FP15R06KL4中文资料

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Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral 2 I t - value tP = 1 ms VR = 0V, tp = 10ms, Tvj = 125°C IF IFRM
2
Tvj =25°C TC =80°C TC =80°C tP = 10 ms, T vj = tP = 10 ms, T vj = 25°C 25°C
VRRM IFRMSM IRMSmax IFSM It
2
800 23 36 197 158 194 125
V A A A A As As
2 2
tP = 10 ms, T vj = 150°C tP = 10 ms, T vj = 150°C
元器件交易网
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FP15R06KL4
Vorläufig Preliminary
Elektrische Eigenschaften / Electrical properties
RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate
Modul Isolation/ Module Isolation Isolations-Prüfspannung insulation test voltage VISOL 2,5 kV
Elektrische Eigenschaften / Electrical properties
min.
-
typ.
1 0,71 18 5
max.
V V mW mA
-
11
-
mW
Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25°C, Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, Gate-Schwellenspannung gate threshold voltage Eingangskapazität input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data VCE = VGE, Tvj = 25°C,
VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = LS = IC = INenn, V CC = LS = tP £ 10µs, VGE £ 15V, Tvj£125°C, RG = VCC = dI/dt = VGE = ±15V, Tvj = 125°C, R G = VGE = ±15V, Tvj = 125°C, R G =
FP15R06KL4
Vorläufig Preliminary
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values min.
Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current Sperrverzögerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy TC = 25°C LsCE RCC'+EE' -
typ.
1,95 2,2 5,5 0,8 5,0 -
max.
2,55 6,5 400 V V V nF mA nA
f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V VGE = 0V, Tvj =125°C, V CE = 600V
VCE = 0V, VGE =20V, Tvj =25°C IC = INenn, V CC =
2 It
Tvj =25°C TC =65°C TC = 25 °C tP = 1 ms, TC = 25°C T C =65°C
VCES IC,nom. IC ICRM Ptot VGES
600 15 19 30 60 +/- 20V
V A A A W V
15 30 25
A A A2s
Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current prepared by: Thomas Passe approved by: Ingo Graf tP = 1 ms IF IFRM 15 30 A A Tvj =25°C TC =65 °C TC = 25 °C tP = 1 ms, TC = 25°C T C =65°C VCES IC,nom. IC ICRM Ptot VGES 600 15 19 30 60 +/- 20V V A A A W V
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Durchlaßstrom Grenzeffektivwert pro Chip RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output Stoßstrom Grenzwert surge forward current Grenzlastintegral I t - value