NRLR473M16V20X25F中文资料

DDR2 SDRAMMT47H512M4 – 64 Meg x 4 x 8 banks MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banksFeatures•V DD = 1.8V ±0.1V, V DDQ = 1.8V ±0.1V•JEDEC-standard 1.8V I/O (SSTL_18-compatible)•Differential data strobe (DQS, DQS#) option•4n-bit prefetch architecture•Duplicate output strobe (RDQS) option for x8•DLL to align DQ and DQS transitions with CK •8 internal banks for concurrent operation •Programmable CAS latency (CL)•Posted CAS additive latency (AL)•WRITE latency = READ latency - 1 t CK •Programmable burst lengths: 4 or 8•Adjustable data-output drive strength•64ms, 8192-cycle refresh•On-die termination (ODT)•Industrial temperature (IT) option•RoHS-compliant•Supports JEDEC clock jitter specification Options1Marking •Configuration–512 Meg x 4 (64 Meg x 4 x 8 banks)512M4–256 Meg x 8 (32 Meg x 8 x 8 banks)256M8–128 Meg x 16 (16 Meg x 16 x 8 banks)128M16•FBGA package (Pb-free) – x16–84-ball FBGA (11.5mm x 14mm) Rev. A HG •FBGA package (Pb-free) – x4, x8–60-ball FBGA (11.5mm x 14mm) Rev. A HG •FBGA package (Pb-free) – x16–84-ball FBGA (9mm x 12.5mm) Rev. C RT •FBGA package (Pb-free) – x4, x8–60-ball FBGA (9mm x 11.5mm) Rev. C EB •FBGA package (Lead solder) – x16–84-ball FBGA (9mm x 12.5mm) Rev. C PK •Timing – cycle time– 1.875ns @ CL = 7 (DDR2-1066)-187E– 2.5ns @ CL = 5 (DDR2-800)-25E– 2.5ns @ CL = 6 (DDR2-800)-25– 3.0ns @ CL = 5 (DDR2-667)-3•Self refresh–Standard None •Operating temperature–Commercial (0°C ื T C ื +85°C)None–Industrial (–40°C ื T C ื +95°C;–40°C ื T A ื +85°C)IT •Revision:A/:CNote: 1.Not all options listed can be combined todefine an offered product. Use the PartCatalog Search on forproduct offerings and availability.2Gb: x4, x8, x16 DDR2 SDRAMFeaturesFunctional DescriptionThe DDR2 SDRAM uses a double data rate architecture to achieve high-speed opera-tion. The double data rate architecture is essentially a 4n -prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM effectively consists of a single 4n -bit-wide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n -bit-wide, one-half-clock-cycle data transfers at the I/O balls.A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. The x16 offering has two data strobes, one for the lower byte (LDQS, LDQS#) and one for the upper byte (UDQS,UDQS#).The DDR2 SDRAM operates from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. Com-mands (address and control signals) are registered at every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS as well as to both edges of CK.Read and write accesses to the DDR2 SDRAM are burst-oriented; accesses start at a se-lected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVATE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVATE command are used to select the bank and row to be accessed. The ad-dress bits registered coincident with the READ or WRITE command are used to select the bank and the starting column location for the burst access.The DDR2 SDRAM provides for programmable read or write burst lengths of four or eight locations. DDR2 SDRAM supports interrupting a burst read of eight with another read or a burst write of eight with another write. An auto precharge function may be en-abled to provide a self-timed row precharge that is initiated at the end of the burst ac-cess.As with standard DDR SDRAM, the pipelined, multibank architecture of DDR2 SDRAM enables concurrent operation, thereby providing high, effective bandwidth by hiding row precharge and activation time.A self refresh mode is provided, along with a power-saving, power-down mode.All inputs are compatible with the JEDEC standard for SSTL_18. All full drive-strength outputs are SSTL_18-compatible.Industrial TemperatureThe industrial temperature (IT) option, if offered, has two simultaneous requirements:ambient temperature surrounding the device cannot be less than –40°C or greater than 85°C, and the case temperature cannot be less than –40°C or greater than 95°C. JEDEC specifications require the refresh rate to double when T C exceeds 85°C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance, input/output impedance and I DD values must be derated when T C is < 0°C or > 85°C.2Gb: x4, x8, x16 DDR2 SDRAM Functional Description。

