IS62WV6416ALL中文资料

• Ultra-Low Dropout Voltage - LDO2, 2.84V. . . . . . . . . . . . . . . 125mV (typ.) at 300mA - LDO3, 2.84V. . . . . . . . . . . . . . . 100mV (typ.) at 200mA
The ISL6411 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. The IC accepts an input voltage range of 3.0V to 3.6V and provides three regulated output voltages: 1.8V (LDO1), 2.84V (LDO2), and another ultra clean 2.84V (LDO3). On chip logic provides sequencing between LDO1 and LDO2 for BBP/MAC and I/O supply voltage outputs. LDO3 features ultra low noise that does not typically exceed 30µV RMS to aid VCO stability. High integration and the thin Quad Flat No-lead (QFN) package makes ISL6411 an ideal choice to power many of today’s small form factor industry standard wireless cards, such as PCMCIA, mini-PCI and Cardbus-32.

20
20
25
25
15
15
20
20
单位 mA mA mA mA
电容(1)
符号
参数
条件
最大
CIN
输入电容
VIN=0V
6
COUT
输入/输出电容
VOUT=0V
8
注
1. 这两个参数均在最开始时测得 设计或处理的任何变化都将影响它们的值
单位 pF pF
4
电子发烧友 电子技术论坛 广州周立功单片机发展有限公司 Tel 020 38730976 38730977 Fax 38730925 http //
2
电子发烧友 电子技术论坛 广州周立功单片机发展有限公司 Tel 020 38730976 38730977 Fax 38730925 http //
管脚配置
44 脚 LQFP
读周期变化特性(1) 工作范围内
符号
参数
10
12
单位
最小
最大
最小
最大
tRC tAA tOHA tACE tDOE tHZOE(2) tLZOE(2) tHZCE(2) tLZCE(2) tBA tHZB(2) tLZB(2) tPU tPD 注
读周期时间 地址访问时间 输出保持时间
CE 访问时间 OE 访问时间 OE 到高阻输出 OE 到低阻输出 CE 到高阻输出 CE 低阻输出 LB , UB 访问时间 LB , UB 到高阻输出 LB , UB 到低阻输出 上电时间 掉电时间
其可靠性
3
电子发烧友 电子技术论坛 广州周立功单片机发展有限公司 Tel 020 38730976 38730977 Fax 38730925 http //

IS62WV25616ALL IS62WV25616BLLISSI®Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.256K x 16 LOW VOLTAGE,ULTRA LOW POWER CMOS STATIC SRAMFEATURES•High-speed access time: 55ns, 70ns •CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby •TTL compatible interface levels •Single power supply1.65V--2.2V V DD (IS62WV25616ALL)2.5V--3.6V V DD (IS62WV25616BLL)•Fully static operation: no clock or refresh required •Three state outputs•Data control for upper and lower bytes •Industrial temperature available •Lead-free availableDESCRIPTIONThe ISSI IS62WV25616ALL/IS62WV25616BLL are high-speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI 's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CS1 is HIGH (deselected) or when CS1 is LOW and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE ) controls both writing and reading of the memory. A data byte allows Upper Byte (UB ) and Lower Byte (LB )access.The IS62WV25616ALL/IS62WV25616BLL are packaged in the JEDEC standard 44-Pin TSOP (TYPE II) and 48-pin mini BGA (6mmx8mm).MAY 20052 Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev.C IS62WV25616ALL, IS62WV25616BLLISSI®PIN DESCRIPTIONSA0-A17Address Inputs I/O0-I/O15Data Inputs/Outputs CS1Chip Enable Input OE Output Enable Input WE Write Enable InputLB Lower-byte Control (I/O0-I/O7)UB Upper-byte Control (I/O8-I/O15)NC No Connection V DD Power GNDGround44-Pin mini TSOP (Type II)(Package Code T)1234567891011121314151617181920212244434241403938373635343332313029282726252423A4A3A2A1A0CS1I/O0I/O1I/O2I/O3V DD GND I/O4I/O5I/O6I/O7WE A16A15A14A13A12A5A6A7OE UB LB I/O15I/O14I/O13I/O12GND V DD I/O11I/O10I/O9I/O8NC A8A9A10A11A17PIN CONFIGURATIONS48- ball mini BGA (6mm x 8mm)(Package Code B)IS62WV25616ALL, IS62WV25616BLL ISSI®TRUTH TABLEI/O PINMode WE CS1OE LB UB I/O0-I/O7I/O8-I/O15V