IDT54FCT244SOB中文资料

TEST CONDITIONS
Tamb (°C)
SYMBOL PARAMETER
OTHER
25
−40 to +85 −40 to +125 UNIT
VCC (V)
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
VIH
HIGH-level input
voltage
2.0
1.5 −
−
For TSSOP packages: above 60 °C the value of PD derates linearly with 5.5 mW/K.
1999 Sep 28
5
元器件交易网
Philips Semiconductors
Octal buffer/line driver; 3-state

CO
output capacitance
4.0 4.0 pF
CPD
power dissipation CL = 50 pF;
10
12
pF
capacitance
f = 1 MHz;
notes 1 and 2
Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW).
IO
DC output source or sink current −0.5 V < VO < VCC + 0.5 V
ICC
DC VCC or GND current
Tstg
storage temperature range
PD
power dissipation per package for temperature range: −40 to +125 °C; note 2

244LD型智能浮筒液位(界位)变送器辽制目录1. 概述.............................................................. - 0 -2. 产品特色............................................................ - 1 -3. 主要技术参数........................................................ - 2 -4. 变送器选型表........................................................ - 3 -5. 测量原理............................................................ - 4 -6. 安装与电气连接...................................................... - 5 -7. 运行调试............................................................ - 7 -8. 现场显示............................................................ - 8 -9. 维护、修理.......................................................... - 8 -10. 安全要求........................................................... - 9 -11. 变送器外形图及安装尺寸............................................ - 10 -12. 变送器的供电...................................................... - 11 -13. 订购仪表注意事项.................................................. - 13 -14. 包装、标志、运输及贮存............................................ - 13 -15. 计算公式及计算方法................................................ - 14 -16.故障分析与排除..................................................... - 15 -17. 变送器的调试...................................................... - 14 -1.概述244LD型智能浮筒液(界)位变送器在工况下可以实现持续的液体液位、界位及密度的测量。

8-Bit TransceiverCY54/74FCT245TSCCS018 - May 1994 - Revised February 2000Data sheet acquired from Cypress Semiconductor Corporation.Data sheet modified to remove devices not offered.Copyright © 2000, T exas Instruments IncorporatedFeatures•Function, pinout, and drive compatible with FCT, and F logic•FCT-D speed at 3.8 ns max. (Com’l),FCT-C speed at 4.1 ns max. (Com’l),FCT-A speed at 4.6 ns max. (Com’l)•Reduced V OH (typically = 3.3V) versions of equivalent FCT functions•Edge-rate control circuitry for significantly improved noise characteristics •Power-off disable feature •ESD > 2000V•Matched rise and fall times•Fully compatible with TTL input and output logic levels •Extended commercial range of −40˚C to +85˚C •Sink current 64 mA (Com’l), 48 mA (Mil)Source current 32 mA (Com’l), 12 mA (Mil)Functional DescriptionThe FCT245T contains eight non-inverting bidirectional buff-ers with three-state outputs and is intended for bus oriented applications.For the FCT245T,current sinking capability is 64mA at the A and B ports.The Transmit/Receiver (T/R)input determines the direction of data flow through bidirectional transceiver.Transmit (Active HIGH)enables data from A ports to B ports.The output enable (OE),when HIGH,disables both the A and B ports by putting them in a High Z condition.The outputs are designed with a power-off disable feature to allow for live insertion of boards.Function Table [1]OE T/R Operation L L B Data to Bus A L H A Data to Bus B HXHigh Z StateNote:1.H = HIGH Voltage Level. L = LOW Voltage Level. X = Don’t Care.Logic Block DiagramPin ConfigurationsA 0A 1A 2A 3A 4A 5A 6A 7OEB 0B 1B 2B 3B 4B 5B 6B 7T/R4891011127651516171832120131419A 6A 5A 3B 1B 4B 0B 7V CC GND B 3Top ViewA 2LCCT/R A 0A 1A 7B 5B 612345678910111216171819201314V CC 15Top ViewB 2A 4OEA 0A 1A 2A 3A 4A 5A 6A 7OEB 0B 1B 2B 3B 4B 5B 6B 7T/R GNDDIP/SOIC/QSOPMaximum Ratings[2,3](Above which the useful life may be impaired.For user guidelines, not tested.)Storage T emperature.....................................−65°C to +150°C Ambient T emperature withPower Applied..................................................−65°C to +135°C Supply Voltage to Ground Potential..................−0.5V to +7.0V DC Input Voltage.................................................−0.5V to +7.0V DC Output Voltage..............................................−0.5V to +7.0V DC Output Current (Maximum Sink Current/Pin).......120 mA Power Dissipation..........................................................0.5W Static Discharge Voltage............................................>2001V (per MIL-STD-883, Method 3015)Operating RangeRange RangeAmbientTemperature V CC Commercial DT0°C to +70°C5V± 5% Commercial T, AT, CT−40°C to +85°C5V± 5% Military[4]All−55°C to +125°C5V± 10%Electrical Characteristics Over the Operating RangeParameter Description Test Conditions Min.Typ.[5]Max.Unit V OH Output HIGH Voltage V CC=Min., I OH=−32 mA Com’l 2.0VV CC=Min., I OH=−15 mA Com’l 2.4 3.3VV CC=Min., I OH=−12 mA Mil 2.4 3.3V V OL Output LOW Voltage V CC=Min., I OL=64 mA Com’l0.30.55VV CC=Min., I OL=48mA Mil0.30.55V V IH Input HIGH Voltage 2.0V V IL Input LOW Voltage0.8V V H Hysteresis[6]All inputs0.2V V IK Input Clamp Diode Voltage V CC=Min., I IN=−18 mA−0.7−1.2V I I Input HIGH Current V CC=Max., V IN=V CC5µA I IH Input HIGH Current V CC=Max., V IN=2.7V±1µA I IL Input LOW Current V CC=Max., V IN=0.5V±1µA I OS Output Short Circuit Current[7]V CC=Max., V OUT=0.0V−60−120−225mA I OFF Power-Off Disable V CC=0V, V OUT=4.5V±1µACapacitance[6]Parameter Description Typ.