SG7N06DP资料
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SG7N06P, SG7N06DPDiscrete IGBTs
SymbolTest ConditionsMaximum RatingsUnit
Continuous Transient±20±30VVGESVGEM
VGE=15V; TVJ=125oC; RG=22Clamped inductive load, L=300uHICM=14@ 0.8 VCESASSOA(RBSOA)
TJTJMTstg-55...+150150-55...+150oC
Weight4MdMounting torque, (TO-220) M3 M3.50.45/40.55/5Nm/Ib.in.
gVCESVCGRTJ=25oC to 150oCTJ=25oC to 150oC; RGE=1 M ; 600600VDim.
ABCDEFGHJKMNQRMilimeter Min. Max.12.70 13.9714.73 16.00 9.91 10.663.54 4.085.85 6.85 2.54 3.181.15 1.652.79 5.840.64 1.012.54 BSC4.32 4.821.14 1.390.35 0.562.29 2.79Inches Min. Max.0.500 0.5500.580 0.630 0.390 0.4200.139 0.1610.230 0.270 0.100 0.1250.045 0.0650.110 0.2300.025 0.040 0.100 BSC 0.170 0.1900.045 0.0550.014 0.0220.090 0.110Dimensions TO-220AB
G=Gate, C=Collector, E=EmitterE
GC
TC=25oC TC=90oCTC=25oC, 1 ms14730AIC25IC90ICM
PCTC=25oC
Maximum lead temperature for soldering1.6 mm (0.062 in.) from case for 10s300oC54W
SymbolTest ConditionsUnit
min.typ.max.
BVCESIC=250uA; VGE=0V600V
VGE(th)IC=250uA; VCE=VGE2.55.5V
ICESVCE=0.8VCES; TJ=25oC100
VGE=0V; TJ=125oC500
IGESVCE=0V; VGE=±20V±100nA
VCE(sat)IC=IC90; VGE=15V1.51.8VuACharacteristic Values(TJ=25oC, unless otherwise specified)SG7N06PSG7N06DP
SG7N06P, SG7N06DPDiscrete IGBTsSymbolTest ConditionsUnit
min.typ.max.
gtsIC=IC90; VCE=10V37S
Pulse test, t300us, duty cycle2%
Cies500
CoesVCE=25V; VGE=0V; f=1MHz50pF
Cres17
Qg25
QgeIC=IC90; VGE=15V; VCE=0.5VCES5nC
Qgc10
td(on)Inductive load, TJ=25oC9ns
triIC=IC90; VGE=15V; L=300uH10ns
EonVCE=0.8VCES; RG=Roff=220.07mJ
td(off)Remarks:Switching times may increase100200ns
tfifor VCE(Clamp)0.8VCES' higher TJ or150250ns
Eoffincreased RG0.30.6mJ
td(on)Inductive load, TJ=25oC10ns
triIC=IC90; VGE=15V; L=300uH15ns
EonVCE=0.8VCES; RG=Roff=220.07mJ
td(off)Remarks:Switching times may200ns
tfiincrease for VCE(Clamp)0.8VCES'250ns
Eoffhigher TJ or increased RG0.6mJ
RthJC2.3K/W
RthCK0.25K/W(TJ=25oC, unless otherwise specified)
Characteristic Values
Reverse Diode (FRED)
SymbolTest ConditionsUnit
min.typ.max.
VFIF=10A; TVJ=150oC1.96V
TVJ=25oC2.95
IRMVR=100V; IF=25A; -diF/dt=100A/usL 0.05uH; TVJ=100oC22.5A
trrIF=1A; -di/dt=50A/us; VR=30V; TJ=25oC35ns
RthJCDiode1.6K/WCharacteristic Values(TJ=25oC, unless otherwise specified)