V40150C中文资料

SA5.0(C)A - SA170(C)A1:1Scale 1:1 on letter size paperDimensions shown below are in:inches [millimeters]Part Weight per unit (gram): 0.4TRADEMARKSACEx™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST ®FASTr™GTO™HiSeC™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.As used herein:ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status DefinitionAdvance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.UHC™VCX™。

STV40NE03L-20N -CHANNEL 30V -0.014Ω-40A -PowerSO-10STripFET ™MOSFETs TYPICAL R DS(on)=0.014Ωs EXCEPTIONAL dv/dt CAPABILITY s LOW GATE CHARGE A 100o C sAPPLICATION ORIENTED CHARACTERIZATIONDESCRIPTIONThis Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size ™”strip-based process.The resulting transistor shows extremely high packing density for low on-resistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.APPLICATIONSs HIGH CURRENT,HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERSs MOTOR CONTROL,AUDIO AMPLIFIERS s DC-DC &DC-AC CONVERTERS IN HIGH PERFORMANCE VRMss AUTOMOTIVE ENVIRONMENT (INJECTION,ABS,AIR-BAG,LAMPDRIVERS,Etc.)INTERNAL SCHEMATIC DIAGRAMMay 2000110PowerSO-10ABSOLUTE MAXIMUM RATINGSSymbol ParameterValue Unit V DS Drain-source Voltage (V GS =0)30V V DGR Drain-gate Voltage (R GS =20k Ω)30V V GS Gate-source Voltage±20V I D Drain Current (continuous)at T c =25o C 40A I D Drain Current (continuous)at T c =100oC 28A I DM (•)Drain Current (pulsed)160A P tot Total Dissipation at T c =25o C 80W Derating Factor0.53W/o C dv/dt(1)Peak Diode Recovery voltage slope 7V/nsT st g Storage Temperature-65to 175o C T jMax.Operating Junction Temperature175oC (•)Pulse width limited by safe operating area(1)I SD ≤40A,di/dt ≤300A/µs,V DD ≤V (BR)DSS ,T j ≤T JMAXTYPE V DSS R DS(on)I D STV40NE03L-2030V<0.020Ω40A1/8THERMAL DATAR thj-case R thj-amb R thc-sinkT l Thermal Resistance Junction-case MaxThermal Resistance Junction-ambient MaxThermal Resistance Case-sink TypMaximum Lead Temperature For Soldering Purpose1.8862.50.5300o C/Wo C/Wo C/Wo CAVALANCHE CHARACTERISTICSSymbol Parameter Max Value UnitI AR Avalanche Current,Repetitive or Not-Repetitive(pulse width limited by T j max,δ <1%)40AE AS Single Pulse Avalanche Energy(starting T j=25o C,I D=I AR,V DD=15V)200mJELECTRICAL CHARACTERISTICS(T J=-40to150o C unless otherwise specified)OFFSymbol Parameter Test Conditions Min.Typ.Max.UnitV(BR)DSS Drain-sourceBreakdown Voltage I D=250µA V GS=0T c=25o CI D=250µA V GS=03027VI DSS Zero Gate VoltageDrain Current(V GS=0)V DS=Max Rating T c=25o CV DS=Max Rating150µAµAI GSS Gate-body LeakageCurrent(V DS=0)V GS=±20V±100nA ON(∗)Symbol Parameter Test Conditions Min.Typ.Max.UnitV GS(th)Gate Threshold Voltage V DS=V GS I D=250µA T c=25o CV DS=V GS I D=250µA10.61.82.53.0VVR DS(on)Static Drain-source OnResistance V GS=10V I D=20A T c=25o CV GS=5V I D=20A T c=25o CV GS=10V I D=20AV GS=5V I D=20A0.0140.020.0230.040.046ΩΩΩΩI D(o n)On State Drain Current V DS>I D(o n)x R DS(on)ma xV GS=10V20A DYNAMICSymbol Parameter Test Conditions Min.Typ.Max.Unitg f s(∗)ForwardTransconductanceV DS>I D(o n)x R DS(on)ma x I D=20A10SC iss C os s C rss Input CapacitanceOutput CapacitanceReverse TransferCapacitanceV DS=25V f=1MHz V GS=018504501602400590210pFpFpFSTV40NE03L-20 2/8ELECTRICAL CHARACTERISTICS(continued)SWITCHING ONSymbol Parameter Test Conditions Min.Typ.Max.Unitt d(on) t r Turn-on TimeRise TimeV DD=15V I D=20AR G=4.7 ΩV GS=5V2516033210nsnsQ g Q gs Q gd Total Gate ChargeGate-Source ChargeGate-Drain ChargeV DD=24V I D=40A V GS=5V29121438nCnCnCSWITCHING OFFSymbol Parameter Test Conditions Min.Typ.Max.Unitt r(Voff) t f t c Off-voltage Rise TimeFall TimeCross-over TimeV DD=24V I D=40AR G=4.7 ΩV GS=5V2512015533160210nsnsnsSOURCE DRAIN DIODESymbol Parameter Test Conditions Min.Typ.Max.UnitI SD I SDM(•)Source-drain CurrentSource-drain Current(pulsed)40160AAV SD(∗)Forward On Voltage I SD=40A V GS=0 1.5Vt rr Q rr I RRM Reverse RecoveryTimeReverse RecoveryChargeReverse RecoveryCurrentI SD=40A di/dt=100A/µsV DD=20V T j=150o C500.93.5nsµCA(∗)Pulsed:Pulse duration=300µs,duty cycle1.5%(•)Pulse width limited by safe operating areaSafe Operating Area Thermal ImpedanceSTV40NE03L-203/8Output Characteristics TransconductanceGate Charge vs Gate-source Voltage Transfer CharacteristicsStatic Drain-source On Resistance Capacitance VariationsSTV40NE03L-20 4/8Normalized Gate Threshold Voltage vs TemperatureSource-drain Diode Forward Characteristics Normalized On Resistance vs TemperatureSTV40NE03L-205/8Fig.1:Unclamped Inductive Load Test Circuit Fig.3:Switching Times Test Circuits For Resistive Load Fig.2:Unclamped Inductive Waveform Fig.4:Gate Charge test CircuitFig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesSTV40NE03L-206/8DIM.mminch MIN.TYP.MAX.MIN.TYP.MAX.A 3.35 3.650.1320.144A10.000.100.0000.004B 0.400.600.0160.024c 0.350.550.0130.022D 9.409.600.3700.378D17.407.600.2910.300E 9.309.500.3660.374E17.207.400.2830.291E27.207.600.2830.300E3 6.10 6.350.2400.250E4 5.906.100.2320.240e 1.270.050F 1.25 1.350.0490.053H 13.8014.400.5430.567h 0.500.002L 1.201.800.0470.071q 1.700.067α0o 8oDETAIL ”A”PLANESEATINGαLA1F A1hADD1======E40.10A E1E3CQA==BBDETAIL ”A”SEA TING PLANE====E261051eBH E M0.25====0068039-CPowerSO-10MECHANICAL DATASTV40NE03L-207/8STV40NE03L-20Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specification mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics©2000STMicroelectronics–Printed in Italy–All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia-Brazil-China-Finland-France-Germany-Hong Kong-India-Italy-Japan-Malaysia-Malta-Morocco-Singapore-Spain-Sweden-Switzerland-United Kingdom-U.S.A.8/8。

常见不良反应事件评价标准常见不良反应事件评价标准(CTCAE) (CTCAE)版本版本 4.0 4.0 4.0出版出版：：2009/5/282009/5/28 （v4.03v4.03：：2010/6/142010/6/14））美国卫生及公共服务部美国卫生及公共服务部国立卫生研究院国立卫生研究院 国家癌症研究所1通用不良事件术语标准V4.0V4.0发布日期：2009-05-28要点参考NCI 不良事件通用术语标准的描述性术语可以用于不良事件报告。

每个不良事件术语应规定分级（严重性）等级。

组成和组织系统系统器官器官器官分类分类分类（（SOC SOC）） 系统器官分类是MedDRA 层次结构的最高水平，是确定解剖学或实验室测试结果进行系统器官分类研究。

CTCAE 术语按照MedDRA 初级系统器官分类进行分组。

每个系统器官分类里，不良事件按照严重程度描述和罗列。

CTCAE 术语术语不良事件是指接受一种医学治疗或产品后出现的任何不利的和非预期的迹象（包括实验室检查异常）、症状、疾病，该事件不一定与接受的治疗或产品有关。

不良事件是一个术语，是用于医疗文件和科学分析的特定事件的独特表示。

每个不良事件术语均是MedDRA 的最小术语。

定义定义简短的定义阐明每一个不良事件（AE）的意义。

分级分级分级是把不良事件（AE）的严重程度进行归类。

CTCAE CTCAE 在基于下述基础原则的基础上运用独特的临床描述将不良事件（AE）的严重程度分为1～5级：1级 轻度；无症状或轻度症状；仅临床或诊断发现；无需治疗； 2级 中度；最小的、局部的或非侵入性治疗指征；年龄相关工具性日常生活活动受限*； 3级 重度或重要医学意义，但不会立即危及生命；住院治疗或延长住院时间指征；致残；自理性日常生活活动受限**； 4级 危及生命，需紧急治疗； 5级 死亡分号（；）在分级描述中表示“或”。

