TPS62043DGQ中文资料

ORDERING INFORMATION6Figure 9Ch1 100 mV/div Ch4 10 mV/div2 ms/divV DDV OUTV o l t a g e − Vt − Time − msPACKAGING INFORMATION Orderable DeviceStatus (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)TPA6204A1DRBACTIVE SON DRB 8121Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR TPA6204A1DRBG4ACTIVE SON DRB 8121Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR TPA6204A1DRBRACTIVE SON DRB 83000Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR TPA6204A1DRBRG4ACTIVE SON DRB 83000Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR (1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS)or Green (RoHS &no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green (RoHS &no Sb/Br):TI defines "Green"to mean Pb-Free (RoHS compatible),and free of Bromine (Br)and Antimony (Sb)based flame retardants (Br or Sb do not exceed 0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI basesits knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.PACKAGE OPTION ADDENDUM 19-May-2005Addendum-Page 1IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. T esting and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. T o minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. 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Figure 10t – Time – µs12345678910Figure 1150100150200250300350400450500V OENI It – Time – µsV I = 2.4 VFigure 12LOAD TRANSIENT RESPONSE100 mA10 mA501001502002503003.263.283.303504004505003.24t – Time – µsV I = 2.4 V012345678910t – Time – msFigure 13元器件交易网IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,enhancements, improvements, and other changes to its products and services at any time and to discontinueany product or service without notice. Customers should obtain the latest relevant information before placingorders and should verify that such information is current and complete. All products are sold subject to TI’s termsand conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TIdeems necessary to support this warranty. Except where mandated by government requirements, testing of allparameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design. Customers are responsible fortheir products and applications using TI components. To minimize the risks associated with customer productsand applications, customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right,copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or processin which TI products or services are used. Information published by TI regarding third–party products or servicesdoes not constitute a license from TI to use such products or services or a warranty or endorsement thereof.Use of such information may require a license from a third party under the patents or other intellectual propertyof the third party, or a license from TI under the patents or other intellectual property of TI.Reproduction of information in TI data books or data sheets is permissible only if reproduction is withoutalteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproductionof this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable forsuch altered documentation.Resale of TI products or services with statements different from or beyond the parameters stated by TI for thatproduct or service voids all express and any implied warranties for the associated TI product or service andis an unfair and deceptive business practice. TI is not responsible or liable for any such statements.Mailing Address:Texas InstrumentsPost Office Box 655303Dallas, Texas 75265Copyright 2001, Texas Instruments Incorporated。

本说明书由天津曙光敬业科技有限公司翻译This manual has been translated by Tianjin Aurora UA V Technology Co.,Ltd.尊敬的用户，欢迎购买我们的数字开关。

此产品是世界上第一个多功能开关系统，由PowerBox Systems GmbH研发、生产。

它专门使用轻巧的锂电池，在接收机电源供应的开关安全性上有很大改善。

此产品外壳坚固并带有一个自锁电子开关、一个高性能线性IC控制稳压电路和一个电压监测器。

此电压监测器使用一个两芯锂电池和一个五芯镍镉/镍氢电池组，分四个阶段进行监测。

重要的构造特点：坚固的塑料外壳（材质为30%的玻璃纤维）、两根连接导线、一根横截面为0.34mm2的硅导线直接焊接在焊接板上（如在同一直线上），焊接板封装在专用的胶层中以防振、SMT安装电路板、编程控制的线路转换程序以及两个散热片（其中一个焊接在电路板上）。

我们建议将数字开关用于以下类型的模型：-带有五个标准尺寸舵机的中小型模型飞机-F3A模型（非常适用于此模型）-带有八个或八个以上舵机的滑翔机，依据舵机尺寸、模型尺寸和飞行类型（热飞行或特技飞行）-电力驱动或光驱动的直升机，转子直径为1.30m，最多带有五个舵机-电力驱动或光驱动的RC模型汽车-模型船-汽油机点火系统的电压为四芯镍镉电池的电压（DA或其它）操作：数字开关由一个按钮控制，操作起来非常简便。

