ALD1105SBL;ALD1105PBL;中文规格书,Datasheet资料

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ALD1105A DVANCED L INEARD EVICES, I NC.DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTIONThe ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. It consists of an ALD1116 N-channel MOSFET pair and an ALD1117 P-channel MOSFET pair in one package. The ALD1105is a low drain current, low leakage current version of the ALD1103.The ALD1105 offers high input impedance and negative current temperature coefficient. The transistor pair is matched for minimum offset voltage and differential thermal response, and it is designed for precision signal switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment.When used in complementary pairs, a dual CMOS analog switch can be constructed. In addition, the ALD1105 is intended as a building block for differential amplifier input stages, transmission gates, and multiplexer applications.The ALD1105 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources.The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate.The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature. For example, DC beta of the device at a drain current of 3mA at 25°C is = 3mA/30pA = 100,000,000.FEATURES•Thermal tracking between N-channel and P-channel pairs •Low threshold voltage of 0.7V for both N-channel &P-channel MOSFETS •Low input capacitance •Low Vos -- 10mV•High input impedance -- 1013Ω typical •Low input and output leakage currents•Negative current (I DS ) temperature coefficient •Enhancement mode (normally off)•DC current gain 109•Matched N-channel and matched P-channel in one package •RoHS compliantPIN CONFIGURATIONAPPLICATIONS •Precision current mirrors•Complementary push-pull linear drives •Analog switches •Choppers•Differential amplifier input stage •Voltage comparator •Data converters •Sample and Hold •Analog inverter•Precision matched current sourcesDN2GN2SN2GP2SP2GN1SN1DP1GP11234567891011121314DN1V +V -DP2SP1BLOCK DIAGRAMN SOURCE 1 (3)SUBSTRATE (4)N SOURCE 2 (12)N GATE 2 (13)N DRAIN 1 (1) N GATE 1 (2)N DRAIN 2 (14) P SOURCE 1 (7)SUBSTRATE (11)P SOURCE 2 (8)P GATE 2 (9)P DRAIN 1 (5)P GATE 1 (6)P DRAIN 2 (10)TOP VIEWSBL, PBL, DB PACKAGESOperating Temperature Range*0°C to +70°C 0°C to +70°C -55°C to +125°C 14-Pin14-Pin 14-Pin Small Outline Plastic Dip CERDIP Package (SOIC)Package Package ALD1105SBLALD1105PBLALD1105DBORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))* Contact factory for leaded (non-RoHS) or high temperature versions.ABSOLUTE MAXIMUM RATINGSDrain-source voltage, V DS 10.6V Gate-source voltage, V GS 10.6V Power dissipation 500mW Operating temperature range SBL, PBL packages 0°C to +70°CDB package-55°C to +125°C Storage temperature range-65°C to +150°C Lead temperature, 10 seconds +260°C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.OPERATING ELECTRICAL CHARACTERISTICST A= 25°C unless otherwise specifiedN - Channel Test P - Channel TestParameter Symbol Min Typ Max Unit Conditions Min Typ Max Unit ConditionsGate Threshold V T0.40.7 1.0V I DS = 1µA V GS = V DS-0.4-0.7-1.0V I DS = -1µA V GS = V DS VoltageOffset Voltage V OS210mV I DS = 10µA V GS = V DS210mV I DS = -10µA V GS = V DS V GS1 - V GS2Gate ThresholdTemperature TC VT-1.2mV/°C-1.3mV/°CDriftOn Drain I DS (ON)3 4.8mA V GS = V DS = 5V-1.3-2mA V GS = V DS = -5V CurrentTrans-.G fs1 1.8mmho V DS = 5V I DS= 10mA0.250.67mmho V DS = -5V I DS= -10mA conductanceMismatch∆G fs0.5%0.5%Output G OS200µmho V DS = 5V I DS = 10mA40µmho V DS = -5V I DS = -10mA ConductanceDrain Source R DS(ON)350500ΩV DS = 0.1V V GS = 5V12001800ΩV DS = -0.1V V GS = -5V ON ResistanceDrain SourceON Resistance∆R DS(ON)0.5%V DS = 0.1V V GS = 5V0.5%V DS = -0.1V V GS = -5V MismatchDrain SourceBreakdown BV DSS12V I DS = 1µA