单破折号（-）表示分级不适用。

并不是所有的分级都适用于所有的不良事件（AE）。

晶体管型号大全、常用电阻阻值表、常用稳压电源、数字电位器、74系列芯片功能大全爱拼才会赢的BLOG 地址：/happyingpig晶体管型号大全晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRFU020 50V 15A 42W * * NMOS场效应IRFPG42 1000V 4A 150W * * NMOS场效应IRFPF40 900V 4.7A 150W * * NMOS场效应IRFP9240 200V 12A 150W * * PMOS场效应IRFP9140 100V 19A 150W * * PMOS场效应IRFP460 500V 20A 250W * * NMOS场效应IRFP450 500V 14A 180W * * NMOS场效应IRFP440 500V 8A 150W * * NMOS场效应IRFP353 350V 14A 180W * * NMOS场效应IRFP350 400V 16A 180W * * NMOS场效应IRFP340 400V 10A 150W * * NMOS场效应IRFP250 200V 33A 180W * * NMOS场效应IRFP240 200V 19A 150W * * NMOS场效应IRFP150 100V 40A 180W * * NMOS场效应IRFP140 100V 30A 150W * * NMOS场效应IRFP054 60V 65A 180W * * NMOS场效应IRFI744 400V 4A 32W * * NMOS场效应IRFI730 400V 4A 32W * * NMOS场效应IRFD9120 100V 1A 1W * * NMOS场效应IRFD123 80V 1.1A 1W * * NMOS场效应IRFD120 100V 1.3A 1W * * NMOS场效应IRFD113 60V 0.8A 1W * * NMOS场效应IRFBE30 800V 2.8A 75W * * NMOS场效应IRFBC40 600V 6.2A 125W * * NMOS场效应IRFBC30 600V 3.6A 74W * * NMOS场效应IRFBC20 600V 2.5A 50W * * NMOS场效应IRFS9630 200V 6.5A 75W * * PMOS场效应IRF9630 200V 6.5A 75W * * PMOS场效应IRF9610 200V 1A 20W * * PMOS场效应IRF9541 60V 19A 125W * * PMOS场效应IRF9531 60V 12A 75W * * PMOS场效应IRF9530 100V 12A 75W * * PMOS场效应IRF840 500V 8A 125W * * NMOS场效应IRF830 500V 4.5A 75W * * NMOS场效应IRF740 400V 10A 125W * * NMOS场效应IRF730 400V 5.5A 75W * * NMOS场效应晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRF720 400V 3.3A 50W * * NMOS场效应IRF640 200V 18A 125W * * NMOS场效应IRF630 200V 9A 75W * * NMOS场效应IRF610 200V 3.3A 43W * * NMOS场效应IRF541 80V 28A 150W * * NMOS场效应IRF540 100V 28A 150W * * NMOS场效应IRF530 100V 14A 79W * * NMOS场效应晶体管型号大全DVBCN数字电视中文网日期:06-01-12 17:23:17 作者:dvbcn 点击率：[1739]IRF440 500V 8A 125W * * NMOS场效应IRF230 200V 9A 79W * * NMOS场效应IRF130 100V 14A 79W * * NMOS场效应BUZ20 100V 12A 75W * * NMOS场效应BUZ11A 50V 25A 75W * * NMOS场效应BS170 60V 0.3A 0.63W * * NMOS场效应2SC4582 600V 15A 75W * * NPN2SC4517 550V 3A 30W * * NPN02SC4429 1100V 8A 60W * * NPN2SC4297 500V 12A 75W * * NPN2SC4288 1400V 12A 200W * * NPN2SC4242 450V 7A 40W * * NPN2SC4231 800V 2A 30W * * NPN2SC4119 1500V 15A 250W * * NPN2SC4111 1500V 10A 250W * * NPN2SC4106 500V 7A 50W * 20MHZ NPN2SC4059 600V 15A 130W * * NPN2SC4038 50V 0.1A 0.3W * 180MHZ NPN2SC4024 100V 10A 35W * * NPN2SC3998 1500V 25A 250W * * NPN2SC3997 1500V 15A 250W * * NPN2SC3987 50V 3A 20W 1000 * NPN(达林顿)2SC3953 120V 0.2A 1.3W * 400MHZ NPN2SC3907 180V 12A 130W * 30MHZ NPN2SC3893 1400V 8A 50W * 8MHZ NPN2SC3886 1400V 8A 50W * 8MHZ NPN2SC3873 500V 12A 75W * 30MHZ NPN2SC3866 900V 3A 40W * * NPN2SC3858 200V 17A 200W * 20MHZ NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC3807 30V 2A 1.2W * 260MHZ NPN2SC3783 900V 5A 100W * * NPN2SC3720 1200V 10A 200W * * NPN2SC3680 900V 7A 120W * * NPN2SC3679 900V 5A 100W * * NPN2SC3595 30V 0.5A 1.2W 90 * NPN2SC3527 500V 15A 100W 13 * NPN2SC3505 900V 6A 80W 12 * NPN2SC3460 1100V 6A 100W 12 * NPN2SC3457 1100V 3A 50W 12 * NPN2SC3358 20V 0.15A * * 7000MHZ NPN2SC3355 20V 0.15A * * 6500MHZ NPN2SC3320 500V 15A 80W * * NPN2SC3310 500V 5A 40W 20 * NPN2SC3300 100V 15A 100W * * NPN2SC1855 20V 0.02A 0.25W * 550MHZ NPN2SC1507 300V 0.2A 15W * * NPN2SC1494 36V 6A 40W * 175MHZ NPN2SC1222 60V 0.1A 0.25W * 100MHZ NPN2SC1162 35V 1.5A 10W * * NPN2SC1008 80V 0.7A 0.8W * 50MHZ NPN2SC900 30V 0.03A 0.25W * 100MHZ NPN2SC828 45V 0.05A 0.25W * * NPN2SC815 60V 0.2A 0.25W * * NPN2SC380 35V 0.03A 0.25W * * NPN2SC106 60V 1.5A 15W * * NPN2SB1494 120V 25A 120W * * PNP(达林顿)2SB1429 180V 15A 150W * * PNP2SB1400 120V 6A 25W 1000-20000 * PNP(达林顿)2SB1375 60V 3A 2W * * PNP2SB1335 80V 4A 30W * * PNP2SB1317 180V 15A 150W * * PNP2SB1316 100V 2A 10W 15000 * PNP(达林顿)2SB1243 40V 3A 1W * 70MHZ PNP2SB1240 40V 2A 1W * 100MHZ PNP2SB1238 80V 0.7A 1W * 100MHZ PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SB1185 60V 3A 25W * 75MHZ PNP2SB1079 100V 20A 100W 5000 * PNP(达林顿)2SB1020 100V 7A 40W 6000 * PNP(达林顿)2SB834 60V 3A 30W * * PNP2SB817 160V 12A 100W * * PNP2SB772 40V 3A 10W * * PNP2SB744 70V 3A 10W * * PNP2SB734 60V 1A 1W * * PNP2SB688 120V 8A 80W * * PNP2SB675 60V 7A 40W * * PNP(达林顿)2SB669 70V 4A 40W * * PNP(达林顿)2SB649 180V 1.5A 1W * * PNP2SB647 120V 1A 0.9W * 140MHZ PNP2SB449 50V 3.5A 22W * * PNP2SA1943 230V 15A 150W * * PNP2SA1785 400V 1A 1W * 140MHZ PNP2SA1668 200V 2A 25W * 20MHZ PNP2SA1516 180V 12A 130W * 25MHZ PNP2SA1494 200V 17A 200W * 20MHZ PNP2SA1444 100V 1.5A 2W * 80MHZ PNP2SA1358 120V 1A 10W * 120MHZ PNP2SA1302 200V 15A 150W * * PNP2SA1301 200V 10A 100W * * PNP2SA1295 230V 17A 200W * * PNP2SA1265 140V 10A 30W * * PNP2SA1216 180V 17A 200W * * PNP2SA1162 50V 0.15A 0.15W * * PNP2SA1123 150V 0.05A 0.75W * * PNP2SA1020 50V 2A 0.9W * * PNP2SA1009 350V 2A 15W * * PNP2N6678 650V 15A 175W * * NPN2N5685 60V 50A 300W * * NPN2N6277 180V 50A 300W * * NPN2N5551 160V 0.6A 0.6W * 100MHZ NPN2N5401 160V 0.6A 0.6W * 100MHZ PNP2N3773 160V 16A 150W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2N3440 450V 1A 1W * * NPN2N3055 100V 15A 115W * * NPN2N2907 60V 0.6A 0.4W 200 * NPN2N2369 40V 0.5A 0.3W * 800MHZ NPN2N2222 60V 0.8A 0.5W 45 * NPN9018 30V 0.05A 0.4W * 1G NPN9015 50V 0.1A 0.4W * 150MHZ PNP9014 50V 0.1A 0.4W * 150MHZ NPN9013 50V 0.5A 0.6W * * NPN9012 50V 0.5A 0.6W * * PNP9011 50V 0.03A 0.4W * 150MHZ NPNTIP147 100V 10A 125W * * PNPTIP142 100V 10A 125W * * NPNTIP127 100V 8A 65W * * PNPTIP122 100V 8A 65W * * NPNTIP102 100V 8A 2W * * NPNTIP42C 100V 6A 65W * * PNPTIP41C 100V 6A 65W * * NPNTIP36C 100V 25A 125W * * PNPTIP35C 100V 25A 125W * * NPNTIP32C 100V 3A 40W * * PNPTIP31C 100V 3A 40W * * NPNMJE13007 1500V 2.5A 60W * * NPNMJE13005 400V 4A 60W * * NPNMJE13003 400V 1.5A 14W * * NPNMJE2955T 60V 10A 75W * * NPNMJE350 300V 0.5A 20W * * NPNMJE340 300V 0.5A 20W * * NPNMJ15025 400V 16A 250W * * PNPMJ15024 400V 16A 250W * * NPNMJ13333 400V 20A 175W * * NPNMJ11033 120V 50A 300W * * NPNMJ11032 120V 50A 300W * * NPNMJ10025 850V 20A 250W * * NPNMJ10016 500V 50A 200W * * NPNBUS13A 1000V 15A 175W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型BUH515 1500V 10A 80W * * NPNBU2532 1500V 15A 150W * * NPNBU2527 1500V 15A 150W * * NPNBU2525 1500V 12A 150W * * NPNBU2522 1500V 11A 150W * * NPNBU2520 800V 10A 150W * * NPNBU2508 700V 8A 125W * * NPN常用电阻阻值表常用电阻阻值表电阻本身的阻值常用的有161种1，1.1，1.2，1.3，1.5，1.6，1.82，2.2，2.4，2.7，3，3.3，3.6，3.94.3，4.75.1，5.66.2，6.87.58.29.110，11，12，13，15，16，1820，22，24，2730，33，36，3943，4751，5662，687582，81100，110，120，130，150 ，160，180200，220，240，270300，330，360，390430，470510，560620，6807508209101K，1.1K，1.2K，1.3K，1.5K，1.6K，1.8K2K，2.2K，2.4K，2.7K3K，3.3K，3.6K，3.9K4.3K，4.7K5.1K，5.6K6.2K，6.8K，7.5K8.2K9.1K10K，11K，12K，13K，15K，16K，18K20K，22K，24K，27K30K，33K，36K，39K43K，47K51K，56K62K，68K75K82K91K100K，110K，120K，130K，150K，160K，180K 200K，220K，240K，270K，300K，330K，360K，390K430K，470K510K，560K620K，680K750K，820K910K1M，1.1M，1.2M，1.3M，1.5M，1.6M，1.8M2M，2.2M，2.4M，2.7M3M，3.3M，3.6M，3.9M4.4M，4.7M常用稳压电源常用稳压电源型号(规格) 器件简介79L05 负5V稳压器(100ma)79L06 负6V稳压器(100ma)79L08 负8V稳压器(100ma)79L09 负9V稳压器(100ma)79L12 负12V稳压器(100ma)79L15 负15V稳压器(100ma)79L18 负18V稳压器(100ma)79L24 负24V稳压器(100ma)LM1575T-3.3 3.3V简易开关电源稳压器(1A)LM1575T-5.0 5V简易开关电源稳压器(1A)LM1575T-12 12V简易开关电源稳压器(1A)LM1575T-15 15V简易开关电源稳压器(1A)LM1575T-ADJ 简易开关电源稳压器(1A可调1.23 to 37) LM1575HVT-3.3 3.3V简易开关电源稳压器(1A)LM1575HVT-5.0 5V简易开关电源稳压器(1A)LM1575HVT-12 12V简易开关电源稳压器(1A)LM1575HVT-15 15V简易开关电源稳压器(1A)LM1575HVT-ADJ 简易开关电源稳压器(1A可调1.23 to 37) LM2575T-3.3 3.3V简易开关电源稳压器(1A)LM2575T-5.0 5V简易开关电源稳压器(1A)LM2575T-12 12V简易开关电源稳压器(1A)LM2575T-15 15V简易开关电源稳压器(1A)LM2575T-ADJ 简易开关电源稳压器(1A可调1.23 to 37) LM2575HVT-3.3 3.3V简易开关电源稳压器(1A)LM2575HVT-5.0 5V简易开关电源稳压器(1A)LM2575HVT-12 12V简易开关电源稳压器(1A)LM2575HVT-15 15V简易开关电源稳压器(1A)LM2575HVT-ADJ 简易开关电源稳压器(1A可调1.23 to 37) LM2576T-3.3 3.3V简易开关电源稳压器(3A)LM2576T-5.0 5.0V简易开关电源稳压器(3A)LM2576T-12 12V简易开关电源稳压器(3A)LM2576T-15 15V简易开关电源稳压器(3A)LM2576T-ADJ 简易开关电源稳压器(3A可调1.23V to 37V)LM2576HVT-3.3 3.3V简易开关电源稳压器(3A)LM2576HVT-5.0 5.0V简易开关电源稳压器(3A)LM2576HVT-12 12V简易开关电源稳压器(3A)LM2576HVT-15 15V简易开关电源稳压器(3A)LM2576HVT-ADJ 简易开关电源稳压器(3A可调1.23V to 37V) LM2930T-5.0 5.0V低压差稳压器LM2930T-8.0 8.0V低压差稳压器LM2931AZ-5.0 5.0V低压差稳压器(TO-92)LM2931T-5.0 5.0V低压差稳压器LM2931CT 3V to 29V低压差稳压器(TO-220,5PIN)LM2940CT-5.0 5.0V低压差稳压器LM2940CT-8.0 8.0V低压差稳压器LM2940CT-9.0 9.0V低压差稳压器LM2940CT-10 10V低压差稳压器LM2940CT-12 12V低压差稳压器LM2940CT-15 15V低压差稳压器LM123K 5V稳压器(3A)LM323K 5V稳压器(3A)LM117K 1.2V to 37V三端正可调稳压器(1.5A)LM317LZ 1.2V to 37V三端正可调稳压器(0.1A)LM317T 1.2V to 37V三端正可调稳压器(1.5A)LM317K 1.2V to 37V三端正可调稳压器(1.5A)LM133K 三端可调-1.2V to -37V稳压器(3.0A)LM333K 三端可调-1.2V to -37V稳压器(3.0A)LM337K 三端可调-1.2V to -37V稳压器(1.5A)LM337T 三端可调-1.2V to -37V稳压器(1.5A)LM337LZ 三端可调-1.2V to -37V稳压器(0.1A)LM150K 三端可调1.2V to 32V稳压器(3A)LM350K 三端可调1.2V to 32V稳压器(3A)LM350T 三端可调1.2V to 32V稳压器(3A)LM138K 三端正可调1.2V to 32V稳压器(5A)LM338T 三端正可调1.2V to 32V稳压器(5A)LM338K 三端正可调1.2V to 32V稳压器(5A)LM336-2.5 2.5V精密基准电压源LM336-5.0 5.0V精密基准电压源LM385-1.2 1.2V精密基准电压源LM385-2.5 2.5V精密基准电压源LM399H 6.9999V精密基准电压源LM431ACZ 精密可调2.5V to 36V基准稳压源LM723 高精度可调2V to 37V稳压器LM105 高精度可调4.5V to 40V稳压器LM305 高精度可调4.5V to 40V稳压器MC1403 2.5V基准电压源MC34063 充电控制器SG3524 脉宽调制开关电源控制器TL431 精密可调2.5V to 36V基准稳压源TL494 脉宽调制开关电源控制器TL497 频率调制开关电源控制器TL7705 电池供电/欠压控制器7805 正5V稳压器(1A)7806 正6V稳压器(1A)7808 正8V稳压器(1A)7809 正9V稳压议（1A）7812 正12V稳压器(1A)7815 正15V稳压器(1A)7818 正18V稳压器(1A)7824 正24V稳压器(1A)7905 负5V稳压器(1A)7906 负6V稳压器(1A)7908 负8V稳压器(1A)7909 负9V稳压器（1A）7912 负12V稳压器(1A)7915 负15V稳压器(1A)7918 负18V稳压器(1A)7924 负24V稳压器(1A)78L05 正5V稳压器(100ma)78L06 正6V稳压器(100ma)78L08 正8V稳压器(100ma)78L09 正9V稳压器(100ma)78L12 正12V稳压器(100ma)78L15 正15V稳压器(100ma)78L18 正18V稳压器(100ma)78L24 