nRF24L01+单片机2.4 GHz收发器产品说明书v1.0主要功能：全球通用的2.4 GHz ISM波段操作250kbps, 1Mbps and 2Mbps空中数据传输速率超低功率运行发射功率为0dBm（1.0mW）时，发射电流为11.3mA2Mbps空中数据传输速率，接收电流为13.5mA掉电电流为900nA待机-I电流26μA片内电压调整器1.9至3.6V电源供电范围增强型ShockBurst TM自动数据包处理自动包数据包事务处理6数据通道的MultiCeiver TM与nRF24L01嵌入式兼容空中数据速率250kbps 和1Mbps，与nRF2401A，nRF2402, nRF24E1和nRF24E2兼容低BOM成本±60ppm 16MHz晶振容许5V输入紧凑的20引脚4x4mm QFN封装应用无线 PC外围设备鼠标,键盘和遥控器三和一桌面捆绑先进的媒体中心遥控器网络电话耳机游戏控制器蓝牙模块运动手表和传感器消费电子产品射频遥控器家庭和商业自动化超低功率无线传感器网络RFID 射频识别资产跟踪系统玩具免责条款北欧半导体ASA有权做出随时更改,提高产品可靠性、功能或设计,不另行通知。

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维　修　手　册00ZARM205/A2C 数码复合机MODEL AR-M160 AR-M205目 录［１］　概 要［２］　规 格［３］　消耗品［４］　外观和内部结构［５］　开箱和安装［６］　调 整［７］　模拟代码［８］　用户程序［９］　故障代码［１０］　维修保养［１１］　分解组装［１２］　电路部分1 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 110 - 111 - 112 - 1为确保安全性、可靠性，更换部品务必使用正规品。

指定的部品。

本手册仅供维修人员进行售后服务用，SHARP CORPORATION目录[ 1 ] 概 要1. 维修注意事项.....................................................1 - 1[ 2 ] 规 格1. 复印模式............................................................2 - 1[ 3 ] 消耗品1. 消耗品供应表.....................................................3 - 12. 使用环境............................................................3 - 1[ 4 ] 外观和内部结构1. 外　观................................................................4 - 12. 内部结构............................................................4 - 23. 操作面板............................................................4 - 34. 电机，电磁铁，离合器.......................................4 - 45. 传感器，开关.....................................................4 - 56. 电路板组件.........................................................4 - 67. 剖面图................................................................4 - 7[ 5 ] 开箱和安装1. 安装条件............................................................5 - 12. 去除保护材料和固定螺钉...................................5 - 13. 安装步骤............................................................5 - 14. 固定螺钉的卸除和保存.......................................5 - 35. 纸盒纸张尺寸设置..............................................5 - 3[ 6 ] 调　整1. 调整项目表.........................................................6 - 12. 复印机调整.........................................................6 - 1[ 7 ] 模拟代码1. 进入模拟代码.....................................................7 - 12. 解除模拟代码.....................................................7 - 13. 模拟代码列表.....................................................7 - 14. 模拟代码详细内容..............................................7 - 3[ 8 ] 用户程序1. 用户程序列表......................................................8 - 12. 设置用户程序......................................................8 - 43. 墨粉盒使用寿命..................................................8 - 4[ 9 ] 模拟代码表1. 故障代码表.........................................................9 - 12. 故障代码具体说明..............................................9 - 1[ 10 ] 维修保养1. 维修保养明细表................................................10 - 12. 维修保养显示系统............................................10 - 23. 更换消耗品部件注意事项..................................10 - 2[ 11 ] 分解和组装1. 高压部分/双面输送部分....................................11 - 12. 光学部分...........................................................11 - 23. 定影部分...........................................................11 - 44. 出纸部分...........................................................11 - 65. MCU部件..........................................................11 - 86. 光学结构组件....................................................11 - 87. LSU组件...........................................................11 - 88. 纸盒进纸部分/纸张传输部分.............................11 - 99. 手送进纸部分..................................................11 - 1010. 电源部分.......................................................11 - 1211. 显影部分.......................................................11 - 1312. 成像部分.......................................................11 - 1413. 其他..............................................................11 - 15[ 12 ] 电路部分1. 结构框图...........................................................12 - 12. 电路说明...........................................................12 - 23. 实际线路图.......................................................12 - 5[ 1 ] 概　要1. 维修注意事项指示图:机器的定影区域带有 () 标签的地方意思如下: : 小心，有危险。

