IRGP20B60PD

  • 格式:pdf
  • 大小:740.19 KB
  • 文档页数:11

WARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEIRGP20B60PDPD - 94626Features•NPT Technology, Positive Temperature Coefficient •Lower V CE (SAT)•Lower Parasitic Capacitances •Minimal Tail Current•HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode •Tighter Distribution of Parameters •Higher ReliabilityBenefits•Parallel Operation for Higher Current Applications •Lower Conduction Losses and Switching Losses •Higher Switching Frequency up to 150kHzTO-247ACV CES = 600V V CE(on) typ. = 2.05V @ V GE = 15V I C = 13.0AEquivalent MOSFETParametersR CE(on) typ. = 158m ΩI D (FET equivalent) = 20AApplications•Telecom and Server SMPS •PFC and ZVS SMPS Circuits •Uninterruptable Power Supplies•Consumer Electronics Power SuppliesGC E SMPS IGBTIRGP20B60PDR CE(on) typ. = equivalent on-resistance = V CE(on) typ. / I C , where V CE(on) typ. = 2.05V and I C = 13A. I D (FET Equivalent) is the equivalent MOSFET I D rating @ 25°C forapplications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.V CC = 80% (V CES ), V GE = 15V, L = 28µH, R G = 22Ω. Pulse width limited by max. junction temperature.Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.C oes eff. is a fixed capacitance that gives the same charging time as C oes while V CE is rising from 0 to 80% V CES .C oes eff.(ER) is a fixed capacitance that stores the same energy as C oes while V CE is rising from 0 to 80% V CES .IRGP20B60PDFig. 5 - Typ. IGBT Output CharacteristicsT J = 25°C; tp = 80µs Fig. 6 - Typ. IGBT Output CharacteristicsT J = 125°C; tp = 80µs123456V CE (V)I C E (A )123456V CE (V)I C A )I C (A )Fig. 8 - Typical V CE vs. V GET J = 25°CFig. 9 - Typical V CE vs. V GET J = 125°CFig. 12 - Typ. Switching Time vs. I CT J = 125°C; L = 200µH; V CE = 390V, R G = 10Ω; V GE = 15V.Diode clamp used: 8ETH06 (See C.T.3)Fig. 11 - Typ. Energy Loss vs. I CT J = 125°C; L = 200µH; V CE = 390V, R G = 10Ω; V GE = 15V.Diode clamp used: 8ETH06 (See C.T.3)Fig. 10 - Typ. Diode Forward Characteristicstp = 80µs050100150200250300350400450I C E (A )5101520V GE (V)012345678910V C E (V )05101520V GE(V)12345678910V C E (V )510152025I C (A)050100150200250300350E n e r g y (µJ )510152025I C (A)1101001000S w i c h i n g T i m e (n s )1101000.40.81.21.62.02.4FMFI n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A )Forward Voltage Drop - V (V)IRGP20B60PDFig. 14 - Typ. Switching Time vs. R GT J = 125°C; L = 200µH; V CE = 390V, I CE = 13A; V GE = 15VDiode clamp used: 8ETH06 (See C.T.3)Fig. 13 - Typ. Energy Loss vs. R GT J = 125°C; L = 200µH; V CE = 390V, I CE = 13A; V GE = 15VDiode clamp used: 8ETH06 (See C.T.3)Fig. 16- Typ. Capacitance vs. V CEV= 0V; f = 1MHzFig. 15- Typ. Output CapacitanceStored Energy vs. V CEFig. 17 - Typical Gate Charge vs. V GEI CE = 13A5101520253035R G (Ω)50100150200250E n e r g y (µJ )10203040R G (Ω)1101001000S w i c h i n g T i m e (n s )1020304050607080Q G , Total Gate Charge (nC)246810121416V G E (V )100200300400500600700V CE (V)024681012141618E o e s (µJ )20406080100V CE (V)110100100010000C a p a c i t a n c e (p F )Fig. 18 - Normalized Typical V CE(on) vs. Junc-tion Temperature I CE = 13A, V GE = 15VT J , Junction Temperature (°C)N o r m a l i z e d V C E (o n ) (V )IRGP20B60PDFig. 20 - Typical Recovery Current vs. di f /dtFig. 19 - Typical Reverse Recovery vs. di f /dtFig. 21 - Typical Stored Charge vs. di f /dt Fig. 22 - Typical di (rec)M /dt vs. di f /dt,I r r - ( A )t r r - (n C )204060801001000fdi /dt - (A/µs)481216201001000fdi /dt - (A/µs)Q r r - (n C )1002003004005001001000fdi /dt - (A/µs)d i (r e c ) M /d t - (A /µs )1001000100001001000fdi /dt - (A/µs)IRGP20B60PDFig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)t 1 , Rectangular Pulse Duration (sec)T h e r m a l R e s p o n s e ( Z )t 1 , Rectangular Pulse Duration (sec)T h e r m a l R e s p o n s e ( Z )IRGP20B60PDFig.C.T.1 - Gate Charge Circuit (turn-off)Fig.C.T.2 - RBSOA CircuitFig.C.T.4 - Resistive Load CircuitR =V CC I Fig.C.T.3 - Switching Loss Circuit Fig. C.T.5 - Reverse Recovery ParameterTest CircuitREVERSE RECOVERY CIRCUITVCCIRGP20B60PDFig. WF1 - Typ. Turn-off Loss Waveform@ T J = 125°C using Fig. CT.3Fig. WF2 - Typ. Turn-on Loss Waveform@ T J = 125°C using Fig. CT.3Fig. WF3 - Reverse Recovery Waveform andDefinitions-50050100150200250300350400450-0.200.000.200.400.600.80Time(µs)V C E (V )-2024681012141618I C E (A )-500501001502002503003504004507.757.857.958.058.15Time (µs)V C E (V )-5051015202530354045I C E (A )1di /dt f4. Q rr - Area under curve defined by t rrand I RRMt rr X I RRM Q rr =25. di (rec)M /dt - Peak rate of change of current during t b portion of t rr1. di f /dt - Rate of change of current through zero crossing2. I RRM - Peak reverse recovery current3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero currentIRGP20B60PD233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information. 02/03Note: For the most current drawings please refer to the IR website at:/package/。