DD Current Not Selected X H X X X High-Z High-Z I SB1, I SB2X X X H H High-Z High-Z I SB1, I SB2 Output Disabled H L H L X High-Z High-Z I CCH L H X L High-Z High-Z I CCRead H L L L H D OUT High-Z I CCH L L H L High-Z D OUTH L L L L D OUT D OUTWrite L L X L H D IN High-Z I CCL L X H L High-Z D INL L X L L D IN D INABSOLUTE MAXIMUM RATINGS(1)Symbol Parameter Value UnitV TERM Terminal Voltage with Respect to GND–0.2 to V DD+0.3VV DD V DD Related to GND–0.2 to V DD+0.3VT STG Storage Temperature–65 to +150°CP T Power Dissipation 1.0WNote:1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. Thisis a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.OPERATING RANGE (V DD)Range Ambient Temperature IS62WV25616ALL IS62WV25616BLLCommercial0°C to +70°C 1.65V - 2.2V 2.5V-3.6VIndustrial–40°C to +85°C 1.65V - 2.2V 2.5V-3.6VDC ELECTRICAL CHARACTERISTICS(Over Operating Range)Symbol Parameter Test Conditions V DD Min.Max.Unit V OH Output HIGH Voltage I OH = -0.1 mA 1.65-2.2V 1.4—VI OH = -1 mA 2.5-3.6V 2.2—VV OL Output LOW Voltage I OL = 0.1 mA 1.65-2.2V—0.2VI OL = 2.1 mA 2.5-3.6V—0.4VV IH Input HIGH Voltage 1.65-2.2V 1.4V DD + 0.2V2.5-3.6V 2.2V DD + 0.3VV IL(1)Input LOW Voltage 1.65-2.2V–0.20.4V2.5-3.6V–0.20.6VI LI Input Leakage GND ≤ V IN≤ V DD–11µAI LO Output Leakage GND ≤ V OUT≤ V DD, Outputs Disabled–11µA Notes: 1. V IL (min.) = –1.0V for pulse width less than 10 ns.IS62WV25616ALL, IS62WV25616BLL ISSI®IS62WV25616ALL, POWER SUPPLY CHARACTERISTICS(1)(Over Operating Range)Symbol Parameter Test Conditions Max.Unit70I C C V DD D ynamic O perating V DD=M ax.,Com.25m ASupply C urrent I OUT = 0 mA, f = f MAX Ind.30I CC1Operating S upply V DD = Max., CS1 = 0.2V Com.10m ACurrent WE=V DD-0.2V Ind.10f=1MHZI SB1TTL Standby Current V DD=M ax.,Com.0.35m A(TTL Inputs)V IN = V IH or V IL Ind.0.35CS1 = V IH , f = 1 MH ZORULB Control V DD = Max., V IN = V IH or V ILCS1 = V IL, f = 0, UB = V IH, LB = V IHI SB2CMOS S tandby V DD=M ax.,Com.15µACurrent (CMOS Inputs)CS1≥V DD – 0.2V,Ind.15V IN≥V DD – 0.2V, orV IN≤ 0.2V, f = 0ORULB Control V DD = Max., CS1 = V IL,V IN≤ 0.2V, f = 0; UB / LB = V DD – 0.2VIS62WV25616BLL, POWER SUPPLY CHARACTERISTICS(1)(Over Operating Range)Symbol Parameter Test Conditions Max.Max.Unit5570I C C V DD D ynamic O perating V DD=M ax.,Com.4035m ASupply C urrent I OUT = 0 mA, f = f MAX Ind.4540I CC1Operating S upply V DD = Max., CS1 = 0.2V Com.1515m ACurrent WE=V DD-0.2V Ind.1515f=1MHZI SB1TTL Standby Current V DD=M ax.,Com.0.350.35m A(TTL Inputs)V IN = V IH or V IL Ind.0.350.35CS1 = V IH, f = 1 MH ZORULB Control V DD = Max., V IN = V IH or V ILCS1 = V IL, f = 0, UB = V IH, LB = V IHI SB2CMOS S tandby V DD=M ax.,Com.1515µACurrent (CMOS Inputs)CS1≥V DD – 0.2V,Ind.1515V IN≥V DD – 0.2V, orV IN≤ 0.2V, f = 0ORULB Control V DD = Max., CS1 = V IL,V IN≤ 0.2V, f = 0; UB / LB = V DD – 0.2V4 Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev.CIS62WV25616ALL, IS62WV25616BLL ISSI®CAPACITANCE(1)Symbol Parameter Conditions Max.UnitC IN Input Capacitance V IN = 0V8pFC OUT Input/Output Capacitance V OUT = 0V10pFNote:1.Tested initially and after any design or process changes that may affect these parameters.AC TEST CONDITIONSIS62WV25616ALL IS62WV25616BLLParameter(Unit)(Unit)Input Pulse Level0.4V to V DD-0.2V0.4V to V DD-0.3VInput Rise