SHORT COMMUNICATIONResearchSolar Cell Efficiency Tables (Version 30)Martin A.Green 1*,y ,Keith Emery 2,Yoshihiro Hisikawa 3and Wilhelm Warta 41ARC Photovoltaics Centre of Excellence,University of New South Wales,Sydney 2052,Australia 2National Renewable Energy Laboratory,1617Cole Boulevard,Golden,CO 80401,USA 3National Institute of Advanced Industrial Science and Technology (AIST),Research Center for Photovoltaics (RCPV),Central 2,Umezono 1-1-1,Tsukuba,Ibaraki,Japan 4Fraunhofer Institute for Solar Energy Systems,Department of Solar Cells –Materials and Technology,Heidenhofstr.2D-79110Freiburg,GermanyConsolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented.Guidelines for inclusion of results into these tables are outlined and new entries since January 2007are reviewed.Copyright #2007John Wiley &Sons,Ltd.key words :solar cell efficiency;photovoltaic efficiency;energy conversion efficiency Received 6June 2007INTRODUCTIONSince January 1993,‘Progress in Photovoltaics’has published six monthly listings of the highest confirmed efficiencies for a range of photovoltaic cell and module technologies.1–3By providing guidelines for the inclusion of results into these tables,this not only provides an authoritative summary of the current state of the art but also encourages researchers to seek independent confirmation of results and to report results on a standardised basis.In the present article,new results since January 2007are briefly reviewed.The most important criterion for inclusion of results into the tables is that they must have been measured by a recognised test centre listed in an earlier issue.2A distinction is made between three different eligible areas:total area;aperture area and designated illumination area.1‘Active area’efficiencies are not included.There are also certain minimum values of the area sought for the different device types (above 0Á05cm 2for a concentrator cell,1cm 2for a one-sun cell,and 800cm 2for a module).1Results are reported for cells and modules made from different semiconductors and for subcategories within each semiconductor grouping (e.g.crystalline,polycrystalline and thin film).NEW RESULTSHighest confirmed cell and module results are reported in Tables I,II and IV .Any changes in the tables from those previously published 3are set in bold type.In most cases,a literature reference is provided that describes either the result reported or a similar result.Table I summarises the best measurements for cells and submodules,Table II shows the best results for modules and Table IV shows the best results for concentrator cells and concentrator modules.Table III contains what might be described as ‘notable exceptions’.While not conformingPROGRESS IN PHOTOVOLTAICS:RESEARCH AND APPLICATIONS Prog.Photovolt:Res.Appl.2007;15:425–430Published online in Wiley InterScience ()DOI:10.1002/pip.781*Correspondence to:Martin A.Green,ARC Photovoltaics Centre of Excellence,University of New South Wales,Sydney 2052,Australia.yE-mail:m.green@.auCopyright #2007John Wiley &Sons,Ltd.to the requirements to be recognised as a class record,the cells and modules in this table have notable characteristics that will be of interest to sections of the photovoltaic community with entries based on their significance and timeliness.To ensure discrimination,Table III is limited to nominally 10entries with the present authors having voted for their preferences for inclusion.Readers who have suggestions of results for inclusion into this Table are welcome to contact any of the authors with full details.Suggestions conforming to the guidelines will be included on the voting list for a future issue.