NDK晶振NH37M28LN高精度晶体振荡器规格书

NTH / NCH SeriesSaRonixCrystal Clock OscillatorTechnical Data3.3V, LVCMOS / HCMOS, Tri-State/saronixDS-159 REV DSymmetry:Rise and Fall Times:Logic 0:Logic 1:Load:Period Jitter RMS:0.5 MHz to 106.25 MHzFrequency Stability:Frequency Range:±20, ±25, ±50 or ±100 ppm over all conditions: calibrationtolerance, operating temperature, input voltage change,load change, 30 day aging, shock and vibration.Temperature Range:Operating:Storage:0 to +70°C or -40 to +85°C, See Part Numbering Guide-55 to +125°CSupply Voltage:Recommended Operating: 3.3V ±10%Supply Current:20mA max, 0.5 to 30 MHz25mA max, 30+ to 50 MHz30mA max, 50+ to 80 MHz35mA max, 80+ to 106.25 MHzACTUAL SIZEDescriptionA crystal controlled, low current, lowjitter and high frequency oscillator withprecise rise and fall times demanded innetworking applications. The tri-statefunction on the NTH enables the outputto go high impedance. Device is pack-aged in a 14 or an 8-pin DIP compatibleresistance welded, all metal groundedcase to reduce EMI. True SMD DIL14versions for IR reflow are available, se-lect option "S" in part number builder.See separate data sheet for SMD packagedimensions.Output Drive:45/55% max 0.5 to 70 MHz max40/60% max @ 50% V DD4ns max 0.5 to 50 MHz, 20% to 80% V DD3ns max 50+ to 80 MHz1.5ns max 80+ to 106.25 MHz10% V DD max90% V DD min50 pF, 0.5 to 50 MHz30pF, 50+ to 70 MHz15pF, 70+ to 106.25 MHz8ps maxHCMOSMechanical:Shock:Solderability:Terminal Strength:Vibration:Solvent Resistance:Resistance to Soldering Heat:MIL-STD-883, Method 2002, Condition BMIL-STD-883, Method 2003MIL-STD-883, Method 2004, Conditions A & CMIL-STD-883, Method 2007, Condition AMIL-STD-202, Method 215MIL-STD-202, Method 210, Condition A, B or CEnvironmental:Gross Leak Test:Fine Leak Test:Thermal Shock:Moisture Resistance:MIL-STD-883, Method 1014, Condition CMIL-STD-883, Method 1014, Condition A2MIL-STD-883, Method 1011, Condition AMIL-STD-883, Method 1004Applications & FeaturesADSL, DSLDS3, ES3, E1, STS-1, T1Ethernet Switch, Gigabit EthernetFibre Channel ControllerMPEGNetwork ProcessorsVoice Over Packet32 Bit MicroprocessorsTri-State output on NTHLVCMOS / HCMOS compatibleAvailable up to 106.25 MHz•••••••••••Output WaveformT r T fCMOSLogic 180% V DD50% V DD20% V DDLogic 0SYMMETRYSaRonixSaRonixSaRonixCrystal Clock Oscillator3.3V, LVCMOS / HCMOS,/saronixSaRonixTrue SMD Adaptor - 7.57mm HighSaRonix /saronix。

深圳市晶科鑫实业有限公司样品承认书客户代码：物料名称：贴片钟振规格型号：5032 OSC12.288MHZ 1.8～3.3V ±30PPM CMOSP N/ SJK：7N12288G33YC承认签章供应商承认（）公司承认制定审核核准工程师审核批准林雁杨霞黄灏东盖章签署盖章签署日期日期批示：□接受□有条件接受备注：公司地址:深圳市龙岗区天安云谷产业园一期3栋C座12楼1204～1206室电话：传真：Approved by: 黄灏东Checked by: 杨霞Issued by: 玉静霞产品规格书SPECIFICATIONPN / SJK: 7N12288G33YC深圳市晶科鑫实业有限公司SHENZHEN CRYSTAL TECHNOLOGY INDUSTRIAL CO., LTD.公司地址:深圳市龙岗区天安云谷产业园一期3栋C座12楼1204～1206室电话：*************-837传真：*************修改记录版次修改日项目改定内容改定者确认者A1 2015-6-5 初版林雁杨霞1. ELECTRICAL SPECIFICATIONSStandard atmospheric conditionsUnless otherwise specified, the standard range of atmospheric conditions for making measurement and tests are as follow:Ambient temperature : 25±5℃Relative humidity : 40%~70%If there is any doubt about the results, measurement shall be made within the following limits: Ambient temperature : 25±3℃Relative humidity : 40%~70%Measure equipmentElectrical characteristics measured by MD 37WX-05M or equivalen t.Crystal cutting typeThe crystal is using AT CUT (thickness shear mode).Parameters SYMElectrical Spec. Notes MIN TYPE MAX UNITS1 Nominal Frequency 12.288000 MHZ2 FrequencyStabilityAT 25℃±10 PPM Over OperatingTemperature range±20 PPM3 Operating Temperature Topr -40 25 85 ℃4 Storage Temperature Tstg -55 ~ 125 ℃5 Supply Voltage VDD 1.8~3.3 ±10% V6 Input Current Icc 5 mA7 Enable Control Yes Pad18 Output Load : CMOS CL 15 pF9 Output Voltage High VoH 90%VddV10 Output Voltage Low VoL 10%VddV11 Rise Time Tr 5 ns 10%→90%VDDLevel12 Fall Time Tf 5 ns 90%→10%VDDLevel13 Symmetry (Duty ratio) TH/T 45 ~ 55 %14 Start-up Time Tosc 10 ms15 Enable Voltage High Vhi 70%VddV16 Disable Voltage Low Vlo 30%VddV17 Aging ±3 ppm/yr. 1st. Year at 25℃18 Output Disable Delay Time T off 150 us19 Output Enable Delay Time T on 150 us20 Phase Jitter （12KHZ~20MHZ）0.5 1.0 ps2. DIMENSIONS (Units :mm)MARKING3. TEST CIRCUITControl input (output enable/disable)Logic 1 or open on pad 1: Oscillator outputLogic 0 on pad 1 : Disable output to high impedance4. PART NUMBER GUIDESJK -7N— 12288Frequency12.288MHz— GFrequencytolerance—33Supplyvoltage— Y Fan out type X:TTL/CMOS — C Temperaturerange5. WAVEFORM CONDITIONSWaveform measurement system shouldhave a min. bandwidth of 5 times thefrequency being tested.6. OUTPUT ENABLE / DISABLE DELAYThe following figure shows the oscillator timing during normal operation . Note that when the device is in standby,the oscillator stops. When standby is released, the oscillator starts and stable oscillator output occurs after a short delay7. SUGGESTED REFLOW PROFILE8. STRUCTURE ILLUSTRATIONNO COMPONENTSMATERIALS FINISH/SPECIFICATIONS1 LID Kovar (Fe/Co/Ni)2 Base(Package)Ceramic (AI2O3) + Kovar (Fe/Co/Ni)+ Ag/CuColor black 3 PAD Au Tungsten metalize+ Ni plating + Au plating4 Crystal blank SiO25 Conductive adhesiveAg Silicon resin6 Electrode Noble Metal7 IC chip8 Bonding wire Au Pad 1 options : NC is 5wires , EN is 6 wires.9. PACKING10. RELIABILITY TEST SPECIFICATION1.Mechanical EnduranceNo.Test Item Test Methods REF. DOC 1 Drop Test75 cm height,3 times on concrete floor .JIS C67012 Mechanical Shock Device are shocked to half sine wave ( 1000G ) three mutuallyperpendicular axes each 3 times. 0.5m sec.duration timeMIL-STD-202F3 VibrationFrequency range 10 ~ 2000 HzAmplitude 1.52 mm/20GSweep time 20 minutesPerpendicular axes each test time 4 Hrs(Total test time 12 Hrs)MIL-STD-883E4 Gross Leak Standard Sample For Automatic Gross LeakDetector, Test Pressure: 2kg / cm2MIL-STD-883E5 Fine Leak Helium Bomging 4.5 kgf / cm 2 for 2 Hrs6 SolderabilityTemperature 245 ℃ ± 5℃Immersing depth 0.5 mm minimumImmersion time 5 ± 1 secondsFlux Rosin resin methyl alcoholsolvent ( 1 : 4 )MIL-STD-883E2.Environmental EnduranceNo. Test Item Test Methods REF. DOC1 Resistance To SolderingHeatPre-heat temperature 125 ℃Pre-heat time 60 ~ 120 sec.Test temperature 260 ± 5 ℃Test time 10 ± 1 sec.MIL-STD-202F2 High Temp. Storage + 125 ℃ ±3 ℃ for 1000 ± 12 HrsMIL-STD-883E 3 Low Temp. Storage - 40 ℃ ± 3 ℃ for 1000 ± 12 Hrs4 Thermal Shock Total 100 cycles of the following temperaturecycleMIL-STD-883E5 Pressure CookerStorage121 ± 3℃ , RH100% , 2 bar , 240 Hrs JIS C67016 High Temp＆Humidity 85℃ ± 3℃, RH 85% , 1000 Hrs JIS C5023。

