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2SJ79中文资料

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7.8 ± 0.5
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
0.5 ± 0.1
Hitachi Code JEDEC EIAJ Weight (reference value)
TO-220AB Conforms Conforms 1.8 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
2SJ76, 2SJ77, 2SJ78, 2SJ79
Silicon P-Channel MOS FET
Application
High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216
Features
• • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Source (Flange) 3. Drain
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
50 M
元器件交易网
11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08
+0.1
Unit: mm
4.44 ± 0.2 1.26 ± 0.15
6.4
+0.2 –0.1
18.5 ± 0.5
15.0 ± 0.3
1.27
2.7 MAX 14.0 ± 0.5 1.5 MAX
Forward Transfer Admittance vs. Frequency Forward Transfer Admittance yfs (mS) 500 100
10
TC = 25°C VDS = –20 V ID = –10 mA
1.0
0.1 0.05 5 k10 k
100 k 1M 10 M Frequency f (Hz)
Drain Current ID (mA)
–80
=– 25 ° 25 C T
C
–60
75
20 10 5 2 –2 TC = 25°C VDS = –20 V
–40
–20
0
–0.8 –0.4 –1.2 –1.6 –2.0 Gate to Source Voltage VGS (V)
–50 –100 –200 –5 –10 –20 Drain Current ID (mA)
S
2SJ76, 2SJ77, 2SJ78, 2SJ79
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation VGSS ID I DR Pch Pch* Channel temperature Storage temperature Note: 1. Value at TC = 25°C Tch Tstg
VGS = –0.5 V
40
–200
20050 100 NhomakorabeaCase Temperature TC (°C)
150
0
–8 –20 –4 –12 –16 Drain to Source Voltage VDS (V)
Typical Output Characteristics –50 TC = 25°C Drain Current ID (mA) –40 –0.8 –30 –0.7 –0.6 –0.5 –10 –0.4 –0.3
0
–1 –3 –4 –2 –5 Gate to Source Voltage VGS (V)
2SJ76, 2SJ77, 2SJ78, 2SJ79
Typical Transfer Characteristics Forward Transfer Admittance yfs (mS) –100 VDS = –20 V 200 100 50 Forward Transfer Admittance vs. Drain Current
–0.2
VGS = –0.1 V
Typical Transfer Characteristics –500 VDS = –20 V
–1.0 –0.9 Drain Current ID (mA)

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2SJ107_07中文资料

2SJ107_07中文资料


VGDS IG PD Tj Tstg
25
V
−10
mA
200
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
⎪Yfs⎪
12
30
⎯
mS
(Note 2)
Ciss Crss
VDS = −10 V, VGS = 0, f = 1 MHz VGD = 10 V, ID = 0, f = 1 MHz
⎯ 105 ⎯
pF
⎯
32
⎯
pF
RDS (ON) VDS = −10 mV, VGS = 0
(Note 2) ⎯
40
⎯
Ω
Note 1: IDSS classification GR: −2.6~−6.5 mA, BL: −6~−12 mA, V: −10~−20 mA Note 2: Condition of the typical value IDSS = −5 mA
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance Reverse transfer capacitance Drain-source ON resistance
IGSS
VGS = 25 V, VDS = 0
Absolute Maximum Ratings (Ta = 25°C)
三极管参数大全2

三极管参数大全2

2SK33 N-FET 20 V 20 mA 0,15 W - -
2SK40 N-FET 50 V 6,5 mA - - -
2SK55 N-FET 18 V 14 mA - - -
2SD350 SI-NPN 1500 V 5 A 22 W - -
2SD350A SI-NPN 1500 V 5 A 22 W - -
2SD415 SI-NPN 100 V 0,8 A 10 W - -
2SD424 SI-NPN 160 V 15 A 150 W - -
2SK168 N-FET 30 V 20 mA 0,2 W - -
2SK170 N-FET 40 V 20 mA 0,4 W - -
2SK83 N-FET 25 V 10 mA 0,1 W - -
2SJ103 P-FET 50 V 2,6 mA - - -
2SK107 N-FET 9 V 20 mA 250 mW - -
2SD401 SI-NPN 200 V 2 A 20 W 10 MHz -
2SD414 SI-NPN 80 V 0,8 A 10 W - -
2SD476 SI-NPN 70 V 4 A 40 W 7 MHz -
2SD478 SI-NPN 200 V 2 A 30 W - -
2SD545 SI-NPN 25 V 1,5 A 0,5 W - -
2SD549 N-DARL 30 V 1,5 A 15 W - -
2SK152 N-FET 15 V 9,5 mA - - -
2SK161 N-FET 18 V 0,01 A 0,2 W - -
2SD386 SI-NPN 200 V 3 A 25 W 8 MHz -
2SC4793中文资料

