2N5962资料
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2N5962/ MMBT5962
Discrete POWER & SignalTechnologies
NPN General Purpose Amplifier
This device is designed for use as low noise, high gain, generalpurpose amplifiers requiring collector currents to 50 mA.Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise notedSymbolParameterValueUnits
VCEOCollector-Emitter Voltage45V
VCBOCollector-Base Voltage45VVEBOEmitter-Base Voltage8.0V
ICCollector Current - Continuous100mA
TJ, TstgOperating and Storage Junction Temperature Range-55 to +150°C
SymbolCharacteristicMaxUnits
2N5962*MMBT5962PDTotal Device DissipationDerate above 25°C6255.03502.8mWmW/°CRθJCThermal Resistance, Junction to Case83.3°C/WRθJAThermal Resistance, Junction to Ambient200357°C/WC
BE
SOT-23Mark: 117MMBT59622N5962
CBETO-92
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
© 1997 Fairchild Semiconductor Corporation元器件交易网www.cecb2b.com2N5962/ MMBT5962NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICSSymbolParameterTest ConditionsMinMaxUnits
V(BR)CEOCollector-Emitter Breakdown Voltage*IC = 5.0 mA, IB = 045V
V(BR)CBOCollector-Base Breakdown VoltageIC = 10 µA, IE = 045VV(BR)EBOEmitter-Base Breakdown VoltageIE = 10 µA, IC = 08.0V
ICBOCollector Cutoff CurrentVCB = 30 V, IE = 0VCB = 30 V, IE = 0, TA = 65 °C2.050nAnAIEBOEmitter Cutoff CurrentVEB = 5.0 V, IC = 01.0nA
ON CHARACTERISTICS*
hFEDC Current GainVCE = 5.0 V, IC = 10 µAVCE = 5.0 V, IC = 100 µAVCE = 5.0 V, IC = 1.0 mAVCE = 5.0 V, IC = 10 mA4505005506001400VCE(sat)Collector-Emitter Saturation VoltageIC = 10 mA, IB = 0.5 mA0.2V
VBE(on)Base-Emitter On VoltageVCE = 5.0 V, IC = 1.0 mA0.50.7V
SMALL SIGNAL CHARACTERISTICS
CcbCollector-Base CapacitanceVCB = 5.0 V4.0pF
CebEmitter-Base CapacitanceVEB = 0.5 V6.0pF
hfeSmall-Signal Current GainIC = 10 mA, VCE = 5.0 V,f = 1.0 kHzIC = 10 mA, VCE = 5.0 V,f = 100 MHz600
1.0200
NFNoise FigureVCE = 5.0 V, IC = 10 µA,RS = 10 kΩ, f = 1.0 kHz,BW = 400 HzVCE = 5.0 V, IC = 100 µA,RS = 1.0 kΩ, f = 1.0 kHz,BW = 400 HzVCE = 5.0 V, IC = 100 µA,RS = 10 kΩ, f = 1.0 kHz,BW = 400 HzVCE = 5.0 V, IC = 100 µA,RS = 100 kΩ, f = 1.0 kHz,BW = 400 HzVCE = 5.0 V, IC = 10 µA,RS = 10 kΩ, f = 10 Hz -10 kHzBW = 15.7 kHz3.0
6.0
4.0
8.0
3.0dB
dB
dB
dB
dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%元器件交易网www.cecb2b.com
