CZRA3056中文资料
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Voltage: 11 - 100 V olts Power: 3.0 Watt
CZRA3011 Thru CZRA3100
Features
- For surf ace mounted applications in order to optimize board space - Low profile package - Built-in strain relief
- Glass passivated junction - Low inductance
- Excellent clamping capability
- Typical I less than 1uA above 11V D - High temperature soldering 260°C /10 seconds at terminals
- Plastic package has underwriters laboratory flammability classification 94V-O
Mechanical data
- Case: JEDEC DO-214A C , Molded plastic over passivated junction
- Terminals: Solder plated, solderable per MIL-STD-750, method 2026
- Polarity: Color band denotes positive end (cathode) except Bidirectional
- Standard Packaging: 12mm tape (EIA-481) - Weight: 0.002 ounce, 0.064 gram
Maximum Ratings and Electrical Characterics
ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise noted) (V F=1.2Volts Max, I F=500mA for all types.)
Rating and Characteristic Curves (CZRA3011 Thru CZRA3100)
Fig. 2-TYPICAL THERMAL RESPONSE L,
P.W. PULSE WIDTH (ms)
0.10.050.030.020.010.0050.0030.0020.0010.00050.00030.00020.0001 1
251020501002005001K
NOMINAL VZ (VOLTS)
Fig. 3-MAXIMUM SURGE POWER
Fig. 4-TYPICAL REVERSE LEAKAGE
VZ, ZENER VOLTAGE @IZT (VOLTS)
VZ, ZENER VOLTAGE @IZT (VOLTS)
Fig. 5 - UNI
T
S T
O 12 VOLT
S
Fig. 6 - UNI
T
S 10 T
O 100 VOLT
S
Rating and Characteristic Curves (CZRA3011 Thru CZRA3100)
VZ, ZENER VOLTAGE (VOLTS)
VZ, ZENER VOLTAGE (VOLTS)
L, LEAD LENGTH TO HEAT SINK (INCH)
F
ig. 9 -T
YPI
CAL T
HERMAL RESI
STANCE
APPLICATION NOTE:
Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended:
Lead Temperature, T L, should be determined from:
T L = θLA P D + T A
θLA is the lead-to-ambient thermal resistance (°C/W)
and PD is the power dissipation. The value for θLA will
vary and depends on the device mounting method.
θLA is generally 30-40 °C/W for the various chips and
tie points in common use and for printed circuit board
wiring.
The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of T L, the junction temperature may be determined by:
T J = T L + ∆T JL ∆T JL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses or from Figure 10 for dc power.
∆T JL = θLA P D
For worst-case design, using expected limits of Iz, limits of PD and the extremes of TJ (∆T JL ) may be estimated. Changes in voltage, Vz, can then be found from:
∆V = θVZ∆T J
θVZ , the zener voltage temperature coefficient, is
found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage
will vary with time and may also be affected significantly be the zener resistance. For best regulation, keep current excursions as low as possible.
Data of Figure 2 should not be used to compute surge capability. Surge limitations are given in Figure 3. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 3 be
exceeded.
COMCHIP
MDS0211015A Page 5 Surface Mount Zener Diode。
