处理机密标题MAZATROL MATRIX 维护资料概 要 本资料作为服务窗口资料整理MAZATROL MATRIX/MATRIX NEXUS 的机型构成概要和按机械的部品构成等内容。
登録番号 頁MTSL0Y-D001／改 定 履 歴副番 日付 改定内容＊ 2006年12月8日 新建。
Ａ 2007年2月23日 ·追加 “4. MAZATROL MATRIX NC系统图”。
·追加 “5. MAZATROL MATRIX NEXUS NC系统图”。
Ｂ 2007年10月18日 ·随着NC单元切换(FCU7-MA513-43/54)补记和修正。
·更新“6.MATRIX 按机械构成列表”。
C 2007年12月12日 ·追加“1.MAZATROL MATRIX/MATRIX NEXUS 构成列表”对象机型。
·更新 “2.MAZATROL MATRIX 服务部品列表”。
·更新 “3.MAZATROL MATRIX NEXUS 服务部品列表”。
·更新 “6.MATRIX 按机械构成列表”。
D 2008年5月1日 ·追加“1.MAZATROl MATRIX/MATRIX NEXUS 构成列表”中追加对象机型。
·更新“2.MAZATROL MATRIX 服务部品列表”。
·更新“6.MATRIX按机械构成一览”。
E 2008年7月2日 ·部分修正“1.MAZATROL MATRIX/MATRIX NEXUS 构成列表”对象机型。
·更新 “2.MAZATROL MATRIX 服务部品列表”。
·在“5.MAZATROL MATRIX NEXUS NC系统图”中追加注2。
·更新 “6.MATRIX 按机械构成列表”。
F 2008年12月2日 ·部分修改 “2.MAZATROL MATRIX 服务部品一览”的功能代码。
11.3 Gbps Optical Receiver Data Sheet ADN3010-11 Rev. A Document FeedbackInformation furnished by Analog Devices is believed to be accurate and reliable. However, noresponsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. T rademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, N orwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2015–2016 Analog Devices, Inc. All rights reserved. Technical Support FEATURESIntegrated SiGe PIN photodiode, transimpedance amplifier (TIA), and limiting amplifier (LA)Power monitor output: 1.0 A/W at O band wavelengths50 µm diameter germanium photodiodeInput sensitivityP OMA = −16.5 dBmP AVE = −17.3 dBm (ER = 6 dB)PRBS31 at 10.52 Gbps, BER = 10−12, λ = 1270 nm, 1290 nm,1300 nm, 1310 nm, and 1330 nmAntireflective coating (ARC) optimized to 1310 nmSingle 3.3 V supplyPower dissipation: 102 mWDifferential output swing: 460 mV p-pOn-chip power monitor functionDie size: 0.835 mm × 0.675 mmAPPLICATIONSOptical module receivers up to 11.3 GbpsShort range 10 Gb SONET, FC, Ethernet, CPRI, OBSAI, and LTE optical receiversCapable to be in ROSA, BOSA, or MCM packages FUNCTIONAL BLOCK DIAGRAMFigure 1.GENERAL DESCRIPTIONThe ADN3010-11 is a high speed optical receiver featuring a proprietary large area germanium photodiode monolithically integrated with a silicon TIA and LA. The integration of the photodiode eliminates bond wires between the diode and the TIA that provides guaranteed performance and improved manufacturing reliability. The 50 µm diameter photodetector enables an easy optical coupling design when aligned with a single mode fiber (SMF). With a 1310 nm optimized ARC, the ADN3010-11 supports 10GBASE-LR and other applications with extended data rates of up to 11.3 Gbps.Although the ADN3010-11 can operate in the wavelength range from 850 nm to 1565 nm, it has an antireflective coating (ARC) centered at 1310 nm and is characterized only at original band (O band) wavelengths (1270 nm, 1290 nm, 1300 nm, 1310 nm, and 1330 nm) in this data sheet.The power monitor pin provides either an output voltage or current that is proportional to the sensed average photocurrent. Typical power consumption of the ADN3010-11 is 102 mW from a single 3.3 V supply. When the output is saturated, it has a typical differential amplitude of 460 mV p-p at 10.52 Gbps. The ADN3010-11 is available in die form, and it is operational over the extended industrial temperature range of −40°C to+85°C.11858-1ADN3010-11Data SheetRev. A | Page 2 of 10TABLE OF CONTENTSFeatures .............................................................................................. 1 Applications ....................................................................................... 1 Functional Block Diagram .............................................................. 1 General Description ......................................................................... 