FGA25N120ANTD
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VCC = 600 V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C
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50 60 190 100 4.1 0.96 5.06 50 60 200 154 4.3 1.5 5.8 200 15 100
-90 -180 6.2 1.5 7.7 ----6.9 2.4 9.3 300 23 150
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2 FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT
Electrical Characteristics of DIODE T
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc
Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature
Typ.
----
Max.
0.4 2.0 40
Units
°C/W °C/W °C/W
©2007 Fairchild Semiconductor Corporation
1
FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT
C
G
TO-3PN
G C E
E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM IF IFM PD TJ Tstg TL Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current
Figure 1. Typical Output Characteristics
180 160 140
Figure 2. Typical Saturation Voltage Characteristics
120 Common Emitter VGE = 15V TC = 25°C TC = 125°C 80
Figure 4. Saturation Voltage vs. VGE
20 Common Emitter TC = -40°C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
16
2.5
40A
12
2.0
IC = 25A
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT
u
July, 2007
FGA25N120ANTD/FGA25N120ANTD_F109
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • Extremely enhanced avalanche capability
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge
Thermal Characteristics
Symbol
RθJC RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient
Min.
---------
Typ.
2.0 2.1 235 300 27 31 3130 4650
Max.
3.0 -350 -40 -4700 --
Units
V
Diode Reverse Recovery Time
IF = 25A dI/dt = 200 A/µs
ns
Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
8 40A 25A
4
IC = 12.5A
1.5 25 50 75 100 125
0 0 4 8 12 16 20
Case Temperature, TC [°C]
Gate-Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. VGE
20
Figure 6. Saturation Voltage vs. VGE
Symbol
VFM trr Irr Qrr
C
= 25°C unless otherwise noted
Parameter
Diode Forward Voltage IF = 25A
Test Conditions
TC = 25°C TC = 125°C TC = 25°C TC = 125°C TC = 25°C TC = 125°C TC = 25°C TC = 125°C
Package Marking and Ordering Information
Device Marking
FGA25N120ANTD
Device
FGA25N120ANTD
Package
TO-3P
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics of the IGBT
(Note 1)
Description
Collector-Emitter Voltage @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C
FGA25N120ANTD
1200 ± 20 50 25 90 25 150 312 125 -55 to +150 -55 to +150 300
IC = 12.5A
VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
---
---
3 ± 250
mA nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 25mA, VCE = VGE IC = 25A, VGE = 15V IC = 25A, VGE = 15V, TC = 125°C IC = 50A, Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---3700 130 80 ---pF pF pF VGE = 15V 3.5 ---5.5 2.0 2.15 2.65 7.5 2.5 --V V V V
20
Common Emitter TC = 25°C
Common Emitter TC = 125°C
Collector-Emitter Voltage, VCE [V]
16
Collector-Emitter Voltage, VCE [V]
16
1212ຫໍສະໝຸດ 8 40A 25A8
4
40A 25A
4
IC = 12.5A
TC = 25°C
20V 17V
15V 12V 10V
100
Collector Current, IC [A]
120 100 80 60 40 7V 20 VGE = 6V 0 0 2 4 6 8 10 8V 9V
Collector Current, IC [A]
60
40
20
0 0 1 2 3 4 5
tm
Description
Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