晶振的概述石英晶体振荡器是一种高精度和高稳定度的振荡器，被广泛应用于彩电、计算机、遥控器等各类振荡电路中，以及通信系统中用于频率发生器、为数据处理设备产生时钟信号和为特定系统提供基准信号。

石英晶体振荡器是利用石英晶体（二氧化硅的结晶体）的压电效应制成的一种谐振器件，它的基本构成大致是：从一块石英晶体上按一定方位角切下薄片（简称为晶片，它可以是正方形、矩形或圆形等），在它的两个对应面上涂敷银层作为电极，在每个电极上各焊一根引线接到管脚上，再加上封装外壳就构成了石英晶体谐振器，简称为石英晶体或晶体、晶振。

其产品一般用金属外壳封装，也有用玻璃壳、陶瓷或塑料封装的。

晶振有着不同使用要求及特点，通分为以下几类：普通晶振、温补晶振、压控晶振、温控晶振等。

在测试和使用时所供直流电源应没有足以影响其准确度的纹波含量，交流电压应无瞬变过程。

测试仪器应有足够的精度，连线合理布臵，将测试及外围电路对晶振指标的影响降至最低。

SYN3303型高稳晶振频率标准产品概述SYN3303型高稳晶振频率标准是西安同步电子科技有限公司研发生产的一款实用电子产品，内装高稳定度低相噪的恒温晶振，提供高稳定度和低相噪的频率（量值）信号，能够为计量、通信、国防等部门提供高稳定度频率标准信号。

产品功能1)提供2路标准的10MHz正弦信号。

产品特点a)高稳定度；b)低相噪；c)高可靠性；d)可长期连续稳定工作。

典型应用1)时频计量标准器具；2)航空航天、飞行器跟踪与测控、通信、天文、气象；3)同步广播、数字电视、单频网系统、同步采集系统；4)无线基站，网络同步。

技术指标输出信号10MHz 路数2路波形正弦频率准确度±5E-10（出厂时设置）物理接口BNC频率稳定度≤5E-13/1s相位噪声≤-115dBc/Hz(1Hz)≤-130dBc/Hz(10Hz)≤-140dBc/Hz(100Hz)≤-155dBc/Hz(1kHz)≤-155dBc/Hz(10kHz) 谐波≤-40dBc采用高精度GPS授时信号驯服校频技术调节高稳晶振的频率,能够提高晶振的准确度和长期稳定性,同时输出同步于GPS系统的时间同步信号。

晶振（Crystal Oscillator）是一种电子元件，用于产生精确的时钟信号。

晶振的尺寸通常是标准化的，而贴片封装是其中一种常见的封装形式之一。

对于一个8 MHz（兆赫兹）的晶振贴片封装，尺寸可能会有一些变化，但以下是一个常见的尺寸参考：
1. **封装类型**：通常，8 MHz 晶振采用贴片封装，例如，4引脚的SMD（表面贴装装置）封装。