[5]Max.UnitC IN Input Capacitance510pFC OUT Output Capacitance912pF Notes:2.Unless otherwise noted, these limits are over the operating free-air temperature range.3.Unused inputs must always be connected to an appropriate logic voltage level, preferably either V CC or ground.4.T A is the “instant on” case temperature.5.Typical values are at V CC=5.0V, T A=+25˚C ambient.6.This parameter is specified but not tested.7.Not more than one output should be shorted at a time.Duration of short should not exceed one second.The use of high-speed test apparatus and/or sampleand hold techniques are preferable in order to minimize internal chip heating and more accurately reflect operational values.Otherwise prolonged shorting ofa high output may raise the chip temperature well above normal and thereby cause invalid readings in other parametric tests.In any sequence of parametertests, I OS tests should be performed last.Power Supply CharacteristicsParameter DescriptionTest ConditionsTyp.[5]Max.Unit I CC Quiescent Power Supply Current V CC =Max., V IN ≤0.2V , V IN ≥V CC −0.2V 0.10.2mA ∆I CC Quiescent Power Supply Current (TTL inputs HIGH)V CC =Max., V IN =3.4V ,[8]f 1=0, Outputs Open0.5 2.0mA I CCDDynamic Power Supply Current [9]V CC =Max., One Input Toggling,50% Duty Cycle, Outputs Open,T/R or OE=GND andV IN ≤0.2V or V IN ≥V CC −0.2V0.060.12mA/MHzI CTotal Power Supply Current [10]V CC =Max.,50%Duty Cycle,Outputs Open,One Bit Toggling at f 1=10 MHz,T/R or OE=GND andV IN ≤0.2V or V IN ≥V CC −0.2V0.7 1.4mAV CC =Max.,50%Duty Cycle,Outputs Open,One Bit Toggling at f 1=10 MHz,T/R or OE=GND and V IN =3.4V or V IN =GND 1.2 3.4mAV CC =Max.,50%Duty Cycle,Outputs Open,Eight Bits Toggling at f 1=2.5 MHz,T/R or OE=GND andV IN ≤0.2V or V IN ≥V CC −0.2V1.32.6[11]mAV CC =Max.,50%Duty Cycle,Outputs Open,Eight Bits Toggling at f 1=2.5 MHz,T/R or OE=GND and V IN =3.4V or V IN =GND3.310.6[11]mANotes:8.Per TTL driven input (V IN =3.4V); all other inputs at V CC or GND.9.This parameter is not directly testable, but is derived for use in Total Power Supply calculations.10.I C=I QUIESCENT + I INPUTS + I DYNAMIC I C =I CC +∆I CC D H N T +I CCD (f 0/2 + f 1N 1)I CC =Quiescent Current with CMOS input levels∆I CC =Power Supply Current for a TTL HIGH input (V IN =3.4V)D H =Duty Cycle for TTL inputs HIGH N T =Number of TTL inputs at D HI CCD =Dynamic Current caused by an input transition pair (HLH or LHL)f 0=Clock frequency for registered devices, otherwise zero f 1=Input signal frequency N 1=Number of inputs changing at f 1All currents are in milliamps and all frequencies are in megahertz.11.Values for these conditions are examples of the I CC formula. These limits are specified but not tested.Document #: 38−00318−BSwitching Characteristics Over the Operating RangeParameter Description FCT245TFCT245ATUnit Fig.No.