and Fall Times 5 ns5nsInput and Output Timing V REF V REFand Reference LevelOutput Load See Figures 1 and 2See Figures 1 and 2IS62WV25616ALL IS62WV25616BLL1.65V-2.2V 2.5V -3.6VR1(Ω)30703070R2(Ω)31503150V REF0.9V 1.5VV TM 1.8V 2.8VFigure 1Figure 2IS62WV25616ALL, IS62WV25616BLL ISSI®READ CYCLE SWITCHING CHARACTERISTICS(1)(Over Operating Range)55 ns70 nsSymbol Parameter Min.Max.Min.Max.Unit t RC Read Cycle Time55—70—ns t AA Address Access Time—55—70ns t OHA Output Hold Time10—10—ns t ACS1CS1 Access Time—55—70ns t DOE OE Access Time—25—35ns t HZOE(2)OE to High-Z Output—20—25ns t LZOE(2)OE to Low-Z Output5—5—ns t HZCS1CS1 to High-Z Output020025ns t LZCS1CS1 to Low-Z Output10—10—ns t BA LB, UB Access Time—55—70ns t HZB LB, UB to High-Z Output020025ns t LZB LB, UB to Low-Z Output0—0—ns Notes:1.Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 toV DD-0.2V/V DD-0.3V and output loading specified in Figure 1.2.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.6 Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev.CIS62WV25616ALL, IS62WV25616BLL ISSI®AC WAVEFORMSREAD CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OE = V IL, WE = V IH, UB or LB = V IL)READ CYCLE NO. 2(1,3)(CS1, OE, AND UB/LB Controlled)Notes:1.WE is HIGH for a Read Cycle.2.The device is continuously selected. OE, CS1, UB, or LB = V IL. WE=V IH.3.Address is valid prior to or coincident with CS1 LOW transition.IS62WV25616ALL, IS62WV25616BLL ISSI®WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)55 ns70 nsSymbol Parameter Min.Max. Min.Max.Unit t WC Write Cycle Time 55— 70—ns t SCS1CS1 to Write End 45— 60—ns t AW Address Setup Time to Write End45— 60—ns t HA Address Hold from Write End0— 0—ns t SA Address Setup Time 0— 0—ns t PWB LB, UB Valid to End of Write45— 60—ns t PWE WE Pulse Width 40— 50—ns t SD Data Setup to Write End 25— 30—ns t HD Data Hold from Write End0— 0—ns t HZWE(3)WE LOW to High-Z Output—20 —20ns t LZWE(3)WE HIGH to Low-Z Output 5— 5—ns Notes:1.Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4V toV DD-0.2V/V DD-0.3V and output loading specified in Figure 1.2.The internal write time is defined by the overlap of CS1 LOW and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but any one cango inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write.3.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.8 Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev.CIS62WV25616ALL, IS62WV25616BLL ISSI®AC WAVEFORMSWRITE CYCLE NO. 1(1,2)(CS1 Controlled, OE = HIGH or LOW)1.WRITE is an internally generated signal asserted during an overlap of the LOW states on the CS1 and WE inputs and atleast one of the LB and UB inputs being in the LOW state.2.WRITE = (CS1) [ (LB) = (UB) ] (WE).WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle)IS62WV25616ALL, IS62WV25616BLL ISSI®WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)WRITE CYCLE NO. 4 (UB/LB Controlled)10 Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev.CIS62WV25616ALL, IS62WV25616BLL ISSI®DATA RETENTION SWITCHING CHARACTERISTICSSymbol Parameter Test Condition Min.Max.UnitV DR V DD for Data Retention See Data Retention Waveform 1.2 3.6VI DR Data Retention Current V DD = 1.2V, CS1≥ V DD – 0.2V—15µAt SDR Data Retention Setup Time See Data Retention Waveform0—nst