正24V稳压器(100ma数字电位器数字电位器低噪声数字控制端电压X9015UM8I-2.7：低功耗,低噪声,单DCP,抽头位置掉电置中X9015US8：低功耗,低噪声,单DCP,抽头位置掉电置中X9015US8I：低功耗,低噪声,单DCP,抽头位置掉电置中X9015US8IT1：低功耗,低噪声,单DCP,抽头位置掉电置中X9015US8T1：低功耗,低噪声,单DCP,抽头位置掉电置中X9313TP：抽头位置掉电自动保存X9313TP-3：抽头位置掉电自动保存X9313TPI：8PDIP /-40~85X9313TST1：单DCP,抽头位置掉电自动保存X9313UP：抽头位置掉电自动保存X9313UST1：抽头位置掉电自动保存X9313WP：单DCP,抽头位置掉电自动保存X9313WP-3：单DCP,抽头位置掉电自动保存X9313WPI：单DCP,抽头位置掉电自动保存X9313WS-3：单DCP,抽头位置掉电自动保存X9313WSIT1：单DCP,抽头位置掉电自动保存X9313WST1：单DCP,抽头位置掉电自动保存X9313ZP：单DCP,抽头位置掉电自动保存X9313ZP-3：单DCP,抽头位置掉电自动保存X9313ZS：单DCP,抽头位置掉电自动保存X9313ZSI：单DCP,抽头位置掉电自动保存X93154UM8I-3：低噪音,低电压,32个抽头,数字电位器X93154UX8I-3：低噪音,低电压,32个抽头,数字电位器X93156UM8I-2.7：低功耗,低噪声,单DCP,抽头位置掉电自动保存X93156WM8I-2.7：低功耗,低噪声,单DCP,抽头位置掉电自动保存X9315UM8I-2.7：8MSOP/-40~85X9315UM8I-2.7T1：8MSOP/-40~85X9315WMI-2.7：低功耗,低噪声,单DCP,抽头位置掉电自动保存X9315WMI-2.7T1：低功耗,低噪声,抽头位置掉电自动保存X9315WP：低功耗,低噪声,单DCP,抽头位置掉电自动保存X9315WP-2.7：低功耗,低噪声,单DCP,抽头位置掉电保存X9315WPI：低功耗,低噪声,抽头位置掉电自动保存X9315WS-2.7：低功耗,低噪声,单DCP,抽头位置掉电自动保存X9315WSI-2.7：低功耗,低噪声,单DCP,抽头位置掉电自动保存X9315ZP：低功耗,低噪声,单DCP,抽头位置掉电自动保存X93256UV14I-2.7：低功耗,低噪声,双DCP,抽头位置掉电自动保存X93256WV14I-2.7：低功耗,低噪声,双DCP,抽头位置掉电自动保存X9511WP：单DCP,抽头位置掉电自动保存X9511WPI：单DCP,抽头位置掉电自动保存X9511WSIT1：单DCP,抽头位置掉电自动保存X9511WST1：单DCP,抽头位置掉电自动保存X9511ZP：单DCP,抽头位置掉电自动保存Xicor公司64抽头数字电位器X9221AUP：双DCP,抽头位置掉电自动保存X9221AWP：双DCP,抽头位置掉电自动保存X9221AWPI：抽头位置掉电自动保存X9221AWS：双DCP,抽头位置掉电自动保存X9221AWSI：双DCP,抽头位置掉电自动保存X9221AYP：双DCP,抽头位置掉电自动保存X9221UP：双DCP,抽头位置掉电自动保存X9221WP：双DCP,抽头位置掉电自动保存X9221WS：双DCP,抽头位置掉电自动保存X9221YP：双DCP,抽头位置掉电自动保存X9241AMP：四DCP,抽头位置掉电自动保存X9241AMPI：四DCP,抽头位置掉电自动保存X9241AUP：四DCP,抽头位置掉电自动保存X9241AUPI：抽头位置掉电自动保存X9241AWP：四DCP,抽头位置掉电自动保存X9241AWPI：20PDIP/-40~85X9241AWPIZ：抽头位置掉电自动保存X9241AWS：抽头位置掉电自动保存X9241AWSI：四DCP,抽头位置掉电自动保存X9241AYP：四DCP,抽头位置掉电自动保存X9241MP：四DCP,抽头位置掉电自动保存X9241UP：四DCP,抽头位置掉电自动保存X9241US：四DCP,抽头位置掉电自动保存X9241USI：四DCP,抽头位置掉电自动保存X9409WS24I-2.7：四DCP,抽头位置掉电自动保存X9409WV24I-2.7：抽头位置掉电自动保存X9420WS16I-2.7：单DCP,抽头位置掉电自动保存X9421WS16-2.7：低功耗,低噪声,单DCP,抽头位置掉电自动保存X9421WS16I-2.7：低功耗,低噪声,单DCP,抽头位置掉电自动保存X9428WS16I-2.7：单DCP,抽头位置掉电自动保存X9440WS24I-2.7：双DCP,抽头位置掉电自动保存Xicor公司100抽头数字电位器X9312UST2：单DCP,抽头位置掉电自动保存,高输出端电压X9318WP8：单DCP,抽头位置掉电自动保存,高输出端电压X9318WP8I：单DCP,抽头位置掉电自动保存,高输出端电压X9318WS8IT1：单DCP,抽头位置掉电自动保存,高输出端电压X9319WP8：单DCP,抽头位置掉电自动保存X9319WS8：单DCP,抽头位置掉电自动保存X9C102P：单DCP,抽头位置掉电自动保存X9C102PI：单DCP,抽头位置掉电自动保存X9C102SIT1：抽头位置掉电自动保存X9C102ST1：单DCP,抽头位置掉电自动保存X9C103P：单DCP,抽头位置掉电自动保存X9C103PI：单DCP,抽头位置掉电自动保存X9C103SI：单DCP,抽头位置掉电自动保存X9C103SIT1：单DCP,抽头位置掉电自动保存X9C103ST1：单DCP,抽头位置掉电自动保存X9C104P：单DCP,抽头位置掉电自动保存X9C104PI：单DCP,抽头位置掉电自动保存X9C104S：单DCP,抽头位置掉电自动保存X9C104SI：单DCP,抽头位置掉电自动保存X9C104SIT1：抽头位置掉电自动保存X9C104ST1：单DCP,抽头位置掉电自动保存X9C503P：单DCP,抽头位置掉电自动保存X9C503PI：单DCP,抽头位置掉电自动保存X9C503SI：单DCP,抽头位置掉电自动保存256抽头电位器Xicor公司X9251TS24I：抽头位置掉电自动保存X9258TS24I-2.7：四DCP,抽头位置掉电自动保存X9259TS24I-2.7：四DCP,抽头位置掉电自动保存X9268TS24：双DCP,抽头位置掉电自动保存X9268US24：双DCP,抽头位置掉电自动保存X9271TV14I-2.7：单DCP,抽头位置掉电自动保存X9279TV14I-2.7：单DCP,抽头位置掉电自动保存X95820WV14I-2.7：双DCP,抽头位置掉电自动保存X95840WV20I-2.7：四DCP,抽头位置掉电自动保存Xicor公司1024抽头数字电位器X9110TV14：高分辨率,单DCP,抽头位置掉电自动保存X9110TV14I：高分辨率,单DCP,抽头位置掉电自动保存X9111TV14：高分辨率,单DCP,抽头位置掉电自动保存X9111TV14I-2.7：高分辨率,单DCP,抽头位置掉电自动保存X9118TV14I-2.7：高分辨率,单DCP,抽头位置掉电自动保存Xicor公司数字可调电容X90100M8I：可编程电容器Xicor公司光纤通信数字控制电位器DCPX9520V20I-A：3个DCP,上电复位,2k位串行EEPROM,上电复位电路另两个单独的电压监控器,手动复位,软件可选的复位电压及脉宽,热插拨Microchip 微芯256抽头电位器DCP 数字控制电位器MCP41010-I/P：Microchip 微芯256抽头电位器DCP 数字控制电位器MCP41010-I/SN：Microchip 微芯256抽头电位器DCP 数字控制电位器MCP41050-I/P：Microchip 微芯256抽头电位器DCP 数字控制电位器MCP41050-I/SN：Microchip 微芯256抽头电位器DCP 数字控制电位器MCP41100-I/P：Microchip 微芯256抽头电位器DCP 数字控制电位器MCP41100-I/SN：Microchip 微芯256抽头电位器DCP 数字控制电位器MCP42010-I/P：Microchip 微芯256抽头电位器DCP 数字控制电位器MCP42010-I/SL：Microchip 微芯256抽头电位器DCP 数字控制电位器MCP42050-I/P：Microchip 微芯256抽头电位器DCP 数字控制电位器MCP42050-I/SL：Microchip 微芯256抽头电位器DCP 数字控制电位器MCP42100-I/P：Microchip 微芯256抽头电位器DCP 数字控制电位器MCP42100-I/SL：Microchip 微芯256抽头电位器DCP 数字控制电位器74系列芯片功能大全7400 TTL 2输入端四与非门 7401 TTL 集电极开路2输入端四与非门 7402 TTL 2输入端四或非门 7403 TTL 集电极开路2输入端四与非门 7404 TTL 六反相器 7405 TTL 集电极开路六反相器 7406 TTL 集电极开路六反相高压驱动器 7407 TTL 集电极开路六正相高压驱动器 7408 TTL 2输入端四与门 7409 TTL 集电极开路2输入端四与门 7410 TTL 3输入端3与非门 74107 TTL 带清除主从双J-K触发器 74109 TTL 带预置清除正触发双J-K 触发器 7411 TTL 3输入端3与门 74112 TTL 带预置清除负触发双J-K触发器 7412 TTL 开路输出3输入端三与非门 74121 TTL 单稳态多谐振荡器 74122 TTL 可再触发单稳态多谐振荡器 74123 TTL 双可再触发单稳态多谐振荡器 74125 TTL 三态输出高有效四总线缓冲门 74126 TTL 三态输出低有效四总线缓冲门 7413 TTL 4输入端双与非施密特触发器 7 4132 TTL 2输入端四与非施密特触发器 74133 TTL 13输入端与非门 74136 TTL 四异或门 74138 TTL 3-8线译码器/复工器 74139 TTL 双2-4线译码器/复工器 7414 TTL 六反相施密特触发器 74145 TTL BCD—十进制译码/驱动器 7415 TTL 开路输出3输入端三与门 741 50 TTL 16选1数据选择/多路开关 74151 TTL 8选1数据选择器 74153 TTL 双4选1数据选择器 74154 TTL 4线—16线译码器 74155 TTL 图腾柱输出译码器/分配器 74156 TTL 开路输出译码器/分配器 74157 TTL 同相输出四2选1数据选择器 74158 TTL 反相输出四2选1数据选择器 7416 TTL 开路输出六反相缓冲/驱动器 74160 TTL 可预置BCD异步清除计数器 74161 TTL 可予制四位二进制异步清除计数器 74162 