此按钮也用来设置想要安装的电池的开关。

在一般情况下，此按钮负责将开关信号传输给电子开关；按钮本身与实际的电流转换没有关系。

将一个两芯锂电池或一个五芯镍镉/镍氢电池与电池导线连接。

此导线装有一个极化通用接头。

注意，应将电池极性连接正确。

注意：将电池极性接反会损坏开关中的集成稳压器IC。

连接好电池后，LED指示灯会亮起来并显示电池的电压：绿色表示电压正常，橙色表示半放电，红色表示电量不足。

当自锁电子开关连接到电源时，其默认状态为“ON”。

HGTG20N60A4, HGTP20N60A4600V, SMPS Series N-Channel IGBTsThe HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much loweron-state voltage drop varies only moderately between 25o C and 150o C.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.Formerly Developmental Type TA49339.Symbol Features•>100kHz Operation at 390V, 20A•200kHz Operation at 390V, 12A•600V Switching SOA Capability•Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T J = 125o C •Low Conduction Loss•Temperature Compensating SABER™ Model•Related Literature-TB334 “Guidelines for Soldering Surface MountComponents to PC BoardsPackagingJEDEC TO-220AB ALTERNATE VERSIONJEDEC STYLE TO-247Ordering InformationPART NUMBER PACKAGE BRAND HGTP20N60A4TO-220AB20N60A4HGTG20N60A4TO-24720N60A4 NOTE:When ordering, use the entire part number.CEGGCE COLLECTOR(FLANGE)COLLECTOR(FLANGE)CEGAbsolute Maximum Ratings T C = 25o C, Unless Otherwise SpecifiedHGTG20N60A4, HGTP20N60A4UNITS Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV CES600V Collector Current ContinuousAt T C = 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I C2570A At T C = 110o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I C11040A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I CM280A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GES±20V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GEM±30V Switching Safe Operating Area at T J = 150o C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA100A at 600VPower Dissipation Total at T C = 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P D290W Power Dissipation Derating T C > 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32W/o C Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T J, T STG-55 to 150o C Maximum Lead Temperature for SolderingLeads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T PKG 300260o Co CCAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.NOTE:1.Pulse width limited by maximum junction temperature.Electrical Specifications T J = 25o C, Unless Otherwise SpecifiedPARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BV CES I C = 250µA, V GE = 0V600--V Emitter to Collector Breakdown Voltage BV ECS I C = 10mA, V GE = 0V15--V Collector to Emitter Leakage Current I CES V CE = 600V T J = 25o C--250µAT J = 125o C-- 2.0mACollector to Emitter Saturation Voltage V CE(SAT)I C = 20A,V GE = 15V T J = 25o C- 1.8 2.7V T J = 125o C- 1.6 2.0VGate to Emitter Threshold Voltage V GE(TH)I C = 250µA, V CE = 600V 4.5 5.57.0V Gate to Emitter Leakage Current I GES V GE = ±20V--±250nA Switching SOA SSOA T J = 150o C, R G = 3Ω, V GE = 15VL = 100µH, V CE = 600V100--A Gate to Emitter Plateau Voltage V GEP I C = 20A, V CE = 300V-8.6-VOn-State Gate Charge Q g(ON)I C = 20A,V CE = 300V V GE = 15V-142162nC V GE = 20V-182210nCCurrent Turn-On Delay Time t d(ON)I IGBT and Diode at T J = 25o CI CE = 20AV CE = 390VV GE =15VR G = 3ΩL = 500µHTest Circuit (Figure 20)-15-nsCurrent Rise Time t rI-12-ns Current Turn-Off Delay Time t d(OFF)I-73-ns Current Fall Time t fI-32-ns Turn-On Energy (Note 3)E ON1-105-µJ Turn-On Energy (Note 3)E ON2-280350µJ Turn-Off Energy (Note 2)E OFF-150200µJCurrent Turn-On Delay Time t d(ON)I IGBT and Diode at T J = 125o C I CE = 20A V CE = 390V V GE = 15V R G = 3ΩL = 500µHTest Circuit (Figure 20)-1521ns Current Rise Timet rI -1318ns Current Turn-Off Delay Time t d(OFF)I -105135ns Current Fall Time t fI -5573ns Turn-On Energy (Note 3)E ON1-115-µJ Turn-On Energy (Note 3)E ON2-510600µJ Turn-Off Energy (Note 2)E OFF -330500µJThermal Resistance Junction To Case R θJC--0.43o C/WNOTES:2.Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (I CE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.3.Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. E ON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T J as the IGBT. The diode type is specified in Figure 20.Electrical SpecificationsT J = 25o C, Unless Otherwise Specified (Continued)PARAMETERSYMBOL TEST CONDITIONSMIN TYP MAX UNITS Typical Performance CurvesUnless Otherwise SpecifiedFIGURE 1.DC COLLECTOR CURRENT vs CASETEMPERATUREFIGURE 2.MINIMUM SWITCHING SAFE OPERATING AREAFIGURE 3.OPERATING FREQUENCY vs COLLECTOR TOEMITTER CURRENTFIGURE 4.SHORT CIRCUIT WITHSTAND TIMET C , CASE TEMPERATURE (o C)I C E , D C C O L L E C T O R C U R R E N T (A )502008040602575100125150100V GE = 15VPACKAGE LIMITDIE CAPABILITYV CE , COLLECTOR TO EMITTER VOLTAGE (V)700600I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )2030040020010050060008010040120T J = 150o C, R G = 3Ω, V GE = 15V, L = 100µHf M A X , O P E R A T I N G F R E Q U E N C Y (k H z )5I CE , COLLECTOR TO EMITTER CURRENT (A)40300501020500T J = 125o C, R G = 3Ω, L = 500µH, V CE = 390V 1004030f MAX1 = 0.05 / (t d(OFF)I + t d(ON)I )R ØJC = 0.43o C/W, SEE NOTES P C = CONDUCTION DISSIPATION(DUTY FACTOR = 50%)f MAX2 = (P D - P C ) / (E ON2 + E OFF )T C V GE 15V75o CV GE , GATE TO EMITTER VOLTAGE (V)I S C , P E A K S H O R T C I R C U I T C U R R E N T (A )t S C , S H O R T C I R C U I T W I T H S T A N D T I M E (µs )10111215021010025035045014131446812150200300400V CE = 390V, R G = 3Ω, T J = 125o Ct SCI SCFIGURE 5.COLLECTOR TO EMITTER ON-STATE VOLTAGEFIGURE 6.COLLECTOR TO EMITTER ON-STATE VOLTAGEFIGURE 7.TURN-ON ENERGY LOSS vs COLLECTOR TOEMITTER CURRENT FIGURE 8.TURN-OFF ENERGY LOSS vs COLLECTOR TOEMITTER CURRENTFIGURE 9.TURN-ON DELAY TIME vs COLLECTOR TOEMITTER CURRENT FIGURE 10.TURN-ON RISE TIME vs COLLECTOR TOEMITTER CURRENT0.8 1.2V CE , COLLECTOR TO EMITTER VOLTAGE (V)I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )20401.62.03.28060T J = 125o C T J = 150o CPULSE DURATION = 250µsDUTY CYCLE < 0.5%, V GE = 12V 100T J = 25o C0.4 2.4 2.8I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )V CE , COLLECTOR TO EMITTER VOLTAGE (V)DUTY CYCLE < 0.5%, V GE = 15V PULSE DURATION = 250µs T J = 150o CT J = 25o CT J = 125o C204080601000.8 1.2 1.6 2.00.4 2.4 2.8E O N 2, T U R N -O N E N E R G Y L O S S (µJ )1000600I CE , COLLECTOR TO EMITTER CURRENT (A)8004001200015102025303540T J = 125o C, V GE = 12V, V GE = 15VR G = 3Ω, L = 500µH, V CE = 390VT J = 25o C, V GE = 12V , V GE = 15V20051400600I CE , COLLECTOR TO EMITTER CURRENT (A)E OF F , T U R N -O F F E N E RG Y L O S S (µJ )100400200500700800T J = 25o C, V GE = 12V OR 15VT J = 125o C, V GE = 12V OR 15V300 R G = 3Ω, L = 500µH, V CE = 390V 151020253035405I CE , COLLECTOR TO EMITTER CURRENT (A)t d (O N )I ,T U R N -O N D E L A Y T I M E (n s )81416182022151020253035405T J = 25o C, T J = 125o C, V GE = 15VT J = 25o C, T J = 125o C, V GE = 12VR G = 3Ω, L = 500µH, V CE = 390V 1210I CE , COLLECTOR TO EMITTER CURRENT (A)t r I ,R I S E T I M E (n s )4820161224363228R G = 3Ω, L = 500µH, V CE = 390VT J = 25o C, T J = 125o C, V GE = 12VT J = 25o C OR T J = 125o C, V GE = 15V151020253035405FIGURE 11.TURN-OFF DELAY TIME vs COLLECTOR TOEMITTER CURRENT FIGURE 12.FALL TIME vs COLLECTOR TO EMITTERCURRENTFIGURE 13.TRANSFER CHARACTERISTICFIGURE 14.GATE CHARGE WAVEFORMSFIGURE 15.TOTAL SWITCHING LOSS vs CASETEMPERATUREFIGURE 16.TOTAL SWITCHING LOSS vs GATE RESISTANCE806070I CE , COLLECTOR TO EMITTER CURRENT (A)t d (O F F )I , T U R N -O F F D E L A Y T I M E (n s )12010011090V GE = 12V, V GE = 15V , T J = 25o CV GE = 12V, V GE = 15V , T J = 125o CR G = 3Ω, L = 500µH, V CE = 390V151020253035405I CE , COLLECTOR TO EMITTER CURRENT (A)t f I , F A L L T I M E (n s )16322448644056R G = 3Ω, L = 500µH, V CE = 390V7280151020253035405T J = 125o C, V GE = 12V OR 15VT J = 25o C, V GE = 12V OR 15V I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )801207891012V GE , GATE TO EMITTER VOLTAGE (V)111602002406PULSE DURATION = 250µsDUTY CYCLE < 0.5%, V CE = 10V T J = 125o CT J = -55o CT J = 25o C40V G E , G A T E T O E M I T T E R V O L T A G E (V )Q G , GATE CHARGE (nC)2140410I G(REF) = 1mA, R L = 15Ω, T J = 25o CV CE = 200V V CE = 400V681216V CE = 600V20406080120100140160I CE = 10A00.20.45075100T C , CASE TEMPERATURE (o C)0.61.0125251501.80.8E T O T A L , T O T A L S W I T C H I N G E N E R G Y L O S S (m J )E TOTAL = E ON2 + E OFFR G = 3Ω, L = 500µH, V CE = 390V, V GE = 15V 1.41.21.6I CE = 30AI CE = 20A0.110100R G , GATE RESISTANCE (Ω)131000E T O T A L , T O T A L S W I T C H I N G E N E R G Y L O S S (m J )10T J = 125o C, L = 500µH, V CE = 390V, V GE = 15V E TOTAL = E ON2 + E OFF I CE = 10AI CE = 20A I CE = 30AFIGURE 17.CAPACITANCE vs COLLECTOR TO EMITTERVOLTAGE FIGURE 18.COLLECTOR TO EMITTER ON-STATE VOLTAGEvs GATE TO EMITTER VOLTAGEFIGURE 19.IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASETest Circuit and WaveformsFIGURE 20.INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21.SWITCHING TEST WAVEFORMSV CE , COLLECTOR TO EMITTER VOLTAGE (V)C , C A P A C I T A N C E (n F )2040608010013452FREQUENCY = 1MHzC IESC OES C RES V GE , GATE TO EMITTER VOLTAGE (V)891.710121.82.01.911131415162.12.2V C E , C O L L E C T O R T O E M I T T E R V O L T A G E (V )I CE = 30A I CE = 20AI CE = 10ADUTY CYCLE < 0.5%, T J = 25o C PULSE DURATION = 250µs,t 1,RECTANGULAR PULSE DURATION (s)Z θJ C ,N O R M A L I Z E D T H E R M A L R E S P O N S E10-210-110010-510-310-210-110010-4t 1t 2P DDUTY FACTOR, D = t 1 / t 2PEAK T J = (P D X Z θJC X R θJC ) + T CSINGLE PULSE0.10.20.50.050.010.02R G = 3ΩL = 500µHV DD = 390V+-HGTG20N60A4D DUTDIODE TA49372t fIt d(OFF)It rI t d(ON)I10%90%10%90%V CEI CEV GEE OFFE ON2Handling Precautions for IGBTsInsulated Gate Bipolar T ransistors are susceptible togate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken:1.Prior to assembly into a circuit, all leads should be keptshorted together either by the use of metal shortingsprings or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent.2.When devices are removed by hand from their carriers,the hand being used should be grounded by any suitable means - for example, with a metallic wristband.3.Tips of soldering irons should be grounded.4.Devices should never be inserted into or removed fromcircuits with power on.5.Gate Voltage Rating - Never exceed the gate-voltagerating of V GEM. Exceeding the rated V GE can result in permanent damage to the oxide layer in the gate region.6.Gate Termination - The gates of these devices areessentially capacitors. Circuits that leave the gateopen-circuited or floating should be avoided. Theseconditions can result in turn-on of the device due tovoltage buildup on the input capacitor due to leakagecurrents or pickup.7.Gate Protection - These devices do not have an internalmonolithic Zener diode from gate to emitter. If gateprotection is required an external Zener is recommended.Operating Frequency InformationOperating frequency information for a typical device (Figure3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (I CE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows f MAX1 or f MAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.f MAX1 is defined by f MAX1 = 0.05/(t d(OFF)I+ t d(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. t d(OFF)I and t d(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM.f MAX2 is defined by f MAX2 = (P D - P C)/(E OFF + E ON2). The allowable dissipation (P D) is defined by P D = (T JM - T C)/RθJC. The sum of device switching and conduction losses must not exceed P D. A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated byP C=(V CE x I CE)/2.E ON2 and E OFF are defined in the switching waveforms shown in Figure 21. E ON2 is the integral of the instantaneous power loss (I CE x V CE) during turn-on andE OFF is the integral of the instantaneous power loss(I CE x V CE) during turn-off. All tail losses are included in the calculation for E OFF; i.e., the collector current equals zero (I CE = 0).分销商库存信息: FAIRCHILD HGTP20N60A4。

