TSMS3700中文资料
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94 8553
Applications
Infrared source in tactile keyboards IR diode in low space applications Matching with phototransistor TEMT3700 in reflective sensors PCB mounted infrared sensors Infrared emitter for miniature light barriers
250 PV – Power Dissipation ( mW ) IF – Forward Current ( mA ) 100 200 104 103 102 101 100 10–1 0
94 7996 e
150 RthJA 100
50 0 0 20 40 60 80
1
2
3
4
94 8029 e
Tamb – Ambient Temperature ( °C )
Figure 6. Radiant Intensity vs. Forward Current
Document Number 81037 Rev. 3, 01-Aug-00
3 (6)
元器件交易网
TSMS3700
Vishay Telefunken
Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature
Figure 10. Relative Radiant Intensity vs. Angular Displacement
4 (6)
Document Number 81037 Rev. 3, 01-Aug-00
I e rel – Relative Radiant Intensity
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80°
0.4
0 –10 0 10
94 7993 e
50
100
140
94 8013 e
0.6
0.4
0.2
0
0.2
0.4
0.6
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Forward Voltage vs. Ambient Temperature
100 I e – Radiant Intensity ( mW/sr )
10000 Tamb IF – Forward Current ( mA ) tp/T=0.005 1000 0.01 0.02
Document Number 81037 Rev. 3, 01-Aug-00
1 (6)
元器件交易网
TSMS3700
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions tp/T = 0.5, tp = 100 ms tp = 100 ms Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1.5 170 100 –55...+100 –55...+100 260 450 Unit V mA mA A mW °C °C °C °C K/W
VF – Forward Voltage ( V )
Figure 1. Power Dissipation vs. Ambient Temperature
125 100 V Frel – Relative Forward Voltage IF – Forward Current ( mA )
Figure 4. Forward Current vs. Forward Voltage
v60°C
0.05
10
100
0.2 0.5 DC
1
10
0.1
1 0.01
95 9985
0.1 0.1 1 10 100
94 7956 e
100
tp – Pulse Length ( ms )
101 102 103 IF – Forward Current ( mA )
104
Figure 3. Pulse Forward Current vs. Pulse Duration
104
94 7994 e
l – Wavelength ( nm )
0° 10 ° 20 °
950
1000
Figure 7. Radiant Power vs. Forward Current
1.6
Figure 9. Relative Radiant Power vs. Wavelength
30°
1.2 I e rel ; Fe rel IF = 20 mA 0.8
100 1.6
fe
TKlp tr tr tf tf
lp Dl
2 (6)
Document Number 81037 Rev. 3, 01-Aug-00
元器件交易网
TSMS3700
Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specifiedishay Telefunken
GaAs Infrared Emitting Diode in SMT Package
Description
TSMS3700 is a standard GaAs infrared emitting diode in a miniature PL–CC–2 package. Its flat window provides a wide aperture, making it ideal for use with external optics. The diode is case compatible to the TEMT3700 phototransistor, allowing the user to assemble his own optical interrupters.
元器件交易网
TSMS3700
Vishay Telefunken Dimensions in mm
95 11314
Document Number 81037 Rev. 3, 01-Aug-00
5 (6)
元器件交易网
TSMS3700
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
Applications
Infrared source in tactile keyboards IR diode in low space applications Matching with phototransistor TEMT3700 in reflective sensors PCB mounted infrared sensors Infrared emitter for miniature light barriers
250 PV – Power Dissipation ( mW ) IF – Forward Current ( mA ) 100 200 104 103 102 101 100 10–1 0
94 7996 e
150 RthJA 100
50 0 0 20 40 60 80
1
2
3
4
94 8029 e
Tamb – Ambient Temperature ( °C )
Figure 6. Radiant Intensity vs. Forward Current
Document Number 81037 Rev. 3, 01-Aug-00
3 (6)
元器件交易网
TSMS3700
Vishay Telefunken
Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature
Figure 10. Relative Radiant Intensity vs. Angular Displacement
4 (6)
Document Number 81037 Rev. 3, 01-Aug-00
I e rel – Relative Radiant Intensity
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80°
0.4
0 –10 0 10
94 7993 e
50
100
140
94 8013 e
0.6
0.4
0.2
0
0.2
0.4
0.6
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Forward Voltage vs. Ambient Temperature
100 I e – Radiant Intensity ( mW/sr )
10000 Tamb IF – Forward Current ( mA ) tp/T=0.005 1000 0.01 0.02
Document Number 81037 Rev. 3, 01-Aug-00
1 (6)
元器件交易网
TSMS3700
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions tp/T = 0.5, tp = 100 ms tp = 100 ms Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1.5 170 100 –55...+100 –55...+100 260 450 Unit V mA mA A mW °C °C °C °C K/W
VF – Forward Voltage ( V )
Figure 1. Power Dissipation vs. Ambient Temperature
125 100 V Frel – Relative Forward Voltage IF – Forward Current ( mA )
Figure 4. Forward Current vs. Forward Voltage
v60°C
0.05
10
100
0.2 0.5 DC
1
10
0.1
1 0.01
95 9985
0.1 0.1 1 10 100
94 7956 e
100
tp – Pulse Length ( ms )
101 102 103 IF – Forward Current ( mA )
104
Figure 3. Pulse Forward Current vs. Pulse Duration
104
94 7994 e
l – Wavelength ( nm )
0° 10 ° 20 °
950
1000
Figure 7. Radiant Power vs. Forward Current
1.6
Figure 9. Relative Radiant Power vs. Wavelength
30°
1.2 I e rel ; Fe rel IF = 20 mA 0.8
100 1.6
fe
TKlp tr tr tf tf
lp Dl
2 (6)
Document Number 81037 Rev. 3, 01-Aug-00
元器件交易网
TSMS3700
Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specifiedishay Telefunken
GaAs Infrared Emitting Diode in SMT Package
Description
TSMS3700 is a standard GaAs infrared emitting diode in a miniature PL–CC–2 package. Its flat window provides a wide aperture, making it ideal for use with external optics. The diode is case compatible to the TEMT3700 phototransistor, allowing the user to assemble his own optical interrupters.
元器件交易网
TSMS3700
Vishay Telefunken Dimensions in mm
95 11314
Document Number 81037 Rev. 3, 01-Aug-00
5 (6)
元器件交易网
TSMS3700
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
