IS64C1024AL-15TA3中文资料

Integrated Silicon Solution, Inc. — — 1-800-379-47741Rev. B 01/24/05ISSI®Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.IS61C1024AL IS64C1024AL128K x 8 HIGH-SPEED CMOS STATIC RAMDESCRIPTIONThe ISSI IS61C1024AL/IS64C1024AL is a very high-speed,low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI 's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE ) controls both writing and reading of the memory.The IS61C1024AL/IS64C1024AL is available in 32-pin 300-mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP (Type I, 8x20),and 32-pin sTSOP (Type I, 8 x 13.4) packages.FUNCTIONAL BLOCK DIAGRAMFEATURES•High-speed access time: 12, 15 ns •Low active power: 160 mW (typical)•Low standby power: 1000 µW (typical) CMOS standby•Output Enable (OE ) and two Chip Enable (CE1 and CE2) inputs for ease in applications •Fully static operation: no clock or refresh required•TTL compatible inputs and outputs •Single 5V (±10%) power supply•Commercial, industrial, and automotive tempera-ture ranges available •Lead free availableJANUARY 20052Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev. B 01/24/05IS61C1024AL, IS64C1024ALISSI®TRUTH TABLEModeWE CE1CE2OE I/O Operation V DD Current Not Selected X H X X High-Z I SB 1, I SB 2(Power-down)X X L X High-Z I SB 1, I SB 2Output Disabled H L H H High-Z I CC 1, I CC 2Read H L H L D OUT I CC 1, I CC 2WriteLLHXD INI CC 1, I CC 21234567891011121314151632313029282726252423222120191817NC A16A14A12A7A6A5A4A3A2A1A0I/O0I/O1I/O2GNDVDD A15CE2WE A13A8A9A11OE A10CE1I/O7I/O6I/O5I/O4I/O3PIN CONFIGURATION32-Pin SOJPIN DESCRIPTIONSA0-A16Address Inputs CE1Chip Enable 1 Input CE2Chip Enable 2 Input OE Output Enable Input WE Write Enable Input I/O0-I/O7Input/Output V DD Power GNDGroundOPERATING RANGE (IS64C1024AL)RangeAmbient Temperature V DDAutomotive-40°C to +125°C5V ± 10%1234567891011121314151632313029282726252423222120191817A11A9A8A13WE CE2A15VDD NC A16A14A12A7A6A5A4OE A10CE1I/O7I/O6I/O5I/O4I/O3GND I/O2I/O1I/O0A0A1A2A3PIN CONFIGURATION32-Pin TSOP (Type 1) (T) and sTSOP (Type 1) (H)OPERATING RANGE (IS61C1024AL)RangeAmbient Temperature V DDCommercial 0°C to +70°C 5V ± 10%Industrial-40°C to +85°C5V ± 10%IS61C1024AL, IS64C1024AL ISSI®ABSOLUTE MAXIMUM RATINGS(1)Symbol Parameter Value UnitV TERM Terminal Voltage with Respect to GND–0.5 to +7.0VT STG Storage Temperature–65 to +150°CP T Power Dissipation 1.5WI OUT DC Output Current (LOW)20mANotes:1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may causepermanent damage to the device. This is a stress rating only and functional operationof the device at these or any other conditions above those indicated in the opera-tional sections of this specification is not implied. Exposure to absolute maximumrating conditions for extended periods may affect reliability.CAPACITANCE(1,2)Symbol Parameter Conditions Max.UnitC IN Input Capacitance V IN = 0V5pFC OUT Output Capacitance V OUT = 0V7pFNotes:1.Tested initially and after any design or process changes that may affect these parameters.2.Test conditions: T A = 25°C, f = 1 MHz, V DD = 5.0V.DC ELECTRICAL CHARACTERISTICS (Over Operating Range)Symbol Parameter Test Conditions Min.Max.Unit V OH Output HIGH Voltage V DD = Min., I OH = –4.0 mA 2.4—V V OL Output LOW Voltage V DD = Min., I OL = 8.0 mA—0.4V V IH Input HIGH Voltage 2.2V DD + 0.5V V IL Input LOW Voltage(1)–0.30.8VI LI Input Leakage GND ≤ V IN≤ V DD Com.–11µAInd.–22Auto.–55I LO Output Leakage GND ≤ V OUT≤ V DD Com.–11µAOutputs Disabled Ind.–22Auto.