BZM55C10-TR中文资料

BZM55-SeriesDocument Number 85597Rev. 1.9, 10-Mar-06Vishay Semiconductors19612315Small Signal Zener DiodesFeatures•Saving space•Hermetic sealed parts•Electrical data identical with the devicesBZT55..Series / TZM..Series•Fits onto SOD323/SOD110 footprints •Very sharp reverse characteristic •Low reverse current level •Very high stability •Lownoise•Available with tighter tolerances •Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECApplications•Voltage stabilization Mechanical DataCase: MicroMELFWeight: approx. 12 mgPackaging codes/options:TR / 2.5 k per 7" reel, 12.5 k/box TR3 / 10 k per 13" reel, 10 k/boxAbsolute Maximum RatingsT amb = 25°C, unless otherwise specifiedThermal CharacteristicsT amb = 25°C, unless otherwise specifiedElectrical CharacteristicsT amb = 25°C, unless otherwise specifiedParameterTest conditionSymbol Value Unit Power dissipation R thJA ≤ 300 K/WP V 500mW Z-currentI Z P V /V Z mA Junction temperature T j 175°C Storage temperature rangeT stg- 65 to + 175°CParameterT est conditionSymbol Value Unit Junction to ambient air mounted on epoxy-glass hard tissue, Fig. 1R thJA 500K/W Junction tie point35 µm copper clad, 0.9 mm 2 copper area per electrodeR thJL300K/WParameterT est conditionSymbol MinT yp.Max Unit Forward voltageI F = 200 mAV F1.5V 2Document Number 85597Rev. 1.9, 10-Mar-06BZM55-SeriesVishay SemiconductorsElectrical CharacteristicsBZM55C..1) t p ≤ 10 ms, T/t p > 1000*)Additionnal measurement of Voltage group 9V1 to 75 at 95 % V zmin ≤ 35 nA at T j 25°CPartnumberZener Voltage Range1)Dynamic Resistance T est Current Temperature CoefficientT est Current Reverse Leakage Current V Z at I ZTr zjT at I ZT , f = 1kHz r zjK at I ZK , f = 1kHzI ZTTK VZI ZKI R at T amb = 25°C I R at T amb = 150 °Cat V RV ΩmA%/KmA µA V minmax minmax BZM55C2V4 2.28 2.56< 85< 6005- 0.09- 0.061< 50< 1001BZM55C2V7 2.5 2.9< 85< 6005- 0.09- 0.061< 10< 501BZM55C3V0 2.8 3.2< 90< 6005- 0.08- 0.051< 4< 401BZM55C3V3 3.1 3.5< 90< 6005- 0.08- 0.051< 2< 401BZM55C3V6 3.4 3.8< 90< 6005 -0.08- 0.051< 2< 401BZM55C3V9 3.7 4.1< 90< 6005- 0.08- 0.051< 2< 401BZM55C4V34 4.6< 90< 6005- 0.06- 0.031< 1< 201BZM55C4V7 4.45< 80< 6005- 0.050.021< 0.5< 101BZM55C5V1 4.8 5.4< 60< 5505- 0.020.021< 0.1< 21BZM55C5V6 5.26< 40< 4505- 0.050.051< 0.1< 21BZM55C6V2 5.8 6.6< 10< 20050.030.061< 0.1< 22BZM55C6V8 6.47.2< 8< 15050.030.071< 0.1< 23BZM55C7V577.9< 7< 5050.030.071< 0.1< 25BZM55C8V27.78.7< 7< 5050.030.081< 0.1< 2 6.2BZM55C9V1 *8.59.6< 10< 5050.030.091< 0.1< 2 6.8BZM55C10 *9.40.6< 15< 7050.030.11< 0.1< 27.5BZM55C11 *10.411.6< 20< 7050.030.111< 0.1< 28.2BZM55C12 *11.412.7< 20< 9050.030.111< 0.1< 29.1BZM55C13 *12.414.1< 26< 11050.030.111< 0.1< 