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ISOTOPandTURBOSWITCHaretrademarksofSTMicroelectronics.November1999-Ed:4BULTRA-FAST,SOFTRECOVERY.VERYLOWOVERALLPOWERLOSSESINBOTHTHEDIODEANDTHECOMPANIONTRANSISTOR.HIGHFREQUENCYAND/ORHIGHPULSEDCURRENTOPERATION.HIGHREVERSEVOLTAGECAPABILITY.LOWINDUCTANCEPACKAGE<5nH.INSULATEDPACKAGE:ISOTOPTMElectricalinsulation:2500VRMSCapacitance:<45pF.FEATURESANDBENEFITS

TURBOSWITCH1200Vdrasticallycutslossesinallhighvoltageoperationswhichrequireextremelyfast,softandnoise-freepowerdiodes.DuetotheiroptimizedswitchingperformancestheyalsohighlydecreasepowerlossesinanyassociatedswitchingIGBTorMOSFETinallfreewheelmodeoperations.TheyareparticularlysuitableinMotorControlcircuitries,orintheprimaryofSMPSassnubber,clampingordemagnetizingdiodes.TheyarealsosuitableforsecondaryofSMPSashighvoltagerectifierdiodes.DESCRIPTIONIF(AV)25AVRRM1200Vtrr(typ)60nsVF(max)1.9VMAINPRODUCTCHARACTERISTICS

SymbolParameterValueUnitVRRMRepetitivepeakreversevoltage1200VIF(RMS)RMSforwardcurrent50AIFRMRepetitivepeakforwardcurrenttp=5µsF=5kHzsquare300AIFSMSurgenonrepetitiveforwardcurrenttp=10mssinusoidal210ATstgStoragetemperaturerange-65to+150°CTjMaximumoperatingjunctiontemperature150°CABSOLUTERATINGS(limitingvalues,perdiode)STTA2512PSTTA5012TV1/2®TURBOSWITCH™ULTRA-FASTHIGHVOLTAGEDIODE

ISOTOPTMK2A2K1A1STTA5012TV1K2K1A1A2

STTA5012TV2

KK

ASOD93STTA2512P

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SymbolParameterTestconditionsMinTypMaxUnittrrReverserecoverytimeTj=25°CIF=0.5AIR=1AIrr=0.25AIF=1AdIF/dt=-50A/µsVR=30V60110nsIRMMaximumreverserecoverycurrentTj=125°CVR=600VIF=25AdIF/dt=-200A/µsdIF/dt=-500A/µs4535ASfactorSoftnessfactorTj=125°CVR=600VIF=25AdIF/dt=-500A/µs1.2/DYNAMICELECTRICALCHARACTERISTICS(perdiode)TURN-OFFSWITCHING

SymbolParameterTestconditionsMinTypMaxUnittfrForwardrecoverytimeTj=25°CIF=25A,dIF/dt=200A/µsmeasuredat1.1×VFmax900nsVFpPeakforwardvoltageTj=25°CIF=25A,dIF/dt=200A/µsIF=40A,dIF/dt=500A/µs3530VTURN-ONSWITCHINGSymbolParameterTestconditionsMinTypMaxUnitVF*ForwardvoltagedropIF=25ATj=25°CTj=125°C1.32.11.9VVIR**ReverseleakagecurrentVR=0.8xVRRMTj=25°CTj=125°C2.01508µAmAVtoThresholdvoltageIp<3.IF(AV)Tj=125°C1.52VRdDynamicresistance15mΩTestpulses:*tp=380µs, δ<2%**tp=5ms,δ <2%STATICELECTRICALCHARACTERISTICS(perdiode)

Toevaluatethemaximumconductionlossesusethefollowingequation:P=VtoxIF(AV)+RdxIF2(RMS)SymbolParameterConditionsValueUnitRth(j-c)JunctiontocasethermalresistanceISOTOPPerdiode1.4°C/WISOTOPTotal0.75SOD931.2Rth(c)CouplingthermalresistanceISOTOPCoupling0.1°C/WP1ConductionpowerdissipationIF(AV)=25Aδ=0.5ISOTOPTc=70°C57WSOD93Tc=82°CPmaxTotalpowerdissipationPmax=P1+P3(P3=10%P1)ISOTOPTc=62°C62.5WSOD93Tc=75°CTHERMALANDPOWERDATA(perdiode)STTA2512P/STTA5012TV1/2

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0510152025300102030405060

IF(av)(A)P1(W)

δ=1δ=0.5δ=0.2δ=0.1

Tδ=tp/TtpFig.1:Conductionlossesversusaveragecurrent(perdiode).

