CSD-4M中文资料
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DPAK THYRISTOR CASE - MECHANICAL OUTLINE
LEAD CODE: 1) CATHODE 2) ANODE 3) GATE 4) ANODE MARKING CODE: FULL PART NUMBER
SYMBOL A B C D E F G H J K L M N
DPAK THYRISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=85°C) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power (tp=20µs) Average Gate Power Dissipation Peak Gate Current (tp=20µs) Critical Rate of Rise of On-State Current Storage Temperature Junction Temperature VDRM, VRRM IT(RMS) ITSM I 2t PGM PG (AV) IGM di/dt Tstg TJ CSD -4M 600 4.0 30 4.5 3.0 0.2 1.2 50 -40 to +150 -40 to +125 CSD -4N 800 UNITS V A A A2s W W A A/µs °C °C
R0 (20-May 2004)
DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.086 0.094 2.18 2.39 0.018 0.032 0.46 0.81 0.035 0.050 0.89 1.27 0.205 0.228 5.21 5.79 0.047 0.055 1.20 1.40 0.018 0.024 0.45 0.60 0.250 0.268 6.35 6.81 0.205 0.215 5.20 5.46 0.235 0.245 5.97 6.22 0.100 0.108 2.55 2.74 0.025 0.040 0.64 1.02 0.025 0.035 0.64 0.89 0.090 2.28 DPAK THYRISTOR (REV: R0)
元器件交易网
CSD-4M CSD-4N 4.0 AMP SCR 600 THRU 800 VOLTS
Central
TM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-4M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER
TYP
MAX 10 200
UNITS µA µA µA mA V V V/µs
20
38 0.25 0.55 1.6
200 2.0 0.8 1.8
R0 (20-May 2004)
元器件交易网
Centralຫໍສະໝຸດ TMSemiconductor Corp.
CSD-4M CSD-4N 4.0 AMP SCR 600 THRU 800 VOLTS
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM IDRM, IRRM IGT IH VGT VTM dv/dt Rated VDRM, VRRM, RGK=1KΩ Rated VDRM, VRRM, RGK=1KΩ, TC=125°C VD=12V, RL=10Ω IT=50mA, RGK=1KΩ VD=12V, RL=10Ω ITM=8.0A, tp=380µs VD=2 /3 VDRM, RGK=1KΩ, TC=125°C 10