210BZM55C15 *13.815.6< 30< 11050.030.111< 0.1< 211BZM55C16 *15.317.1< 40< 17050.030.111< 0.1< 212BZM55C18 *16.819.1< 50< 17050.030.111< 0.1< 213BZM55C20 *18.821.2< 55< 22050.030.111< 0.1< 215BZM55C22 *20.823.3< 55< 22050.040.121< 0.1< 216BZM55C24 *22.825.6< 80< 22050.040.121< 0.1< 218BZM55C27 *25.128.9< 80< 22050.040.121< 0.1< 220BZM55C30 *2832< 80< 22050.040.121< 0.1< 222BZM55C33 *3135< 80< 22050.040.121< 0.1< 224BZM55C36 *3438< 80< 22050.040.121< 0.1< 227BZM55C39 *3741< 90< 500 2.50.040.120.5< 0.1< 530BZM55C43 *4046< 90< 600 2.50.040.120.5< 0.1< 533BZM55C47 *4450110< 700 2.50.040.120.5< 0.1< 536BZM55C51 *4854125< 700 2.50.040.120.5< 0.1< 1039BZM55C56 *5260135< 1000 2.50.040.120.5< 0.1< 1043BZM55C62 *5866150< 1000 2.50.040.120.5< 0.1< 1047BZM55C68 *6472200< 1000 2.50.040.120.5< 0.1< 1051BZM55C75 *7079250< 15002.50.040.120.5< 0.1< 1056BZM55-SeriesDocument Number 85597Rev. 1.9, 10-Mar-06Vishay Semiconductors3Electrical CharacteristicsBZM55B..1) t p ≤ 10 ms, T/t p > 1000*)Additionnal measurement of Voltage group 9V1 to 75 at 95 % V zmin ≤ 35 nA at T j 25°CPartnumberZener Voltage Range 1)Dynamic Resistance Test Current T emperature CoefficientT est Current Reverse Leakage Current V Z at I ZTr zjT at I ZT , f = 1kHz r zjK at I ZK , f = 1kHzI ZTTK VZI ZKI R at T amb = 25 °CI R at T amb = 150 °Cat V RV ΩmA%/KmA µA V minmax min max BZM55B2V4 2.35 2.45< 85< 6005- 0.09- 0.061< 50< 1001BZM55B2V7 2.64 2.76< 85< 6005- 0.09- 0.061< 10< 501BZM55B3V0 2.94 3.06< 90< 6005- 0.08- 0.051< 4< 401BZM55B3V3 3.24 3.36< 90< 6005- 0.08- 0.051< 2< 401BZM55B3V6 3.52 3.68< 90< 6005- 0.08- 0.051< 2< 401BZM55B3V9 3.82 3.98< 90< 6005- 0.08- 0.051< 2< 401BZM55B4V3 4.22 4.38< 90< 6005- 0.06- 0.031< 1< 201BZM55B4V7 4.6 4.80< 80< 6005- 0.050.021< 0.5< 101BZM55B5V15 5.20< 60< 5505- 0.020.021< 0.1< 21BZM55B5V6 5.48 5.72< 40< 4505- 0.050.051< 0.1< 21BZM55B6V2 6.08 6.32< 10< 20050.030.061< 0.1< 22BZM55B6V8 6.66 6.94< 8< 15050.030.071< 0.1< 23BZM55B7V57.357.65< 7< 5050.030.071< 0.1< 25BZM55B8V28.048.36< 7< 5050.030.081< 0.1< 2 6.2BZM55B9V1 *8.929.28< 10< 5050.030.091< 0.1< 2 6.8BZM55B10 *9.810.20< 15< 7050.030.11< 0.1< 27.5BZM55B11 *10.7811.22< 20< 7050.030.111< 0.1< 28.2BZM55B12 *11.7612.24< 20< 9050.030.111< 0.1< 29.1BZM55B13 *12.7413.26< 26< 11050.030.111< 0.1< 210BZM55B15 *14.715.30< 30< 11050.030.111< 0.1< 211BZM55B16 *15.716.30< 40< 17050.030.111< 0.1< 212BZM55B18 *17.6418.36< 50< 17050.030.111< 0.1< 213BZM55B20 *19.620.40< 55< 22050.030.111< 0.1< 215BZM55B22 *21.5522.45< 55< 22050.040.121< 0.1< 216BZM55B24 *23.524.5< 80< 22050.040.121< 0.1< 218BZM55B27 *26.427.6< 80< 22050.040.121< 0.1< 220BZM55B30 *29.430.6< 80< 22050.040.121< 0.1< 222BZM55B33 *32.433.6< 