k2607

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)2SK2607Chopper Regulator, DC−DC Converter and Moter DriveApplicationsLow drain−source ON resistance : R DS(ON) = 1.0 Ω (typ.)High forward transfer admittance : |Y fs|= 7.0 S (typ.)Low leakage current : I DSS = 100 µA (max) (V DS = 640 V)Enhancement mode : V th = 2.0~4.0 V (V DS = 10 V, I D = 1 mA)Maximum Ratings (Ta = 25°C)Characteristics SymbolRatingUnit Drain−source voltage V DSS 800 VDrain−gate voltage (R GS = 20 kΩ) V DGR 800 VGate−source voltage V GSS ±30 VDC (Note 1) I D 9Drain currentPulse (Note 1) I DP 27ADrain power dissipation (Tc = 25°C) P D 150 WSingle pulse avalanche energy(Note2)E AS 778 mJAvalanche current I AR 9 ARepetitive avalanche energy (Note 3) E AR 15 mJChannel temperature T ch 150 °CStorage temperature range T stg−55~150 °CThermal CharacteristicsCharacteristic SymbolMaxUnit Thermal resistance, channel to case R th (ch−c) 0.883 °C/WThermal resistance, channel to ambient R th (ch−a) 50 °C/WNote 1: Ensure that the channel temperature does not exceed 150°C.Note 2: V DD = 90 V, T ch = 25°C (initial), L = 17.4 mH, R G = 25 Ω, I AR = 9 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device.Please handle with caution.Unit: mm1. GATE2. DRAIN (HEAT SINK)3. SOURCEJEDEC ―JEITA SC-65 TOSHIBA 2-16C1B Weight: 4.6 g (typ.)Electrical Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max Unit Gate leakage currentI GSS V GS = ±30 V, V DS = 0 V — — ±10 µA Gate −source breakdown voltage V (BR) GSS I G = ±10 µA, V DS = 0 V ±30 — — V Drain cut −off currentI DSS V DS = 640 V, V GS = 0 V — — 100 µA Drain −source breakdown voltage V (BR) DSS I D = 10 mA, V GS = 0 V 800 — — V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 2.0 — 4.0 V Drain −source ON resistance R DS (ON)V GS = 10 V, I D = 4 A,— 1.0 1.2 ΩForward transfer admittance |Y fs | V DS = 15 V, I D = 4 A3.07.0—SInput capacitanceC iss — 2160 —Reverse transfer capacitance C rss — 45 — Output capacitanceC ossV DS = 25 V, V GS = 0 V, f = 1 MHz — 200 —pF Rise timet r — 25 —Turn −on timet on — 60 —Fall timet f — 25 —Switching timeTurn −off timet off— 110 —nsTotal gate charge (gate −sourceplus gate −drain) Q g —68 — Gate −source charge Q gs — 38 — Gate −drain (“miller”) ChargeQ gdV DD ≈ 400 V, V GS = 10 V, I D = 9 A— 30 —nCSource −Drain Ratings and Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max UnitContinuous drain reverse current(Note 1) I DR —— — 9 A Pulse drain reverse current(Note 1) I DRP — — — 27 AForward voltage (diode) V DSF I DR = 9 A, V GS = 0 V——−1.9 VReverse recovery time t rr — 1000 — ns Reverse recovery chargeQ rrI DR = 9 A, V GS = 0 V, dI DR / dt = 100 A / µs— 12 — µCMarkinglead (Pb)-free package or lead (Pb)-free finish.⎟⎠⎞⎜⎝⎛−⋅⋅⋅=DD VDSS VDSS AS V B B I L 21E 2R G = 25 ΩV DD = 90 V , L = 17.4 mH• The information contained herein is subject to change without notice.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.030619EAARESTRICTIONS ON PRODUCT USE。