2SK2414
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0
2
4
6
8
10
VDS - Drain to Source Voltage - V
3
2SK2414, 2SK2414-Z
rth(t) - Transient Thermal Resistance - °C/W
1000 100 10 1
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth (ch-a) = 125 °C/W
±40
A
Total Power Dissipation (Tc = 25 ˚C) PT1
20
W
Total Power Dissipation (TA = 25 ˚C) PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150 °C
Rth (ch-c) = 6.25 °C/W
0.1
0.01 10 µ
100 µ
1m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
10
100
1000
|yfs| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100
6.5 ±0.2 5.0 ±0.2
4
1.5
+0.2 –0.1
2.3 ±0.2 0.5 ±0.1
1 23
1.6 ±0.2
1.3 MAX.
7.0 MIN. 5.5 ±0.2 13.7 MIN.
0.6 ±0.1 2.3 2.3
0.6 ±0.1
0.75
1. Gate 2. Drain 3. Source 4. Fin (Drain)
VDS = 10 V Pulsed
TA = –25 °C 25 °C 75 °C
125 °C 10
1
1
10
100
ID - Drain Current - A
RDS (on) - Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 120
MAX. 70 95 2.0
10 ±10
UNIT mΩ mΩ V S µA µA pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CONDITIONS VGS = 10 V, ID = 5.0 A VGS = 4 V, ID = 5.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5.0 A VDS = 60 V, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 5.0 A VGS(on) = 10 V VDD = 30 V RG = 10 Ω ID = 10 A VDD = 48 V VGS = 10 V IF = 10 A, VGS = 0 IF = 10 A, VGS = 0 di/dt = 50 A/µs
for high voltage switching applications.
FEATURES • Low On-Resistance
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
120
Pulsed
100
80 VGS = 4 V
60
VGS = 10 V
40
20
0 1
10
100
ID - Drain Current - A
4
VGS (off) - Gate to Source Cutoff Voltage - V
Pulsed ID = 5 A 100
80
60 ID = 5 A
40
20
0
5
10
15
20
VGS - Gate to Source Voltage - V
RDS (on) - Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
RG = 25 Ω
L
PG
50 Ω
VDD
VGS = 20 V → 0
ID VDD
IAS BVDSS VDS
Starting Tch
D.U.T.
PG.
RG
RG = 10 Ω
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
80
60
40
20
0 20 40 60 80 100 120 140 160 Tc - Case Temperature - °C
25 °C
125 °C
1 0 1 2 34 5 6 78 VGS - Gate to Source Voltage - V
ID - Drain Current - A
PT - Total Power Dissipation - W
2SK2414, 2SK2414-Z
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 24
VGS 0
t
t = 1 µs Duty Cycle ≤ 1 %
RL VDD
VGS Wave Form
ID Wave Form
VGS 10 % 0
ID
10 % 0
td (on)
VGS (on)
90 % ID
t t r
d (off)
90 %
90 % 10 % tf
ton
toff
Test Circuit 3 Gate Charge
20
16
12
8
4
0
20 40 60 80 100 120 140 160
Tc - Case Temperature - °C
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50
Pulsed VGS = 10 V 40
VGS = 6 V 30
VGS = 4 V
20
10
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±10
A
Drain Current (pulse)*
ID(pulse)
MP-3
+0.2 –0.1
6.5 ±0.2 5.0 ±0.2
4
1.5
2.3 ±0.2 0.5 ±0.1
1.0 MIN. 1.5 TYP. 0.5
ห้องสมุดไป่ตู้
10.0 MAX.
5.5 ±0.2
0.8 4.3 MAX.
12 3
12.0 MIN.
1.3 MAX.
2.3 2.3
0.9 0.8 MAX. MAX.
0.8
1. Gate 2. Drain 3. Source 4. Fin (Drain)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2414, 2SK2414-Z
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed
FORWARD BIAS SAFE OPERATING AREA 100
ID (pulse)
PW
=
10
µs
10
ID (DC)
µs 100
ID - Drain Current - A R
(at DVSG(Son)= L1i0mitV)ed
Power D1isms1sip0amt1ios0n0LmimDsiCted
• Low Ciss Ciss = 840 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings
QUALITY GRADE Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