ORDERING INFORMATION T AFigure 1050 µs/divV I = 3.6 V V O = 1.8 VPWM/PFM OperationFigure 11500 ns/divFigure 12POWER SAVE MODE2.5 µs/divFigure 13START-UP200 µs/divV I = 3.6 V V O = 1.8 V I O = 1.1 A元器件交易网IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,enhancements, improvements, and other changes to its products and services at any time and to discontinueany product or service without notice. Customers should obtain the latest relevant information before placingorders and should verify that such information is current and complete. All products are sold subject to TI’s termsand conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. T esting and other quality control techniques are used to the extent TIdeems necessary to support this warranty. Except where mandated by government requirements, testing of allparameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design. Customers are responsible fortheir products and applications using TI components. T o minimize the risks associated with customer productsand applications, customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right,copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or processin which TI products or services are used. Information published by TI regarding third-party products or servicesdoes not constitute a license from TI to use such products or services or a warranty or endorsement thereof.Use of such information may require a license from a third party under the patents or other intellectual propertyof the third party, or a license from TI under the patents or other intellectual property of TI.Reproduction of information in TI data books or data sheets is permissible only if reproduction is withoutalteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproductionof this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable forsuch altered documentation.Resale of TI products or services with statements different from or beyond the parameters stated by TI for thatproduct or service voids all express and any implied warranties for the associated TI product or service andis an unfair and deceptive business practice. TI is not responsible or liable for any such statements.Following are URLs where you can obtain information on other Texas Instruments products and applicationsolutions:Products ApplicationsAmplifiers Audio /audioData Converters Automotive /automotiveDSP Broadband /broadbandInterface Digital Control /digitalcontrolLogic Military /militaryPower Mgmt Optical Networking /opticalnetworkMicrocontrollers Security /securityTelephony /telephonyVideo & Imaging /videoWireless /wirelessMailing Address:Texas InstrumentsPost Office Box 655303 Dallas, Texas 75265Copyright 2004, Texas Instruments Incorporated。