1 Revision History ............................................................................... 2 Specifications ..................................................................................... 3 Absolute Maximum Ratings ............................................................ 4 ESD Caution .................................................................................. 4 Pin Configuration and Function Descriptions ............................. 5 Typical Performance Characteristics ............................................. 6 Theory of Operation .........................................................................7 Applications Information .................................................................8 Bonding ..........................................................................................8 Power Monitor (PM) Output Applications................................8 Power Monitor Output Estimation .............................................8 Outline Dimensions ..........................................................................9 Die Specifications and Assembly Recommendations ..............9 Ordering Guide .. (10)REVISION HISTORY9/2016—Rev. 0 to Rev. AChanges to Ordering Guide (10)1/2015—Revision 0: Initial VersionData SheetADN3010-11Rev. A | Page 3 of 10SPECIFICATIONST A = −40°C to +85°C, V CC = 3.0 V to 3.6 V , R L = 100 Ω differential (ac-coupled), λ = 1310 nm, unless otherwise noted. Table 1.ParameterTest Conditions/Comments Min Typ Max Unit OPTICAL INPUT CHARACTERISTICSData Rate 10.52 11.3 GbpsPhotodiode Diameter50 µm Input SensitivityPRBS31 at 10.52 Gbps, bit error rate (BER) = 10−12, λ = 1270 nm, 1290 nm, 1300 nm, 1310 nm, and 1330 nm Optical Modulation Amplitude (OMA) Power, P OMA T A = 25°C, V CC = 3.3 V−16.5 dBmT A = 85°C, V CC = 3.0 V−15.0dBm Optical Average Power, P AVE 1Extinction ratio (ER) = 6 dB, T A = 25°C, V CC = 3.3 V −17.3 dBm OUTPUT CHARACTERISTICSOutput Impedance Differential100 ΩEach output, single-ended 50 ΩDifferential Output Voltage Swing (Limited) Data rate = 10.52 Gbps 460 mV p-pData rate = 1.0 Gbps 520 mV p-p Rise/Fall Time20% to 80%30.5 ps Duty Cycle DistortionPRBS15 at 10.52 Gbps 0.82 ps Deterministic Jitter (Peak-to-Peak)PRBS15 at 10.52 Gbps22.8 ps Random Jitter (RMS)PRBS15 at 10.52 Gbps1.74 ps Power Monitor Output (PMO) in O Band 2λ = 1270 nm, 1290 nm, 1300 nm, 1310 nm, and 1330 nm 1.0 A/W Differential Common-Mode VoltageOUT+ and OUT− each dc-coupled 50 Ω to V CC V CC − 0.113 V DC CHARACTERISTICS Supply Voltage, V CC 3.0 3.3 3.6 V Supply Current, I CC31 49 mA PMO Slope Voltage mode, open circuit voltage output (V OC ) 730 µV/µWCurrent mode, short-circuit current output (I SC ) 0.73 µA/µW PMO Offset No optical input, voltage mode 32 mV InterceptionNo optical input, current mode 32 µA OPERATING TEMPERATURE RANGE−40+85°C1From a known OMA sensitivity and optical ER, P AVE sensitivity can be calculated with P AVE (dBm) = P OMA (dBm) + 10log((10(ER/10) + 1)/(2 × (10(ER/10) − 1))) where P OMA = −16.5 dBm and ER = 6 dB. 2O band wavelength range is 1260 nm to 1360 nm.ADN3010-11Data SheetRev. A | Page 4 of 10ABSOLUTE MAXIMUM RATINGSTable 2.Parameter Rating Supply Voltage4.5 V Optical Input Peak Power10 dBm Maximum Voltage to All Input and Output Signal PinsV CC + 0.4 V Minimum Voltage to All Input and Output PinsGND − 0.4 V Storage Temperature Range−65°C to +125°C Die Attach Temperature (<30 sec) 410°C Junction Temperature150°CStresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability.Data SheetADN3010-11Rev. A | Page 5 of 10PIN CONFIGURATION AND FUNCTION DESCRIPTIONSFigure 2. Pad ConfigurationTable 3. Pad Function DescriptionsPad No. Mnemonic X (mm)1 Y (mm)1 Description1 GND 0.300 0.225 Amplifier Ground.2 VCC 0.150 0.225 Output Stage 3.3 V Supply. 