[13]MilitaryCommercial MilitaryCommercial Min.[12]Max.Min.[12]Max.Min.[12]Max.Min.[12]Max.t PLH t PHL Propagation Delay A to B or B to A 1.57.5 1.57.0 1.5 4.9 1.5 4.6ns 1, 3t PZH t PZL Output Enable Time OE or T/R to A or B 1.510.0 1.59.5 1.5 6.5 1.5 6.2ns 1, 7, 8t PHZ t PLZOutput Disable Time OE or T/R to A or B1.510.01.57.51.56.01.55.0ns1, 7, 8Switching Characteristics Over the Operating Range (continued)Parameter DescriptionFCT245CTFCT245DT Unit Fig.No.[13]MilitaryCommercial Commercial Min.[12]Max.Min.[12]Max.Min.[12]Max.t PLH t PHL Propagation Delay A to B or B to A 1.5 4.5 1.5 4.1 1.5 3.8ns 1, 3t PZH t PZL Output Enable Time OE or T/R to A or B 1.5 6.2 1.5 5.8 1.5 5.0ns 1, 7, 8t PHZ t PLZOutput Disable Time OE or T/R to A or B1.55.21.54.81.54.3ns1, 7, 8Ordering InformationSpeed (ns)Ordering CodePackage Name Package TypeOperating Range 3.8CY74FCT245DTQCT Q520-Lead (150-Mil) QSOP CommercialCY74FCT245DTSOC/SOCT S520-Lead (300-Mil) Molded SOIC 4.1CY74FCT245CTQCT Q520-Lead (150-Mil) QSOP Commercial CY74FCT245CTSOC/SOCT S520-Lead (300-Mil) Molded SOIC 4.5CY54FCT245CTDMB D620-Lead (300-Mil) CerDIP Military CY54FCT245CTLMB L6120-Square Leadless Chip Carrier 4.6CY74FCT245ATPC P520-Lead (300-Mil) Molded DIP Commercial CY74FCT245ATQCT Q520-Lead (150-Mil) QSOP CY74FCT245ATSOC/SOCTS520-Lead (300-Mil) Molded SOIC 4.9CY54FCT245ATDMB D620-Lead (300-Mil) CerDIP Military CY54FCT245ATLMB L6120-Square Leadless Chip Carrier 7.0CY74FCT245TQCT Q520-Lead (150-Mil) QSOP Commercial CY74FCT245TSOC/SOCT S520-Lead (300-Mil) Molded SOIC 7.5CY54FCT245TDMB D620-Lead (300-Mil) CerDIP Military CY54FCT245TLMBL6120-Square Leadless Chip CarrierNotes:12.Minimum limits are specified but not tested on Propagation Delays.13.See “Parameter Measurement Information” in the General Information section.Package Diagrams20-Lead (300-Mil)CerDIP D6MIL −STD −1835D −8 Config.A20-Pin Square Leadless Chip Carrier L61MIL −STD −1835 C −2A20-Lead (300-Mil)Molded DIP P5Package Diagrams (continued)20-Lead Quarter Size Outline Q520-Lead(300-Mil)Molded SOIC S5IMPORTANT NOTICETexas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements.CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER’S RISK.In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards.TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.Copyright © 2000, Texas Instruments Incorporated。

常用IC技术参数公司型号功能简介MAX MAX1482EPD RS-485/RS-422接口的低功耗收发器。

有斜率抑制功能，速率高达250kbps,工作电流20uA。

MAX1482为全双工工作模式，MAX1483为半双工。

MAX MAX1483EPAMAX MAX1487MJA RS-485/RS-422接口的低功耗收发器。

发送速率高达2.5M bps,半双工通信MAX MAX485MJAMAX MAX488MJAMAX MAX489EPDMAX MAX490MJAMAX MAX1489EEPD +/-15KV ESD保护，四心线，低功耗RS-232接口接收器。

速率120kbps,工作电流350uA.MAX MAX202ECPE +/-15kv ESD保护，RS-232接口收发器。

工作电压+5V，速率120KbpsMAX MAX202EEPEMAX MAX241ECWIMAX MAX233EPP 多通道的RS-232接口主接收机。

