BT136-600E PHILIPS TO-22008+无铅原装正品，中国产地BT137-600E PHILIPS TO-22008+无铅原装正品，中国产地BT138-600E PHILIPS TO-22008+无铅原装正品，中国产地BT139-600E PHILIPS TO-22008+无铅原装正品，中国产地BT151-500R PHILIPS TO-22008+无铅原装正品，中国产地BT152-600R PHILIPS TO-22008+无铅原装正品，中国产地BT131-600PHILIPS TO-9208+无铅原装正品，中国产地BT134-600E PHILIPS T0-25108+无铅原装正品，中国产地参数IRF510:100V,540mO,5.6A,43W IRF520N:100V,200mO,9.7A,48W IRF530N:100V,90mO,17A,79W IRF530:100V,160mO,14A,88W IRF540N:100V,44mO,33A,140W IRF540NS:100V,44mO,33A,130WIRL54N:100V,44mO,30A,94W IRF610:200V,1500mO,3.3A,36W IRF620:200V,800mO,5.2A,50W IRF630N:200V,300mO,9.5A,82WIRF630:200V,400mO,9A,74W IRF634:250V,450mO,8.1A,74W IRF640N:200V,150mO,18A,150W IRF640N:200V,150mO,18A,150W IRF640NS:200V,150mO,18A,150W IRF640:200V,180mO,18A,125W IRF644:250V,280mO,14A,125W IRF710:400V,3600mO,2A,36W IRF720:400V,1800mO,3.3A,50W IRF730:400V,1000mO,5.5A,74W IRF730:400V,1000mO,5.5A,74W IRF740:400V,550mO,10A,125W IRF820:500V,3KmO,2.5A,50W IRF830:500V,1500mO,4.5A,74W IRF840:500V,850mO,8A,125W IRF1010E:60V,12mO,81A,170W IRF1310N:100V,36mO,42A,160W IRF1404:40V,4mO,162A,200W IRF1405:55V,5.3mO,160A,310W IRF1405S:55V,5.3mO,131A,200W IRF1407:75V,7.8mO,130A,330W IRF2807:75V,13mO,82A,200W IRF2807S:75V,13mO,82A,230WIRF3205:55V,8mO,98A,150W IRF3315:150V,82mO,21A,94W IRF3415:150V,42mO,43A,200W IRF3710:100V,23mO,57A,200W IRF4905:-55V,20mO,-74A,200W IRF4905S:-55V,20mO,-64A,150W IRF4905:-55V,20mO,-74A,200W IRF5210:-100V,60mO,-40A,200W IRF5210S:-100V,60mO,-40A,200WIRF5305:-55V,60mO,-30A,110W IRFR5305:-55V,65mO,-31A,110W IRF5305S:-55V,60mO,-31A,110WIRF9510:-100V,1200mO,-4A,43W IRF9520:-100V,600mO,-6.8A,60W IRF9530:-100V,300mO,-12A,88W IRF9530N:-100V,200mO,-14A,79W IRF9540:-100V,200mO,-19A,150W IRF9540N:-100V,117mO,-23A,140W IRF9610:-200V,3000mO,-1.8A,20W IRF9630:-200V,800mO,-6.5A.74W IRF9640:-200V,500mO,-11A,125W IRF9640S:-200V,500mO,-11A,125W IRFZ24N:60V,70mO,17A,60WIRLZ24N:60V,60mO,17A,60WIRFZ34N:55V,40mO,26A,56W IRFZ44N:55V,17.5mO,41A,83WIRFZ44R:60V,28mO,50A,150W IRFZ44V:60V,16.5mO,55A,115W IRFZ44Z:55V,13.9mO,51A,90WIRLZ44N:60V,39mO,50A,150W IRFZ46N:55V,16.5mO,46A,88W IRFZ46N:55V,16.5mO,46A,88W IRFZ46Z:55V,13.6mO,51A,82WIRFZ48V:60V,12mO,72A,150WIRFZ48N:55V,14mO,64A,94W IRF9Z24N:-55V,175mO,-12A,45W IRF9Z34N:-55V,100mO,-17A,56W IRFBC30:600V,2200mO,3.6A,74W IRFBC40:600V,1200mO,6.2A,125W IRFBC40:600V,1200mO,6.2A,125W25IRFBE30:800V,3000mO,4.1A,125W IRFBG20:1000V,11000mO,1.4A,54W IRFBG30:1000V,5KmO,3.1A,125W IRFBG30:1000V,5KmO,3.1A,125W参数HFA08TB60:600V,8A,55ns8ETH06:600V,8A,30nsIRFB3207:75V,3.6mO,180A,330W IRFB4212:100V,72.5mO,18A,60W IRFB4310:100V,5.6mO,140A,330WIRFB4410:100V,8mO,96A,250W IRFB4710:100V,14mO,75A,200W IRFB11N50A:500V,520mO,11A,170W IRFB18N50K:500V,260mO,17A,220W IRFB31N20D:200V,82mO,31A,200W IRFB38N20D:200V,54mO,44A,320W IRFB260N:200V,40mO,56A,380WIRFP054N:55V,12mO,72A,130WIRFP064N:55V,8mO,98A,150WIRFP140N:100V,52mO,27A,94WIRFP150:100V,55mO,41A,140W