Interleaved Die (Multi-LUN) OperationsIn devices that have more than one die (LUN) per target, it is possible to improve per-formance by interleaving operations between the die (LUNs). An interleaved die (multi-LUN) operation is one that individual die (LUNs) involved may be in any combination of busy or ready status during operations.Interleaved die (multi-LUN) operations are prohibited following RESET (FFh, FCh),identification (90h, ECh, EDh), and configuration (EEh, EFh) operations until ARDY =1for all of the die (LUNs) on the target.During an interleaved die (multi-LUN) operation, there are two methods to determine operation completion. The R/B# signal indicates when all of the die (LUNs) have finish-ed their operations. R/B# remains LOW while any die (LUN) is busy. When R/B# goes HIGH, all of the die (LUNs) are idle and the operations are complete. Alternatively, the READ STATUS ENHANCED (78h) command can report the status of each die (LUN) in-dividually.If a die (LUN) is performing a cache operation, like PROGRAM PAGE CACHE (80h-15h),then the die (LUN) is able to accept the data for another cache operation when status register bit 6 is 1. All operations, including cache operations, are complete on a die when status register bit 5 is 1.Use the READ STATUS ENHANCED (78h) command to monitor status for the addressed die (LUN). When multi-plane commands are used with interleaved die (multi-LUN) op-erations, the multi-plane commands must also meet the requirements, see Multi-Plane Operations for details. After the READ STATUS ENHANCED (78h) command has been issued, the READ STATUS (70h) command may be issued for the previously addressed die (LUN).See Command Definitions for the list of commands that can be issued while other die (LUNs) are busy.During an interleaved die (multi-LUN) operation that involves a PROGRAM-series (80h-10h, 80h-15h, 80h-11h) operation and a READ operation, the PROGRAM-series operation must be issued before the READ-series operation. The data from the READ-series operation must be output to the host before the next PROGRAM-series operation is issued. This is because the 80h command clears the cache register contents of all cache registers on all planes.When issuing combinations of commands to multiple die (LUNs) (e.g. Reads to one die (LUN) and Programs to another die (LUN)) or Reads to one die (LUN) and Reads to an-other die (LUN)), the host shall issue the READ STATUS ENHANCED (78h) command before reading data from any LUN. This ensures that only the LUN selected by theREAD STATUS ENHANCED (78h) command responds to a data output cycle after being put into data output mode, and thus avoiding bus contention. After the READ STATUS ENHANCED (78h) command is issued to the selected die (LUN) a CHANGE READ COL-UMN (05h-E0h) or CHANGE READ COLUMN ENHANCED (06h-E0h) command shall be issued prior to any data output from the selected die (LUN).32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Interleaved Die (Multi-LUN) OperationsIf the SYNCHRONOUS RESET (FCh) command is issued while in the OTP operation mode, the target will exit OTP operation mode and the synchronous interface remains active.Table 15: OTP Area DetailsPROGRAM OTP PAGE (80h-10h)The PROGRAM OTP PAGE (80h-10h) command is used to write data to the pages within the OTP area. To program data in the OTP area, the target must be in OTP operation mode.To use the PROGRAM OTP PAGE (80h-10h) command, issue the 80h command. Issue five address cycles including the column address, the page address within the OTP page range, and a block address of 0. Next, write the data to the cache register using data in-put cycles. After data input is complete, issue the 10h command.R/B# goes LOW for the duration of the array programming time, t PROG. The READ STA-TUS (70h) command is the only valid command for reading status in OTP operation mode. The RDY bit of the status register will reflect the state of R/B#. Use of the READ STATUS ENHANCED (78h) command is prohibited.When the target is ready, read the FAIL bit of the status register to determine whether the operation passed or failed (see Status Operations).The PROGRAM OTP PAGE (80h-10h) command also accepts the CHANGE WRITE COL-UMN (85h) command during data input.If a PROGRAM PAGE command is issued to the OTP area after the area has been protec-ted, then R/B# goes LOW for t OBSY. After t OBSY, the status register is set to 60h.Figure 72: PROGRAM OTP PAGE (80h-10h) OperationDQ[7:0]R/B#32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND One-Time Programmable (OTP) OperationsTable 20: Output Drive Strength Impedance Values (V CCQ = 2.7–3.6V) (Contin-ued)Table 21: Pull-Up and Pull-Down Output Impedance MismatchNotes: 1.Mismatch is the absolute value between pull-up and pull-down impedances. Both aremeasured at the same temperature and voltage.2.Test conditions: V CCQ = V CCQ (MIN), V OUT = V CCQ × 0.5, T A = T OPER .32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Output Drive Impedance。