MAX MAX238ENGMAX MAX3244EEAI 工作电压3.0--5.5V,工作电流1uA,速率1Mbps,RS-232接口，可自动关断正极的收发机。

MAX MAX354MJE 出错保护类似多路器MAX MAX354EPEMAX MAX355EPEMAX MAX382EWN 低电压，8信道/双4信道，多路器，可关闭输入MAX MAX391MJE 精度高，四心线，单刀单掷开关MAX MAX4501EPA 低电压，SPST(单刀单掷开关），COMSMAX MAX469EPE RGB视频缓冲器，2-信道，三芯绞线MAX MAX690AEPA 微处理器管理电路MAX MAX692AMJAMAX MAX805LMJAMAX MAX690MJA 有监测系统和电池转换功能的uP重置ICMAX MAX691MJE/883MAX MAX695MJEMAX MAX702EPA 有重置功能的可调整门限载噪比的电源监控器MAX MAX705MJA 低消耗，uP管理电路MAX MAX706MJAMAX MAX708MJAMAX MAX708ESAMAX MAX813LMJAMAX MAX730AEPA 5V,下降的，电流模式，PWM DC-DC变频器MAX MAX732MJA +12V/+15V,上升的，电流模式，PWM调整器MAX MAX776EPA -5V/-12V/-15V或可调整，高效，低IQ转换DC-DC-控制器MAX MAX791MJE 微处理器管理电路MAX MAX799EPE 提供给CPU电源的有同步整流器的下降控制器MAX MAX8212MJA 有可编程电压监控功能的微处理电压监控器MAX MAX840ESA 低噪音调节，GaAsFET标准-2V偏压MAX MAX865EUA 简单紧密，双输出电荷泵MAX MAX909EPA 单/双/四心线，高速率，低功率，5V TTL比较器MAX MAX942ESA 高速率，低功耗，3V/5V，Rail-to-Rail单一供电比较器MAX MAX954EPA 极低功耗，单一供电Op Amp+比较器+参考AD AD3703AD AD518SH 宽带，低成本，运算放大器AD AD5539SQ 宽频精密运算放大器AD AD571SD/883 10-bit,包括定位和时钟的A/D转换器AD AD574ASD/883B 12-bit，完整的A/D转换器AD AD7502SQ/883 4-信道，微分多路器AD AD7503SQ/883 8-信道，多路器AD AD843SQ/883 34MHz,CBFET快速稳定运算放大器AD AD9617SQ/883B 低配电，精密，宽带运算放大器AD ADSP-21062CS160 SHARC,40MHz,120MFLOPS,5V,浮点数字信号处理器AD ADSP-21062KS160AD ADG528ATQ/883 可关闭，8-信道多路器NS ADC0808CJ 8-bit,兼容微处理器，含8通道多路器的A/D转换器NS ADC0804LCJ 8-bit,uP 可兼容，A/D转换器NS DAC1230LCJ 12-bit,兼容微处理器，双缓冲D/A转换器NS DAC0832LCJ 12-bit,兼容微处理器，双缓冲D/A转换器NS DAC0802LCJ 8-bit,D/A转换器AD DAC8143FP 12-bit,串行输入，系列数模转换器DATEL ADC-500BMM A/D转换器DATEL ADC-505BMM A/D转换器DATEL ADC-815MM A/D转换器DATEL ADC-HS12BMM A/D转换器DATEL DAC-HK12BMM D/A转换器DATEL DAC-HZ12BMM D/A转换器DATEL DAC-HF12BMM D/A转换器DATEL SHM-6MC 微电子，同步采样放大器DATEL SHM-7MC 视频，高速，同步采样放大器DATEL SHM-45MM 高速合成，精密，同步采样放大器DATEL MX1616C COMS 多路器CYP CY7C128A-35DMB 8-bit,高性能，CMOS静态存储器CYP CY7C168-45DMB 4-bit,高性能，CMOS静态存储器CYP CY7C185A-35DMB 8-bit,高性能，CMOS静态存储器CYP CY7C194-25DMB 4-bit,高性能，CMOS静态存储器CYP CY7C197-25DMB 1-bit,高性能，CMOS静态存储器CYP CY7C197-35DMBCYP CY7C199-15DMB 异步静态存储器（Async SRAM）CYP CY7C199-25DMBCYP CY7C199-35DMBCYP CY7C244-45WC 可擦可编程只读存储器CYP CY7C245A-15WC 高性能，2K*8，电子可编程只读存储器CYP CY7C245A-25WMBCYP CY7C245A-25DMBCYP CY7C245A-35WMBCYP CY7C256-45WMB 32K*8 电源可编程只读存储器CYP CY7C261-25WMB 可编程只读存储器（FROM）CYP CY7C261-25DMBCYP CY7C261-35WCCYP CY7C261-45DMBCYP CY7C263-35WCCYP CY7C263-35DMBCYP CY7C263-55DMBCYP CY7C263-20WCCYP CY7C263-25WCCYP CY7C263-55WMBCYP CY7C264-20WCCYP CY7C264-45WCCYP CY7C264-55WCCYP CY7C264-55WMBCYP CY7C265-18WC 可编程只读存储器（FROM）CYP CY7C271-55WMB 可编程只读存储器（FROM）CYP CY7C277-40DMB 可改编程序的可编程只读存储器CYP CY7C291A-25WC 可编程只读存储器（FROM）CYP CY7C291-35WMB 高性能，2K*8，可编程只读存储器CYP CY7C342-30HC 128个宏单位，可改编程序逻辑驱动器CYP CY7C344-20WC MAX340系列高密度可编程逻辑器件（EPLD）CYP VIC64-UMB 含D64功能的VME bus界面控制器CYP CY7C964A-UMB VME busWSI WS57C291B-35T 可擦除可编程只读存储器WSI WS57C45-25T 军用2k*8已注册CMOS可编程只读存储器PROMWSI WS57C49C-35T 军用高速8K*8CMOS可编程只读存储器PROMWSI WS57C49C-35DPSD