使用Spang 853型数字式可功硅功率控制器有 效 减 少 制 造 过 程 中 的 电 能 消 耗在美国，数字式可控硅调功器的广泛使用，为工业加热领域的用户节省了大量电能费用，这些对数字化设备的投资所增加的费用可以在一到两个月的运行中所节省的电费中收回。

这里的例子是，数字式可控硅功率控制技术成功地在玻璃镀膜这类深加工项目中得到使用。

在一个由两台新电炉组成的镀膜玻璃设备的扩建项目中使用了数字化技术，直接导致每月电费成本节省超过2000美元。

数字式可控硅功率控制器使用过零控制模式带变压器从而驱动加热元件。

传统设计中为了避免因为变压器的磁饱和损坏变压器，只能使用移相控制模式为加热元件供电。

背景说明Signature 真空系统公司得到的一个合同中，要为用户的扩建工程项目建造两台真空电炉。

为了最大限度地节约电能，Signature 真空系统公司决定采用过零触发的功率控制器来控制电炉的热量输入。

控制器选择了世邦电力电子公司制造的853型三相数字式交流功率控制器 (见Fig.1).选择Spang 公司的853型数字式功率控制器的原因之一是它能够任意选择使用移相点火或过零点火模式以及自动组合峰值功率优化。

这样的选择可以保证在开始时使用（传统的）移相点火方式，以后再改为过零点火方式工作。

这种灵活性让我们很容易对不同的控制模式产生的系统电气参数和最终的电费进行对比。

用户已经习惯了过去的移相控制的系统。

采用多模式的853型数字式功率控制器，电炉控制系统允许操作人员使用习惯的移相控制模式，也可以任意切换到过零点火控制模式。

这种转换可以通过Modbus 串行接口的本地控制器或在控制室中通过总线连接的软件实现。

这中灵活性让电炉操作人员能够读取移相控制模式下的电流，电压值，然后再切换到过零控制模式，看到减小了的电流，电压值，充分理解节能的效果。

电炉加热区的额定规格如下:• 输入电压: 480 V AC• 输出电压: 45 V AC• 输出电流: 2,566 A AC• 额定功率: 200kW 使用镍鉻合金加热元件 三套加热系统的 交流动力中心图1. Spang 853系列数字式可控硅调功器每台电炉包括两套200KW 的加热回路，两台电炉共4套加热系统合计总功率800 kW. 电炉运行时，大多数运行时间的实际功率消耗约为额定功率的50%. 这种电炉每个加热区使用一个独立的动力系统。

大功率高压固态软启动柜参数
大功率高压固态软启动柜的参数可以因制造商和具体应用而异。

以下是一些可能的参数，但请注意这些参数仅供参考，具体参数可能会因产品型号和供应商而有所不同：
额定电压（Rated Voltage）：指启动柜设计的工作电压范围，例如380V、660V等。

额定电流（Rated Current）：指启动柜的最大额定电流容量，例如100A、200A等。

额定功率（Rated Power）：启动柜能够承受的最大功率负载，通常以千瓦（kW）为单位。

控制电压（Control Voltage）：指启动柜控制系统的工作电压，通常为低电压，如24V DC。

启动方式（Starting Method）：启动柜可采用不同的启动方式，如电压斜升启动、电流限制启动等。

保护功能（Protection Functions）：启动柜通常配备多种保护功能，如过流保护、过载保护、短路保护等。

通信接口（Communication Interface）：某些启动柜可能具备通信接口，用于与其他系统或监控设备进行通信和数据交换。

这些参数只是一些常见的示例，实际的启动柜参数可能会更加复
杂和多样化，取决于具体的应用需求和供应商的设计。

如果您需要获取特定型号或供应商的启动柜参数，建议直接咨询相关的供应商、制造商或参考产品文档。

技术参数工作电压：DC12V/23A工作频率：315MHz工作电流：≤30mA传输距离：500-1500米空旷直线距离振荡电阻： 2.2M（若需3.3M 1.5M 4.7M等则在订货时请说明）编码类型：固定码编码芯片： PT2264调制方式：ASK调幅工作温度：-10℃~+70℃尺寸：127×41×20mm产品介绍手感良好、外观精致；声表稳频、性能稳定；性价比高。