–55 Note:1.V IL = –3.0V for pulse width less than 10 ns.Integrated Silicon Solution, Inc. — — 1-800-379-47743 Rev. B01/24/05IS61C1024AL, IS64C1024AL ISSI®IS61C1024AL/IS64C1024AL POWER SUPPLY CHARACTERISTICS(1)(Over Operating Range)-12 ns -15 nsSymbol Parameter Test Conditions Min.Max.Min.Max.UnitI CC1V DD Operating V DD = V DD MAX., CE1 = V IL Com.—35mASupply Current I OUT = 0 mA, f = 0Ind.—40Auto.—45I CC2V DD Dynamic Operating V DD = V DD MAX., CE1 = V IL Com.—45mASupply Current I OUT = 0 mA, f = f MAX Ind.—50Auto.—55typ.(2)—32I SB1TTL Standby Current V DD = V DD MAX.,Com.—1mA(TTL Inputs)V IN = V IH or V IL Ind.— 1.5CE1≥ V IH, f = 0 or Auto.—2CE2 ≤ V IL, f = 0I SB2CMOS Standby V DD = V DD MAX.,Com.—400µACurrent (CMOS Inputs)CE1≥ V DD – 0.2V,Ind.—450CE2 ≤ 0.2V Auto.—500V IN≥ V DD – 0.2V, or typ.(2)—200V IN≤ 0.2V, f = 0Note:1.At f = f MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.2. Typical Values are measured at V DD = 5V, T A = 25o C and not 100% tested.4Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev. B01/24/05Integrated Silicon Solution, Inc. — — 1-800-379-47745Rev. B 01/24/05IS61C1024AL, IS64C1024ALISSI®READ CYCLE SWITCHING CHARACTERISTICS (1) (Over Operating Range)-12-15SymbolParameter Min.Max.Min.Max.Unit t RC Read Cycle Time 12—15—ns t AA Address Access Time —12—15ns t OHA Output Hold Time 3—3—ns t ACE 1CE1 Access Time —12—15ns t ACE 2CE2 Access Time —12—15ns t DOE OE Access Time —6—7ns t LZOE (2)OE to Low-Z Output 0—0—ns t HZOE (2)OE to High-Z Output 0606ns t LZCE 1(2)CE1 to Low-Z Output 2—2—ns t LZCE 2(2)CE2 to Low-Z Output 2—2—ns t HZCE (2)CE1 or CE2 to High-Z Output 0708ns t PU (3)CE1 or CE2 to Power-Up 0—0—ns t PD (3)CE1 or CE2 to Power-Down—12—12nsNotes:1.Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1.2.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.3.Not 100% tested.AC TEST CONDITIONSParameterUnit Input Pulse Level0V to 3.0V Input Rise and Fall Times 3 ns Input and Output Timing 1.5V and Reference Level Output LoadSee Figures 1 and 2AC TEST LOADSFigure 1Figure 2IS61C1024AL, IS64C1024AL ISSI®AC WAVEFORMSREAD CYCLE NO. 1(1,2)(1,3)Notes:1.WE is HIGH for a Read Cycle.2.The device is continuously selected. OE, CE1 = V IL, CE2 = V IH.3.Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions.6Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev. B01/24/05Integrated Silicon Solution, Inc. — — 1-800-379-47747Rev. B 01/24/05IS61C1024AL, IS64C1024ALISSI®WRITE CYCLE SWITCHING CHARACTERISTICS (1,2) (Over Operating Range, Standard and Low Power)-12 ns-15 ns SymbolParameter Min.Max.Min.Max.Unit t WC Write Cycle Time 12—15—ns t SCE 1CE1 to Write End 10—12—ns t SCE 2CE2 to Write End10—12—ns t AW Address Setup Time to Write End 10—12—ns t HA Address Hold from Write End 0—0—ns t SA Address Setup Time 0—0—ns t PWE (3)WE Pulse Width 10—12—ns t SD Data Setup to Write End 7—10—ns t HD Data Hold from Write End 0—0—ns t HZWE (4)WE LOW to High-Z Output —7—7ns t LZWE (4)WE HIGH to Low-Z Output2—2—nsNotes:1.Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1.2.The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write.3.Tested with OE HIGH.4.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.8Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev. B 01/24/05IS61C1024AL, IS64C1024ALISSI®WRITE CYCLE NO. 2 (OE is HIGH During Write Cycle) (1,2)Notes:1.The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write.2.I/O will assume the High-Z state if OE = V IH .AC WAVEFORMS(1)IS61C1024AL, IS64C1024AL ISSI®WRITE CYCLE NO. 3(OE is LOW During Write Cycle) (1)Integrated Silicon Solution, Inc. — — 1-800-379-47749 Rev. B01/24/05IS61C1024AL, IS64C1024AL ISSI®DATA RETENTION SWITCHING CHARACTERISTICSSymbol Parameter Test Condition Min.Typ.(1)Max.Unit V DR V DD f or D ata R etention See D ata R etention W aveform 2.0 5.5VI D R Data R etention C urrent V DD = 2.0V, CE1≥V DD – 0.2V Com.