TTL 可预置BCD同步清除计数器 74163 TTL 可予制四位二进制同步清除计数器 74164 TTL 八位串行入/并行输出移位寄存器 74165 TTL 八位并行入/串行输出移位寄存器 74166 TTL 八位并入/串出移位寄存器 74169 TTL 二进制四位加/减同步计数器 7417 TTL 开路输出六同相缓冲/驱动器 74170 TTL 开路输出4×4寄存器堆 74173 TTL 三态输出四位D型寄存器 74174 TTL 带公共时钟和复位六D触发器 74175 TTL 带公共时钟和复位四D触发器 74180 TTL 9位奇数/偶数发生器/校验器 74181 TTL 算术逻辑单元/函数发生器 74185 TTL 二进制—BCD代码转换器74190 TTL BCD同步加/减计数器 74191 TTL 二进制同步可逆计数器 74192 TTL 可预置BC D双时钟可逆计数器 74193 TTL 可预置四位二进制双时钟可逆计数器 74194 TTL 四位双向通用移位寄存器 74195 TTL 四位并行通道移位寄存器 74196 TTL 十进制/二-十进制可预置计数锁存器 74197 TTL 二进制可预置锁存器/计数器 7420 TTL 4输入端双与非门 74 21 TTL 4输入端双与门 7422 TTL 开路输出4输入端双与非门 74221 TTL 双/单稳态多谐振荡器 74240 TTL 八反相三态缓冲器/线驱动器 74241 TTL 八同相三态缓冲器/线驱动器74243 TTL 四同相三态总线收发器 74244 TTL 八同相三态缓冲器/线驱动器 74245 TTL 八同相三态总线收发器 74247 TTL BCD—7段15V输出译码/驱动器 74248 TTL BCD—7段译码/升压输出驱动器 74249 TTL BCD—7段译码/开路输出驱动器 74251 TTL 三态输出8选1数据选择器/复工器 74253 TTL 三态输出双4选1数据选择器/复工器 74256 TTL 双四位可寻址锁存器 74257 TTL 三态原码四2选1数据选择器/复工器 74258 TTL 三态反码四2选1数据选择器/复工器 74259 TTL 八位可寻址锁存器/3-8线译码器 7426 TTL 2输入端高压接口四与非门 74260 TTL 5输入端双或非门 74266 TTL 2输入端四异或非门 7427 TTL 3输入端三或非门 74273 TTL 带公共时钟复位八D触发器 74279 TTL 四图腾柱输出S-R锁存器 7428 TTL 2输入端四或非门缓冲器 74283 TTL 4位二进制全加器 74290 TTL 二/五分频十进制计数器 74293 TTL 二/八分频四位二进制计数器 74295 TTL 四位双向通用移位寄存器 74298 TTL 四2输入多路带存贮开关 74299 TTL 三态输出八位通用移位寄存器 7430 TTL 8输入端与非门 7432 TTL 2输入端四或门 74322 TTL 带符号扩展端八位移位寄存器 74323 TTL 三态输出八位双向移位/存贮寄存器 7433 TTL 开路输出2输入端四或非缓冲器 74347 TTL BCD—7段译码器/驱动器 74352 TTL 双4选1数据选择器/复工器 74353 TT L 三态输出双4选1数据选择器/复工器 74365 TTL 门使能输入三态输出六同相线驱动器74365 TTL 门使能输入三态输出六同相线驱动器 74366 TTL 门使能输入三态输出六反相线驱动器 74367 TTL 4/2线使能输入三态六同相线驱动器 74368 TTL 4/2线使能输入三态六反相线驱动器 7437 TTL 开路输出2输入端四与非缓冲器 74373 TTL 三态同相八D锁存器74374 TTL 三态反相八D锁存器 74375 TTL 4位双稳态锁存器 74377 TTL 单边输出公共使能八D锁存器 74378 TTL 单边输出公共使能六D锁存器 74379 TTL 双边输出公共使能四D 锁存器 7438 TTL 开路输出2输入端四与非缓冲器 74380 TTL 多功能八进制寄存器 7439 TTL 开路输出2输入端四与非缓冲器 74390 TTL 双十进制计数器 74393 TTL 双四位二进制计数器 7440 TTL 4输入端双与非缓冲器 7442 TTL BCD—十进制代码转换器 74352 TTL 双4选1数据选择器/复工器 74353 TTL 三态输出双4选1数据选择器/复工器 74365 TT L 门使能输入三态输出六同相线驱动器 74366 TTL 门使能输入三态输出六反相线驱动器 7 4367 TTL 4/2线使能输入三态六同相线驱动器 74368 TTL 4/2线使能输入三态六反相线驱动器 7437 TTL 开路输出2输入端四与非缓冲器 74373 TTL 三态同相八D锁存器 74374 T TL 三态反相八D锁存器 74375 TTL 4位双稳态锁存器 74377 TTL 单边输出公共使能八D 锁存器 74378 TTL 单边输出公共使能六D锁存器 74379 TTL 双边输出公共使能四D锁存器 7438 TTL 开路输出2输入端四与非缓冲器 74380 TTL 多功能八进制寄存器 7439 TTL 开路输出2输入端四与非缓冲器 74390 TTL 双十进制计数器 74393 TTL 双四位二进制计数器 7440 TTL 4输入端双与非缓冲器 7442 TTL BCD—十进制代码转换器 74447 TTL BCD—7段译码器/驱动器 7445 TTL BCD—十进制代码转换/驱动器 74450 TTL 16:1多路转接复用器多工器 74451 TTL 双8:1多路转接复用器多工器 74453 TTL 四4:1多路转接复用器多工器 7446 TTL BCD—7段低有效译码/驱动器 74460 TTL 十位比较器 74461 TTL 八进制计数器 74465 TTL 三态同相2与使能端八总线缓冲器 74466 TTL 三态反相2与使能八总线缓冲器 74467 TTL 三态同相2使能端八总线缓冲器 74468 TTL 三态反相2使能端八总线缓冲器 74469 TTL 八位双向计数器 7447 TTL BCD—7段高有效译码/驱动器 7448 TTL BCD —7段译码器/内部上拉输出驱动 74490 TTL 双十进制计数器74491 TTL 十位计数器 7449 8 TTL 八进制移位寄存器 7450 TTL 2-3/2-2输入端双与或非门 74502 TTL 八位逐次逼近寄存器 74503 TTL 八位逐次逼近寄存器 7451 TTL 2-3/2-2输入端双与或非门 74533 TTL 三态反相八D锁存器 74534 TTL 三态反相八D锁存器 7454 TTL 四路输入与或非门 7454 0 TTL 八位三态反相输出总线缓冲器 7455 TTL 4输入端二路输入与或非门 74563 TTL 八位三态反相输出触发器 74564 TTL 八位三态反相输出D触发器 74573 TTL 八位三态输出触发器 74574 TTL 八位三态输出D触发器 74645 TTL 三态输出八同相总线传送接收器 74 670 TTL 三态输出4×4寄存器堆 7473 TTL 带清除负触发双J-K触发器 7474 TTL 带置位复位正触发双D触发器 7476 TTL 带预置清除双J-K触发器 7483 TTL 四位二进制快速进位全加器 7485 TTL 四位数字比较器 7486 TTL 2输入端四异或门 7490 TTL 可二/五分频十进制计数器 7493 TTL 可二/八分频二进制计数器 7495 TTL 四位并行输入\输出移位寄存器 7497 TTL 6位同步二进制乘法器常用74系列标准数字电路的中文名称资料器件代号器件名称 74 74LS 74HC 00 四2输入端与非门√ √ √ 01 四2输入端与非门(OC) √ √ 02 四2输入端或非门√ √ √ 03 四2输入端与非门(OC) √ √ 04 六反相器√ √ √ 05 六反相器(OC) √ √ 06 六高压输出反相器(OC,30V) √ √ 07 六高压输出缓冲,驱动器(OC,30V) √ √ √ 08 四2输入端与门√ √ √ 09 四2输入端与门(OC) √ √ √ 10 三3输入端与非门√ √ √ 11 三3输入端与门√ √ 12 三3输入端与非门(OC) √ √ √ 13 双4输入端与非门√ √ √ 14 六反相器√ √ √ 15 三3输入端与门 (OC) √ √ 16 六高压输出反相器(OC,15V) √ 17 六高压输出缓冲,驱动器(OC,15V) √ 20 双4输入端与非门√ √ √ 21 双4输入端与门√ √ √ 22 双4输入端与非门(OC) √ √ 25 双4输入端或非门(有选通端) √ √ √ 26 四2输入端高压输出与非缓冲器√ √ √ 27 三3输入端或非门√ √ √ 28 四2输入端或非缓冲器√ √ √ 30 8输入端与非门√ √ √ 32 四2输入端或门√ √ √ 33 四2输入端或非缓冲器(OC) √ √ 37 四2输入端与非缓冲器√ √ 38 四2输入端与非缓冲器(OC) √ √ 40 双4输入端与非缓冲器√ √ √ 42 4线-10线译码器(BCD输入) √ √ 43 4线-10线译码器(余3码输入) √ 4 4 4线-10线译码器(余3葛莱码输入) √ 48 4线-7段译码器√ 49 4线-7段译码器√ 50 双2路2-2输入与或非门√ √ √ 51 2路3-3输入,2路2-2输入与或非门√ √ √ 52 4路2-3-2-2输入与或门√ 53 4路2-2-2-2输入与或非门√ 54 4路2-3-3-2输入与或非门√ √ 55 2路4-4输入与或非门√ 60 双4输入与扩展器√ √ 61 三3输入与扩展器√ 62 4路2-3-3-2输入与或扩展器√ 64 4路4-2-3-2输入与或非门√ 65 4路4-2-3-2输入与或非门(OC) √ 70 与门输入J-K触发器√ 71 与或门输入J-K触发器√ 72 与门输入J-K触发器√ 74 双上升沿D型触发器√ √ 78 双D型触发器√ √ 85 四位数值比较器√ 86 四2输入端异或门√ √ √ 87 4位二进制原码/反码√ 95 4位移位寄存器√ 101 与或门输入J-K触发器√ 102 与门输入J-K触发器√ 107 双主-从J-K触发器√ 108 双主-从J-K触发器√ 109 双主-从J-K触发器√ 110 与门输入J-K 触发器√ 111 双主-从J-K触发器√ √ 112 双下降沿J-K触发器√ 113 双下降沿J-K 触发器√ 114 双下降沿J-K触发器√ 116 双4位锁存器√ 120 双脉冲同步驱动器√ 121 单稳态触发器√ √ √ 122 可重触发单稳态触发器√ √ √ 123 可重触发双稳态触发器√ √ √ 125 四总线缓冲器√ √ √ 126 四总线缓冲器√ √ √ 128 四2输入端或非线驱动器√ √ √ 132 四2输入端与非门√ √ √。

