STB60NE03L-12中文资料
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STB60NE03L-12
N - CHANNEL 30V - 0.009 Ω - 60A - D 2
PAK "SINGLE FEATURE SIZE ™" POWER MOSFET
PRELIMINARY DATA
s
DS(on)s AVALANCE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100o C s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175o C OPERATING TEMPERATURE s
APPLICATION ORIENTED CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size ™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTER s AUTOMOTIVE ENVIRONMENT ®
July 1998
ABSOLUTE MAXIMUM RATINGS
SD DD (BR)DSS j JMAX
1/5
STB60NE3L1-16
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified) OFF
ON (∗
)
DYNAMIC
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(•
) Pulse width limited by safe operating area
STB60NE3L1-16
STB60NE3L1-16
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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STB60NE3L1-16。