SG7N06DP资料

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SG7N06P, SG7N06DPDiscrete IGBTs

SymbolTest ConditionsMaximum RatingsUnit

Continuous Transient±20±30VVGESVGEM

VGE=15V; TVJ=125oC; RG=22Clamped inductive load, L=300uHICM=14@ 0.8 VCESASSOA(RBSOA)

TJTJMTstg-55...+150150-55...+150oC

Weight4MdMounting torque, (TO-220) M3 M3.50.45/40.55/5Nm/Ib.in.

gVCESVCGRTJ=25oC to 150oCTJ=25oC to 150oC; RGE=1 M ; 600600VDim.

ABCDEFGHJKMNQRMilimeter Min. Max.12.70 13.9714.73 16.00 9.91 10.663.54 4.085.85 6.85 2.54 3.181.15 1.652.79 5.840.64 1.012.54 BSC4.32 4.821.14 1.390.35 0.562.29 2.79Inches Min. Max.0.500 0.5500.580 0.630 0.390 0.4200.139 0.1610.230 0.270 0.100 0.1250.045 0.0650.110 0.2300.025 0.040 0.100 BSC 0.170 0.1900.045 0.0550.014 0.0220.090 0.110Dimensions TO-220AB

G=Gate, C=Collector, E=EmitterE

GC

TC=25oC TC=90oCTC=25oC, 1 ms14730AIC25IC90ICM

PCTC=25oC

Maximum lead temperature for soldering1.6 mm (0.062 in.) from case for 10s300oC54W

SymbolTest ConditionsUnit

min.typ.max.

BVCESIC=250uA; VGE=0V600V

VGE(th)IC=250uA; VCE=VGE2.55.5V

ICESVCE=0.8VCES; TJ=25oC100

VGE=0V; TJ=125oC500

IGESVCE=0V; VGE=±20V±100nA

VCE(sat)IC=IC90; VGE=15V1.51.8VuACharacteristic Values(TJ=25oC, unless otherwise specified)SG7N06PSG7N06DP

SG7N06P, SG7N06DPDiscrete IGBTsSymbolTest ConditionsUnit

min.typ.max.

gtsIC=IC90; VCE=10V37S

Pulse test, t300us, duty cycle2%

Cies500

CoesVCE=25V; VGE=0V; f=1MHz50pF

Cres17

Qg25

QgeIC=IC90; VGE=15V; VCE=0.5VCES5nC

Qgc10

td(on)Inductive load, TJ=25oC9ns

triIC=IC90; VGE=15V; L=300uH10ns

EonVCE=0.8VCES; RG=Roff=220.07mJ

td(off)Remarks:Switching times may increase100200ns

tfifor VCE(Clamp)0.8VCES' higher TJ or150250ns

Eoffincreased RG0.30.6mJ

td(on)Inductive load, TJ=25oC10ns

triIC=IC90; VGE=15V; L=300uH15ns

EonVCE=0.8VCES; RG=Roff=220.07mJ

td(off)Remarks:Switching times may200ns

tfiincrease for VCE(Clamp)0.8VCES'250ns

Eoffhigher TJ or increased RG0.6mJ

RthJC2.3K/W

RthCK0.25K/W(TJ=25oC, unless otherwise specified)

Characteristic Values

Reverse Diode (FRED)

SymbolTest ConditionsUnit

min.typ.max.

VFIF=10A; TVJ=150oC1.96V

TVJ=25oC2.95

IRMVR=100V; IF=25A; -diF/dt=100A/usL 0.05uH; TVJ=100oC22.5A

trrIF=1A; -di/dt=50A/us; VR=30V; TJ=25oC35ns

RthJCDiode1.6K/WCharacteristic Values(TJ=25oC, unless otherwise specified)