RDR Recovery Time See Data Retention Waveform t RC—nsDATA RETENTION WAVEFORM (CS1 Controlled)IS62WV25616ALL, IS62WV25616BLL ISSI®ORDERING INFORMATIONIS62WV25616ALL (1.65V-2.2V)Commercial Range: 0°C to +70°CSpeed (ns)Order Part No.Package70IS62WV25616ALL-70T TSOPIndustrial Range: –40°C to +85°CSpeed (ns)Order Part No.Package70IS62WV25616ALL-70TI TSOP70IS62WV25616ALL-70BI mini BGA (6mmx8mm)IS62WV25616BLL (2.5V - 3.6V)Commercial Range: 0°C to +70°CSpeed (ns)Order Part No.Package55IS62WV25616BLL-55T TSOP70IS62WV25616BLL-70T TSOPIndustrial Range: –40°C to +85°CSpeed (ns)Order Part No.Package55IS62WV25616BLL-55TI TSOP55IS62WV25616BLL-55TLI TSOP, Lead-free55IS62WV25616BLL-55BI mini BGA (6mmx8mm)55IS62WV25616BLL-55BLI mini BGA (6mmx8mm), Lead-freePACKAGING INFORMATIONISSI®Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to Mini Ball Grid ArrayPackage Code: B (48-pin)PACKAGING INFORMATIONISSI®Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any timewithout notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to Plastic TSOPPackage Code: T (Type II)。

AV6416Handheld HandheldOTDROTDRProduct Summarizations:AV6416palm OTDRisthenewestinstrumentdesignedfor testingFTTxnetwork.It'smainlyusedtomeasurethephysical characteristicsof opticalfiber under test,suchasthelength 、thetransmissionlossandthesplicelossetc..Itcan alsolocatethefaultsorbreaksofopticalfiber.It'swidelyappliedinthemanufacture,constructionandmaintenance inoptical fibercommunicationsystem.AV6416palmOTDRhasthemost advancedtechnologyofdouble-color&material integrativemould,whichisnovel andbeautifulinappearance.AV6416offersthreewavelengthsandVLFinonehandheldunit,especiallyfor testingpassiveoptical network(PON)inFTTx.Inaddition,it'sequippedwithcomfortablegallusfor carryingconveniently.Mainly Mainlyfeatures:features:♦handheld 、lightweightandconveniencefor carrying♦The mostadvanced technologyofdouble-color&materialintegrative mouldintrade♦Advancedanti-reflectiveTFT LCD,visible clearlyinfield♦1.6mextra-shorteventdeadzone♦0.25m highresolution,65535samplingpoints♦Fastautomeasurement,one-buttonoperating♦DoubleUSBinterfaces,supportingUSBstickanddirectcabledownloadtoPC viaActiveSync♦SupportingBellcoreGR196fileformat inwritingorreading♦Functionof intelligentindicatingofremainingcapacityofbatteryandwarningifthevoltageof batteryis low.♦WinCEoperationsystem,doubleoperatinginterface ofChineseandEnglish♦Built-inlithiumbatterywithhighcapacity for over10hoursofoperatinglife♦Visiblefaultlocating(VFL)♦Universal FC/PC,FC/SC,FC/STconnector type,it'sconvenientforsurfacecleaning♦Uniquefunctionofupdatingsystem on-line,returningtofactoryisunnecessary♦Extra-short Extra-shortEvent Event EventDead Dead DeadZoneZone AV6416palmOTDRhasextra-shortevent deadzone,whichissuitable for testingshortopticalfiber andpigtailopticalfiber.♦high-speed high-speedauto auto automeasurementmeasurement Thefunctionofautomeasurementof AV6416palmOTDRmakes itunnecessarytooperatortoknowabout thefurtherdetailsofoperating.Simplyconnect thefiber,press[Start],thenthe resultisdisplayedinafewseconds,youcanviewthetrace andeventtable.♦High-speed High-speedauto auto autoanalyzationanalyzation AV6416can search andlocatetheeventsandfaultsintracerapidlyandprecisely,andthenlistsalleventsin eventable,soit'svery usefultomaintainerstoimprovingefficiencyandit'sunnecessarytoknowabouttherelative backgroundknowledge.