PC3Q67Q中文资料

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s Electro-optical Characteristics
Parameter Conditions Input
Forward voltage I F =20mA Terminal capacitance Output
V CE =50V, I F =0Collector-emitter I C =0.1mA, I F =0Emitter-collector I E =10µA, I F =0Transfer charac-teristics
Collector current
I F =1mA, V CE =5V Collector-emitter saturation voltage I F =20mA I C =1mA Isolation resistance DC500V 40 to 60%RH Floating capacitance V =0, f =1MHz Response time
Rise time Fall time PC3H7PC3Q67Q
PC3H7PC3Q67Q PC3H7PC3Q67Q
MIN.−−−7060.2−5×1010
−−−
TYP.1.230−−−0.11×10110.643
MAX.1.4250
100−−
35−−−4
0.2−1.01818
Collector dark current
breakdown voltage breakdown voltage Symbol V F C t I CEO BV CEO I C =0.1mA, I F =0BV CEO BV ECO
I C I F =5mA, V CE =5V
I C V CE(sat)C f t r t f
R ISO V =0, f =1kHz Unit V Reverse current
V R =4V −−10I R µA
nA V CE =20V, I F =0−−100I CEO nA
V V V mA 2.5530mA V ΩpF pF µs µs
V CE =2V I C =2mA R L =100Ω
(Ta =25˚C)F o r w a r d c u r r e n t I F (m A )
0102030405060−30
025********
5550Ambient temperature T a (°C)
D i o d e p o w e r d i s s i p a t i o n P (m W )
01008060704020−30
055100
50Ambient temperature T a (°C)
Fig.1 Forward Current vs. Ambient
Temperature
Fig.2 Diode Power Dissipation vs. Ambient
Temperature
P o w e r d i s s i p a t i o n P t o t (m W )
025020015017010050−30
025*******
Ambient temperature T a (°C)Forward voltage V F (V)
25102050100200
5001
F o r w a r d c u r r e n t I F (m A )
C o l l e c t o r p o w e r d i s s i p a t i o n P C (m W )
0200
150
100
50
−30
0255075100125
Ambient temperature T a (°C)
Pulse width <=100µs T a =25°C
P e a k f o r w a r d c u r r e n t I F M (m A )5
1000050002000100050020010050201052
10−352
10−252
10−15
1
Duty ratio
C u r r e n t t r a n s f e r r a t i o C T R (%)
0500
400
300
200
100
0.1
110100
Forward current I F (mA)
V CE =5V T a =25°C
C o l l e c t o r c u r r e n t I C (m A )
050
40
30
20
10
2
4
6
8
10
Collector-emitter voltage V CE (V)
1mA
5mA
10mA
20mA I F =30mA
P C (max)
T a =25°C
Fig.7 Current Transfer Ratio vs. Forward
Current
Fig.3 Collector Power Dissipation vs.
Ambient Temperature
Fig.4 Total Power Dissipation vs. Ambient
Temperature
Fig.6 Forward Current vs. Forward Voltage
Fig.5 Peak Forward Current vs. Duty Ratio
Fig.8 Collector Current vs. Collector-emitter
Voltage
R e l a t i v e c u r r e n t t r a n s f e r r a t i o (%)
0150
100
50
−30
020*********
Ambient temperature T a (°C)
I F =5mA V CE =5V
R e s p o n s e t i m e (µs )
0.110020501000200500102510.20.5
Load resistance R L (k Ω)
C o l l e c t o r -e m i t t e r s a t u r a t i o n v o l t a g e V C E (s a t ) (V )
0.000.160.140.120.100.080.060.040.02
−30
020*********
Ambient temperaturet T a (°C)
I F =20mA I C =1mA
C o l l e c t o r d a r k c u r r e n t I C E O (A )
10−11
10−5
5
10−6
5
10−7
5
10−8
5
10−9
5
10−10
5
−30
020*********Ambient temperature T a (°C)V CE =20V
Fig.13
Test Circuit for Response Time
010
8
6
4
2Forward current I F (mA)
C o l l e c t o r -e m i t t e r s a t u r a t i o n v o l t a g e V C E (s a t ) (V )
Fig.14Collector-emitter Saturation Voltage
vs. Forward Current
Fig.9Relative Current Transfer Ratio vs.
Ambient Temperature
Fig.10Collector-emitter Saturation
Voltage vs. Ambient Temperature
Fig.12Response Time vs. Load Resistance
Fig.11Collector Dark Current vs. Ambient
Temperature
s Precautions for Use
Please refer to the chapter "Precautions for Use".
Fig.15Reflow Soldering
25°C
230°C
200°C
180°C
Only one time soldering is recommended within the temperature profile shown below.。