MG2028D512 datasheet V1.01
- 格式：pdf
- 大小：570.65 KB
- 文档页数：10
Description
The MG2028D512is a low power CMOS oscillator IC with a fixed 1/512 divider and it can generate 20KHz up to117KHz CMOS output by using an AT-Cut fundamental crystal.
The MG2028D512is designed to generate very low frequency output and operates from 1.35v-3.63v making it ideally suited to generate32.768 KHz output in a miniature crystal oscillator module(as small as 2mmx1.6mm).
Features
∙Wide supply voltage: 1.35V to 3.63V
∙Fundamental crystal input from 10 to 60MHz ∙Generates CMOS output from20KHz to 117KHz
∙Regulated voltage drive oscillator circuit ∙−40 to 85°C operating temperature range ∙4mA output drive capability.
∙Low power consumption
∙Available in Die or Wafer form
Pad
Configuration
Chip Size: 0.67mmx 0.66mm
Chip Thickness: (A) 130±15um or
(B) 180±15um
PAD Size: 90um
Chip Base: GND
Applications
5×7mm,5×3.2mm, 3.2×2.5mm, 2.5×2.0mm,2.0×1.6mm size crystal oscillator modules
Ordering Information
MG2028D512-D2
Functional Block Diagram
Part Number
Package
D1: Die form, 130±15um D2: Die form, 180±15um W1: Wafer form, 130±15um W2: Wafer form, 180±15um
Pad Description
Pad Number
1input
between X1and X2.
7
, Power-saving pull-up resistor built-in.
3, 6
2.
4utput frequency
5upply voltage.
8output
between X1and X2.
Function Description
Standby Function
When INHN goes LOW, the oscillator stops and the output on Q becomes high impedance.
INHN
HIGH (or open)
Low
Electrical Specifications
Absolute Maximum Ratings
(Gnd=0V)
Symbol
V DD GND0.5 to +4.0
V IN0.5 to V DD+0.5
V OUT0.5 to V DD+0.5
T STG65 to +150
T OPR140to +85
ESD
Notes:
1.Exposure of the device under conditions beyond the limits specified by Maximum Ratings for extended periods may cause permanent damage to the device and affect product reliability. These conditions represent a stress rating only, and functional operations of the device at these or any other conditions above the operational limits noted in this specifica tion is not implied.
Recommended Operating Conditions
(Gnd=0V)
Symbol
Min
V DD≤50pF
V IN nd DD
f O Crystal
f OUT at Q≤50pF Hz
DC Characteristics
(V DD= 1.35to 3.63V,Gnd= 0V, Ta = −40 to +85°C unless otherwise noted.)
Symbol
Min V OH-level output voltage OH=–4mA DD–0.4
V OL-level output voltage OL= 4mA
V IH-level input voltage V DD
V IL-level input voltage V DD
I Z
OH
= V DD
V OL= V SS2
I DD OUT =31.25KHz
NO Load
DD
= 3.3V2 V DD=2.5V
V DD=1.8V
V DD=1.5V7
I ST
I OC OL= 0.4V, V OH= 2.4V R UP-up resistance
AC Characteristics
(V DD= 1.35to 3.63V,Gnd= 0V, Ta = −40 to +85°C unless otherwise noted.) Symbol
Min
f o Fundamental Crystal
t s-up (VDD > 90% VDD)
t r/t f L = 15pF,
0.1V DD to 0.9 V DD
s Duty L= 15pF55
t OD
time L
≤15pF s V sen DD Sensitivity DD, +/-10%0.55
Switching Timing Characteristics
Measurement Circuits Measurement cct 1
Measurement cct2
Measurement cct3
Measurement cct4
Measurement cct5
Measurement cct6。