♦strong strongfile file filemanagementmanagement AV6416offerspowerful functionoffile management.Besidessaving 、browsingordeletingfiles toorfrom USBstickandbuilt-inmemory,itcanbeconnected tolaser orinkjetprinter basedonPCLlanguage,andthetestingreportcan beprintedrapidlyandeasily.Inaddition,AV6416can communicate withPCusingActiveSync via USB cable,throughwhichthe filescan betranslatedrapidly.♦Convenient VFLThebuilt-in650nmvisual faultlocationisideal for easilyidentifyingbadsplice,badconnector,breakor macrobend.♦Communic Communication ation ationLightLight Check Whenmeasuringafiber inservice,the measuringresultbyanOTDRisnotprecise.To avoidtheinprecisionofmeasurement,thischeckfunctionchecksfor thepresenceof lightotherthantheOTDRopticalmeasurementpulse.♦Application:AV6416Palm OTDRismainlyusedtomeasureFTTx network,itprovidesa lowcost solutionforusers.AV6416offersthreemeasuringmodes:manualmode(includingreal timemodeandaverage mode),auto modeanddeadzonemode.Manualmeasurementmode:manualmodeissuitablefor skilled operatorwhoisfamiliar withtheinstrument.Inthismeasurementmode,toget moreaccurate results,real-timemode oraverage modecan beselectedif necessary.Inreal-timemode,thedynamic changesoffiber chaincanbedetectedtimely,itisvery usefulwhenyou needtowatchtheeffect andprocessoffiber beingsplicedorconnected.Inaverage measurementmode,the noiseintracecan besuppressed,andtheSNR(signalnoiseratio)is improved,therefore ，theresultismoreaccurate.Infact,themore average timesisexecuted,the morenoise in traceissuppressed,andthelonger timeisspentfor signalprocessing.Inpractice,theaverage timesshouldbeset properlyaccordingtonecessity.Automeasurementmode:theoptimizedmeasurementconditionsare setautomatically,it'sunnecessaryto operator toknowaboutthe complicatedbackgroundknowledgeandthefurther detailsofoperating.Inthismode,themoreaccurate resultscanbegained when proper averagetimesareset,but itwillincreasethe timeofsignal processing.Deadzonemode:thismodeissuitablefor testingopticalfiber withshortdistanceandthe optimized settings ofdistancerange,pulse widthandattenuatorcan beexecutedautomatically.Toget thebest result,theterminalreturnlossshouldbeguaranteedlessthan-40dB. Specifications:MODULE wavelength Applicable Fiber Dynamic Range1 Distance21011310nm/1550nm±20nm28/26dB21031550nm/1625nm±20nm26/24dB31051310nm/1550nm/1490nm±20nmSingle-mode28/26/24dB31021310nm/1550nm/1625nm±10nm28/26/25Measurement AccuracyEventDead ZoneSamplingResolution Distance RangePulse width Lossthreshold SamplingpointsLinearity 2±(1m+samplespace+0.0025%*measurementdistance)≤1.6m0.25,0.5,1,2,4,8,16m0.5,1,2,4,8,16,32,64,128,256km10,30,80,160,320,640,1280,5120,10240ns0.01dB655340.05dB/dBMemorycapacity IORsettingDisplayInterfaceVFLLanguage OpticalConnector Power SupplyDimensionsWeight ≥800Traces1.00000∼2.00000ColorLCD(touchscreen)USB,Min-USB650nm±10nm,2mW(typical);CW/1HzSimpleChinese/EnglishFC/UPC(universal connector)DC:15V∼20V(3A),(ACadapter100∼240V,50/60Hz,1.5A),Built-inLithiumbattery：4400mAh,7.4V,operatingtime≥10hours33210mm*100mm*60mmabout1kgNote1：pulsewidth10240ns,averagetimes≥300，SNR=1，23℃±2℃; Note2：Pulsewidth:10ns,terminalreflectionloss:≥40dB,typical;Note3：Lowbrightness,excludemeasuring.。