PSD313A-20L 低成本微控制器外围设备IDT IDT7134LA35CB *8，5V，异步双信道静态存储器IDT IDT7164L35TDB 64K异步静态存储器IDT IDT7187L25DB 64K异步静态存储器IDT IDT7201LA20TDB 512*9异步FIFO，5VIDT IDT7201LA25TPIIDT IDT7202LA50TDB 1K*9,异步FIFO,5VIDT IDT7202LA30TDBIDT IDT7202LA25TPIIDT IDT7203L25TPI 2K*9，异步FIFO，5VIDT IDT7204L25TPI 4K*9,异步FIFO,5VIDT IDT7205L25TPI 8K*9,异步FIFO,5VIDT IDT49FCT805APY 输出端磁盘缓存块，1：5双重时钟驱动，w/CMOS输出IDT IDT49FCT805BTDBIDT IDT49FCT805BTEBIDT IDT54FCT139TDB 5V,8进制，高激励TLL电平IDT IDT54FCT161DB 5V,8进制，TLL,高标准驱动器,同步可调二进制计数器IDT IDT54FCT16244TEB 5V,双精度，高驱动器，16-bit缓冲器/线路激励器IDT IDT54FCT163ATDB 5V,八进制，高激励TLL电平IDT IDT54FCT244TDB 5V,8进制CMOS缓冲器/线路激励器IDT IDT54FCT245ADB 5V,CMOS标准，8进制双向收发器IDT IDT54FCT245TDB 5V,CMOS标准，8进制双向收发器IDT IDT54FCT245ATLB 八进制，CMOS双向收发器IDT IDT54FCT273TDB D型，变址浮点运算，边缘触发IDT IDT54FCT373ATDB CMOS,八进制，快速开关IDT IDT54FCT373ATLBIDT IDT54FCT521TDB 5V,CMOS标准，8-bit恒等式比较仪IDT IDT54FCT573TDB 5V,8进制，CMOS标准，可穿透寄存器IDT IDT54FCT574DB 5V,CMOS标准，8进制IDT IDT54FCT2245TDB 3-状态，八进制，总线收发器IDT IDT54FCT2245ATLBAD OP07AJ/883 超低偏移电压运算放大器AD OP07AZ/883AD OP07EZPMI OP27AJ/883 低噪声，精密运算放大器PMI OP10CY 双重，匹配仪器运算放大器XIL XC1701LP8I 扩展内存，可编程门控系统XIL XC3030-70PG84IBB OPA111AM 低噪声，高精度，运算放大器BB OPA111BMBB OPA501AM 高电流，高功率，运算放大器BB OPA541BM 高功率单片运算放大器BB OPA541SMBB SHC298AM 单片机采样/控制放大器HAR DG308AAK/883 单刀单掷，CMOS，模拟开关SI DG403DJ 低功耗，高速，模拟开关LIN SG1524BJ 脉宽调节器UC UC1526J 脉宽调节器UC UC1611J 四心线，肖特基二极管阵列UC UC2543N 电源管理电路UC UC2637N 直流发动机驱动器的开关控制器UC UC1706J 限流，高速MOSFET驱动器UC UC1708J 非转换高速电源驱动器UC UC1825J 高速PWM控制器UC UC2825N 高速PWM控制器UC UC1833J 精密低失真线性控制器UC UC1836J 高功率校准控制器UC UC1842J 电流模式PWM控制器LIN SG1842J PWM电流模式脉宽调节器UC UC1843J 电流模式PWM控制器UC UC1875J 相移谐振控制器MOT UC2842AN PWM电流模式脉宽调节器LIN SG1843Y PWM电流模式脉宽调节器UC UC1844J 电流模式PWM控制器LIN SG1844Y PWM电流模式脉宽调节器LIN SG2003/883 外围设备驱动器UC UC2844N PWM电流模式脉宽调节器UC UC1845J 电流模式PWM控制器LIN SG1845J PWM电流模式脉宽调节器UC UC1846J 电流模式PWM控制器UC UC1879J 相移谐振控制器UC UC1907J 负载共享控制器TI UC2580D-4UC UCC2803J 低功率，BiCMOS电流模式PWM UC UCC2804J 低功率，BiCMOS电流模式PWM UC UCC283T-5 低功率，3A，低失真调整器UC UC283T-ADJTI UC2832DW 精密低失真线性控制器TI UC2832NTI UC2836N 高功率调整控制器UC UC2875N 相移谐振控制器UC UC2902N 负载共享控制器UC UC2907N 负载共享控制器LIF SG3503M 电压参考电路TI UC3837N 相移谐振控制器LIN SG7812AT/883B 电压调整器TI SN55107AJ 双重线性接收机TI SN55110AJ 双重线性激励器TI SN55113J 双微分线性激励器TI SN55114J 双微分线性激励器TI SN55121J 双重单端，普通用线性激励器TI SNJ55121JTI SNJ55138J 四总线收发器TI SN55173J 四倍微分线路接收机TI SN55182J 双重微分线路接收机TI SNJ55182JTI SN55183J 双重微分线路激励器TI SN55188J 四倍线路激励器TI SNJ55188JTI SN55189J 四倍线路激励器TI SNJ55189JTI SN55451BJG 双重，极高速，高电流，外围激励器TI SN55452BJG 双重，极高速，高电流，外围激励器TI SNJ55462JG 双重，高电压，高电流，外围激励器TI SN55463JG 双重，高电压，高电流，外围激励器TI SN65176 双向线路收发器TI SN55ALS195J 四倍微分线路接收机TI PAL16L8-15MJB 高性能脉冲电路AMD PAL16L8-BMJ/883 TTL,可编程阵列逻辑电路LAT GAL16V8D-7LD/883 高性能，ECMOS 可编程逻辑电路PLDLAT GAL16V8D-10LD/883 高性能，ECMOS 可编程逻辑电路PLDLAT GAL16V8D-15LD/883 高性能，ECMOS 可编程逻辑电路PLDLAT GAL16V8D-20LD/883 高性能，ECMOS 可编程逻辑电路PLDLAT GAL16V8-10LPILAT