应用环境应用领域：遥控开关、防盗报警、遥控门锁、遥控电动卷帘门窗、工业控制产品等。

备注外观颜色：白色；使用时接收频率、解码方式应与接收匹配。

产品介绍该遥控手柄性能优良，采用了数字编码调制技术，同时采用了进口晶振，具有抗干扰性强，性能稳定，高可靠性，无方向性，使用寿命长，电磁转换率高、发射功率大，频率稳定，性能优秀，采用了日本原状进口芯片，高稳定性，功耗低，采用了数字编码技术，编码可达6000多组，同类遥控器不会有任何干扰乱码现象，无线发射型号，遥控距离远，可穿墙，无方向性。

应用环境无线射频遥控器被广泛用于传输数据和信号控制，遥控车库，远距离遥控开关、警示灯控、电动门锁门锁，防盗报警、遥控门锁、遥控电动卷帘门窗、工业控制产品工业控制和无线安全报警行业等行业。

自选配件个人用户购买前必须了解遥控器和接收的配对原则（即：频率一致，地址码一致，振荡电阻匹配。

对于不是四个按键的遥控器还需要考虑数据位的对应）自己配对所需工具：烙铁、焊锡、合适的电阻（本产品不提供相关技术服务支持敬请谅解）备注采用2262 2264 2272 芯片设计的遥控产品种类繁多，功能强大，而且每个厂家的产品参数会有所不同，如果您想匹配遥控器，发射机和接收机配套使用必须满足以下三个条件：1，编码地址要一致，2262 2272芯片的第一脚到第8脚为地址码，每个引脚都可以选择悬空，接高电平，接低电平三个状态。

2，振荡电阻必须配套，在芯片的第15脚和16脚中间能找到。

mp620规格书摘要：一、MP620 规格书简介1.1 MP620 产品概述1.2 规格书的作用和目的二、MP620 技术参数2.1 处理器2.2 存储容量2.3 屏幕尺寸与分辨率2.4 摄像头参数2.5 网络连接2.6 电池容量与续航2.7 其他技术参数三、MP620 外观与结构设计3.1 尺寸与重量3.2 颜色与材质3.3 按键布局3.4 接口设计四、MP620 功能与应用4.1 操作系统与预装软件4.2 通话功能4.3 短信与彩信4.4 网络浏览与多媒体播放4.5 拍照与摄像4.6 数据传输与连接4.7 办公与学习应用4.8 其他功能五、MP620 性能与安全性5.1 性能表现5.2 用户体验5.3 安全性保障六、MP620 与其他竞品对比6.1 主要竞品概述6.2 规格参数对比6.3 性能与价格对比正文：【MP620 规格书简介】MP620 是一款集通话、短信、上网、多媒体娱乐等功能于一体的智能手机。