150KHz 40V 3A开关电流降压型DC-DC转换器XL1507特点⏹ 4.5V到40V宽输入电压范围⏹输出版本固定5V和ADJ可调⏹输出电压1.23V到37V可调⏹最大占空比100%⏹最小压差1.5V⏹固定150KHz开关频率⏹最大3A开关电流⏹内置功率三极管⏹高效率⏹出色的线性与负载调整率⏹EN脚TTL关机功能⏹EN脚迟滞功能⏹内置热关断功能⏹内置限流功能⏹内置二次限流功能⏹TO252-5L封装应用⏹LCD电视与显示屏⏹数码相框⏹机顶盒⏹路由器⏹通讯设备供电描述XL1507是一款高效降压型DC-DC转换器，固定150KHz开关频率，可以提供最高3A输出电流能力，具有低纹波，出色的线性调整率与负载调整率特点。

XL1507内置固定频率振荡器与频率补偿电路，简化了电路设计。

PWM控制环路可以调节占空比从0~100%之间线性变化。

内置使能功能、输出过电流保护功能。

当二次限流功能启用时，开关频率从150KHz降至50KHz。

内部补偿模块可以减少外围元器件数量。

图1.XL1507封装150KHz 40V 3A 开关电流降压型DC-DC 转换器 XL1507引脚配置EN GND SW VINFB 12345TO252-5LMetal Tab GND图2. XL1507引脚配置表1.引脚说明引脚号 引脚名称 描述1 VIN 电源输入引脚，支持DC4.5V~40V 宽范围电压操作，需要在VIN 与GND 之间并联电解电容以消除噪声。

2 SW 功率开关输出引脚，SW 是输出功率的开关节点。

3 GND 接地引脚。

4 FB 反馈引脚，通过外部电阻分压网络，检测输出电压进行调整，参考电压为1.23V 。

5 EN使能引脚，低电平工作，高电平关机，悬空时为低电平。

150KHz 40V 3A 开关电流降压型DC-DC 转换器 XL1507方框图EA1.23V ReferenceGNDFB3.3V 1.23VEA COMPOscillator 150KHz3.3V Regulator Start UpLatchCOMP2COMP1DriverThermal ShutdowninENSW220mV 200mV44m ΩCurrent LimitR2R1=2.5K5V R2=7.6KADJ R2=0 R1=OPENSwitch图3. XL1507方框图典型应用XL1507-5.0CIN 470uf 35VC1 105330uf 35VD1 L1 33uh/3A+12VLOAD13524GNDVINFBSWEN ON OFF 5V/3ACOUT 1N5820图4. XL1507系统参数测量电路（12V-5V/3A ）150KHz 40V 3A 开关电流降压型DC-DC 转换器 XL1507订购信息产品型号 打印名称封装方式包装类型 XL1507-ADJE1 XL1507-ADJE1 TO252-5L 2500只每卷 XL1507-5.0E1 XL1507-5.0E1TO252-5L2500只每卷XLSEMI 无铅产品，产品型号带有“E1”后缀的符合RoHS 标准。

PMS150C系列8位IO类型单片机数据手册第0.01版2016年3月17日Copyright 2016 by PADAUK Technology Co., Ltd., all rights reserved重要声明应广科技保留权利在任何时候变更或终止产品，建议客户在使用或下单前与应广科技或代理商联系以取得最新、最正确的产品信息。

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PMS150C不适用于交流供电阻容降压或者电源纹波大，EFT要求高的应用，请注意不要将PMS150C用于这种特殊要求的产品中。

提供本文档的中文简体版是为了便于了解，请勿忽视文中英文的部份，因为其中提供有关产品性能以及产品使用的有用信息，应广科技暨代理商对于文中可能存在的差错不承担任何责任，建议参考本档英文版。

目录1. 单片机特点 (7)1.1. 系统功能 (7)1.2. CPU特点 (7)2. 系统概述和方框图 (8)3. 引脚功能说明 (9)4. 器件电气特性 (10)4.1 直流交流电气特性 (10)4.2 工作范围 (11)4.3 IHRC频率与VDD关系曲线图 (12)4.4 ILRC频率与VDD关系曲线图 (12)4.5 IHRC频率与温度关系曲线图（校准到16MHz） (13)4.6 ILRC频率与温度关系曲线图 (13)4.7 工作电流与VDD、系统时钟CLK=IHRC/n曲线图 (14)4.8 工作电流与VDD、系统时钟CLK=ILRC/n曲线图 (14)4.9 引脚上拉电阻曲线图 (15)4.10 引脚输出驱电流(Ioh)与灌电流(Iol) 曲线图 (15)4.11 引脚输出输入高电压与低电压(V IH / V IL) 曲线图 (16)5. 功能概述 (17)5.1程序内存——OTP (17)5.2 开机流程 (17)5.3 数据存储器 – SRAM (18)5.4 振荡器和时钟 (18)5.4.1内部高频振荡器和内部低频振荡 (18)5.4.2芯片校准 (18)5.4.3 IHRC频率校准与系统时钟 (19)5.4.4系统时钟和LVR基准位 (20)5.5 16位定时器 (Timer16) (21)5.6 看门狗定时器 (22)5.7 中断 (22)5.8 省电与掉电 (24)5.8.1省电模式（stopexe） (24)5.8.2掉电模式（stopsys） (25)5.8.3 唤醒 (26)5.9 IO引脚 (27)5.10 复位和LVR (28)5.10.1复位 (28)6. IO 寄存器 (29)6.1 标志寄存器（flag），IO 地址 =0x00 (29)6.2 堆栈指针寄存器（sp），IO地址 =0x02 (29)6.3 时钟控制寄存器（clkmd），IO地址 =0x03 (29)6.4 中断允许寄存器（inten），IO地址 =0x04 (30)6.6 Timer16控制寄存器（t16m），IO地址 =0x06 (30)6.7 外部晶体振荡器控制寄存器（eoscr，只写），IO地址 =0x0a (31)6.8 中断缘选择寄存器 (integs), IO地址 =0x0c (31)6.9 端口A数字输入启用寄存器(padier), IO 地址 =0x0d (31)6.10 端口A数据寄存器（pa），IO地址 =0x10 (31)6.11 端口A控制寄存器（pac），IO地址 =0x11 (31)6.12 端口A上拉控制寄存器（paph），IO地址 =0x12 (31)6.13 杂项寄存器(misc), IO 地址 =0x3b (32)7. 指令 (33)7.1 数据传输类指令 (34)7.2 算术运算类指令 (36)7.3 移位元元运算类指令 (38)7.4 逻辑运算类指令 (39)7.5 位运算类指令 (41)7.6 条件运算类指令 (41)7.7 系统控制类指令 (42)7.8 指令执行周期综述 (44)7.9 指令影响标志的综述 (45)8. 特别注意事项 (46)8.1. 使用IC时 (46)8.1.1. IO使用与设定 (46)8.1.2. 中断 (46)8.1.3. 切换系统时钟 (47)8.1.4. 掉电模式、唤醒以及看门狗 (47)8.1.5. TIMER16溢出时间 (47) (47)8.1.6. LVR8.1.7. 指令 (47)8.1.8. RAM定义限制 (47)8.1.9. 烧录方法 (48)8.2. 使用ICE时 (48)修订历史：修订日期描述初版0.01 2016/3/17PMS150B 和PMS150C 主要差异表PMS150B 与PMS150C 主要差异列举如下：项目 功能PMS150BPMS150C1 ILRC 频率 110KHz@5.0V ，25oC 62KHz@5.0V ，25o C （VDD 变化对ILRC 有影响） 2 LVR 2.8V,2.2V,2.0V 4.0V,3.5V,3.0V,2.75V 2.5V,2.2V,2.0V,1.8V 3 RAM 60 bytes64 bytes 4 PA5口输入模式上拉电阻 没有有5 工作温度0o C ~70o C -20o C ~70o C6省电模式功耗（stopexe ） 40uA@3.3V3 uA@3.3V7 IO 输出电流 17mA/-7mA@5.0V普通模式：14.5mA/-10.5mA@5.0V低驱动模式：5mA/-3.5mA@5.0V 8 看门狗定时器溢时 4096,16384,65536 ILRC 时钟周期8192,16384,65536,262144 ILRC 时钟周期9 唤醒时间 快速模式：1024 T IHRC 普通模式：1024 T ILRC 快速模式：32 T ILRC 普通模式：2048 T ILRC 10 开机时间快速模式：2048 T IHRC 普通模式：1024 T ILRC快速模式：32 T ILRC 普通模式：2048 T ILRC 11系统保留OTP 区 0x3F8~0x3FF(8 word) 0x3F0~0x3FF(16 word)12 ILRC 做系统时钟源 ILRC,ILRC/4 ILRC,ILRC/4,ILRC/16 13支持ICE 类型PDK3S-I-001/002/003, 5S-I-S015S-I-S011. 单片机特点1.1. 系统功能◆时钟模式：内部高频振荡器、内部低频振荡器◆硬件16位定时器◆快速唤醒功能◆ 6 个带输入上拉电阻IO引脚，且做输出时具有可选的电流驱动能力◆1个外部中断输入引脚◆每个引脚都可弹性设定唤醒功能◆8级LVR可选◆工作频率0 ~ 8MHz@VDD≧3V; 0 ~ 4MHz@VDD≧2.2V; 0 ~ 2MHz@VDD≧2.0V;◆工作电压：2.0V ~ 5.5V◆工作温度：-20 o C ~70 o C◆功耗特性：I operating ~ 0.3mA@1MIPS, VDD=3.3VI operating ~ 13uA@ILRC=62KHz, VDD=3.3VI powerdown ~ 0.5uA@VDD=3.3V1.2. CPU特点◆工作模式：单一处理单元的工作模式◆ 1KW OTP程序内存◆ 64字节数据存储器◆提供79条指令◆绝大部分指令都是单周期（1T）指令◆可程序设定的堆栈深度◆所有的数据存储器都可当数据指针（index pointer）◆独立的IO地址以及存储地址方便程序开发2. 系统概述和方框图PMS150C是一个IO类型、完全静态，以OTP为程序存储基础的单片机。