2. **尺寸**：8 MHz 晶振的贴片封装可能是2.0mm x 1.2mm或更小的尺寸，这些尺寸可以根据制造商和型号而异。

3. **引脚数**：典型的贴片封装晶振可能有4个引脚，这些引脚用于连接电路板。

4. **引脚排列**：引脚通常以一定的排列方式出现在晶振的底部，以便焊接到电路板上。

5. **工作电压**：晶振的工作电压通常在3.3V或5V范围内，但也可以有其他工作电压选项。

6. **温度稳定性**：晶振的温度稳定性是一个重要参数，它决定了晶振在不同温度条件下的性能。

7. **频率精度**：8 MHz 晶振的频率精度通常在指定的工作温度范围内，例如±10 ppm （百万分之一）。

请注意，这些尺寸和参数可能会因制造商、型号和应用而有所不同。

如果您需要使用特定的8 MHz 晶振贴片封装，建议查看制造商的数据手册或规格表，以获取详细的尺寸和性能信息。

此外，在设计电路板时，请确保正确选取适合的封装尺寸和引脚排列，以便与您的电路板设计相匹配。

REV DESCRIPTION DATEPREPAPPDG EC20973 7/10/23SMLT/AJOscillator Specification, Hybrid VCXOACMOS, 9x14 mm, J-Lead MOUNT HOLLY SPRINGS, PA 17065 Hi-Rel Standard THE RECORD OF APPROVAL FOR THISDOCUMENT IS MAINTAINED ELECTRONICALLYCODE IDENT NO SIZE DWG. NO.REV1. SCOPE1.1General. This specification defines the design, assembly, and functional evaluation of highreliability, VCXO’s produced by Vectron. Devices delivered to this specification represent the standardized Parts, Materials and Processes (PMP) Program developed, implemented, andcertified for advanced applications and extended environments.1.2Applications Overview. The designs represented by these products were primarily developedfor the MIL-Aerospace community. The lesser Design Pedigrees and Screening Optionsimbedded within DOC206218 bridge the gap between Space and COTS hardware by providing custom hardware with measures of mechanical, assembly and reliability assurance needed for Military or Ruggedized COTS environments.2.APPLICABLE DOCUMENTS2.1Specifications and Standards. The following specifications and standards form a part of thisdocument to the extent specified herein. The issue currently in effect on the date of quotation will be the product baseline, unless otherwise specified. In the event of conflict between thetexts of any references cited herein, the text of this document shall take precedence.MilitaryControlled, General Specification For MIL-PRF-55310 Oscillators,CrystalMicrocircuits, General Specification ForMIL-PRF-38534 HybridStandardsMIL-STD-202 Test Method Standard, Electronic and Electrical Component PartsMIL-STD-883 Test Methods and Procedures for MicroelectronicsOtherDOC206251 Test Specification, DOC206218 Hybrids, Hi-Rel StandardQSP-90100 Quality Systems Manual, VectronDocuments,Materials and Processes, Hi-Rel XOCommonDOC011627 IdentificationSpecificationDOC203982 DPAElectrostatic Discharge PrecautionsforQSP-91502 ProcedureDOC208191 Enhanced Element Evaluation for Space Level Hybrid OscillatorsDOC220429 Packaging Standards, Hi-Rel SeriesREQUIREMENTS3. GENERAL3.1 Classification. All devices delivered to this specification are of hybrid technology conformingto Type 2, Class 2 of MIL-PRF-55310. Primarily developed as a Class S equivalentspecification, options are imbedded within it to also produce Class B, Engineering Model and Ruggedized COTS devices. Devices carry a Class 2 ESDS classification per MIL-PRF-38534.3.2 Item Identification. See paragraph 7.1 for part number configuration.3.3 Absolute Maximum Ratings.a. Supply Voltage Range (V CC): -0.5Vdc to +7.0Vdcb. Storage Temperature Range (T STG): -65°C to +125°Cc. Junction Temperature (T J): +175°Cd. Lead Temperature (soldering, 10 seconds): +300°Ce. Output Source/Sink Current: ±70 mA3.4 Design, Parts, Materials and Processes, Assembly, Inspection and Test.3.4.1 Design. The ruggedized designs implemented for these devices are proven in military andspace applications under extreme environments. The design utilizes a 4-point crystal mount in compliment with Established Reliability (MIL-ER) componentry. When specified, radiationtolerant active devices up to 100krad(Si) (RHA level R) can be included without altering thedevice’s internal topography.3.4.1.1 Design and Configuration Stability. Barring changes to improve performance by reselectingpassive chip component values to offset component tolerances, there will not be fundamental changes to the design or assembly or parts, materials, and processes after first product delivery of that item without notification.3.4.1.2 Environmental Integrity. Designs have passed the environmental qualification levels of MIL-PRF-55310.3.4.2 Prohibited Parts, Materials and Processes. The items listed are prohibited for use in highreliability devices produced to this specification.a. Gold metallization of package elements without a barrier metal.b. Zinc chromate as a finish.c. Cadmium, zinc, or pure tin external or internal to the device.d. Plastic encapsulated semiconductor devices.e. Ultrasonically cleaned electronic parts.f. Heterojunction Bipolar Transistor (HBT) technology.g. ‘getter’ materials3.4.3 Assembly. Manufacturing utilizes standardized procedures, processes, and verificationmethods to produce MIL-PRF-55310 Class S / MIL-PRF-38534 Class K equivalent devices.MIL-PRF-38534 Group B Option 1 in-line inspection is included on radiation hardened partnumbers to further verify lot pedigree. Devices are handled in accordance with Vectrondocument QSP-91502 (Procedure for Electrostatic Discharge Precautions). Elementreplacement will be as specified in MIL-PRF-38534, Rev L.3.4.4 Inspection. The inspection requirements of MIL-PRF-55310 apply to all devices delivered tothis document. Inspection conditions and standards are documented in accordance with theQuality Assurance, ISO-9001 and AS9100 derived, System of QSP-90100.3.4.5 Test. The Screening test matrix of Table 4 is tailored for selectable-combination testing toeliminate costs associated with the development/maintenance of device-specific documentation packages while maintaining performance integrity.3.4.6 Marking. Device marking shall be in accordance with the requirements of MIL-PRF-55310. Inaddition, when devices are identified with laser marking, the Resistance to Solvents testspecified in MIL-PRF-55310 Group C, Mil-PRF-55310 Qualification or MIL-PRF-38534Group B Inspection will not be performed.3.4.7 Ruggedized COTS Design Implementation. Design Pedigree “D” devices (see ¶ 5.2) use thesame robust designs found in the other device pedigrees. They do not include the provisions of traceability or the Class-qualified componentry noted in paragraphs 3.4.3 and 4.1.REQUIREMENTS4. DETAIL4.1 Components4.1.1 Crystals. Cultured quartz crystal resonators are used to provide the selected frequency for thedevices. The optional use of Premium Q swept quartz can, because of its processing to remove impurities, be specified to minimize frequency drift when operating in radiation environments.In accordance with MIL-PRF-55310, the manufacturer has a documented crystal elementevaluation program.4.1.2 Passive Components.4.1.2.1 For Design Pedigree E, where available, resistors shall be Established Reliability, Failure RateR (as a minimum) and capacitors shall be Failure Rate S. Where resistors and capacitors arenot available as ER parts, and for all other passive components, the parts shall be fromhomogeneous manufacturing lots that have successfully completed the Enhanced ElementEvaluation of DOC208191 which meets the requirements of Mil-PRF-38534 Revision L forClass K.4.1.2.2 For Design Pedigrees R, V and X, where available, resistors shall be Established Reliability,Failure Rate R (as a minimum) and capacitors shall be Failure Rate S. Where resistors andcapacitors are not available as ER parts, and for all other passive components, the parts shall be from homogeneous manufacturing lots that have successfully completed the Class K Element Evaluation of Mil-PRF-38534 Revision K for Class K.4.1.2.3 For Design