IRFP150N:100V,36mO,39A,140W IRFP240:200V,180mO,20A,150W IRFP250N:200V,75mO,30A,214W IRFP254N:250V,125mO,23A,220W IRFP260N:200V,40mO,49A,300W IRFP260N:200V,40mO,49A,300WIRFP264:250V,75mO,38A,280W IRFP264N:250V,60mO,44A,380W IRFP350:400V,400mO,16A,190W IRFP360:400V,200mO,23A,280W IRFP448:500V,600mO,11A,180W IRFP450:500V,400mO,14A,190W IRFP450:500V,400mO,14A,190W IRFP450LC:500V,400mO,14A,190W IRFP460LC:500V,270mO,20A,280W IRFP460A:500V,270mO,20A,280W IRFP460A:500V,270mO,20A,280W IRFP460:500V,270mO,20A,280W IRFP2907:75V,4.5mO,177A,330W IRFP3710:100V,250mO,51A,180W IRFP9140N:-100V,117mO,-21A,120W IRFP9240:-200V,500mO,-12A,150W IRFP90N20D:200V,23mO,94A,580W IRFPC50:600V,600mO,11A,180W IRFPC60:600V,400mO,16A,280W IRFPE40:800V,2000mO,5.4A,150W IRFPE50:800V,1200mO,7.8A,190W IRFPF50:900V,1600mO,6.7A,190W IRFPG50:1000V,2000mO,6.1A,190W IRFPS37N50A:500V,130mO,36A,446W IRG4PC30F:600V,31A,100WIRG4PC40S:600V,60A,160WIRG4PC40W:600V,40A,160W IRG4BC20UD:600V,13A,60W IRG4BC30KD:600V,28A,100W IRG4BC40U:600V,40A,160W IRG4BC40W:600V,40A,160W IRG4PF50W:900V,51A,200W 40TPS12A:1200V,55AIRLZ24N:60V,60mO,17A,60W参数IRFD110:100V,540mO,1A,1.3WIRFD120:100V,270mO,1.3A,1.3WIRFD220:200V,800mO,0.8A,1.3W IRFD9110:-100V,1200mO,-0.7A,1.3W IRFD9120:-100V,600mO,-1A,1.3W IRFD9220:-200V,1500mO,-0.56A,1.3W IRFR120N:100V,210mO,9.1A,48WIRFR024N:55V,75mO,16A,38WIRFR024N:55V,75mO,16A,38WIRFR220N:200V,600mO,5A,43WIRFR420:500V,3000mO,2.4A,42WIRFR420:500V,3000mO,2.4A,42W IRFR9024N:-55V,0.175mO,-11A,38W IRFR9120N:-100V,480mO,6.6A,40WIRFU120N:100V,210mO,9.1A,48WIRFU220N:200V,600mO,5A,43WIRFU430A:500V,1700mO,5A,110W IRFU9120N:-100V,480mO,-6.5A,39WIRL2203N:30V,7mO,116A,180WIRL2703:30V,40mO,24A,45WIRL3103:30V,12mO,64A,94WIRL3705N:55V,10mO,89A,170WIRL3803:30V,9mO,120A,150W IRLML2402:20V,350mO,1.2A,0.54WIRLML2502:20V,80mO,4.2A,1.3W IRLML2803:30V,400mO,1.2A,0.54W IRLML5103:-30V,1KmO,-0.61A,0.54W IRLML5203:-30V,165mO,-3A,1.25W IRLML6302:-20V,900mO,-0.62A,0.54W IRLML6401:-12V,125mO,-4.3A,1.3W IRLML6402:-20V,135mO,-3.7A,1.3W30CPQ060:60V,30A30CPQ100:100V,30A40CPQ045:45V,40A40CPQ060:60V,40A40CPQ100:100V,40A40CPQ100:100V,40AMBR20100CTK:100V,20AMBR6045WT:45V,60AMUR420:200V,4AMUR460:600V,4AMUR860:600V,8AMUR8100E:1000V,8AMUR1560:600V,15AMUR1620CT:200V,16AMUR1660CT:600V,16AMUR3020PT:200V,30AMUR3040PT:400V,30AMUR3060PT:600V,30AMBR1545CT:45V,15AMBR2045CT:45V,20AMBR2545CT:45V,25AMBR20100CT:100V,20AMBR20200CT:200V,20A FQPF2N60C:600V,4700mO,2A,23W FQPF5N60C:600V,2500mO,4.5A,33W FQP5N60C:600V,2500mO,4.5A,100W FQPF8N60C:600V,1200mO,7.5A,48W FQP8N60C:600V,1200mO,7.5A,147W FQPF10N60C:600V,730mO,9.5A,50W FQPF12N60C:600V,650mO,12A,51WFQP50N06:60V,22mO,50A,120WIRF630A:200V,400mO,9A,72WIRF630B:200V,400mO,9A,72W IRF634B:250V,450mO,8.1A,74W IRF640B:200V,180mO,18A,139WFGA25N120AN:1200V,25A,125W STP19NB20FP:200V,150mO,10A,125W STW60N10:100V,25mO,60A,200WSTTH1602CT:200V,16ASTP55NF06:60V,17mO,50A,110W