GAL16V8D-15LJI 高性能，ECMOS 可编程逻辑电路PLDLAT GAL16V8-20QPI 通用可编程逻辑电路LAT GAL20V8B-10LD/883 高性能，ECMOS 可编程逻辑电路PLD（普通用）LAT GAL20V8B-15LD/883 高性能，ECMOS 可编程逻辑电路PLD（普通用）LAT GAL20V8B-20LD/883 高性能，ECMOS 可编程逻辑电路PLD（普通用）LAT GAL20V8-10LPI 通用可编程逻辑电路LAT GAL20V8B-15LJI 高性能，ECMOS 可编程逻辑电路PLDLAT GAL22V10D-15LD/883 高性能，ECMOS 可编程逻辑电路PLDLAT GAL22V10D-10LPI 高性能，ECMOS 可编程逻辑电路PLDLAT GAL22V10D-15LJI 高性能，ECMOS 可编程逻辑电路PLDLAT ISPLSI1016-60LH/883 系统内高密度可编程逻辑电路PLDLAT ISPLSI1024-60LH/883 系统内高密度可编程逻辑电路PLDLAT ISPLSI1016E-80LJI 系统内高密度可编程逻辑电路PLDLAT ISPLSI1024-60LJI 系统内高密度可编程逻辑电路PLDLAT ISPLSI1032-60LG/883 系统内高密度可编程逻辑电路PLDLAT ISPLSI1032E-70LJI 系统内高密度可编程逻辑电路PLDLAT ISPLSI1048C-50LG/883 系统内高密度可编程逻辑电路PLDLAT ISPLSI2032-80LJINS DS26LS31MJ/883 高速，四重微分线路激励器NS DS26LS32MJ/883 四重微分线路激励器AMD AM26LS33/BEA RS-422/423串口，数字传输线路激励器PHL 26LS33/BEA 3-状态，四心线，线路激励器ALT EPF10K10TI144-4 内置可编程逻辑驱动器ALT EPM7032SLI44-7 可编程逻辑电路AGILEN 6N134/883 密封，高速，高CMR，逻辑门光耦合器HP 6N140A 密封，低中频，宽Vcc，高增益光耦合器AGILEN AT41435 低噪声，6GHz，双极硅晶体管AGILEN AT42070 功率高达6GHz，双极硅晶体管AGILEN AT64020 4GHz,双向硅晶体管，线性电源AGILEN ATF-34143BLK 低噪声，高电迁移率晶体管AGILEN HCPL3150 0.5A输出电流，IGBT门驱动器HP HCPL-5631 密封，高速，高CMR逻辑门光耦合器AGILEN HDSP7511 七节数字，发光二极管显示器AGILEN HDSP7513 七节数字，发光二极管显示器AGILEN MSA-0370 6V固定增益，10dbm通用型放大器AGILEN MSA-1110 6V固定增益，高动力测距放大器AMD AM25LS2519DC 四心线，双重3状态输出，变址浮点运算，寄存器AMD AM25S08DMB 十六进制，四心线，平行串口，D寄存器AMD AM25S09/BEA 四心线，2输出，高速寄存器AMD AM25S10/BEA 4-bit开关，3-状态移相器AMD AM25S10DCAMD AM25S18/BEA 四心线，D类型，3状态输出，变址浮点运算AMD AM27C010-120DI 1M, CMOS 电子可编程只读存储器（EPROM）AMD AM27C020-120DI 2M,CMOS 电子可编程只读存储器（EPROM) AMD AM27C040-90DI 4M,CMOS 电子可编程只读存储器（EPROM）AMD AM27C256-90DI 256K,CMOS EPROMAMD AM27C512-90DI 512K,CMOS EPROMAMD AM27C64-90DI 64K,CMOS EPROMAMD AM27S13/BEA 可编程只读存储器AMD AM27S15DC 可编程只读存储器AMD AM27S181DC 可编程只读存储器AMD AM27S191DC 可编程只读存储器AMD AM27S19DC 可编程只读存储器AMD AM27S21DC 可编程只读存储器AMD AM27S25DC 可编程只读存储器AMD AM27S281ADC 双极可编程只读存储器AMD AM27S291/BLA 可编程只读存储器AMD AM27S29/BRA 可编程只读存储器AMD AM27S29DC 可编程只读存储器AMD AM27S30DC 可编程只读存储器AMD AM27S35DC 可编程初始化输入双向可编程只读存储器AMD AM27S45ADC 可编程初始化输入双向可编程只读存储器AMD AM2855DMB 128-bit,四心线，移位寄存器AMD AM29000-25GC 3地址总线，微处理器AMD AM2901C-BQA 4-bit算术逻辑部件运算器AMD AM2901CDC 4-bit,双极微处理器AMD AM2902ADMB 进位发生器AMD AM2902ADC 高速进位发生器AMD AM2903ADC 4-bit,级联的微处理器AMD AM2909ADC 微程序系列发生器AMD AM2910ADCB 微程序系列发生器AMD AM29116DC 16-bit ,微处理器AMD AM2911ADC 可编微程序的微处理器AMD AM29130DC 8-bit套管移向器AMD AM2914DCB 优先级中断控制器AMD AM2917ADC 总线收发器AMD AM2922DC 8-输入，含控制寄存器的多路器AMD AM2925ADC 时序发生器和微周期长度控制的时钟脉冲电路AMD AM2925DCREI AM2946/BRA 总线收发器AMD AM2950DC I/O端口，8-bit,双向信号交换AMD AM29517DC 乘法器AMD AM2954DC 3状态，八进制寄存器AMD AM2961DC 4-bit,错误校正多路总线缓冲器AMD AM2964BDC 动态存储控制器AMD AM29705A/BXA 16-word,4-bit,随机存储器AMD AM29705ADCAMD AM2971DC 可编程发生器AMD AM29818ADC 流水线寄存器AMD AM29821DMB 10-bit,串行输入/输出，3-状态，正边缘触发，D-类型，相移寄存器AMD AM29826DC 八进制，变址浮点运算AMD AM29833A/BLA 总线收发器AMD AM29843DC 9-bit,D-类型，3-状态寄存器AMD AM29F400BT-55SI 