Pedigrees B and C, all passive elements shall comply with the Element Evaluationrequirements of Mil-PRF-55310 Class B as a minimum.4.1.2.4 For Design Pedigree D, the passive elements will be COTs level or higher.4.1.2.5 When used, inductors will be open construction and may use up to 47-gauge wire.4.1.3 Microcircuits.4.1.3.1 For Design Pedigree E, the microcircuits shall be from homogeneous wafer lots that meet theEnhanced Element Evaluation requirements in DOC208191 and meet the requirements of Mil-PRF-38534 Revision L for Class K.4.1.3.2 For Design Pedigree R, V and X, microcircuits shall be from homogeneous wafer lots that havesuccessfully completed the MIL-PRF-38534, Revision K Lot Acceptance Tests for Class K. 4.1.3.3 For Design Pedigrees B and C, microcircuits are procured from wafer lots that havesuccessfully completed the MIL-PRF-55310 Lot Acceptance Tests for Class B as a minimum.4.1.3.4 For Design Pedigree D, microcircuits can be COTs level or higher.4.1.4 Semiconductors (Varactor Diode)4.1.4.1 For Design Pedigree E, the semiconductors shall be from homogeneous wafer lots that meetthe Enhanced Element Evaluation requirements in DOC208191.4.1.4.2 For Design Pedigree R, V and X, semiconductors shall be from homogeneous wafer lots thathave successfully completed the MIL-PRF-38534, Revision K Lot Acceptance Tests for Class K devices as a minimum.4.1.4.3 For Design Pedigree B and C, semiconductors are procured from wafer lots that havesuccessfully completed the MIL-PRF-55310 Lot Acceptance Tests for Class B devices as a minimum.4.1.4.4 For Design Pedigree D, semiconductors can be COTs level or higher.4.1.5 Radiation. Microcircuits for Design Pedigrees E, R and V are certified to 100krad(Si) totalionizing dose (TID), RHA level R (2X minimum margin). NSC, as the original 54ACT designer, rates the SEU LET up to 40 MeV and SEL LET up to 120MeV for the FACT™ family (AN-932). Vectron conducted additional SEE testing in 2008 to verify this performance since our lot wafer testing does not include these parameters and determinations. Varactor diodes are considered radiation tolerant by design.4.1.6 Packages. Packages are procured that meet the construction, lead materials and finishes asspecified in MIL-PRF-55310. All leads are Kovar with gold plating over a nickel underplate.Package lots are evaluated in accordance with the requirements of MIL-PRF-38534. Vectronwill not perform Salt Spray testing as part of MIL-PRF-55310 Group C/Qualification. Inaccordance with MIL-PRF-55310, package evaluation results for salt atmosphere will besubstituted for Salt Spray testing during MIL-PRF-55310 Group C/Qualification.4.1.7 Traceability and Homogeneity. All design pedigrees except option D have active device lotsthat are traceable to the manufacturer’s individual wafer; all other elements and materials aretraceable to their manufacturer and incoming inspection lots. Design pedigrees E, R, V and Xhave homogeneous material. In addition, swept quartz crystals are traceable to the quartz barand the processing details of the autoclave lot. A production lot, as defined by Microchip, is all oscillators that have been kitted and built as a single group. The maximum deliverablequantity with a single lot date code is 225 units. Order quantities that exceed 225 units will be delivered in multiple lot date codes with deliveries separated by 2 weeks. If applicable, eachproduction lot will be kitted with homogeneous material which is then allocated acrossmultiple lot date code builds to satisfy the deliverable order quantity. When ordered, Group CInspection, lot qualifications, and/or DPA will be performed on the first build lot within theproduction lot unless otherwise stated on the purchase order.4.2 Mechanical.4.2.1 Package Outline. See Figure 1.4.2.2Thermal Characteristics. The worst-case thermal characteristics are found in Table 3.4.2.3Lead Forming. When the lead forming option is specified, the applicable leak test specified inscreening will be performed after forming.4.3 Electrical.4.3.1 Input Power. Devices are available with an input voltage of either +5.0 Vdc (±5%) or +3.3 Vdc(±5%). Current is measured, no load, at maximum rated operating voltage.4.3.2 Temperature Range. Operating range is -40°C to +85°C.4.3.3 Absolute Pull Range. Absolute pull range is defined as the minimum guaranteed amount theVCXO can be varied about the center frequency (fo). It accounts for degradations includingtemperature stability (-40°C to +85°C), aging (15 years), radiation effects, power supplyvariations (±5%) and load variations (±10%).4.3.4 Frequency Aging. When tested in accordance with MIL-PRF-55310 Group B inspection, the15-year aging projection shall not cause the minimum APR limit to be exceeded.4.3.5 Operating Characteristics. Symmetrical square wave limits are dependent on the devicefrequency and are in accordance with Table 1. Waveform measurement points and logic limits are in accordance with MIL-PRF-55310. Start-up time is 10.0 msec. maximum.4.3.6Output Load. ACMOS (10kΩ, 15pF) test loads are in accordance with MIL-PRF-55310.5.QUALITY ASSURANCE PROVISIONS AND VERIFICATION5.1Verification and Test. Device lots shall be tested prior to delivery in accordance with theapplicable Screening Option letter as stated by the 15th character of the part number. Table 4tests are conducted in the order shown and annotated on the appropriate process travelers and data sheets of the governing test procedure. For devices that require Screening Options thatinclude MIL-PRF-55310 Group A testing, the Post-Burn-In Electrical Test and the Group AElectrical Test are combined into one operation.5.1.1Screening Options. The Screening Options, by letter, are summarized as:A Modified MIL-PRF-38534 Class KB Modified MIL-PRF-55310 Class B Screening & Group A Quality ConformanceInspection (QCI)C Modified MIL-PRF-55310 (Rev E) Class S Screening & Group A QCID Modified MIL-PRF-38534 Class K with Group B AgingE Modified MIL-PRF-55310 Class B Screening, Groups A & B QCIF Modified MIL-PRF-55310 (Rev E) Class S Screening, Groups A & B QCIG Modified MIL-PRF-55310 Class B Screening & Post Burn-in NominalElectricalsS MIL-PRF-55310 (Rev F) Class S Screening & Groups A & B QCIX Engineering Model (EM)5.2 Optional Design, Test and Data Parameters. The following is a list of design, assembly,inspection, and test options that can be selected or added by purchase order request.a. Design Pedigree (choose one as the 5th character in the part number):(E) Enhanced Element Evaluation, (MIL-PRF-38534 Rev L for Class K components asspecified in DOC208191), 100krad die, Premium Q Swept Quartz(R) Hi-Rel design w/ 100krad Class K die, Premium Q Swept Quartz(V) Hi-Rel design w/ 100krad Class K die, Non-Swept Quartz(X) Hi-Rel design w/ Non-Swept Quartz, Class K die(B) Hi-Rel design w/ Swept Quartz, Class B die(C) Hi-Rel design w/ Non-Swept Quartz, Class B die(D) Hi-Rel design w/ Non-Swept Quartz and commercial grade componentsb. Input Voltage/APR, (L) for +3.3V/±30ppm, (N) for +5.0V/±30ppm and (W) for+5.0V/±50ppm as the 14th characterc. Not Usedd. Radiographic Inspectione. Group C Inspection: MIL-PRF-55310, Rev E (requires 8 destruct specimens)f. Group C Inspection: MIL-PRF-55310, Rev F (requires 8 destruct specimens, includesRandom Vibration, MIL-STD-883, Method 1014 Leak Test and Life Test)g. Group C Inspection: In accordance with MIL-PRF-38534, Table C-Xc, Condition PI(requires 8 destruct specimens – 5 pc. Life, 3 