—200400µAor CE2 ≤ 0.2V Ind.——450V IN≥ V DD – 0.2V, or V IN≤ V SS + 0.2V Auto.——500 t SDR Data R etention S etup T ime See D ata R etention W aveform0—ns t RDR Recovery Time See D ata R etention W aveform t RC—ns Note:1. Typical Values are measured at V DD = 5V, T A = 25o C and not 100% tested.DATA RETENTION WAVEFORM (CE1 Controlled)DATA RETENTION WAVEFORM (CE2 Controlled)10Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev. B01/24/05IS61C1024AL, IS64C1024AL ISSI®ORDERING INFORMATION: IS61C1024ALCommercial Range: 0°C to +70°CSpeed (ns)Order Part No.Package12IS61C1024AL-12J300-mil Plastic SOJIS61C1024AL-12T TSOP (Type I)ORDERING INFORMATION: IS61C1024ALIndustrial Range: –40°C to +85°CSpeed (ns)Order Part No.Package12IS61C1024AL-12JI300-mil Plastic SOJIS61C1024AL-12JLI300-mil Plastic SOJ, Lead-freeIS61C1024AL-12KI400-mil Plastic SOJIS61C1024AL-12KLI400-mil Plastic SOJ, Lead-freeIS61C1024AL-12HI sTSOP (Type I)IS61C1024AL-12TI TSOP (Type I)IS61C1024AL-12TLI TSOP (Type I), Lead-freeORDERING INFORMATION: IS64C1024ALAutomotive Range: –40°C to +125°CSpeed (ns)Order Part No.Package15IS64C1024AL-15KA3400-mil Plastic SOJIS64C1024AL-15TA3TSOP (Type I)Integrated Silicon Solution, Inc. — — 1-800-379-477411 Rev. B01/24/05Integrated Silicon Solution, Inc.PACKAGING INFORMATIONISSI®Plastic STSOP - 32 pins Package Code: H (Type I)PK13197H32 Rev. B 04/21/03PACKAGING INFORMATIONISSI®Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev.F 10/29/03Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any timewithout notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.400-mil Plastic SOJ Package Code: KPACKAGING INFORMATION ISSI®Millimeters Inches Millimeters Inches Millimeters InchesSymbol Min Max Min Max Min Max Min Max Min Max Min MaxNo. Leads (N)404244A 3.25 3.750.1280.148 3.25 3.750.1280.148 3.25 3.750.1280.148A10.64 —0.025 —0.64 —0.025 —0.64 —0.025 —A2 2.08 —0.082 — 2.08 —0.082 — 2.08 —0.082 —B0.380.510.0150.0200.380.510.0150.0200.380.510.0150.020b0.660.810.0260.0320.660.810.0260.0320.660.810.0260.032C0.180.330.0070.0130.180.330.0070.0130.180.330.0070.013D25.9126.16 1.020 1.03027.1827.43 1.070 1.08028.4528.70 1.120 1.130E11.0511.300.4350.44511.0511.300.4350.44511.0511.300.4350.445E110.0310.290.3950.40510.0310.290.3950.40510.0310.290.3950.405E2 9.40 BSC 0.370 BSC 9.40 BSC 0.370 BSC 9.40 BSC 0.370 BSCe 1.27 BSC 0.050 BSC 1.27 BSC 0.050 BSC 1.27 BSC 0.050 BSCCopyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.2Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev. F10/29/03PACKAGING INFORMATIONISSI®Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev.D 02/25/03without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.300-mil Plastic SOJ Package Code: JPACKAGING INFORMATIONISSI®2Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev. D 02/25/03MILLIMETERSINCHES Sym.Min.Typ.Max.Min.Typ.Max.N0.Leads 28A —— 3.56— —0.140A1 0.64——0.025 ——A2 2.41— 2.670.095—0.105b 0.41—0.510.016—0.020B 0.66—0.810.026—0.032C 0.20—0.250.008—0.010D 18.29—18.540.720—0.730E 8.26—8.760.325—0.345E17.49—7.75 0.295—0.305E2 6.27—7.290.247—0.287e1.27 BSC 0.050 BSC MILLIMETERS INCHES Sym.Min.Typ.Max.Min.Typ.Max.N0.Leads32A —— 3.56——0.140A1 0.64——0.025 ——A2 2.41— 2.670.095—0.105b 0.41—0.510.016—0.020B 0.66—0.810.026—0.032C 0.20—0.250.008—0.010D 20.83—21.080.820—0.830E 8.26—8.760.325—0.345E17.49—7.75 0.295—0.305E2 6.27—7.290.247—0.287e1.27 BSC 0.050 BSC300-mil Plastic SOJ Package Code: JPACKAGING INFORMATIONISSI®Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev.C 06/13/03Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.Plastic TSOP-Type IPackage Code: T (32-pin)。