本手册中的描述以手机中文版本及其默认设置为基础。

当您从包装盒中取出电池时，电池尚未充电。

设备充电时，请勿取出电池。

如您拆卸或擅改设备的外壳，产品将失去保修的资格。

请注意保护好设备屏幕，防止磨损、划伤或挤压，此类损伤均被认为是人为损坏。

II 知识产权声明Copyright © 2011 宏达国际电子股份有限公司。

版权所有，并保留一切权利。

HTC 标志、HTC quietly brilliant 标志 和 HTC Sense 均为宏达国际电子股份有限公司的商标及/或服务标记。

Copyright © 2011 Google Inc. 已获使用授权。

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Copyright © 2011 Adobe Systems Incorporated。

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microSD 为 SD Card Association 的商标。

本手册中所提及的其他公司、产品和服务名称为其分别拥有者的商标、注册商标或服务标记。

宏达国际电子股份有限公司与宏达通讯有限公司（统称 HTC ），HTC 保留随时修改本文件之内容的权利，恕不事先通知。

未经 HTC 事前书面同意，不能以任何形式或任何方式复制或传送本文件的任何部分，不论为电子或机械方式，包括摄影、录像或储存于可存取的系统中，亦不能以任何形式翻译为任何语言。

V10150C, VF10150C, VB10150C & VI10150CVishay General SemiconductorDocument Number: 89068For technical questions within your region, please contact one of the following:High-Voltage Trench MOS Barrier Schottky RectifierUltra Low V F = 0.63 V at I F = 3 AFEATURES•Trench MOS Schottky technology •Low forward voltage drop, low power losses •High efficiency operation•Meets MSL level 1, per J -STD-020, LFmaximum peak of 245 °C (for TO-263AB package) •Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) •Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECTYPICAL APPLICATIONSFor use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.MECHANICAL DATACase: TO-220AB, ITO-220AB, TO-263AB and TO-262AAEpoxy meets UL 94V-0 flammability ratingTerminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102E3 suffix for consumer grade, meets JESD 201 class 1A whisker testPolarity: As markedMounting Torque:10 in-lbs maximumPRIMARY CHARACTERISTICSI F(AV) 2 x 5 A V RRM 150 V I FSM 60 A V F at I F = 5 A 0.69 V T J max.150 °C12312KMAXIMUM RATINGS (T A = 25°C unless otherwise noted)PA AMETESYMBOL V10150CVF10150CVB10150CVI10150CUNITMaximum repetitive peak reverse voltage V RRM 150V Maximum average forward rectified current (Fig. 1)per device per diodeI F(AV)105APeak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode I FSM 60 A Isolation voltage (ITO-220AB only)from terminal to heatsink t = 1 minV AC 1500V Operating junction and storage temperature rangeT J , T STG- 55 to + 150°CV10150C, VF10150C, VB10150C & VI10150CVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 89068Notes:(1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 msRATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PA AMETE TEST CONDITIONS SYMBOL TYP.MAX.UNITBreakdown voltageI R = 1.0 mA T A = 25 °C V BR150 (minimum)-VInstantaneous forward voltage per diode (1)I F = 3 AI F = 5 A T A = 25 °CV F0.820.99-1.41VI F = 3 A I F = 5 A T A = 125 °C 0.630.69-0.75Reverse current per diode (2)V R = 100 VT A = 25 °C T A = 125 °C I R0.50.5--µA mA V R = 150 VT A = 25 °C T A = 125 °C-1.010010µA mATHERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PA AMETE SYMBOL V10150C VF10150C VB10150CVI10150CUNITTypical thermal resistance per diodeR θJC4.06.54.04.0°C/WORDERING INFORMATION (Example)PACKAGE PREFERRED P/N UNIT WEIGHT (g)PACKAGE CODEBASE QUANTITYDELIVERY MODETO-220AB V10150C-E3/4W 1.874W 50/tube T ube ITO-220AB VF10150C-E3/4W 1.744W 50/tube T ube TO-263AB VB10150C-E3/4W 1.394W 50/tube T ube TO-263AB VB10150C-E3/8W 1.388W 800/reel T ape and reelTO-262AAVI10150C-E3/4W1.454W50/tubeT ubeFigure 1. Maximum Forward Current Derating CurveFigure 2. Forward Power Loss Characteristics Per DiodeV10150C, VF10150C, VB10150C & VI10150CVishay General SemiconductorDocument Number: 89068For technical questions within your region, please contact one of the following:Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode Figure 5. Typical Junction Capacitance Per DiodeFigure 6. Typical Transient Thermal Impedance Per DiodeFigure 7. Typical Transient Thermal Impedance Per DiodeV10150C, VF10150C, VB10150C & VI10150CVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 89068PACKAGE OUTLINE DIMENSIONS in inches (millimeters)Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网Document Number: 。

V30150C, VF30150C, VB30150C & VI30150CVishay General SemiconductorDocument Number: 89047For technical questions within your region, please contact one of the following:Dual High-Voltage Trench MOS Barrier Schottky RectifierUltra Low V F = 0.56 V at I F = 5 AFEATURES•Trench MOS Schottky technology •Low forward voltage drop, low power losses •High efficiency operation•Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) •Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) •Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONSFor use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.MECHANICAL DATACase: TO-220AB, ITO-220AB, TO-263AB and TO-262AAEpoxy meets UL 94V-0 flammability ratingTerminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102E3 suffix for consumer grade, meets JESD 201 class 1A whisker testPolarity: As markedMounting Torque:10 in-lbs maximumPRIMARY CHARACTERISTICSI F(AV) 2 x 15 A V RRM 150 V I FSM 140 A V F at I F = 15 A 0.71 V T J max.150 °C12312KMAXIMUM RATINGS (T A = 25°C unless otherwise noted)PA AMETESYMBOL V30150CVF30150CVB30150CVI30150CUNITMaximum repetitive peak reverse voltage V RRM 150V Maximum average forward rectified current (Fig. 1)per device per diodeI F(AV)3015APeak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode I FSM 140 A Isolation voltage (ITO-220AB only)from terminal to heatsink t = 1 minV AC 1500V Operating junction and storage temperature rangeT J , T STG- 55 to + 150°CV30150C, VF30150C, VB30150C & VI30150CVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 89047Notes:(1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 msRATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PA AMETE TEST CONDITIONS SYMBOL TYP.MAX.UNITBreakdown voltageI R = 1.0 mA T A = 25 °C V BR150 (minimum)-VInstantaneous forward voltage per diode (1)I F = 5 AI F = 7.5 A I F = 15 A T A = 25 °CV F0.720.811.11--1.36VI F = 5 A I F = 7.5 A I F = 15 A T A = 125 °C 0.560.610.71--0.79Reverse current per diode (2)V R = 100 VT A = 25 °C T A = 125 °C I R1.52--µA mA V R = 150 VT A = 25 °C T A = 125 °C-420020µA mATHERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PA AMETE SYMBOL V30150C VF30150C VI30150CVI30150CUNITTypical thermal resistance per diodeR θJC2.24.52.22.2°C/WORDERING INFORMATION (Example)PACKAGE PREFERRED P/N UNIT WEIGHT (g)PACKAGE CODEBASE QUANTITYDELIVERY MODETO-220AB V30150C-E3/4W 1.894W 50/tube T ube ITO-220AB VF30150C-E3/4W 1.754W 50/tube T ube TO-263AB VB30150C-E3/4W 1.394W 50/tube T ube TO-263AB VB30150C-E3/8W 1.398W 800/reel T ape and reelTO-262AAVI30150C-E3/4W1.464W50/tubeT ubeFigure 1. Maximum Forward Current Derating CurveFigure 2. Forward Power Loss Characteristics Per DiodeV30150C, VF30150C, VB30150C & VI30150CVishay General SemiconductorDocument Number: 89047For technical questions within your region, please contact one of the following:Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode Figure 5. Typical Junction CapacitanceFigure 6. Typical Transient Thermal Impedance Per DiodeFigure 7. Typical Transient Thermal Impedance Per DiodeV30150C, VF30150C, VB30150C & VI30150CVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 89047PACKAGE OUTLINE DIMENSIONS in inches (millimeters)Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网Document Number: 。