3 GND −0.150 0.225 Amplifier Ground.4 VCC −0.300 0.225 Input Amplifier 3.3 V Supply. 5 PM −0.300 −0.225 Power Monitor Output.6 GND −0.150 −0.225 Amplifier Ground.7 NC 0 −0.225 No Connection. Do not bond to this pad. 8 VCC 0.150 −0.225 Output Stage 3.3 V Supply. 9 GND 0.300 −0.225 Amplifier Ground.10 OUT– 0.300 −0.075 CML, Negative Output. AC coupling is recommended. 11 OUT+ 0.300 0.075 CML, Positive Output. AC coupling is recommended.PD −0.140 0 Photodiode.1Referenced to die center.11858-002ADN3010-11Data SheetRev. A | Page 6 of 10TYPICAL PERFORMANCE CHARACTERISTICST A = 25°C, V CC = 3.3 V , R LOAD = 100 Ω differential (ac-coupled), λ = 1310 nm, unless otherwise noted.Figure 3. BER Sensitivity at 10.52 Gbps vs. OMAat Various Temperatures and SuppliesFigure 4. PM Current Output vs. Input Optical Average PowerFigure 5. Power Monitor Output at Various Temperatures and SuppliesFigure 6. I CC vs. P AVE at Various Temperatures and SuppliesFigure 7. OMA Sensitivity vs. Data RateFigure 8. Power Monitor Output at Various Wavelengths,T A = 85°C, V CC = 3.0 V10–6 10–7 10–8 10–910–10 10–11 10–1210–5 10–4–21–20–19–18–17–16–15B I T E R R O R R A T E S E N S I T I V I T YOMA (dBm)11858-004501001502002503003504000100200300400500P M C U R R E N T O U T P U T (µA )INPUT OPTICAL AVERAGE POWER (µW)11858-0050.50.60.70.80.91.01.11.205101520253035P M O (A /W )DEVICES 11858-00629.029.530.030.531.031.532.032.533.033.534.0–25–20–15–10–50I C C (m A )P AVE (dBm)11858-007–18.5–18.0–17.5–17.0–16.5–16.0–15.5123456789101112O M A S E N S I T I V I T YDATA RATE (Gbps)11858-0080.50.60.70.80.91.01.11.216111621263136P M O (A /W )DEVICES11858-108Data SheetADN3010-11Rev. A | Page 7 of 10THEORY OF OPERATIONThe power monitor pin, PM, provides either a voltage or a current output that is proportional to the sensed average photocurrent. This feature allows the user to check how well a fiber or an optical coupling system is aligned to the ADN3010-11 photodetector (PD), which is typically useful during receiver optical subassembly (ROSA) manufacturing. To receive a PM pin signal from a transistor outline (TO)packaged ROSA, the TO header must support at least five pins. Figure 3 shows BER at 10.52 Gbps vs. input OMA at various temperatures and supplies. In Figure 3, fitting the curve to a best fit straight line allows extrapolation of the OMA sensitivi-ties at either BER = 10−10 or 10−12 from the measured OMA input data at a wider range of BER. The extrapolated BER = 10−10 sensitivity spans from −16.8 dBm to −17.4 dBm OMA and the BER = 10−12 sensitivity spans from −16.4 dBm to −16.8 dBm OMA at various temperature and supply voltages.Figure 6 shows the ADN3010-11 supply current, I CC , vs. optical average power, P AVE , at various temperatures and supply voltages.ADN3010-11Data SheetRev. A | Page 8 of 10APPLICATIONS INFORMATIONBONDINGFigure 9. Typical Bonding Diagram for 5-Pin Metal Header Package [TO-46]By using the recommended sequence in Table 4, the ESD or electronics stress introduced by a bonding tip can be reduced. Table 4. Recommended Bonding SequenceBonding Order Pad No. Mnemonic 1 9 GND 2 81 VCC 3 6 GND 4 5 PM 5 4 VCC 6 3 GND 7 2 VCC 8 1 GND 9 11 OUT+ 1010 OUT−1Bonding this pad is not necessary in a metal header package [TO].POWER MONITOR (PM) OUTPUT APPLICATIONSThe PM output can be set in either voltage output mode or current output mode for a mirrored photodidode current, I PD , which includes sensed photocurrent plus a preset offset current. Therefore, I PD is proportional to the sensed photodiode current. The setup of the V OC (open circuit voltage output) and I SC (short circuit current output) measurement is shown in Figure 10.Figure 