电可擦除只读存储器AMD AM7910DC 调制解调器电路AMD AM79533IDC 用户电路接口电路AMD AM8177DC CRT阴极射线管，视频数据串行器AMD AM8151DC D/A转换器AMD AM9060CDC 非多用户地址，动态随机存取存储器AMD AM9122-35DC 静态存储器NS NMC27C16BQ-250 存储器INT TS80C186EB20 微处理器INT D80287-6 浮点处理器INT LD82289A 同步，多总线判定器INT LD8259A 中断信号处理器INT LD8086 微处理器INT LD8087-2 算术处理器TI SMJ27C128-20JM 131072-bit,UV可擦除的，可编程只读存储器INT MD27256-35B 可擦可编程只读存储器TI SMJ4416-15JDS 动态随机存取存储器INT MD2764-35BAMD MD8226B 总线收发器INT MD82288-10 总线控制器INT MD87C51FB/B 微控制器ATM AT89C52-24JI 8-bit,微控制器ATM AT28C64-15DM/883 平行串口EEPROMATM AT28C64-25DM/883ATM AT28C256-25DM/883 256K平行串口EEPROMATM ATV2500BQL-30DM/883 高速，高密度，UV可擦除可编程逻辑驱动器NS LM105H/883 基准电压运算放大器NS LM108AH/883 基准电压运算放大器NS LM108J/883 基准电压运算放大器NS LM110J 电压跟随器TI LM111JGB 单精度型，选通脉冲差动比较器ST LM117H 正极电压调整器NS LM120H-5V 串联的，3-终端，阴极板调整器ST LM123K 三总线，3A-5V,正电压调整器ST LM137H 负极电压调整器NS LM137H/883 3-终端，可调阴极板调整器ST LM137K 三总线负电压调整器TI LM148J 四心线，普通用，运算放大器NS LM148J/883 串联，四心线，741Op AmpNS LM1558H/883 双重运算放大器TI LM158JG 普通用，双重运算放大器NS LM160H 高速差动比较器TI LM193JG 四心线，普通用，差动比较器TI LM193JGBNS LM311J 电压比较器TI SA555P 精密定时器TI SE555JG 单精度定时器NS LM723J/883 稳压器F UA733DC 微分放大器NS LM741H/883 SPI/MICROWIRE数字温度传感器NS LM747H SPI/MICROWIRE数字温度传感器NS LM747H/883NS LF155H JFET输入运算放大器NS LF155H/883NS LF255H 双极，JFET运算放大器NS LF157H/883 运算放大器NS LF411MH/883 低补偿，低漂移，JFET输入运算放大器NS LF412MJ/883 低补偿，低漂移，双重JFET输入运算放大器MOT MC10107L 异或/非或门径系统MOT MC10505BEAJCMOT MC10507BEAJCMOT MC10525BEAJCMOT MC10531BEAJCMOT MC14174BAL 十六进制，D-类型，变址浮点运算MOT MC14403L2 脉冲编码调制，多媒体数字信号编解码器（PCM CODEC）MOT MC1403U 电压参考系统MOT MC145146P2 4-bit,数据总线输入，频率合成器，相位锁定回路MOT MC1503AU 电压参考系统TI MC1558JG 双重，普通用，运算放大器MOT MC1590G 双极，TV视频信号电路，TV音频接收电路MOT MC1651L 双重，A/D转换器MOT MC1658L 电压控制多频振荡器，相位锁定回路MOT MC1664L 四心线，2输入，“或”逻辑门MOT MC1668L 双重时钟寄存器MOT MC1670L RS-类型，变址浮点运算MOT MC1692L 四心线，含偏压驱动器的线路接收机MOT MC4344BCAJC 相频检波器MOT MC3419-1L 线路接口电路ACTEL A1020B-PG84M datasheetAMD AM685DL 双向电压比较器EDI EDI8L32512C15AI 512K*32 CMOS高速，静态存储器TI JBP18S030MJ 32*8，双极可编程只读存储器FROMTI JBP28L22MJ 256*8,双即可编程只读存储器FROMHAR ICL7650SMJD 超稳定-断路运算放大器HAR ICL8038AMJD 精密定波形发生器/压控振荡器NS DP8304BJ 双向总线驱动器HAR HI1-201-5HAR HA2-5033/883 250MHz 视频缓冲器HAR HFA3127MJ/883 超高频晶体管阵列HAR HFA3763IN 应用于正交调制的高整合度基带转换器PHL HEF4750VD 频率合成器PHL HEF4751VD 通用分频器HAR CA3100T 38MHz，运算放大器HAR CA3140AT 集高电压PMOS和双极晶体管优势于一体的运算放大器HAR CA3193AT 高稳定度，高精密度的运算放大器NS LH0033CG 快速和极端快速缓冲器LIN LT1001ACH 高精度运算放大器LIN LTC1562IG-2 低噪声，无失真，主动RC四心线通用滤波器IMS IMS1423P-25 高性能，CMOS静态存储器PMM8713PIMIC PIC16C65B-04IP 强大而易于编辑的CMOS，OTP-基准，8-bit微控制器TOS TC524258BZ-80 门控，硅CMOS，多通道，动态随机存取存储器DRAM ST T1616MJFAIR UA3045DMQBSIS T133G-883B(960.000KHZ) 振荡器SIS T133G-883B(5.120MHZ)SIS T133G-883B(1.000MHZ)FAIR UA9640DC/(26S10) 总线收发器MOT MRF314ASI MRF315A NPN RF电源硅晶体管MOT MRF323MOT MRF6414 RF电源NPN硅晶体管MOT MRF658PMI SMP10AY 放大器SD1524-04 微波电源晶体管，IFF,DME,TACANAD AD2S83AP 可互换的分辨率分解器和数字转换器DVSI AMBE1000 声音合成芯片DVSI AMBE2000 声音合成芯片TI TCM1520AP 振铃检波器。