2SC4793中文资料

TOSHIBA Transistor Silicon NPN Epitaxial Type2SC4793Power Amplifier ApplicationsDriver Stage Amplifier Applications• High transition frequency: f T = 100 MHz (typ.) • Complementary to 2SA1837Absolute Maximum Ratings (Tc = 25°C)Characteristics Symbol Rating UnitCollector-base voltage V CBO 230 V Collector-emitter voltage V CEO 230 V Emitter-base voltage V EBO 5 V Collector current I C 1 A Base current I B 0.1 A Ta = 25°C 2.0 Collector powerdissipationTc = 25°CP C20WJunction temperature T j 150 °C Storage temperature rangeT stg−55 to 150°CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Unit: mmJEDEC― JEITA ―TOSHIBA 2-10R1AWeight: 1.7 g (typ.)Electrical Characteristics (Tc = 25°C)Typ.Max UnitCondition Min Characteristics Symbol TestCollector cut-off current I CBO V CB = 230 V, I E = 0 ―― 1.0 μA Emitter cut-off current I EBO V EB = 5 V, I C = 0 ―― 1.0 μA Collector-emitter breakdown voltage V (BR) CEO I C = 10 mA, I B = 0 230 ―― V DC current gain h FE V CE = 5 V, I C = 100 mA 100 ― 320Collector-emitter saturation voltage V CE (sat)I C = 500 mA, I B = 50 mA ―― 1.5 V Base-emitter voltage V BE V CE = 5 V, I C = 500 mA ―― 1.0 V Transition frequency f T V CE = 10 V, I C = 100 mA ― 100 ― MHz Collector output capacitance C ob V CB = 10 V, I E = 0, f = 1 MHz ― 20 ― pF MarkingC4793lead (Pb)-free package orlead (Pb)-free finish.Collector-emitter voltage V CE (V) I C – V CEC ol le c t o r c u r r e n tI C (A )Base-emitter voltage V BE (V)I C – V BEC o l l ec t o r c u r r e n t I C(A )Collector current I C (A)V CE (sat) – I CD C c u r r e n t g a i nh F ECollector current I C (A)V CE (sat) – I CC o l l e c t o r -e m i t t e r s a t u r a t io n vo l t a g e V C E (s a t )(V )Collector current I C (mA) f T – I CT r a n s it i on f r e q u e n c yf T (M H z )Collector-emitter voltage V CE (V)Safe Operating AreaC o l l e c t o r c u r r e n t I C (A )131030 100 300RESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。

纯甲类末级无反馈功率放大器

纯甲类末级无反馈功率放大器


但音量电位器作这样连接也有它的不足之处。对信号源来说，调动音量电位器时信号源的负载将随之产生变化，增大音量时放大器的输出阻抗随之增加。当将音量减小至零时，放大器的输入阻抗则等于R1。由此可知R1是一个重要的参数，取值不能太小。
R1取值小一些对信噪比和频率特性有利，但有可能加重信号源的负载。R1取值大一些则对减轻信号源负载有利。综合考虑之后该放大器电路的制作者认为在5kΩ～20kΩ之间选取较为适宜。于是在电路中将R1取为5kΩ。
共源-共基电路的基极分压电阻用得大一些效果要更好一些，可以考虑改用220kΩ和100kΩ替代电路中的110kΩ、50kΩ进行分压。从改善信噪比、提高稳定性和改善CMRR考虑没有采用过去常采用的恒流二极管和稳压二极管的电路方式。
电阻负反馈电路可根据需要选择，选择10kΩ和1.1kΩ时放大器增益为10倍，将10kΩ换成5kΩ时增益为5.5倍，换成20kΩ的话增益为19倍。当放大器负反馈量大增益较小时，为了防止放大器自激，应在图1注有*的位置接入一个2～10pF的瓷介电容器进行相位补偿。该机放大器增益为10倍，不接该电容器也不会发生自激。
由于将每个输出管的静态工作电流设计为0.44A，从输出管2SK722和2SJ131的传输特性知FET栅源间的偏置电压应为2.6V左右，上下两管加起来约需5V。若再考虑到输出管源极电阻0.22Ω上的电压降，则末级的偏置电压应在5V以上。
偏置电路参数的估算步骤如下，将2SK213/2SJ76的漏极电流取为25mA，其偏置电压为1V左右。将2SC2856/2SA1191的集电极电流取为2mA。由此计算出2SK213/2SJ76的源极电阻均为100Ω。为了便于调整将2SK213/2SJ76栅极间的电阻用2kΩ，半可变电阻和2.2kΩ固定电阻串联组成。