80< 22050.040.121< 0.1< 224BZM55B36 *35.336.7< 80< 22050.040.121< 0.1< 227BZM55B39 *38.239.8< 90< 500 2.50.040.121< 0.1< 530BZM55B43 *42.143.9< 90< 600 2.50.040.120.5< 0.1< 533BZM55B47 *46.147.9< 110< 700 2.50.040.120.5< 0.1< 536BZM55B51 *5052.0< 125< 700 2.50.040.120.5< 0.1< 1039BZM55B56 *54.957.1< 135< 1000 2.50.040.120.5< 0.1< 1043BZM55B62 *60.863.2< 150< 1000 2.50.040.120.5< 0.1< 1047BZM55B68 *66.669.4< 200< 1000 2.50.040.120.5< 0.1< 1051BZM55C75 *73.576.5< 250< 15002.50.040.120.5< 0.1< 1056 4Document Number 85597Rev. 1.9, 10-Mar-06BZM55-SeriesVishay Semiconductors Typical CharacteristicsT amb = 25°C, unless otherwise specifiedFigure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Typical Change of Working Voltage under OperatingConditions at T amb =25°CFigure 3. Temperature Coefficient of Vz vs. Z-Voltage 01201600100300400500600P t o t - T o t a l P o w e r D i s s i p a t i o n (m W )T am b - Am b ient Temperat u re (°C)20095 960220080401015201101001000V Z - V o l t a g e C h a n g e (m V )V Z - Z-V oltage (V )2595 95980530- 5051015V Z - Z-V oltage (V )5095 96004010200T K V Z - T e m p e r a t u r e C o e f f i c i e n t o f V Z (10-4/K )Figure 4. Diode Capacitance vs. Z-VoltageFigure 5. Typical Change of Working Voltage vs. JunctionTemperatureFigure 6. Forward Current vs. Forward Voltage10150C D - D i o d e C a p a c i t a n c e (p F )V Z - Z-V oltage (V )95 96012005- 60601201800.80.91.01.11.21.3V Z t n - R e l a t i v e V o l t a g e C ha n g eT j - J u nction Temperat u re (°C)95 959900.20.40.60.80.0010.010.1110100 1.095 9605I F - F o r w a r d C u r r e n t (m A )V F - For w ard V oltage (V )BZM55-SeriesDocument Number 85597Rev. 1.9, 10-Mar-06Vishay Semiconductors5Figure 7. Z-Current vs. Z-VoltageFigure 8. Z-Current vs. Z-VoltageFigure 9. Differential Z-Resistance vs. Z-Voltage 82095 9604020406080100I Z - Z -C u r r e n t (m A)4612V Z - Z-V oltage (V )15202530I Z - Z -C u r r e n t (m A )V Z - Z-V oltage (V )95 960751015201101001000(Ω)95 9606V Z - Z-V oltage (V )r Z - D i f f e r e n t i a l Z -R e s i s t a n c e Figure 10. Board for R thJA definition (in mm)Figure 11. Recommended foot pads (in mm)Figure12. Recommended foot pads (in mm)Reflo w SolderingW a v e Soldering 6Document Number 85597Rev. 1.9, 10-Mar-06BZM55-SeriesVishay SemiconductorsPackage Dimensions in mm (Inches)Figure 13. Thermal ResponseZ t h p - T h e r m a l R e s i s t a n c e f o r P u l s e C o n d . (K W )t P - P u lse Length (ms)95 960310-1100101102BZM55-SeriesDocument Number 85597Rev. 1.9, 10-Mar-06Vishay Semiconductors7Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personaldamage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。