本文将详细介绍MP620 的规格书内容，包括技术参数、外观与结构设计、功能与应用、性能与安全性等方面的信息。

通过本文，您可以全面了解MP620 的各项性能指标，以便在购买和使用过程中做出明智的选择。

【MP620 技术参数】MP620 采用了高性能处理器，为用户提供了流畅的操作体验。

存储容量方面，MP620 提供了多种存储空间供用户选择，满足不同用户的需求。

屏幕方面，MP620 配置了一块较大尺寸的触控屏幕，分辨率高，显示效果出色。

摄像头方面，MP620 具备高像素的前后置摄像头，支持拍照与摄像功能。

网络连接方面，MP620 支持多种网络制式，满足国内外用户的需求。

电池方面，MP620 配备了高容量的电池，续航表现良好。

【MP620 外观与结构设计】MP620 采用了时尚的外观设计，颜色与材质搭配得当，手感舒适。

按键布局合理，易于操作。

接口设计方面，MP620 提供了丰富的接口，方便用户连接各种设备。

1/12L6204July 2003 s SUPPLY VOLTAGE UP TO 48V s R DS(ON) 1.2Ω L6204 (25°C)s CROSS CONDUCTION PROTECTION s THERMAL SHUTDOWN s 0.5A DC CURRENTs TTL/CMOS COMPATIBLE DRIVER s HIGH EFFICIENCY CHOPPINGsMULTIPOWER BCD TECHNOLOGYDESCRIPTIONThe L6204 is a dual full bridge driver for motor control applications realized in BCD technology which combines isolated DMOS power transistors with CMOS and Bipolar circuits on the same chip.By using mixed technology it has been possible to optimize the logic circuitry and the power stage to achieve the best possible performance.The logic inputs are TTL/CMOS compatible. Both channels are controlled by a separate Enable.Each bridge has a sense resistor to control the currenrt level.The L6204 is mounted in an 20-lead Powerdip and SO 24+2+2 packages and the four center pins are used to conduct heat to the PCB. At normal oper-ating temperatures no external heatsink is re-quired.Powerdip 16+2+2 SO 24+2+2ORDERING NUMBERS:L6204 L6204DDMOS DUAL FULL BRIDGE DRIVERBLOCK DIAGRAMSENSE 1GND SENSE 2THERMAL SHUT DOWNCHARGE PUMPIN4ENABLE 2IN3Vs2OUT 3OUT 4Vs1OUT 1OUT 2VBOOTIN1ENABLE 1IN2BOOTSTRAP OSCILLA TORMULTOPOWER BCD TECHNOLOGYL62042/12PIN CONNECTIONSPIN DESCRIPTION(*) For SO package the pins 4, 5, 10, 11, 18, 19, 24 and 25 are not connected.SO Pin (*)DIP Pin Symbols Functions11SENSE 1Sense resistor to provide the feedback for motor current control of the bridge A22IN1Digital input from the motor controller (bridge A)33ENABLE 1 A logic level low on this pin disable the bridge A 64OUT 1Output of one half bridge of the bridge A 75GND Common Power Ground 86GND Common Power Ground97OUT 3Ouput of one half bridge of the bridge B 128ENABLE 2 A logic level low on this pin disable the bridge B 139IN 3Digital input from the motor controller (bridge B)1410SENSE 2Sense resistor to provide the feedback for motor current control of the bridge B 1511BOOSTRAP OSC. VCP Oscillator output for the external charge pump1612IN 4Digital input from the motor controller (bridge B)1713OUT 4Output of one half bridge of the bridge B 2014V S2Supply voltage bridge B 2115GND Common Power Ground 2216GNDCommon Power Ground 2317V S1Supply Voltage bridge A2618OUT 2Output of one half bridge of the bridge A 2719IN 2Digital input from the motor controller (bridge A)2820VBOOTOvervoltage input for driving of the upper DMOS132456789201918171614151312DIP201011GND OUT3ENABLE2SENSE2IN3IN4VCPOUT4Vs2GND SENS1IN1ENABLE1OUT1GND GND Vs1OUT2IN2VBOOT SENSE1IN1ENABLE1N.C.N.C.GND OUT1GND OUT3VS2GND GND N.C.VS1N.C.OUT2IN2VBOOT 1324567892625242322202119271028N.C.N.C.SO24+2+2N.C.ENABLE2IN3IN4OUT4N.C.1112131816171514SENSE2VCPDIP16+2+2SO24+2+23/12L6204ABSOLUTE MAXIMUM RATINGSTHERMAL DATAELECTRICAL CHARACTERISTCSSymbol ParameterValue Unit V S Supply Voltage50V V IN , V ENInput or Enable Voltage Range -0.3 to +7V I o Pulsed Output Current 3A V SENSE Sensing Voltage -1 to 4V V BOOT Bootstrap Supply60V P totT otal power dissipation: (T pins = 80°C)(T amb = 70°C no copper area on PCB)(T amb = 70°C 8cm 2 copper area on PCB)51.232W W W T stg , T jStorage and Junction Temperature-40 to 150°CSymbol ParameterSO DIP Unit R th j-pins Thermal Resistance Junction-pins Max 1614°C/W R th j-ambThermal Resistance Junction-ambientMax7365°C/WSymbol ParameterTest ConditionMin. Typ.Max.Unit V S Supply Voltage 1248V I S T otal Quiescent Current EN1=EN2=H; IN1=IN2=IN3=IN4=L EN1 = EN2 = L1010mA mA f C Commutation Frequency 20KHz T J Thermal Shutdown 150°C T d Dead Time Protection 500ns TRANSISTORSI DSS Leakage Current OFF 1mA R DS On Resistance ON1.2ΩLOGIC LEVELSV INL , V ENL Input Low Voltage -0.30.8V V INH , V ENH Input High Voltage 27V I INL , I ENL Input Low Current IN1 = IN2 = IN3 = IN4 = EN1 = EN2 = L-10µA I INH , I ENHInput High CurrentIN1 = IN2 = IN3 = IN4 = EN1 = EN2 = H50µAL62044/12APPLICATION DIAGRAMCIRCUIT DESCRIPTIONL6204 is a dual full bridge IC designed to drive DC motors, stepper motors and other inductive loads. Each bridge has 4 power DMOS transistor with R DSon = 1.2Ω and the relative protection and control circuitry.(see fig. 3)The 4 half bridges can be controlled independently by means of the 4 inputs IN!, IN2, IN3, IN4 and 2 en-able inputs ENABLE1 and ENABLE2.External connections are provided so that sensing resistors can be added for constant current chopper applications.LOGIC DRIVE (*)L = Low H = High X = Don’t care (*) True table for the two full bridgesINPUTSOUTPUT MOSFETSEN1=EN2=HIN1IN2IN3IN4LL Sink 1, Sink 2L H Sink 1, Source 2H L Source 1, Sink 2HH Source 1, Source 2EN1=EN2=LXXAll transistor turned OFFSTEPPER MOTORABVs2OUT3OUT4OUT2OUT1Vs1D1C1VBOOTIN1ENABLE1IN2CHARGE PUMPTHERMAL SHUT DOWNBOOTSTRAP OSCILLATORC2D2SENSE1SENSE1RS1GNDSENSE2SENSE2RS2VsIN4ENABLE 2IN3L6204CROSS CONDUCTIONAlthough the device guarantees the absence of cross-conduction, the presence of the intrinsic diodes in the POWER DMOS structure causes the generation of current spikes on the sensing terminals.This is due to charge-discharge phenomena in the capacitors C1 & C2 associated with the drain source junctions (fig. 1). When the output switches from high to low, a current spike is generated associated with the capacitor C1. On the low-to-high transition a spike of the same polarity is generated by C2, preceded by a spike of the opposite polarity due to the charging of the input capacity of the lower POWER DMOS transistor (see fig. 2).Figure 1. Intrinsic Structures in the POWER MOS TransistorsFigure 2. Current Typical Spikes on the Sensing Pin5/12L62046/12TRANSISTOR OPERATION ON STATEWhen one of the POWER DMOS transistors is ON it can be considered as a resistor R DS(ON) = 1.2Ω at a junction temperature of 25°C.In this condition the dissipated power is given by :P ON = R DS(ON) · I DS 2The low R DS(ON) of the Multipower-BCD process can provide high currents with low power dissipation.OFF STATEWhen one of the POWER DMOS transistor is OFF the VDS voltage is equal to the supply voltage and only the leakage current IDSS flows. The power dissipation during this period is given by :P OFF = V S · I DSS TRANSITIONSLike all MOS power transistors the DMOS POWER transistors have as intrinsic diode between their source and drain that can operate as a fast freewheeling diode in switched mode applications.During recirculation with the ENABLE input high, the voltage drop across the transistor is RDS(ON) . ID and when the voltage reaches the diode voltage it is clamped to its characteristic.When the ENABLE input is low, the POWER MOS is OFF and the diode carries all of the recirculation current. The power dissipated in the transitional times in the cycle depends upon the voltage and current waveforms in the application.P trans = I DS (t) × V DS (t)BOOTSTRAP CAPACITORSTo ensure the correct driving of high side drivers a voltage higher than V S is supplied on pin 20 (V boot ).This bootstrap voltage is not needed for the lower power DMOS transistor because their sources are grounded. To produce this voltage a charge pump method is used and mAde by two external capacitors and two diodes. It can supply the 4 driving blocks of the high side drivers. Using an external capacitor the turn-on speed of the high side driver is very high; furthermore with different capacitance values it is pos-sible to adapt the device to different switching frequencies. It is also possible to operate two or more L6204s using only 2 diodes and 2 capacitance for all the ICs; all the Vboot pins are connected to the Cs-tore capacitance while the pin 11 (VCP) of just one L6204 is connect to C pump , obviously all the L6204 ICs have to be connected to the same V S . (see fig. 6)Figure 3. Two Phase ChoppingIN1 = H IN2 = L EN1 = HIN1 = L IN2 = H EN1 = H7/12L6204Figure 4. One Phase ChoppingFigure 5. Enable ChoppingFigure 6.DEAD TIMETo protect the device against simultaneous conduction in both arms of the bridge and the resulting rail-to-rail short, the logic circuits provide a dead time.THERMAL PROTECTIONA thermal protection circuit has been included that will disable the device if the junction temperature reach-es 150 °C. When the temperature has fallen to a safe level the device restarts under the control of the input and enable signals.IN1 = H IN2 = L EN1 = HIN1 = H IN2 = H EN1 = HIN1 = H IN2 = L EN1 = HIN1 = X IN2 = XEN1 = LL62048/12APPLICATION INFORMATION RECIRCULATIONDuring recirculation with the ENABLE input high, the voltage drop across the transistor is R DS(ON). I L for voltages less than 0.7 V and is clamped at a voltage depending on the characteristics of the source-drain diode for greater voltages. Although the device is protected against cross conduction, current spikes can appear on the current sense pin due to charge/discharge phenomena in the intrinsic source drain capac-itances. In the application this does not cause any problems because the voltage created across the sense resistor is usually much less than the peak value, although a small RC filter can be added if necessary.POWER DISSIPATION (each bridge)In order to achieve the high performance provided by the L6204 some attention must be paid to ensure that it has an adequate PCB area to dissipate the heat. The first stage of any thermal design is to calculate the dissipated power in the appl ication, for this example the half step operation shown in figure 7 is con-sidered.RISE TIME T rWhen an arm of the half bridge is turned on current begins to flow in the inductive load until the maximum current I L is reached after a time T r .The dissipated energy E OFF/ON is in this case :E OFF/ON = [R DS(ON) · I L 2 · T r ] · 2/3Figure 7.ON TIME T ONDuring this time the energy dissipated is due to the ON resistance of the transistors E ON and the commu-tation E COM . As two of the POWER DMOS transistors are ON E ON is given by :E ON = I L 2 · R DS(ON) · 2 · T ONIn the commutation the energy dissipated is :E COM = V S · I L · T COM · f SWITCH · T ONWhere :T COM = Commutation Time and it is assumed that ;T COM = T TURN-ON = T TURN-OFF = 100 ns f SWITCH= Chopper frequencyL6204FALL TIME T fFor this example it is assumed that the energy dissipated in this part of the cycle takes the same form as that shown for the rise time :E ON/OFF = [R DS(ON) · I L · T f] · 2/3QUIESCENT ENERGYThe last contribution to the energy dissipation is due to the quiescent supply current and is given by :E QUIESCENT = I QUIESCENT · V S · TTOTAL ENERGY PER CYCLEE TOT = (E OFF/ON + E ON + E COM + E ON/OFF) bridge 1 + (E OFF/ON + E ON + E COM + E ON/OFF)bridge 2 ++ E QUIESCENTThe Total Power Dissipation PDIS is simply :P DIS = E TOT/TT r = Rise timeT ON = ON timeT f = Fall TimeT d = Dead timeT = PeriodT = T r + T ON + T f + T d9/12L620410/12DIM.mm inch MIN.TYP.MAX.MIN.TYP.MAX.a10.510.020B 0.851.400.0330.055b 0.500.020b10.380.500.0150.020D 24.800.976E 8.800.346e 2.540.100e322.860.900F 7.100.280I 5.100.201L 3.300.130Z1.270.050Powerdip 20OUTLINE AND MECHANICAL DATA11/12L6204SO28DIM.mm inch MIN.TYP.MAX.MIN.TYP.MAX.A2.650.104a10.10.30.0040.012b0.350.490.0140.019b10.230.320.0090.013C0.50.020c145° (typ.)D17.718.10.6970.713E1010.650.3940.419e1.270.050e316.510.65F7.47.60.2910.299L0.4 1.270.0160.050S 8° (max.)OUTLINE AND MECHANICAL DATAL6204Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.STMicroelectronics acknowledges the trademarks of all companies referred to in this document.The ST logo is a registered trademark of STMicroelectronics©2003 STMicroelectronics - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.12/12。

