STPS60L15CW中文资料
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PF(AV)(W)
15.0
Fig. 2: Average forward current versus ambient temperature (δ=0.5).
IF(AV)(A)
35
δ = 0.5
12.5
Rth(j-a)=Rth(j-c)
δ = 0.2 δ = 0.1 δ=1
30 25 20
10.0
A2 K A1
DESCRIPTION Dual center tap schottky rectifier packaged in TO-247 and suited for N+1 redundancy operations, this device has an optimized forward voltage drop to reduce the power losses in the application. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Peak repetitive reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tcase = 115°C δ = 0.5 Per diode Per device Value 15 40 30 60 400 2 3 24000 - 65 to + 150 125 10000 A A A W °C °C V/µs Unit V A A TO-247
δ = 0.05
Rth(j-a)=15°C/W
7.5
15
5.0
T
2.5
10 5
IF(AV)(A)
0.0 0 5 10 15 20 25
δ=tp/T
30 35
tp
0
40
Tamb(°C)
0 25 50 75 100 125
Fig. 3: Normalized avalanche power derating versus pulse duration.
元器件交易网
®
STPS60L15CW
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAJOR PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS
s
1.0 0.9 0.8 0.7
δ = 0.5
0.6 0.5 0.4 0.3
IM t
δ = 0.2 δ = 0.1
150 100 50 0 1.E-03 1.E-02 1.E-01 1.E+00
TC=100°C
T
0.2
Single pulse
δ=0.5
t(s)
0.1 0.0 1.E-03 1.E-02
2 x 30 A 15 V 125°C 0.33 V
A1 K A2
s
s
s
VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK SIZE OPERATION JUNCTION TEMPERATURE: 125°C REVERSE VOLTAGE SUITED TO OR-ing OF 3V, 5V and 12V RAILS AVALANCHE CAPABILITY SPECIFIED
Pulse test : * tp = 380 µs, δ < 2%
Min.
Typ. 0.35
VR = VRRM IF = 30 A IF = 60 A IF = 30 A IF = 60 A 0.27 0.39
Max. 16 0.85 0.41 0.49 0.33 0.44
Unit mA A V
To evaluate the conduction losses use the following equation: P = 0.22 x IF(AV) + 0.0036 IF2(RMS) Fig. 1: Conduction losses versus average current).
s
s
s
Cooling method: C Recommended torque value: 0.8 m.N Maximum torque value: 1.0 m.N Ordering type Marking Package TO-247 Weight 4.4 g. Base qty 30 Delivery mode Tube
PARM(tp) PARM(1µs)
1
Fig. 4: Normalized avalanche power derating versus junction temperature.
PARM(tp) PARM(25°C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
IM(A)
500 450 400 350 300 250 200
TC=50°C TC=25°C
Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
C(nF)
10.0
F=1MHz VOSC=30mV Tj=25°C
1.E+03
Tj=125°C
Tj=100°C
1.E+02
Tj=75°C
Tj=50°C
1.E+01
Tj=25°C
VR(V)
1.E+00 0.0 2.5 5.0 7.5 10.0 12.5 15.0
1.0 1
VR(V)
10 100
Fig. 9: Forward voltage drop versus forward current.
tp(s)
1.0
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values).
IR(mA)
1.E+04
Fig. 8: Junction capacitance versus reverse voltage applied (typical values).
STPS60L15CW STPS60L15CW
s
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
tp(µs)
0
10 100 1000
Tj(°C)
0 25 50 75 100 125 150
2/4
元器件交易网
STPS60L15CW
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values).
PACKAGE MECHANICAL DATA TO-247 DIMENSIONS
V
REF.
Millimeters
Inches 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143
15.0
Fig. 2: Average forward current versus ambient temperature (δ=0.5).
IF(AV)(A)
35
δ = 0.5
12.5
Rth(j-a)=Rth(j-c)
δ = 0.2 δ = 0.1 δ=1
30 25 20
10.0
A2 K A1
DESCRIPTION Dual center tap schottky rectifier packaged in TO-247 and suited for N+1 redundancy operations, this device has an optimized forward voltage drop to reduce the power losses in the application. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Peak repetitive reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tcase = 115°C δ = 0.5 Per diode Per device Value 15 40 30 60 400 2 3 24000 - 65 to + 150 125 10000 A A A W °C °C V/µs Unit V A A TO-247
δ = 0.05
Rth(j-a)=15°C/W
7.5
15
5.0
T
2.5
10 5
IF(AV)(A)
0.0 0 5 10 15 20 25
δ=tp/T
30 35
tp
0
40
Tamb(°C)
0 25 50 75 100 125
Fig. 3: Normalized avalanche power derating versus pulse duration.
元器件交易网
®
STPS60L15CW
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAJOR PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS
s
1.0 0.9 0.8 0.7
δ = 0.5
0.6 0.5 0.4 0.3
IM t
δ = 0.2 δ = 0.1
150 100 50 0 1.E-03 1.E-02 1.E-01 1.E+00
TC=100°C
T
0.2
Single pulse
δ=0.5
t(s)
0.1 0.0 1.E-03 1.E-02
2 x 30 A 15 V 125°C 0.33 V
A1 K A2
s
s
s
VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK SIZE OPERATION JUNCTION TEMPERATURE: 125°C REVERSE VOLTAGE SUITED TO OR-ing OF 3V, 5V and 12V RAILS AVALANCHE CAPABILITY SPECIFIED
Pulse test : * tp = 380 µs, δ < 2%
Min.
Typ. 0.35
VR = VRRM IF = 30 A IF = 60 A IF = 30 A IF = 60 A 0.27 0.39
Max. 16 0.85 0.41 0.49 0.33 0.44
Unit mA A V
To evaluate the conduction losses use the following equation: P = 0.22 x IF(AV) + 0.0036 IF2(RMS) Fig. 1: Conduction losses versus average current).
s
s
s
Cooling method: C Recommended torque value: 0.8 m.N Maximum torque value: 1.0 m.N Ordering type Marking Package TO-247 Weight 4.4 g. Base qty 30 Delivery mode Tube
PARM(tp) PARM(1µs)
1
Fig. 4: Normalized avalanche power derating versus junction temperature.
PARM(tp) PARM(25°C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
IM(A)
500 450 400 350 300 250 200
TC=50°C TC=25°C
Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
C(nF)
10.0
F=1MHz VOSC=30mV Tj=25°C
1.E+03
Tj=125°C
Tj=100°C
1.E+02
Tj=75°C
Tj=50°C
1.E+01
Tj=25°C
VR(V)
1.E+00 0.0 2.5 5.0 7.5 10.0 12.5 15.0
1.0 1
VR(V)
10 100
Fig. 9: Forward voltage drop versus forward current.
tp(s)
1.0
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values).
IR(mA)
1.E+04
Fig. 8: Junction capacitance versus reverse voltage applied (typical values).
STPS60L15CW STPS60L15CW
s
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
tp(µs)
0
10 100 1000
Tj(°C)
0 25 50 75 100 125 150
2/4
元器件交易网
STPS60L15CW
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values).
PACKAGE MECHANICAL DATA TO-247 DIMENSIONS
V
REF.
Millimeters
Inches 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143