STP60NF06:60V,14mO,60A,110W STP75NF75:75V,11mO,80A,300W2SC3320:500V,15A,80W2SC2625:450V,10A,80WESAD92-02:200V,20A2SK2645:600V,1200mO,9A,50W参数IRFS630B:200V,400mO,9A.72WIRFS640A:200V,180mO,18A139WIRF644B:250V,280mO,14A,125WIRF730:400V,1000mO,5.5A,74WIRF740:400V,550mO,10A,125WIRF830:500V,1500mO,4.5A,74WIRF840:500V,850mO,8A,125WMUR2020：20A，200VSTPS3045：30A，45VSTPS30L40：30A，40VSTPS40L40：40A，40VSTPS40L45：40A，45VSTPS4045：40A，45VSSS4N60B:4A,600V，2.5Ω，33W STP4NE60FP：4A。

PD- 91788IRG4PF50WDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEFeatures• Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC packageCVCES = 900VG EVCE(on) typ. = 2.25V@VGE = 15V, IC = 28An-cha n ne lBenefits• Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching lossesTO-247ACAbsolute Maximum RatingsParameterVCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.Max.900 51 28 204 204 16 204 ± 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m)UnitsV AV W°CThermal ResistanceParameterRθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount WeightMin.––– ––– ––– ––– –––Typ.––– ––– 0.24 ––– 6 (0.21)Max.0.64 0.83 ––– 40 –––Units°C/Wg (oz)1IRG4PF50WDElectrical Characteristics @ TJ = 25°C (unless otherwise specified)V(BR)CES∆V(BR)CES/∆TJVCE(on)Parameter Collector-to-Emitter Breakdown Voltageƒ Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation VoltageVGE(th) ∆VGE(th)/∆TJ gfe ICESGate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance „ Zero Gate Voltage Collector CurrentVFM IGESDiode Forward Voltage Drop Gate-to-Emitter Leakage CurrentMin. 900 — — — — 3.0 — 26 — — — — — —Typ. — 0.295 2.25 2.74 2.12 — -13 39 — — — 2.5 2.1 —Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 3.5mA 2.7 IC = 28A VGE = 15V — V IC = 60A See Fig. 2, 5 — IC = 28A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 50V, IC = 28A 500 µA VGE = 0V, VCE = 900V 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 6.5 mA VGE = 0V, VCE = 900V, TJ = 150°C 3.5 V IC = 16A See Fig. 13 3.0 IC = 16A, TJ = 150°C ±100 nA VGE = ±20VSwitching Characteristics @ TJ = 25°C (unless otherwise specified)Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 160 19 53 71 50 150 110 2.63 1.34 3.97 69 52 270 190 6.0 13 3300 200 45 90 164 5.8 8.3 260 680 120 76 Max. Units Conditions 240 IC = 28A 29 nC VCC = 400V See Fig. 8 80 VGE = 15V — TJ = 25°C — ns IC = 28A, VCC = 720V 220 VGE = 15V, RG = 5.0Ω 170 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 18 5.3 — TJ = 150°C, See Fig. 11, 18 — ns IC = 28A, VCC = 720V — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 135 ns TJ = 25°C See Fig. 245 TJ = 125°C 14 IF = 16A 10 A TJ = 25°C See Fig. 15 TJ = 125°C 15 VR = 200V 675 nC TJ = 25°C See Fig. 1838 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 172IRG4PF50WD40F or b oth:LOAD CURRENT (A)30D uty c y c le : 50% T J = 12 5° C