pc. RGA). Subgroup 1 fine leak test to beperformed per MIL-STD-202, Method 112, Condition C.h. Internal Water-Vapor Content (RGA) samples and test performancei. MTBF Reliability Calculationsj. Worst Case Circuit Analysis: (unless otherwise specified, MIL-HDBK-1547)k. Derating and Thermal Analysis (unless otherwise specified, MIL-HDBK-1547 with TjMax = +105°C; Derated Maximum Operating Temp = Tj Max – ΔTj)l. Process Identification Documentation (PID)m. Customer Source Inspection (pre-crystal mount pre-cap, post-crystal mount pre-cap and final). Due to components being mounted underneath the crystal blank, pre-crystalmount pre-cap inspection should be considered.n. Destruct Physical Analysis (DPA): MIL-STD-1580 with exceptions as specified in Vectron DOC203982.o. Qualification: In accordance with MIL-PRF-55310, Rev F, Table IV (requires 16 destruct specimens). Includes Group III, SG1 through SG6 only. ESD (SG7) notperformed.p. Qualification: In accordance with EEE-INST-002, Section C4, Table 3, Level 1 or 2 (requires 11 destruct specimens)q. High Resolution Digital Pre-Cap Photographs (20 Megapixels minimum)r. Hot solder dip of leads with Sn63/Pb37 solder prior to shipping5.2.1 NASA EEE-INST-002. A combination of Design Pedigree R, Option S Screening, andQualification per EEE-INST-002, Section C4, Table 3, meet the requirements of Level 1 and Level 2 device reliability.5.3Test Conditions. Unless otherwise stated herein, inspections are performed in accordance withthose specified in MIL-PRF-55310. Process travelers identify the applicable methods,conditions, and procedures to be used. Examples of electrical test procedures that correspond to MIL-PRF-55310 requirements are shown in Table 2.5.3.1 When MIL-PRF-55310, Revision F was being reviewed for release by manufacturers andusers, Vectron and other organizations recommended that burn-in delta limits not beapplied to logic level measurements due to the inconsistency in attempting to measuresmall changes in logic levels which inherently have ringing in the signal. This isespecially true in higher frequency oscillators measured in automated test systems thatare affected by cable length that is not representative of the user’s application and contactresistance in test fixtures that do not provide a consistent Vcc or Ground connection. Theexact test setup conditions may vary slightly from pre-burn-in to post-burn-in and causesmall artificial deltas in logic level measurements that are not indicative of an issue. Anysignificant changes in logic levels will be reflected in supply current deltas and/or logiclevels that exceed the min/max limits. As a result, we take exception to MIL-PRF-55310,Revision F, Para. 4.4.5 and the delta limit for Output Low Level as specified in 4.4.5(c)shall not be applied to Burn-in PDA.5.4Deliverable Data. The manufacturer supplies the following data, as a minimum, with each lotof devices:a. As applicable to the Screening Option chosen, completed assembly and screening lottravelers, screening data, including radiographic images, and rework history.b. Electrical test variables data, identified by unique serial number.c. Special items when required by purchase order such as Group C, DPA, and RGA data.d. For Design Pedigrees E, R, V, and X, traceability, component LAT, enclosure LAT,and wafer lot specific RLAT data for non-SMD active devices (if applicable).e. Certificate of Conformance.5.5Discrepant Material. All MRB authority resides with the procuring activity.5.6Failure Analysis. Any failure during Qualification or Group C Inspection will be evaluated forroot cause. The customer will be notified after occurrence and upon completion of theevaluation.6.PREPARATION FOR DELIVERY6.1Packaging. Devices will be packaged in a manner that prevents handling and transit damageduring shipping. Devices will be handled in accordance with MIL-STD-1686 for Class 1devices. Devices will be packaged for transport in accordance with DOC220429. Please note that “one unit per package” is available for a fee; however, this service must be requested aspart of the official RFQ.7.ORDERING INFORMATION7.1 Ordering Part Number. The ordering part number is made up of an alphanumeric series of15 characters. Design-affected product options, identified by the parenthetic letter on theOptional Parameters list (¶ 5.2a and b), are included within the device part number.The Part Number breakdown is described as:5116 R 10M00000 L F7.1.1 Model Number. The device model number is the four (4) digit number 5116.7.1.2 Design Pedigree. Class S variants correspond to either letter “E”, “R”, “V” or “X” and aredescribed in paragraph 5.2a. Class B variants correspond to either letter “B” or “C” and aredescribed in paragraph 5.2a. Ruggedized COTS, using commercial grade components,corresponds to letter “D”.7.1.3Output Frequency. The nominal output frequency is expressed in the format as specified inMIL-PRF-55310 utilizing eight (8) characters.7.1.4 Input Voltage (APR). “L” for +3.3V (±30ppm), “N” for +5.0V (±30ppm) and “W” for +5.0V(±50ppm) as the 14th character.7.1.5 Screening Options. The 15th character is the Screening Option (letter A thru G, S or X) selectedfrom Table 4.7.2Optional Design, Test and Data Parameters. Optional test and documentation requirementsshall be specified by separate purchase order line items (as listed in ¶ 5.2c thru s).Frequency Range: 1.0 MHz to 100.0 MHzTemperature Range: -40°C to +85°CPower Supply (Vcc): +3.3Vdc ±5% or +5.0Vdc ±5%Absolute Pull Range: ±30 ppm or ±50 ppm (+/-30 ppm only for +3.3Vdc)Control Voltage (Vc) Range: 0.3V to +3.0V with Vcc = +3.3VControl Voltage (Vc) Range: 0.5V to +4.5V with Vcc = +5.0VSlope: PositiveLinearity: 10% max.F vs. V Gain: 45 ppm/V min. to 105 ppm/V max.Start-up Time: 10.0 ms max.Frequency Range (MHz)Current (mA)(max. no load)Rise / FallTimes 1/(ns max.)Duty Cycle 1/(%)+5.25V +3.465V1 – 15 15 8 10 45 to 55>15 – 40 20 15 5 40 to 60>40 – 60 35 20 5 40 to 60>60 – 85 45 25 3 40 to 60>85 – 100 55 35 3 40 to 601/. Waveform measurement points and logic limits are in accordance with MIL-PRF-55310, Para 3.6.20.3.TABLE 1 - Electrical Performance CharacteristicsOPERATION LISTING REQUIREMENTS ANDCONDITIONS@ all Electrical TestsInput Current (no load) MIL-PRF-55310, Para 4.8.5.1 ************************.MIL-PRF-55310, Para 4.8.6 Output Logic Voltage Levels MIL-PRF-55310, Para 4.8.21.3 Rise and Fall Times MIL-PRF-55310, Para 4.8.22 Duty Cycle MIL-PRF-55310, Para 4.8.23 Frequency Deviation MIL-PRF-55310, Para 4.8.31.1 Linearity MIL-PRF-55310, Para 4.8.31.5Nominal conditions only@ Post Burn-In Electrical onlyOvervoltage Survivability MIL-PRF-55310, Para 4.8.4 Initial Freq. – Temp. Accuracy MIL-PRF-55310, Para 4.8.10.1 Freq. – Voltage Tolerance MIL-PRF-55310, Para 4.8.14 Start-up Time (fast/slow start) MIL-PRF-55310, Para 4.8.29TABLE 2 - Electrical Test ParametersModel # Thermal ResistanceJunction to Caseθjc (°C / W) Δ Junction Temp.T j(°*********)Weight(Grams)5116 31.62 9.13 1.2 Note: The maximum power from Table 2 is used to calculate the worst case Δ JunctionTemperature.TABLE 3 - Typical Thermal Characteristics and WeightTable 3a – Typical Phase Noise at 16MHz, 3.3VTable 3b – Typical Phase Noise at 16MHz, 5.0VTable 3c – Typical Phase Noise at 50MHz, 3.3VTable 3e – Typical Phase Noise at 80MHz, 3.3VTable 3g – Typical Phase Noise at 100MHz, 5.0VPin ConnectionsVoltage1 Control2 GND/Case3 Output4 VccFIGURE 1Model 5116 Package OutlineAPPENDIX A Recommended Land PatternModel 5116。

