2N6162资料

1.Product profile

1.1General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.

1.2Features and benefits

Suitable for logic level gate drive sources

Very fast switchingSurface-mounted package

Trench MOSFET technology

1.3Applications

Logic level translatorsHigh-speed line drivers

1.4Quick reference data

2.Pinning information2N7002

60 V, 300 mA N-channel Trench MOSFET

Rev. 7 — 8 September 2011

Product data sheetSOT23

Table 1.Quick reference dataSymbolParameterConditionsMinTypMaxUnit

VDSdrain-source voltage25°C≤Tj≤150°C--60V

IDdrain currentVGS=10V; Tsp=25°C;seeFigure 1; see Figure 3--300mA

Ptottotal power dissipationTsp=25°C;seeFigure 2--0.83WStatic characteristics

RDSondrain-source on-state resistanceVGS=10V; ID=500mA; Tj=25°C; see Figure 6; see Figure 8-2.85Ω

Prelim. 9/992N7000

Semelab plc.Telephone +44(0)1455 556565. Fax +44(0)1455 552612.E-mail: sales@Website:

N–CHANNELENHANCEMENT MODEMOS TRANSISTORFEATURES• V(BR)DSS= 60V• RDS(ON)= 5W• ID= 1AV

DSDrain – Source VoltageV

GSGate – Source VoltageIDDrain CurrentIDMPulsed Drain Current PDPower Dissipation@ TCASE= 25°CDerate above 25°CTj,TstgOperating and Storage Temperature RangeTLMaximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds60V±40V200mA500mA400mW3.2mW/°C–55 to 150°C300°CMECHANICAL DATADimensions in mm (inches)

ABSOLUTE MAXIMUM RATINGS (TCASE= 25°C unlessotherwise stated)TO92 PACKAGEPIN 1 – DrainPIN 2 – Gate PIN 3 – Drain元器件交易网

THERMAL CHARACTERISTICMin.Typ.Max.UnitRqJAThermal Resistance, Junction to Ambient312.5°C/WV(BR)DSSGate – Source Breakdown VoltageVGS(th)Gate Threshold VoltageIGSSGate – Body Leakage Current ForwardIDSSZero Gate Voltage Drain CurrentID(on)*On–State Drain CurrentRDS(on)*Drain – Source On ResistanceVDS(on)*Drain – Source On VoltagegFS*Forward TransconductanceCissInput CapacitanceCossOutput CapacitanceCrssReverse Transfer CapacitancetONTurn–On TimetOFFTurn–Off Time

MSC1056.PDF 05-19-99

2N3584ABSOLUTE MAXIMUM RATINGS:SYMBOLCHARACTERISTICVALUEUNITSVCBO*Collector-Base Voltage375VoltsVCEO*Collector-Emitter Voltage250VoltsVCER*Collector-Emitter Voltage RBE = 50Ω300VoltsVEBO*Emitter-Base Voltage6VoltsIC*Peak Collector Current5AmpsIC*Continuous Collector Current2AmpsIB*Base Current1AmpsTSTG*

Storage Temperature-65 to 200°CTJ*Operating Junction Temperature-65 to 200°C*Lead Temperature 1/16" from Case for 10 Sec.235°

CPT*

θ JCPower DissipationTC = 25°CThermal Impedance355.0Watts°C/W5 Amp, 375V,High VoltageNPN Silicon PowerTransistors

TO-66APPLICATIONS:

• Off-Line Inverters• Deflection Circuits• Switching Regulators• DC-DC Converters• Motor Controls• High Voltage Amplifiers7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-7813

DESCRIPTION:These power transistors are produced by PPC's DOUBLEDIFFUSED PLANAR process. This technology produces highvoltage devices with excellent switching speeds, frequencyresponse, gain linearity, saturation voltages, high current gain,and safe operating areas. They are intended for use inCommercial, Industrial, and Military power switching, amplifier,and regulator applications.

2N58842N5886

COMPLEMENTARY SILICON

HIGH POWER TRANSISTORS

sSGS-THOMSON PREFERRED SALESTYPES

sCOMPLEMENTARY PNP - NPN DEVICES

sHIGH CURRENT CAPABILITY

APPLICATIONS

sGENERAL PURPOSE SWITCHING ANDAMPLIFIER

sLINEAR AND SWITCHING INDUSTRIALEQUIPMENT

DESCRIPTION

The 2N5884 and 2N5886 are complementary

silicon power transistor in Jedec TO-3 metal case

inteded for use in power linear amplifiers and

switching applications.INTERNAL SCHEMATIC DIAGRAM

June 1997 12

TO-3

ABSOLUTE MAXIMUM RATINGS

SymbolParameterValueUnit

PNP2N5884

NPN2N5886

VCBOCollector-Base Voltage (IE = 0)80V

VCEOCollector-Emitter Voltage (IB = 0)80V

VEBOEmitter-Base Voltage (IC = 0)5V

ICCollector Current25A

ICMCollector Peak Current50A

IBBase Current7.5A

PtotTotal Dissipation at Tc ≤ 25 oC200W

TstgStorage Temperature-65 to 200oC

TjMax. Operating Junction Temperature200oC