精浦钢丝绳传感器规格参数表
晋精浦钢丝绳传感器是一种常用的压力传感器，具有精度高、响应速度快等优点，广泛应用于液压设备，可长期稳定和可靠地检测、控制、调节多种液压系统参数。

晋精浦钢丝绳传感器规格参数表如下：
主要技术参数：
1.工作电压：DC3V-24V；
2.输出信号：4-20mA或0-5V；
3.精度：≤1.0%FS；
4.响应时间：≤1ms；
5.最大额定负载电流：≤150mA；
6.环境温度范围：-20℃~+85℃；
7.工作温度范围：-20℃~+85℃；
8.工作湿度范围：0-95%RH；
9.绝缘阻抗：≥100MΩ。

晋精浦钢丝绳传感器的工作原理是检测拉力变化，首先将安装在钢丝绳上的传感器内部电路板固定紧固，拉力值变化引起传感器内部电路板的电压变化，从而改变输出信号。

该传感器具有体积小、重量轻、低功耗、精度高、响应速度快等优点，适用于高精度的测量应用。

晋精浦钢丝绳传感器可用于液压控制及检测中的各种液压系统参数，如压力、负荷、拉力等，可长期稳定、可靠地检测、控制、调节多种液压系统参数，有效提高工作效率，提高液压设备的安全性和可靠性。