C L K O S CV C X OT C X OV C T C X OM C FList of products24.000 MHz ～ 80.000 MHz20.000 MHz ～ 80.000 MHz16.000MHz ～ 80.000 MHz12.000 MHz ～ 150.000 MHz9.840 MHz ～ 50.000 MHz10.000MHz ～ 300.000 MHz8.000MHz ～ 60.000 MHz10.000MHz ～ 50.000 MHz9.000MHz ～ 150.000 MHz12.000 MHz ～ 50.000 MHz10.000 MHz ～ 67.000 MHz8.000MHz ～ 10.000 MHz1.20.31.61.60.452.02.00.52.52.50.653.22.50.83.23.20.855.03.21.3 / 1.55.03.21.15.03.51.06.03.50.96.03.51.26.05.01.17.0 / 7.5C L K O S CV C X O T C X O V C T C X O M C F6.000 MHz ～ 70.000 MHz6.000 MHz ～ 70.000 MHz4.000 MHz ～ 50.000 MHz3.579545 MHz ～ 25.000 MHz3.579545 MHz ～ 25.000 MHz3.579545 MHz ～ 32.000 MHz3.579545 MHz ～ 32.000 MHz3.579545 MHz ～ 32.000 MHz3.579545 MHz ～ 61.000 MHz5.01.17.0 / 7.55.01.17.0 / 7.54.51.88.05.51.5 / 1.811.85.02.111.04.33.612.44.74.213.04.74.213.04.74.312.43.112.44.72.612.44.710.52.15.011.35C L K O S CV C X OT C X OV C T C X OM C FList of products3.579545 MHz ～ 61.000 MHz3.579545 MHz ～ 61.000 MHz6.000 MHz ～ 200.000 MHz 10.000 MHz ～ 200.000 MHz20.000 MHz ～ 200.000 MHz1.000 MHz ～ 1.200 MHz1.84320 MHz ～ 200.000 MHz1.84320 MHz ～ 200.000 MHz10.55.011.352.510.55.011.353.57.83.1 / 2.88.02.55.88.03.1 / 2.82.54.48.03.1 / 2.82.58.07.97.13.2 / 2.76.03.2 / 2.77.97.14.57.97.13.2 / 2.711.54.913.5 / 11.54.013.5 / 11.211.34.9C L K O S C V C X O T C X O V C T C X OM C F List of products32.768 kHz 32.768 kHz 32.768 kHz 32.768 kHz 32.768 kHz 32.768 kHz 32.768 kHz 32.768 kHz 30.000 kHz 100.000 kHz32.768 kHz 32.768 kHz 1.20.552.01.50.83.21.81.04.91.51.47.09.0 2.543.02.58.32.542.31.24.73.72.47.94.1C L K O S CV C X OT C X OV C T C X O M C FList of products32.768 kHz 32.768 kHz 32.768 kHz 30.000 kHz ～ 100.000 kHz 30.000 kHz ～ 100.000 kHz 1.45.01.96.01.96.01.24.7X T A LV C X OT C X O V C T C X O M C F List of productsCMOSCMOSCMOSCMOS CMOS CMOSCMOSCMOSCMOSCMOSCMOSCMOS1.60.752.02.00.92.52.51.03.22.00.92.52.51.03.23.21.25.05.01.37.02.00.92.52.51.03.23.21.055.05.01.37.01.60.752.5XTALVCXOTCXOVCTCXOMCFList of productsCMOS CMOS CMOSLVPECL LVPECL LVPECLLVDS LVDS LVDSHCSL HCSL HCSL5.01.37.03.21.055.02.51.03.25.01.57.02.50.93.23.21.25.05.01.57.02.50.93.23.21.25.05.01.57.02.50.93.23.21.25.0X T A LV C X O T C X O V C T C X O M C F List of productsCMOS CMOS CMOS CMOS CMOS CMOS 2.50.93.21.51.03.22.00.92.52.51.03.23.21.25.05.01.37.0XTALCLKOSCTCXOVCTCXOMCFList of productsCMOS CMOS CMOSCMOS CMOSCMOS LVPECL LVPECLLVPECL LVDS2.00.92.52.01.03.22.50.93.23.21.25.03.21.25.05.01.67.05.01.57.03.21.25.05.01.77.02.50.93.2CMOS5.01.77.0LVDS3.21.25.0X T A LC L K O S CT C X O V C T C X O M C FXTALCLKOSCVCXOVCTCXOMCFList of products12CLIPPED SINE CLIPPED SINE CLIPPED SINECLIPPED SINE CLIPPED SINE CLIPPED SINECLIPPED SINECLIPPED SINE CLIPPED SINECLIPPED SINE CLIPPED SINE CLIPPED SINE1.60.72.01.60.72.01.60.72.01.60.72.01.60.72.01.60.72.02.00.82.52.00.82.5VcontrolX T A LC L K O S CV C X O V C T C X OM C F 13CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE 2.00.82.52.00.82.52.00.82.52.00.82.52.50.93.22.50.93.22.50.93.23.21.055.03.21.055.05.01.657.05.01.657.02.50.93.2E/D contro + VcontrollVcontrolXTALCLKOSCVCXOVCTCXOMCFList of products14CMOSCMOS CLIPPED SINE CLIPPED SINECMOS CMOSCLIPPED SINE CMOS CMOSCMOS CLIPPED SINE CLIPPED SINE2.00.92.52.51.03.23.21.055.05.01.37.03.21.55.03.21.55.03.21.55.03.21.55.03.21.55.03.21.55.0X T A LC L K O S CV C X O V C T C X OM C F 15CLIPPED SINE CMOSCMOSCLIPPED SINE CLIPPED SINE CMOSCLIPPED SINE CMOSCLIPPED SINE CLIPPED SINE 5.01.77.05.01.77.05.01.77.05.01.77.05.01.77.05.01.77.05.01.77.05.01.77.03.21.75.03.21.75.0VcontrolXTALCLKOSCVCXOVCTCXOMCFList of products16CMOS CMOS3.21.75.03.21.75.0X T A LC L K O S CV C X O T C X O M C F 17CMOS9.76.514.6X T A LC L K O S CV C X O T C X O V C T C X O List of products1814.575 MHz ～ 150.000 MHz21.400 MHz ～ 90.000 MHz5.01.357.05.00.87.03.81.03.8V C X OT C X OO C X OM C FV C X OT C X OO C X OM C F 2223PACKAGE DATA#1#4#2#3<Top View><#2&#4 : Grounded to metal lid>11 M 260 - 7Package typeLoad capacitance (CL)Circuit calibration conditionFrequency designatorAT -CUTTYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f(ppm)SOLDERING PATTERNM C FM C F 2425TYPICAL TEMPERATURE CHARACTERISTICS2627Actual size0.0165 gm (wt.)32SMX(A)3.2±0.1#4#3282953SMX(B)0.0238 gm (wt.) Actual size53SMX(C)0.0413 gm (wt.)Actual size53SMX(D)0.0564 gm (wt.)Actual size303197SMX(A)0.0585 gm (wt.) Actual size97SMX(B)0.0531 gm (wt.)Actual size97SMX(C)0.0549 gm (wt.)Actual size323394SMX(B)0.1213 gm (wt.)Actual size94SMX(C)0.1266 gm (wt.)Actual size94SMX(D)0.1249 gm (wt.)Actual size3435363793SMX(A)8.0±0.20.1667 gm (wt.)Actual size0.208 gm (wt.)93SMX(B)Actual size383992SMX(CN)11.8±0.20.2568 gm (wt.)Actual size0.2355 gm (wt.)92SMX(D)Actual size86SMX(LPN)0.344 gm (wt.)Actual size86SMX(CSM)0.6703 gm (wt.)Actual size404142434HLB0.5722 gm (wt.)Actual size0.5434 gm (wt.)3HLBActual size25HLB0.402 gm (wt.)Actual sizeC L K O S CV C X OT C X OO C X OM C FC L K O S CV C X OT C X OO C X OM C F4445STANDARD SPECIFICATIONSHOLDER DATAHC-49/U-2H, 3H & 4H