T sink = 90 °C G a te d riv e a s s pe c ifiedP ow er D is s ipation = 40 W S q u a re w a v e :2060% of rated voltageI10Id e a l d io d es0 0.1 1 10 100f, Frequency (KHz)Fig. 1 - Typical Load Current vs. Frequency(Load Current = IRMS of fundamental)10001000I C , Collector-to-Emitter Current (A)TJ = 25 ° C TJ = 150 ° C100I C , Collector-to-Emitter Current (A)100TJ = 150 °CTJ = 25 °C10101 1V GE = 15V 20µs PULSE WIDTH101 5 6 7V CC = 50V 5µs PULSE WIDTH8 9 10VCE , Collector-to-Emitter Voltage (V)VGE , Gate-to-Emitter Voltage (V)Fig. 2 - Typical Output CharacteristicsFig. 3 - Typical Transfer Characteristics3IRG4PF50WD60 3.0VCE , Collector-to-Emitter Voltage(V)VGE = 15V 80 us PULSE WIDTHMaximum DC Collector Current(A)IC = 56 A50402.530IC = 28 A202.0IC = 14 A100 25 50 75 100 125 1501.5 -60 -40 -20020406080 100 120 140 160TC , Case Temperature ( ° C)TJ , Junction Temperature ° C) (Fig. 4 - Maximum Collector Current vs. Case TemperatureFig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature1Thermal Response (Z thJC )D = 0.50 0.20 0.1 0.10 0.05 0.02 0.010.01SINGLE PULSE (THERMAL RESPONSE)P DM t1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak T = PDM x Z thJC + TC J0.001 0.000010.00010.0010.010.11t1 , Rectangular Pulse Duration (sec)Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case4 IRG4PF50WD60005000VGE , Gate-to-Emitter Voltage (V)VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc20VCC = 400V I C = 28A16C, Capacitance (pF)4000Cies12300082000C oes Cres410000 1 10 1000 0 40 80 120 160VCE , Collector-to-Emitter Voltage (V)QG , Total Gate Charge (nC)Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage6.0100Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter VoltageRG = 5.0Ω VGE = 15V VCC = 720VTotal Switching Losses (mJ)Total Switching Losses (mJ)V CC V GE TJ 5.5 I C= 720V = 15V = 25 ° C = 28A5.0IC = 56 A104.5IC = 28 AIC = 14 A4.03.5 0 10 20 30 40 501 -60 -40 -20020406080 100 120 140 160( RG , Gate Resistance Ω )TJ , Junction Temperature ° C ) (Fig. 9 - Typical Switching Losses vs. Gate ResistanceFig. 10 - Typical Switching Losses vs. Junction Temperature5IRG4PF50WD16Total Switching Losses (mJ)128I C , Collector Current (A)RG TJ VCC VGE= 5.0Ω = 150 ° C = 720V = 15V1000VGE = 20V T J = 125 oC1001040 10 20 30 40 50 60SAFE OPERATING AREA1 1 10 100 1000I C , Collector Current (A)VCE , Collector-to-Emitter Voltage (V)Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current100Fig. 12 - Turn-Off SOAIn sta n ta n e o u s F o rw a rd C u rre n t - I F (A )T J = 150°C10T J = 125°C T J = 25°C1 0.0 1.0 2.0 3.0 4.0 5.0 6.0F o rw a rd V o lta g e D ro p - V FM (V )Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current6 IRG4PF50WD300 40VR = 20 0V T J = 125°C T J = 25°C30 200VR = 2 00V T J = 125 °C T J = 25°CI F = 16A I F = 8.0AI R R M - (A )I F = 32Atrr - (n s)20I F = 32A I F = 16A