总之，晋精浦钢丝绳传感器规格参数较为完善，质量优良，是目前压力测量及液压系统控制应用的最佳选择。

XC6204产品介绍XC6204概述：XC6204系列是高精度,低噪音,采用CMOS工艺的正电压LDO调整器芯片。

此系列调整器具有高纹波抑制和低输入输出压差的特性。

XC6204系列芯片内部包括一个参考电压源, 一个误差运算放大器,一个电流限制器,一个相位补偿电路和一个驱动三极管。

XC6204系列使用低ESR的陶瓷电容作负载电容,便可使输出稳定,并且具有良好的瞬态响应,即使负载变化也能保证电路稳定的工作。

电流限制器的foldback电路为输出电流限制器和输出引脚提供短路保护。

XC6204系列具有的CE功能,可以关闭芯片的输出,因而极大地降低功耗。

输出电压范围是1.8V至6.0V,间隔为0.05V。

XC6204参数特点：最大输出电流 150mA(E~H系列300mA)输入输出电压差 IOUT=100mA时,200mV最高工作电压 2~10V输出电压设定范围 (XC6204) 1.8～6.0V(0.05V间隔)高精度设定电压精度±2%低消耗电流 70μA(TYP.)待机电流 0.1μA以下(TYP.)高纹波抑制 70dB(10kHz时)低输出噪声 30μVrms工作环境温度 -40℃～85℃可使用低ESR电容器陶瓷电容器封装 SOT-25, SOT-89-5, USP-6BXC6204电路图：XC6204引脚配置：XC6204常用型号：XC6204B282MR XC6204B091MR XC6204B092MR XC6204B09AMR XC6204B09BMRXC6204A101MR XC6204A102MR XC6204A10AMRXC6204A10BMRXC6204A111MRXC6204A112MRXC6204A11AMRXC6204A11BMRXC6204A121MR XC6204A122MRXC6204A12AMR XC6204A172MRXC6204A12BMRXC6204A131MR XC6204A132MRXC6204A13AMRXC6204A13BMR XC6204A141MRXC6204A142MRXC6204A14AMRXC6204A14BMR XC6204A151MRXC6204A152MR XC6204A15AMR XC6204A15BMRXC6204A161MR XC6204A162MRXC6204A16AMRXC6204A16BMRXC6204A171MRXC6204A17AMRXC6204A17BMR XC6204A181MR XC6204A182DRXC6204A182MRXC6204A18AMR XC6204A18BMRXC6204A191MR XC6204A192MR XC6204A19AMRXC6204A19BMR XC6204A201MRXC6204可替代产品：XC6204可替代Fairchild Semiconductor的FAN2508S XC6204可替代Fairchild Semiconductor的ILC7080AIM5 XC6204可替代Linear Technology的LT1761ES5XC6204可替代Linear Technology的LT1964ES5XC6204可替代Linear Technology的LTC1844ES5XC6204可替代Maxim Semiconductor的MAX8877EUKXC6204可替代Micrel Semiconductor的MIC5203XC6204可替代Micrel Semiconductor的MIC5207XC6204可替代Micrel Semiconductor的MIC5219XC6204可替代Micrel Semiconductor的MIC5245XC6204可替代National Semiconductor的LP2982IM5XC6204可替代National Semiconductor的LP2985AIM5 XC6204可替代Fairchild Semiconductor的FAN2504S25 XC6204可替代Fairchild Semiconductor的FAN2508SXC6204可替代Fairchild Semiconductor的ILC7080AIM5 XC6204可替代Fairchild Semiconductor的ILC7081AIM5 XC6204可替代Fairchild Semiconductor的ILC7082AIM5 XC6204可替代Fairchild Semiconductor的LP2980IM5X XC6204可替代Seiko Instruments的S-817B18AMC-CWH-T2 XC6204可替代Micrel Semiconductor的MIC5305XC6204可替代National Semiconductor的LP3985IBLXC6204可替代Fairchild Semiconductor的FAN2502SXC6204可替代National Semiconductor的LP2985IM5XC6204可替代National Semiconductor的LP3984IBPXC6204可替代National Semiconductor的LP3985IM5XC6204可替代On Semiconductors的MC33761XC6204可替代On Semiconductors的MC78PCXC6204可替代Ricoh ElectronicR1110NXC6204可替代Ricoh ElectronicR1111NXC6204可替代Ricoh ElectronicR1112NXC6204可替代ST Microelectronics的LD2979M XC6204可替代ST Microelectronics的LD2980ABM XC6204可替代ST Microelectronics的LD2981ABM XC6204可替代Seiko Instruments的S-L2980A（注：可编辑下载，若有不当之处，请指正，谢谢!）。

Eaton MPN6204XEAXX2SEaton Magnum low voltage power circuit breaker, Magnum PXR,Narrow frame, 2000 A, 65 kA, Four-pole, Drawout horizontal(without clusters) mounting, PXR25 LSIGAM trip unitGeneral specificationsEaton Magnum low voltage power circuitbreakerMPN6204XEAXX2S78668960161414.6 in16.8 in16.3 in120 lbCE Marked CCC Marked NEMA Compliant SABA Listed Lloyd's Register Certified CSA CertifiedANSIUL ListedKEMA CertifiedDNV GL CertifiedABS CertifiedProduct Name Catalog NumberUPCProduct Length/Depth Product Height Product Width Product Weight Compliances CertificationsNarrow Four-pole Magnum PXRNarrow Magnum PXR25 LSIG ARMSFour-pole2000 A65 kAIC65 kAIC2000 AZone selective interlocking application paper Magnum circuit breakers with Power Xpert Release trip units product aid Selevctive coordination application paper - IA0120000E3Magnum PXR and PD-SB standard and narrow frame UL Certificate of ComplianceMagnum PXR and PD-SB double and double narrow frame UL Certificate of ComplianceMicrosoft Word - Power Xpert Protection Manager Quick Start Guide.docxMagnum PXR low voltage power circuit breakers user manual Power Xpert Release trip unit for Magnum PXR circuit breakers PXRFrame Number of poles TypeFrame Series Trip TypeNumber of poles Rated uninterrupted current (Iu)Interrupt rating Interrupt rating Rated uninterrupted current (Iu)Application notesBrochuresCatalogsCertification reportsManuals and user guidesEaton Corporation plc Eaton House30 Pembroke Road Dublin 4, Ireland © 2023 Eaton. All Rights Reserved. Eaton is a registered trademark.All other trademarks areproperty of their respectiveowners./socialmedia20/25 user manualPower Xpert Protection Manager x64 22.6 1 Power Xpert Protection Manager x32 22.06 1 Eaton Specification Sheet - MPN6204XEAXX2S Low voltage circuit breakers guide spec Magnum PXR 20/25 electronic trip units time current curves Safer by design: arc energy reduction techniques Molded case and low-voltage power circuit breaker health Cyber security white paperSoftware, firmware, and applications Specifications and datasheetsTime/current curvesWhite papers。