(A smaller number of ‘notable exceptions’for concentrator cells and modules additionally is included in Table IV ,as are results under a recently proposed low aerosol optical depth direct-beam spectrum 4).This issue of the tables has some exceptional results to report.The first new result is reported in Table I where the 18Á8%result for a 1cm 2CdS/Cu(In,Ga)Se 2polycrystalline cell 5fabricated by the National RenewableTable I.Confirmed terrestrial cell and submodule efficiencies measured under the global AM1Á5spectrum (1000W/m 2)at 258CClassification ÃEffic.y (%)Area z (cm 2)V oc (V)J sc (mA/cm 2)FF x (%)Test centre ô(and date)DescriptionSiliconSi (crystalline)24Á7Æ0.54Á00(da)0Á70642Á282Á8Sandia (3/99)UNSW PERL 9Si (multicrystalline)20Á3Æ0.51Á002(ap)0Á66437Á780Á9NREL (5/04)FhG-ISE 10Si (thin film transfer)16Á6Æ0.44Á017(ap)0Á64532Á878Á2FhG-ISE (7/01)U.Stuttgart (45m m thick)11Si (thin film submodule)9Á8Æ0Á396Á3(ap)0Á487ÃÃ27Á0ÃÃ74Á5Sandia (8/06)CSG Solar (1-2m m on glass;20cells)12III–V CellsGaAs (crystalline)25Á1Æ0Á8 3.91(t)1Á02228Á287Á1NREL (3/90)Kopin,AlGaAs window 13GaAs (thin film)24Á5Æ0Á51Á002(t)1Á02928Á882Á5FhG-ISE (5/05)Radboud U.,NL 14GaAs (multicrystalline)18Á2Æ0Á54Á011(t)0Á9942379Á7NREL (11/95)RTI,Ge substrate 15InP (crystalline)21Á9Æ0Á74Á02(t)0Á87829Á385Á4NREL (4/90)Spire,epitaxial 16Thin film chalcogenide CIGS (cell)18Á8Æ0Á61Á00(ap)0Á7033478Á7FhG-ISE (8/06)NREL,CIGS on glass 5CIGS (submodule)16Á6Æ0Á416Á0(ap)0Á661ÃÃ33Á4ÃÃ75Á1FhG-ISE (3/00)U.Uppsala,4serial cells 17CdTe (cell)16Á5Æ0Á5yy1Á032(ap)0Á84525Á975Á5NREL (9/01)NREL,mesa on glass 18Amorphous/Nanocrystalline Si Si (amorphous)zz 9Á5Æ0Á31Á070(ap)0Á85917Á563NREL (4/03)U.Neuchatel 19Si (nanocrystalline)10Á1Æ0Á21Á199(ap)0Á53924Á476Á6JQA (12/97)Kaneka (2m m on glass)20Photochemical Dye sensitised10Á4Æ0Á31Á004(ap)0Á72921Á865Á2AIST (8/05)Sharp 21Dye sensitised (submodule)6Á3Æ0Á226Á5(ap)6Á1451Á760Á4AIST (8/05)Sharp 22OrganicOrganic polymer xx 3Á0Æ0Á11Á001(ap)0Á5389Á6852Á4AIST (3/06)Sharp,fullerene derivative 23Multijunction devices GaInP/GaAs/Ge 32Á0Æ1Á53Á989(t)2Á62214Á3785NREL (1/03)Spectrolab (monolithic)GaInP/GaAs30Á34Á0(t)2Á48814Á2285Á6JQA (4/96)Japan Energy (monolithic)24GaAs/CIS (thin film)25Á8Æ1Á34Á00(t)———NREL (11/89)Kopin/Boeing (4terminal)25a-Si/m c-Si (thin submodule)ôô11Á7Æ0Á414Á23(ap)5Á4622Á9971Á3AIST (9/04)Kaneka (thin film)26ÃCIGS ¼CuInGaSe 2;a-Si ¼amorphous silicon/hydrogen alloy.yEffic.¼efficiency.z(ap)¼aperture area;(t)¼total area;(da)¼designated illumination area.xFF ¼fill factor.ôFhG-ISE ¼Fraunhofer Institut fu¨r Solare Energiesysteme;JQA ¼Japan Quality Assurance;AIST ¼Japanese National Institute of Advanced Industrial Science and Technology.ÃÃReported on a ‘per cell’basis.yyNot measured at an external laboratory.zzStabilized by 800h,1sun AM1Á5illumination at a cell temperature of 508C.xxStability not investigated.ôôStabilised by 174h,1sun illumination after 20h,5sun illumination at a sample temperature of 508C.Copyright #2007John Wiley &Sons,Ltd.Prog.Photovolt:Res.Appl.2007;15:425–430DOI:10.1002/pip426M.A.GREEN ET AL.Energy Laboratory (NREL),reported in the previous version of these Tables,3has now been confirmed at an external laboratory.An identical efficiency,the highest ever for a polycrystalline thin-film cell of this area,was measured at the Fraunhofer Institute for Solar Energy Systems (FhG-ISE).The second new result appears in Table II where an efficiency of 19Á7%is reported on an aperture area basis for a large crystalline silicon module fabricated by SunPower using cells from a commercial production line,with module efficiency measured at NREL.6On a total area basis,including module frame,efficiency was still above 19%.A third new result is reported in Table III,‘notable exceptions’.An efficiency of 33Á8%is reported for a small area (0Á25cm 2)GaInP/GaAs/GaInAs cell 7fabricated and measured by NREL under the one-sun global spectrum.This cell has too small an area to be considered as an outright record,but shows the large potential for future improvement with this technology.Table III.