I F = 8.0A100 100 100di f /dt - (A /µ s)10000 100di f /d t - (A /µ s)1000Fig. 14 - Typical Reverse Recovery vs. dif/dt1200Fig. 15 - Typical Recovery Current vs. dif/dt1000VR = 200 V T J = 125°C T J = 25°C900VR = 20 0V T J = 12 5°C T J = 25 °C600I F = 16Adi(rec )M /dt - (A /µ s )I F = 32AQ R R - (nC )100I F = 32 A I F =1 6A I F = 8 .0AI F = 8.0A3000 100di f /d t - (A /µ s)100010 1001000di f /dt - (A /µ s)Fig. 16 - Typical Stored Charge vs. dif/dtFig. 17 - Typical di(rec)M/dt vs. dif/dt7IRG4PF50WDSame type device as D .U.T.80% of Vce430µF D .U .T.90%VgeVC10% 90%t d(off)Fig. 18a - Test Circuit for Measurement ofILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf10% IC 5%t d(on)trtf t=5µs E on E ts = (Eon +Eoff ) EoffFig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningEoff, td(off), tfG A T E V O LT A G E D .U .T . 10% + V g +V gtrr IcQ rr =∫trr id dt Ic dt txtx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic10% Irr VccV pk IrrVccD IO D E R E C O V E R Y W AVEFORMS td(on) tr 5% V c e t2 E on = V c e ieIc dt Vce dt t1 t2 D IO D E R E V E R S E RECOVERY ENERG Y t3 t4∫E rec =∫t4 V d idIc dt Vd dt t3t1Fig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining Eon, td(on), tr 8Fig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining Erec, trr, Qrr, Irr IRG4PF50WDV g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T .V O LT A G E IN D .U .T .C U R R E N T IN D 1t0t1t2Figure 18e. Macro Waveforms for Figure 18a's Test CircuitL 1000V 50V 600 0µ F 100 V Vc*D.U.T.R L= 0 - 720V720V 4 X IC @25°CFigure 19. Clamped Inductive Load Test CircuitFigure 20. Pulsed Collector Current Test Circuit9IRG4PF50WDNotes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19) ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot.Case Outline and Dimensions — TO-247AC3.6 5 (.14 3) 3.5 5 (.14 0) 0.2 5 (.0 1 0) M D B M-A5.5 0 (.2 17)-D-15 .90 (.62 6 ) 15 .30 (.60 2 ) -B-5.3 0 (.20 9) 4.7 0 (.18 5) 2.5 0 (.0 89) 1.5 0 (.0 59) 4N O TE S : 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 1 4 .5 M , 1 982 . 2 C O N T R O L LIN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -24 7A C .2 0 .3 0 (.80 0) 1 9 .7 0 (.77 5) 12X5.5 0 (.2 17) 4.5 0 (.1 77)23-C-LEAD 1234-A S S IG N M E N T S GATE CO LLECT O R E M IT T E R CO LLECT O R*1 4 .8 0 (.5 8 3) 1 4 .2 0 (.5 5 9)4.3 0 (.1 70) 3.7 0 (.1 45)0 .80 (.03 1 ) 0 .40 (.01 6 ) 2.6 0 (.10 2 ) 2.2 0 (.08 7 )*3X C A S2 .40 (.09 4 ) 2 .00 (.07 9 ) 2X 5.4 5 (.21 5)L O N G E R L E A D E D (20m m ) V E R S IO N A V A ILA B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX TO PART NUMBER3X1.4 0 (.0 56) 1.0 0 (.0 39) 0.2 5 (.0 10) M2X3 .40 (.13 3) 3 .00 (.11 8)CONFORM S TO JEDEC OUTLINE TO-247AC (TO-3P)D im en sio ns in M illim e ters a n d (Inche s)WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 / Data and specifications subject to change without notice. 7/9810。