V GS =0V-12V I DS = -1µA V GS =0V VoltageOff Drain I DS(OFF)10400pA V DS =12V I GS = 0V10400pA V DS = -12V V GS = 0V Current4nA T A = 125°C4nA T A = 125°CGate Leakage I GSS0.130pA V DS = 0V V GS =12V130pA V DS = 0V V GS =-12V Current1nA T A = 125°C1nA T A = 125°CInput C ISS13pF13pFCapacitanceOUTPUT CHARACTERISTICSDRAIN SOURCE VOLTAGE (V)D R A I N S O U R CE C U R R E N T (m A )-10-7.5-5.0-2.5-8-2-6-4-10-12LOW VOLTAGE OUTPUTCHARACTERISTICSDRAIN SOURCE VOLTAGE (mV)D R A I N S O U R CE C U R R E N T (µA )-320-160160320-500500250-250-12FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGEDRAIN SOURCE VOLTAGE (V)-8-2-6-4-10F O R W A R D T R A N S C O N D U C T A N C E (m m h o ) 1.00.50.20.10.050.020.01TRANSFER CHARACTERISTIC WITH SUBSTRATE BIASGATE SOURCE VOLTAGE (V)-0.8-1.6-2.4-3.2-4.0-20-15-10-50D R A I N S O U R C E C U R R E N T (µA )GATE SOURCE VOLTAGE (V)DRAIN SOURCE ON RESISTANCE R DS (ON) vs. GATE SOURCE VOLTAGED R A I N S O U R CE O N R E S I S T A N C E (K Ω)1001010.1-2-4-6-8-10-12OFF DRAIN CURRENT vs. AMBIENT TEMPERATUREAMBIENT TEMPERATURE (°C)O F F D R A I N S O U R C E C U R R E N T (p A )-50-25+25+50+75+125+10001 101001000OUTPUT CHARACTERISTICSD R A I N S O U R CE C U R R E N T (m A )20151005DRAIN SOURCE VOLTAGE (V)24681012LOW VOLTAGE OUTPUTCHARACTERISTICSDRAIN SOURCE VOLTAGE (mV)D R A I N S O U R C E C U R R E N T (µA )-160-80080160-10001000500-500F O R W A R D T R A N S C O N D U C T A N C E (m m h o )FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGEDRAIN SOURCE VOLTAGE (V)2010210.550.224681012GATE SOURCE VOLTAGE (V)TRANSFER CHARACTERISTICWITH SUBSTRATE BIASD R A I N S O U R CE C U R R E N T (µA )2015105000.81.62.43.24.0GATE SOURCE VOLTAGE (V)DRAIN SOURCE ON RESISTANCE R DS (ON) vs. GATE SOURCE VOLTAGED R A I N SO U R C E O N R E S I S T A N C E (K Ω)1001010.124681012OFF DRAIN CURRENT vs. AMBIENT TEMPERATUREAMBIENT TEMPERATURE (°C)O F F D R A I N S O U R C E C U R R E N T (p A )-50-25+25+50+75+125+10001 101001000TYPICAL APPLICATIONSDIFFERENTIAL AMPLIFIERCURRENT SOURCE MULTIPLICATIONCURRENT SOURCE MIRRORCURRENT SOURCE WITH GATE CONTROLIQ 1, Q 2: N - Channel MOSFET Q 3, Q 4: P - Channel MOSFET= 4R SETONOFFQ 3,Q4 : P - Channel MOSFETOUT IN -V IN +Q 1, Q 2: N - Channel MOSFET Q 3, Q 4: P - Channel MOSFETQ SET, Q 1..Q N : ALD 1106 or ALD 1105 N - Channel MOSFETI SET = I SET x NQCASCODE CURRENT SOURCESBASIC CURRENT SOURCESP-CHANNEL CURRENT SOURCEN-CHANNEL CURRENT SOURCETYPICAL APPLICATIONS (cont.)I+I SOURCE = I SET =V + - Vt R SET =V + - 1.0R SETV + = +5VI Q 1, Q 2 : N - Channel MOSFETQ 3, Q 4: P - Channel MOSFET~= 4R SET ~+I Q 1, Q 2, Q 3, Q 4: N - Channel MOSFET (1/2 ALD1105 + ALD1116) Q1, Q2, Q3, Q4: P - Channel MOSFET (1/2 ALD1105 + ALD1117)I SOURCE = I SET =V + - 2VtR SET=3 R SET~Millimeters InchesMin Max Min Max DimAA1bCD-14EeHLS1.750.250.450.258.754.056.300.9378°0.500.0530.0040.0140.0070.3360.1400.2240.0240°0.0100.0690.0100.0180.0100.3450.1600.2480.0378°0.0201.27 BSC0.050 BSC1.350.100.350.188.553.505.700.600°0.25ø14 Pin Plastic SOIC PackageES (45°)14 Pin Plastic DIP Package1MillimetersInchesMin Max Min Max Dim A A 1A 2b b 1c D-14EE 1e e 1LS-14ø3.810.381.270.890.380.2017.275.597.622.297.372.791.020°5.081.272.031.650.510.3019.307.118.262.797.873.812.0315°0.1050.0150.0500.0350.0150.0080.6800.2200.3000.0900.2900.1100.0400°0.2000.0500.0800.0650.0200.0120.7600.2800.3250.1100.3100.1500.08015°CAA1bb1CD-14EE1ee1LL1L2SØ3.551.270.970.360.20--5.597.733.813.180.38--0°5.082.161.650.580.3819.947.878.265.08--1.782.4915°Millimeters InchesMin Max Min Max Dim0.1400.0500.0380.0140.008--0.2200.2900.1500.1250.015--0°0.2000.0850.0650.0230.0150.7850.3100.3250.200--0.0700.09815°2.54 BSC7.62 BSC0.100 BSC0.300 BSC14 Pin CERDIP PackageCERDIP-14 PACKAGE DRAWING分销商库存信息:ALDALD1105SBL ALD1105PBL。