STANDARD FREQUENCIES4H 080 -16Holder typeLoad capacitance (CL)Frequency designatorExamplePART NUMBERING GUIDETYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f(ppm)AT -CUTHC-49/U-2H10.5 max.m a x .3.8 max.HC-49/U-3Ha x .HC-49/U-4Ha x .0.336 gm (wt.)HC -49/U -2HActual sizeHC -49/U -3H0.4432 gm (wt.)Actual sizeHC -49/U -4H0.535 gm (wt.)Actual size200-20-40-60-80-100-120-140-160-180-200-220-240-40 -25 -10 +5 +20 +35 +50 +65 +80 +95 +110TYPICAL TEMPERATURE CHARACTERISTICS(゜C )∆f/f (ppm)BT -CUT46T O C X OM C F0.41 gm (wt.)0.336 gm (wt.)UM -4(MJ)0.31 gm (wt.)PACKAGE DATAPART NUMBERING GUIDEUM1(MJ) / 12.288M - 16 / Q / TTiiiPackage type Temperature stability Frequency Frequency toleranceLoad capacitance (CL)-45 -30 -15 0 +15 +30 +45 +60 +75 +90TYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f (ppm)AT -CUTUM-1(MJ), UM-5(MJ), UM-4(MJ)ACTUAL SIZETAPE SPECIFICATIONSA B C D F J L M Reel Dia.Qty/Reel 12.48.224.011.512.01.50.43.33301000pcsA B C D F J L M Reel Dia.Qty/Reel 10.68.224.011.512.01.50.43.33301000pcsUM-5(MJ) & UM-5S(MJ)A B C D F J L M Reel Dia.Qty/Reel 9.28.216.07.512.01.50.43.33301000pcsUM-4(MJ) & UM-4S(MJ)47C L K O S CV C X O T C X OO C X OM C F0.295 gm (wt.)STANDARD SPECIFICATIONSHOLDER DATAUM1 / 15.360M - 16 / J / OOiiiHolder type Temperature stabilityFrequencyFrequency tolerance Load capacitance (CL)PART NUMBERING GUIDETYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f(ppm)AT -CUTSL -CUTUM-1, UM-5 & UM-4Holder UM-1UM-5UM-4H8.0 mm max.6.0 mm max.4.5 mm max.UM-1S, UM-5S & UM-4SHolder UM-1UM-5UM-4H8.0 mm max.6.0 mm max.4.5 mm max.UM -10.354 gm (wt.)Actual sizeUM -5Actual sizeUM -40.254 gm (wt.)Actual size48M C FPACKAGE DATATYPICAL TEMPERATURE CHARACTERISTICSA B C D F J L M Reel Dia.Qty/Reel 19.012.024.011.516.01.50.46.03301000pcsA B C D F J L M Reel Dia.Qty/Reel 17.812.024.011.516.02.00.45.63301000pcsHC-49/UT(MJ)49C L K O S C V C X O T C X OO C X OM C FHOLDER DATASTANDARD SPECIFICATIONSPART NUMBERING GUIDE49 M 2.4576M - 16 / T / XXgggHolder type Temperature stability Circuit calibration condition Frequency tolerance FrequencyLoad capacitance (CL)TYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f(ppm)AT -CUTHC-49 / U, HC-49 / UT10.5 max.3.8 max.Holder HC-49/U HC-49/UT H13.5 mm max.11.2 mm max.HC -49 / U0.975 gm (wt.)Actual sizeHC -49 / UT0.9075 gm (wt.)Actual size50O C X OM C FPACKAGE DATA38.400MHz 11SMX O / OO / iii / 7FrequencyLoad capacitance (CL)Package type Operating temperature rangeFrequency toleranceTemperature stabilityExampleTYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f(ppm)AT -CUTTAPE SPECIFICATIONS51O C X OM C FPACKAGE DATA27.000MHz 21SMX R / TT / iii / 8FrequencyLoad capacitance (CL)Package type Operating temperature rangeFrequency toleranceTemperature stability21SMX#4#32.0±0.1TYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f(ppm)AT -CUT0.00568 gm (wt.)Actual size Actual sizeTAPE SPECIFICATIONS52O C X OM C FPACKAGE DATA48.000MHz 22SMX Q / TT / mll / 8FrequencyLoad capacitance (CL)Package type Operating temperature rangeFrequency toleranceTemperature stabilityExampleTYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f(ppm)AT -CUT22SMX2.5±0.10.00953 gm (wt.)Actual size TAPE SPECIFICATIONS53M C FPACKAGE DATA TAPE SPECIFICATIONS54M C FPACKAGE DATATAPE SPECIFICATIONS55M C FPACKAGE DATA TAPE SPECIFICATIONS110SMX 1.6±0.10.003 gm (wt.) Actual sizeA B C D F J L M Reel Dia.Qty/Reel1.85 1.258.0 3.5 4.00.50.250.651803000pcs5000pcs58Actual sizeActual size0.0055 gm (wt.)212SMX2.0±0.055931SMX 3.2±0.20.0125 gm (wt.) Actual size6061O C X M C FPACKAGE DATA415SMX4.1±0.2TYPICAL TEMPERATURE CHARACTERISTICS0.017 gm (wt.)Actual sizeActual sizeTAPE SPECIFICATIONS62O C M C FPACKAGE DATA52SMX4.9±0.15TYPICAL TEMPERATURE CHARACTERISTICS0.0257 gm (wt.)Actual sizeTAPE SPECIFICATIONS124SMX7.0 max.50.0295 gm (wt.)Actual size63MCF90SMX(N)<Top View>TYPICAL TEMPERATURE CHARACTERISTICSC¨I I(ppm)XY-CUT0.125 gm (wt.)Actual size0.121 gm (wt.)90SMX(S)Actual sizeTAPE SPECIFICATIONSA B C D F J L M Reel Dia.Qty/Reel8.3 4.016.07.58.0 1.60.3 2.73303000pcs90SMX(N)A B C D F J L M Reel Dia.Qty/Reel8.7 3.916.07.58.0-0.4 2.73303000pcs90SMX(S) SOLDERING PATTERN90SMX(N) & 90SMX(S)6465O C X M C F( ) Formerly 2x6(LF)MJNPACKAGE DATA26(LF)MJTYPICAL TEMPERATURE CHARACTERISTICS0.079 gm (wt.)Actual sizeTAPE SPECIFICATIONS66O M C F( ) Formerly 26STF327(LF)H ( ) Formerly 2x6(LF)HPACKAGE DATA26(LF)TAPE SPECIFICATIONSA B C D F J L M Reel Dia.Qty/Reel 9.74.03.516.07.58.0-0.32.153302000pcs 1000pcs0.0535 gm (wt.)Actual sizeQuartz Crystal Units67C L K O S CV C X OT C X O O C X OM C F(*) Shock is defined "three drops from a hight of 75cm onto hardwood."STANDARD SPECIFICATIONSPACKAGE DATA1.2x4.7mm2.0x6.0 mm1.4x5.0 mm3.0x8.0 mm1.2 x 4.7 mm0.015 gm (wt.)Actual size0.026 gm (wt.)1.4 x 5.0 mmActual size0.05 gm (wt.)2.0 x 6.0 mmActual size0.143 gm (wt.)3.0 x 8.0 mmActual sizeTYPICAL TEMPERATURE CHARACTERISTICS(゜C )∆f/f(ppm)XY -CUTActual size0.008 gm (wt.)21SMO2.05±0.1#4#370。