0.00.51.01.52.02.53.03.54.0110100300

VFM(V)IFM(A)Tj=125°CFig.2:Forwardvoltagedropversusforwardcurrent(maximumvalues,perdiode).

1E-31E-21E-11E+05E+00.00.20.40.60.81.0

tp(s)Zth(j-c)/Rth(j-c)

δ=0.2δ=0.5

Singlepulseδ=0.1Fig.3-1:Relativevariationofthermalimpedancejunctiontocaseversuspulseduration(perdiode)(ISOTOP).

1E-41E-31E-21E-11E+00.00.20.40.60.81.0

tp(s)Zth(j-c)/Rth(j-c)

δ=0.1δ=0.2δ=0.5

SinglepulseFig.3-2:Relativevariationofthermalimpedancejunctiontocaseversuspulseduration(SOD93).

0100200300400500050100150200250300350400450500trr(ns)VR=600VTj=125°CIF=2*IF(av)IF=IF(av)

IF=0.5*IF(av)dIF/dt(A/µs)Fig.5:ReverserecoverytimeversusdIF/dt(90%confidence,perdiode).

01002003004005000510152025303540455055IRM(A)VR=600VTj=125°CIF=2*IF(av)IF=0.5*IF(av)IF=IF(av)

dIF/dt(A/µs)Fig.4:PeakreverserecoverycurrentversusdIF/dt(90%confidence,perdiode).STTA2512P/STTA5012TV1/2

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01002003004005000.801.001.201.401.60SfactorIF<2*IF(av)VR=600VTj=125°C

dIF/dt(A/µs)Fig.6:Softnessfactor(tb/ta)versusdIF/dt(typicalvalues,perdiode).

2550751001250.70.80.91.01.1

Tj(°C)IRMSfactorFig.7:Relativevariationofdynamicparametersversusjunctiontemperature(referenceTj=125°C).

01002003004005000102030405060VFP(V)Tj=125°CIF=IF(av)

dIF/dt(A/µs)Fig.8:TransientpeakforwardvoltageversusdIF/dt(90%confidence,perdiode).

0100200300400500200400600800100012001400tfr(ns)Tj=125°CVFR=1.1*VFmax.IF=IF(av)

dIF/dt(A/µs)Fig.9:ForwardrecoverytimeversusdIF/dt(90%confidence,perdiode).STTA2512P/STTA5012TV1/2

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Fig.A:”FREEWHEEL”MODE.TOTALLOSSESduetothediodeP=P1+P2+P3+P4+P5Watts

SWITCHINGLOSSESinthediodeSWITCHINGLOSSESinthetansistorduetothediodeCONDUCTIONLOSSESinthediodeREVERSELOSSESinthediodeThe1200VTURBOSWITCHserieshasbeendesignedtoprovidethelowestoverallpowerlossesinallhighfrequencyorhighpulsedcurrentoperations.Insuchapplications(FigAtoD),thewayofcalculatingthepowerlossesisgivenbelow:APPLICATIONDATA

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STTH1212D资料

STTH1212D资料

March 2006 Rev 11/99STTH1212Ultrafast recovery - 1200 V diodeMain product characteristics

Features and benefits■Ultrafast, soft recovery■Very low conduction and switching losses■High frequency and/or high pulsed current operation■High reverse voltage capability■High junction temperatureDescriptionThe high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.Order codesIF(AV)12 AVRRM1200 VTj175° CVF (typ)1.25 Vtrr (typ)50 ns