10. Typical PM Circuit and Test SetupV OC and I SC are determined depending on the detection accuracy of I PD , as follows:V OC = 0.7 V at I PD = 1.0 mA ± 10%I SC = 700 µA at I PD = 1.0 mA ± 5%where I PD is proportional to the PD dark current and process tolerance.The PMO offset is composed of the ADN3010-11 photodiode dark current (mirrored) and a preset offset current (see Table 1 for details).POWER MONITOR OUTPUT ESTIMATIONThe PMO can be used to achieve optimal optical coupling. To use the PM pin properly, calibrate the integrated PD dark current out because the dark current is temperature and reversed bias dependent. In voltage mode,PMO = (V OC – V DK )/0.7/P AVE (optical power) In current mode,PMO = (I SC – I DK )/0.7/P AVE (optical power)where:PMO is the power monitor output (A/W) in voltage and current modes.V OC is the voltage output (mV) produced by an input light with an optical average power, P A VE .V DK is the voltage output (mV) at no light input,P A VE = 0 mW. P A VE is the average optical power of an input light to the receiver PD.I SC is the current output at an input light with P A VE = 100 mW. I DK is the current output (µA) at no light input, P A VE = 0 mW.11858-010Data SheetADN3010-11Rev. A | Page 9 of 10OUTLINE DIMENSIONSFigure 11. 11-Pad Bare Die [CHIP](C-11-1)Dimensions shown in millimetersFigure 12. Tape and Reel Outline DimensionsDimensions shown in millimetersDIE SPECIFICATIONS AND ASSEMBLY RECOMMENDATIONSTable 5. Die SpecificationsParameter ValueUnit Die Size0.835 (−0.04) × 0.675 (−0.04) mm Saw Blade Size0.04mm Die Grind Thickness 0.25 ± 0.0127 (10.0 ± 0.5 mils), 675 µm before backside grinding mm Bond Pad0.076 × 0.076 mmBackside Contact GroundNot applicable Passivation Openings 0.076 × 0.076 mm Photodiode Diameter0.05mmTable 6. Assembly RecommendationsAssembly Component Recommendation Die AttachGroundBonding Method Ball or wedge Bonding SequenceSee Table 412-08-2010-A(CIRCUIT SIDE)12-08-2010-ASECTION A-ADIRECTION OF FEED0.370.320.270.790.74ADN3010-11Data SheetRev. A | Page 10 of 10ORDERING GUIDEModel 1, 2Temperature Range Package Description Ordering Quantity Package Option ADN3010-11-50A-DF −40°C to +85°C 6-Inch Film Frame12,792 per film frameC-11-1 ADN3010-11-50A-RL7 −40°C to +85°C 11-Pad Bare Die [CHIP] Reel 5,000 per reelC-11-1 ADN3010-11-50A-WP−40°C to +85°C2” × 2” Waffle PackVariable per waffle pack 3C-11-11The ordering guide model is composed of the following fields: -11: data rate option, -50: the integrated photodiode diameter, A: the release version,-Rxx: the reel package option, -DF: film frame package option, and –WP: waffle package options. 2Contact Analog Devices, Inc., for more information about the 6-inch film frame or 2 in × 2 in waffle packs. 3Order quantity N dependent, N = 10 × i (i = 1, 2, …, 40).©2015–2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D11858-0-9/16(A)。
电感啸叫的原因及解决方法剖析【摘要】环形电感或工形电感啸叫问题，在稳压电源电路的设计经常遇到，根据稳压电源芯片的不同和外围电路的不同，解决方法也各不相同，本文档的宗旨是分析电感啸叫的根本原因，并综合各种不同的解决方法，供学习参考和借鉴。
【关键词】电感啸叫稳压电源电路1.引言H7710加密DTU 在摸底测试的时候发现过电感啸叫的现象，当时我们的处理方法是更换稳压电源电路输出部分的电感。
在实际的应用中，我们处理的方法可以有多种多样，现在就专门针对此类问题，探讨和汇总电感啸叫的根本原因及处理啸叫的方法。
2.稳压电源电路的一般设计2.1 34063降压稳压电路我们以较典型的34063减压稳压芯片电路设计的典型电路来举例，一一分析如下：不同品牌的34063最大工作频率不同，同样的外围电路，震荡频率也可能有差别，输出脉冲也有差异。
上图为34063 的标准设计图例。
我们现在就来分析下此电路关键器件对性能参数的影响，限流电阻R=R110//R111//R112//R113//R114.该电阻的作用是检测输出电流，当输出电流超过阀值时，将关闭输出电流。
根据负载瞬态最大电流的要求来调整限流电阻的取值，使最大输出电流不小于瞬态最大电流。
R115，R116调整输出电压Vo=1.25*（1+R116/R115）。
C112为内部震荡电路的频率调整电容，电容变小，则频率升高，一般情况，输出方波频率等于该震荡频率。
频率越高输出纹波越小。
L110电感量越大，则输出纹波越小，纹波的大小还会影响到输出电压调整的灵敏度，纹波越小，灵敏度越高，输出电压越稳定。
但是芯片的SE脚将出现杂乱的窄脉冲开关电流波形，L110电感容易啸叫。
纹波越大，输出灵敏度越低，输出电压稳定度降低，SE脚出现开关电流频率较稳定，L110电感不会啸叫。
C115的ESR越小，则允许流经电容的纹波电流越大，保证电容使用寿命的同时，纹波电压也越小。
同样电容的容量越大，纹波电压也越小。