转载自：石英晶体振荡器,简称为晶振,在电子市场中有着不可或缺的重要性。

在手机、手表、电脑、航空、军用、等等诸多事项中都有石英晶振的身影。

有人把晶振比作心脏,我觉得不准确,心脏最主要的功能一般是泵送血液到四肢,是人的核心,举例的人其实是看中了心跳与晶振的频率的类似.我觉得还不如比作你戴的手表(石英手表里就有一颗晶振),没有手表,咱们就不知道什么时候做相应的事情.晶振提供了一个准确的时钟周期,可以保证单片机,计算机等正常工作。

在电脑中晶振于声卡、显卡、时钟芯片等等元器件组成知振荡电路,为主板上最重要的信号发射源。

我来简单介绍一下石英晶振在主板上的各类晶振：声卡上面有着声卡晶振,于声卡芯片相连,常用的频率有24.576MHZ；时钟晶振和时钟芯片相连,常用的频率有14.318MHZ；网卡晶振和网卡芯片连接,常用的频率是25MHZ。

在选购晶振的时候一定要注意几个关键参数,不然的话你花再多大价钱买回去都可能用不了。

标准频率：这可能是晶振采购商和供应商最多挂在嘴边的,也可以说是最重要的。

标准频率指的是晶振的标准输出频率,像32.768K、24M、12M等等都是标准频率,但是为什么有的客户会说供应商的进口晶振频率和他采购时说的不一样呢？有一点点偏差是因为国内的晶振测试仪器个国外的不一样,所以测试出来稍微有一点点偏差是正常的,不影响晶振正常工作；负载电容：负载电容也是许多商家常挂在嘴边的,负载电容是指在电路中跨界晶体两端的总的外界有效电容。

每个石英晶振的每个频率都可以配出非常多的负载电容,所以在采购之前一定要确定好该晶振的负载电容；老化率：这个参数大家应该很好理解吧？就像是人一样,人会越活越老,晶振也一样的会越用越不行。

不管你是国产晶振还是KDS 晶振还是爱普生晶振还是西铁城晶振等等大品牌,只要到了那个点,那它这个晶振就没用了。

EUROQUARTZ LIMITED Blacknell Lane CREWKERNE Somerset UK TA18 7HETel:+44(0)1460230000Fax:+44(0)****************************DESCRIPTIONMiniature surface mount MF crystals incorporate a ceramic substrate and hermetically-sealed metal lid. The combination of compact size and low mass with a high-specification crystal make MF crystals ideal for high density applications as well as hand-held and communications equipment.Miniature size: 6.0mm x 3.5mm height Tight tolerances availableHigh shock and vibration resistanceIdeal for PDAs, GPS, PCMCIA and hand-held equipmentFEATURES OUTLINE & DIMENSIONSFrequency Range AT-Cut Fundamental: 8.0MHz to 50.0MHzAT-Cut 3rd Overtone: 30.0MHz to 125.0MHz Calibration Tolerance at 25ºC*: from ±5ppm(±10, ±20 or ±30ppm standard)Frequency stability -10° to +60°C from ±5ppm -20° to +70°C from ±10ppm -40° to +90°C from ±15ppm -55 to +125°C from ±20ppm Storage Temperature:-55°~+105°C Equivalent Series Resistance:See tableShunt Capacitance (C0): 2pF to 4pF typical, 7pF maximum Load Capacitance (CL): Series or from 8pF to 32pF (Customer specified CL )Ageing: <±3ppm per year at +25°C Drive level:100m W maximumReflow Soldering: 10s maximum, 260°C twice or 180s at 230°C, once.Package: Ceramic base, metal lid,Hermetic sealPackaging: 16mm EIA tape and reel1000 pieces per reelSPECIFICATIONEQUIVALENT SERIES RESISTANCEMF & MF2 CRYSTALSPART NUMBER GENERATION 12.000MHz MF/20/30/-10+60/18pF/60RExample:Nominal FrequencyPackage MF = 4 pad MF2 = 2 padCalibration tolerance at 25°C (±ppm)Temperature Stability over temp. range (±ppm)Operating Temp. Range (°C) (Lower and upper limits)Load Capacitance(Either SR for series or CL in pF) Equivalent Series Resistance (Optional - use when specialvalue is required)MF2MF。

8m晶振贴片封装尺寸
（实用版）
目录
1.8m 晶振的概述
2.8m 晶振的贴片封装
3.8m 晶振的尺寸
正文
一、8m 晶振的概述
8M 晶振，全称 8 兆赫兹晶振，是一种广泛应用于通讯、计算机、家电等领域的石英晶体振荡器。

它的主要作用是产生稳定的高频信号，以确保各类电子设备能够正常运行。

相较于其他类型的晶振，8M 晶振具有输出信号稳定、抗干扰能力强、体积小等优点。

二、8m 晶振的贴片封装
8M 晶振根据封装形式的不同，可以分为多种类型，如 DIP 封装、SMD 封装等。

其中，贴片封装（SMD）是一种常见的封装方式，其特点是体积小、安装方便、焊接可靠性高。

因此，在实际应用中，贴片封装的 8M 晶振受到了广泛的欢迎。

三、8m 晶振的尺寸
在 8M 晶振的贴片封装中，其尺寸通常用长×宽×高的形式表示。

根据不同的生产厂家和型号，8M 晶振的尺寸可能会有所不同。

一般来说，8M 晶振的尺寸在 2.5×2.0×1.2mm 左右。

然而，这仅是一个大致的范围，实际应用中需要根据具体的产品规格来选择合适的晶振尺寸。

总之，8M 晶振作为一款重要的电子元器件，其贴片封装形式和小巧的尺寸使其在各类电子设备中得到了广泛的应用。

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