GST25中文资料

GST25中文资料

High Value Resistors radial leaded

Type: GST

Size: 1210, 25, 2512, 4020

Features:

• High Value Resistors in Thickfilm

• Variable lead spacing

• Resistance values up to 1 Teraohm

• Excellent values of tolerance, TCR and VCR

• Untrimmed for higher Working Voltage

Dimensions:

L = Length, B = Width, D = Thickness, d = Wire diameter (in mm),

R = Standard lead spacing (other spacing possible by bending)

Tolerance of dimensions: ±0.2 mm

Packaging:

Bulk in plastic bags or cardboard-boxes

Minimum quantity: 100 pieces per value

Ordering Data:

Type – value – tolerance – TCR – measuring voltage

Example: GST 4020 10G ±10% TCR 100 20V

If no data for TCR and measuring voltage are supplied, the standard value

(highest value in the table on next page) and measuring voltage of 10V is used. Size L B D R d

1210 3.2 2.5 0.9 2.0 0.40 ±0.05

CDHV2512BC2005F2500HS2中文资料

CDHV2512BC2005F2500HS2中文资料

CDHV 2512

Vishay Techno

Document Number:

Revision: 18-Nov-05

1High Voltage Chip Divider

FEATURES

•High voltage up to 3000 volts

•Outstanding Stability

•Typical resistance ratios of 250:1, 500:1, etc

•Flow solderable

•Tape & Reel packaging available

•Top and Wraparound termination

•

Nickel Barrier available

ELECTRICAL SPECIFICATIONS

Resistance range: 1 MΩ to 20 GΩ

Resistance tolerance: ± 1 % to ± 20 %

Power rating: See table

Voltage coefficient: See table

Temperature coefficient: See table

Ratio tracking: See tableMECHANICAL SPECIFICATIONS

Construction: 96 % alumina substrate with proprietary

cermet resistance element and specified termination

material.

ENVIRONMENTAL SPECIFICATIONS

Operating temperature: - 55 °C to + 150 °C

Life: Less than 0.5 % change when tested at full rated power

(Reference only: Not for all values specified. Consult factory for

ST2052BD中文资料

ST2052BD中文资料

1/9July 2005I80mΩ HIGH-SIDE MOSFET SWITCH

I500mA CONTINUOUS CURRENT PER CHANNEL

IINDEPENDENT THERMAL AND SHORT-CIRCUIT PROTECTION WITH OVERCURRENT LOGIC OUTPUT

IOPERATING RANGE FROM 2.7V TO 5.5V

ICMOS- AND TTL-COMPATIBLE ENABLE INPUTS

I10 ms OC_N FAULT BLANKING

I2.5ms TYPICAL RISE TIME

IUNDERVOLTAGE LOCKOUT

I10µA MAXIMUM STANDBY SUPPLY CURRENT

I AMBIENT TEMPERATURE RANGE, 0°C TO 85°C

IESD PROTECTION

DESCRIPTIONThe ST2052 power distribution switches isintended for application where heavy capacitiveloads and short circuits are likely to beencountered. These devices incorporate 80mΩN-channel MOSFET high-side power switches forpower-distribution systems that require multiplepowers switches in a single package. Each switchis controlled by an independent logic enable input.Gate drive is provided by an internal charge pumpdesigned to control the power-switch rise timesand fall times to minimize current surges duringswitching. The charge pump requires no externalcomponents and allows operation from suppliesas low as 2.7 V.When the output load exceeds the current-limitthreshold or a short is present, these devices limitthe output current to a safe level by switching intoa constant-current mode, pulling the overcurrent(OCx) logic output low. A 10ms deglitching circuitprovides fault-blanking feature, preventing theOC_N pin to be asserted during hot-insertion orshort spikes of overcurrent conditions.When continuous heavy overloads and shortcircuits increase the power dissipation in theswitch, causing the junction temperature to rise, athermal protection circuit shuts off the switch toprevent damage. Recovery from a thermalshutdown is automatic once the device has cooledsufficiently. Internal circuitry ensures the switchremains off until valid input voltage is present.These power-distribution switches are designed tocurrent limit at 0.9 A