‘Notable exceptions’:‘Top ten’confirmed cell and module results,not class records (Global AM1Á5spectrum,1000W/m 2,258C).Classification ÃEffic.y (%)Area z (cm 2)V oc (V)J sc (mA/cm 2)FF (%)Test centre(and date)DescriptionCells (silicon)Si (MCZ crystalline)24Á5Æ0Á54Á0(da)0Á70441Á683Á5Sandia (7/99)UNSW PERL,SEH MCZ substrate 33Si (moderate area)23Á7Æ0Á522Á1(da)0Á70441Á581Á0Sandia (8/96)UNSW PERL,FZ substrate 27Si (large FZ crystalline)21Á8Æ0Á7147Á4(t)0Á67740Á080Á6FhG-ISE (3/06)SunPower FZ substrate 34Si (large CZ crystalline)21Á8Æ0Á5100Á4(t)0Á71838Á479Á0AIST (4/06)Sanyo HIT,n-type CZ substrate 35Si (large multicrystalline)18Á1Æ0Á5137Á7(t)0Á63636Á977Á0FhG-ISE (8/05)U.Konstanz,laser grooved 36Cells (other)GaInP/GaInAs/GaInAs (tandem)33Á8Æ2Á0ô0Á25(ap)2Á96013Á186Á8NREL (1/07)NREL,monolithic 7CIGS (thin film)19Á5Æ0Á60Á410(ap)0Á69335Á379Á4FhG-ISE (9/04)NREL,CIGS on glass 37a-Si/a-Si/a-SiGe (tandem)12Á1Æ0Á70Á27(da)2Á2977Á5669Á7NREL (10/96)USSC stabilised (monolithic)38Photoelectrochemical 11Á1Æ0Á30Á219(ap)0Á73620Á972Á2AIST (3/06)Sharp,dye sensitised 21Organic polymer4Á8Æ0Á2x 0Á142(ap)0Á8599Á0462Á1NREL (7/05)Konarka,polymer:PCBM blend 39,40ÃCIGS ¼CuInGaSe 2.yEffic.¼efficiency.z(ap)¼aperture area;(t)¼total area;(da)¼designated illumination area.xStability not investigated.ôNot measured at an external laboratory.Table II.Confirmed terrestrial module efficiencies measured under the global AM1Á5spectrum (1000W/m 2)at a celltemperature of 258CClassification ÃEffic.y (%)Area z (cm 2)V oc (V)I sc (A)FF x (%)Test centre (and date)DescriptionSi (crystalline)22Á7Æ0.6778(da)5Á603Á9380Á3Sandia (9/96)UNSW/Gochermann 27Si (large crystalline)19Á7Æ0Á712082(ap)48Á66Á3676Á9NREL (5/07)SunPower 6Si (multicrystalline)15Á3Æ0Á4ô1017(ap)14Á61Á3678Á6Sandia (10/94)Sandia/HEM 28Si (thin-film polycrystalline)8Á2Æ0Á2661(ap)25Á00Á31868Á0Sandia (7/02)Pacific Solar (1-2m m on glass)29CIGSS 13Á4Æ0Á73459(ap)31Á22Á1668Á9NREL (8/02)Showa Shell (Cd free)30CdTe10Á7Æ0Á54874(ap)26Á213Á20562Á3NREL (4/00)BP Solarex 31a-Si/a-SiGe/a-SiGe (tandem)ÃÃ10Á4Æ0Á5905(ap)4Á3533Á28566Á0NREL (10/98)USSC (a-Si/a-Si/a-Si:Ge)32ÃCIGSS ¼CuInGaSSe;a-Si ¼amorphous silicon/hydrogen alloy;a-SiGe ¼amorphous silicon/germanium/hydrogen alloy.yEffic.¼efficiency.z(ap)¼aperture area;(da)¼designated illumination area.xFF ¼fill factor.ôNot measured at an external laboratory.ÃÃLight soaked at NREL for 1000h at 508C,nominally 1-sun illumination.Copyright #2007John Wiley &Sons,Ltd.Prog.Photovolt:Res.Appl.2007;15:425–430DOI:10.1002/pipSOLAR CELL EFFICIENCY TABLES 427A major photovoltaic milestone is reported in Table IV ,the first solar cell to exceed 40%energy conversion efficiency.An efficiency of 40Á7%is reported at 240suns concentration (more correctly,240kW/m 2direct irradiance)under the low aerosol optical depth direct-beam spectrum 4for a triple-junction GaInP/GaInAs/Ge cell 8fabricated by Spectrolab and measured at NREL.DISCLAIMERWhile the information provided in these tables is provided in good faith,the authors,editors and publishers cannot accept direct responsibility for any errors or omissions.REFERENCES1.Green MA,Emery K,King DL,Igari S.Solar cell efficiency tables (version 15).Progress in Photovoltaics:Research and Applications 2000;8:187–196.2.Green MA,Emery K,King DL,Igari S.Solar cell efficiency tables (version 17).Progress in Photovoltaics:Research and Applications 2001;9:49–56.3.Green MA,Emery K,King DL,Hishikawa Y ,Warta W.Solar cell efficiency tables (version 29).Progress in Photovoltaics:Research and Applications 2007;15:35–40.4.Gueymard CA,Myers D,Emery K.Proposed reference irradiance spectra for solar energy systems testing.Solar Energy 2002;73:443–467.Table IV .Terrestrial concentrator cell and module efficiencies measured under the direct beam AM1Á5spectrum at a celltemperature of 258CClassificationEffic.Ã(%)Area y (cm 2)Intensity z (suns)Test centre (and date)DescriptionSingle cells GaAs 27Á8Æ1Á00Á203(da)216Sandia x (8/88)Varian,Entech cover 41Si26Á8Æ0Á81Á60(da)96FhG-ISE (10/95)SunPower back-contact 42CIGS (thin film)21Á5Æ1Á5ô0Á102(da)14NREL (2/01)NRELMultijunction cellsGaInP/GaAs/Ge (2-terminal)34Á7Æ1Á70Á267(da)333NREL 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