V40100C, VF40100C, VB40100C & VI40100CVishay General SemiconductorDocument Number: 89042For technical questions within your region, please contact one of the following:Dual High-Voltage Trench MOS Barrier Schottky RectifierUltra Low V F = 0.38 V at I F = 5 AFEATURES•Trench MOS Schottky technology •Low forward voltage drop, low power losses •High efficiency operation •Low thermal resistance•Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) •Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) •Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONSFor use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.MECHANICAL DATACase: TO-220AB, ITO-220AB, TO-263AB and TO-262AAEpoxy meets UL 94V-0 flammability ratingTerminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102E3 suffix for consumer grade, meets JESD 201 class 1A whisker testPolarity: As markedMounting Torque:10 in-lbs maximumPRIMARY CHARACTERISTICSI F(AV) 2 x 20 A V RRM 100 V I FSM 250 A V F at I F = 20 A 0.61 V T J max.150 °C12312KMAXIMUM RATINGS (T A = 25°C unless otherwise noted)PA AMETE SYMBOL V40100C VF40100C VB40100C VI40100C UNITMaximum repetitive peak reverse voltage V RRM 100V Maximum average forward rectified current (Fig. 1)per device per diodeI F(AV)4020APeak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode I FSM 250 A Isolation voltage (ITO-220AB only)From terminal to heatsink t = 1 minV AC 1500V Operating junction and storage temperature rangeT J , T STG- 40 to + 150°CV40100C, VF40100C, VB40100C & VI40100CVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 89042Notes:(1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 msRATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PA AMETE TEST CONDITIONS SYMBOL TYP.MAX.UNITBreakdown voltage(2)I R = 1.0 mAT A = 25 °CV BR100 (minimum)-VI R = 10 mA 105 (minimum)-Instantaneous forward voltage per diode (1)I F = 5 AI F = 10 A I F = 20 A T A = 25 °CV F0.470.540.67--0.73VI F = 5 A I F = 10 A I F = 20 A T A = 125 °C 0.380.450.61--0.67Reverse current at rated V R per diode (2)V R = 70 V T A = 25 °C T A = 125 °C I R910--µA mA V R = 100 VT A = 25 °C T A = 125 °C-21100045µA mATHERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PA AMETE SYMBOL V40100C VF40100C VB40100CVI40100CUNITTypical thermal resistance per diodeR θJC2.04.02.02.0°C/WORDERING INFORMATION (Example)PACKAGE PREFERRED P/N UNIT WEIGHT (g)PACKAGE CODEBASE QUANTITYDELIVERY MODETO-220AB V40100C-E3/4W 1.854W 50/tube T ube ITO-220AB VF40100C-E3/4W 1.754W 50/tube T ube TO-263AB VB40100C-E3/4W 1.394W 50/tube T ube TO-263AB VB40100C-E3/8W 1.398W 800/reel T ape and reelTO-262AAVI40100C-E3/4W1.464W50/tubeTubeFigure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per DiodeV40100C, VF40100C, VB40100C & VI40100CVishay General SemiconductorDocument Number: 89042For technical questions within your region, please contact one of the following:Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode Figure 5. Typical Junction Capacitance Per DiodeFigure 6. Typical Transient Thermal Impedance Per DiodeFigure7. Typical Transient Thermal Impedance Per DiodeV40100C, VF40100C, VB40100C & VI40100CVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 89042PACKAGE OUTLINE DIMENSIONS in inches (millimeters)Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网Document Number: 。

150-C快速调试步骤
注意事项：
1.在电动机运行当中，参数的修改操作是无效的。

必须在停机状态下才能够修改参数。

2.确认连接风扇电源.85A以上有110V和220V,两种.
3.如果150-C为B系列(见下图)接线可为内三角六线接法和三线接法，(A系列接线只有三
线接法),须注意如是三线接法,须将15号拨码开关向上拨到On，否则软起将始终停止状态，而不能启动。

调试基本步骤如下：
1,按如下方式接线:
三线图:
不带主接触器:
带主接触器:
带正反转:
六线图:
2,打开右上角的拨码开关盖：
所涉及的基本参数按拨码开关调整如下：
以上为基本参数的设置,具体设置按负载类型及参考说明书。

注:如电机的接线方式为内三角六线接法,电动机满载电流的设定为:铭牌电流的 1.73倍.(见下图)
注意事项:
1,不能用大电流的软起动,起动小电机.例如:160KW软起动(150-C317NBD),起动1KW电机.电机将会出现间隙起动的装况.
2,可根据RUN/FAULT指示灯闪烁判定故障类别:如闪一下,电机过载.闪两下,软起超温.见下表.
•故障指示
–1过载 - (可调)
–2过温
–3相序反向指示
–4缺相/载指示
–5三相不平衡指示
–6晶闸管短路
–7测试
对于电机的起动模式,可参考下表:。

C4050 Handheld Terminal UserManual○C 2013 by Shenzhen Chainway Information Technology Co., Limited. All rights reserved.No part of this publication may be reproduced or used in any form, or by any electrical or mechanical means, without permission written from Shenzhen Chainway. This includes electronic or mechanical means, such as photocopying, recording, or information storage and retrieval systems. The material in this manual is subject to change without notice.The software is provided strictly on an “as is” basis. All software, including firmware, furnished to the user is on a licens ed basis. Shenzhen Chainway grants to the user a non-transferable and non-exclusive license to use each software or firmware program delivered hereunder (licensed program). Except as noted below, such license may not be assigned, sublicensed, or otherwise transferred by the user without prior written consent of Shenzhen Chainway. No right to copy a licensed program in whole or in part is granted, except as permitted under copyright law. The user shall not modify, merge, or incorporate any form or portion of a licensed program with other program material, create a derivative work from a licensed program, or use a licensed program in a network without written permission from Shenzhen Chainway.Shenzhen Chainway reserves the right to make changes to any software or product to improve reliability, function, or design.Shenzhen Chainway does not assume any product liability arising out of, or in connection with, the application or use of any product, circuit, or application described herein.No license is granted, either expressly or by implication, estoppel, or otherwise under any Shenzhen Chainway intellectual property rights. An implied license only exists for equipment, circuits, and subsystems contained in Shenzhen Chainway products.Shenzhen Chainway Information Technology Co., LtdAddress: 9/F, Building 2, Phase 2, Gaoxinqi Industrial Park, Liuxian 1st Rd, District 67, Bao‟an, Shenzhen, Guangdong, ChinaTelephone：+0086-755-23223300 Fax: +0086-755-23223310Web Site: Email:*******************Web Site: CATALOGUEChapter 1 Getting Started (4)Chapter 2 About The Device (6)Chapter 3 Call Function (9)Chapter 4 Barcode Reader (11)Chapter 5 RFID Reader (13)Chapter 6 Fingerprint Reader (17)Chapter 7 The Other Functions (18)Chapter 8 Device Specifications (24)Chapter 1 Getting Started1.1Brief InstructionChainway C4050 is a series of Android powered smart terminals, with data capture, data processing, wireless communication. It is with high-reliability & high-expansibility. Auto & Accurate data collection is achieved in various business fields via a complete solution of premium options, the flexible solution among options and operators is suited-up. You will find out withC4050, much easier deployment, reduced complexity, decreased maintenance, are the benefits for enterprises.C4050 meets industrial level IP64 (IEC sealing), is sufficient to routine applications, eg, railway inspection, road parking toll, vehicle inspection, logistics express, power inspection, warehousing management, chain retail, etc. Whether the mobile operators are working indoor or outdoor, with Chainway C4050, your business is always &highly efficient on-line.Meeting industrial standards, designed to support a various of mobile solutions. With the build-in high performance Cortex-A7 1.3GHZ quad core processor technology, the operators need only one device to enjoy a convenient and easy job, C4050 will be the ideal choice for key-fact business in mobile solutions, for simplified task flow, enhanced work efficiency, for shortened time to customer response, more satisfied customer care service.Chainway C4050 comes with world wide band WCDMA technology. Multi channels data and voice communication guarantees the real-time communication and data efficiency, C4050 brings you the best ROI.1.2Precaution Before Using Battery●Do not leave batteries unused for extended periods of time, either in the product or in storage.When the battery has been unused for 6 months, check the charge status and charge ordispose of the battery as appropriate.●The typical estimated life of a Lithium-Ion battery is about two to three years or 300 to 500charge cycles, whichever occurs first. One charge cycle is a period of use from fully charged, to fully discharged, and fully recharged again. Use a two to three year life expectancy for batteries that do not run through complete charge cycles.●Rechargeable Lithium-Ion batteries have a limited life and will gradually lose their capacityto hold a charge. This loss of capacity (aging) is irreversible. As the battery loses capacity, the length of time it will power the product (run time) decreases.●Lithium-Ion batteries continue to slowly discharge (self-discharge) when not in use or whilein storage. Routinely check the battery‟s charge status. The user manual typically includes information on how to check battery status, as well as battery charging instructions.●Observe and note the run time that a new fully-charged battery provides for powering yourproduct. Use the new battery run time as a basis to compare run times for older batteries. The run time of your battery will vary depending on the pro duct‟s configuration and theapplications that you run.●Routinely check the battery‟s charge status.●Carefully monitor batteries that are approaching the end of their estimated life.Consider replacing the battery with a new one if you note either of the following conditions: ●The battery run time drops below about 80% of the original run time.●The battery charge time increases significantly.●If a battery is stored or otherwise unused for an extended period, be sure to follow the storageinstructions in this document. If you do not follow the instructions, and the battery has no charge remaining when you check it, consider it to be damaged. Do not attempt to recharge it or to use it. Replace it with a new battery.●Always follow the charging instructions provi ded with your product. Refer to your product‟suser manual and/or online help for detailed information about charging its battery.●Charge or discharge the battery to approximately 50% of capacity before storage.●Charge the battery to approximately 50% of capacity at least once every six months.●Remove the battery and store it separately from the product.●Store the battery at temperatures between 5 °C and 20 °C (41 °F and 68 °F).Chapter 2 About The Device2.1Structure<Front><Back>2.2SD Card InstallationDetailed installation steps are as follows:1.Open the SIM slot as the direction of …Open/Lock‟ labeled;2.Open the SD slot as the direction of …Open/Lock‟ labeled;3.Install the SD card properly;4.Lock the SD slot and SIM slot properly;2.3SIM Card Installation1. Open the SIM slot as the direction of …Open/Lock‟ labeled;2. Install the SIM card correctly;3. Lock the SIM slot properly;2.4 Battery Installation1. Push the battery down into the bottom of the battery;2. Push the battery to the direction of the array;3. Turn the battery lock;2.5 Battery Charging2.5.1 Direct ChargingUse the adapter to charge the battery via the USB connector of the snap-on;.2.5.2 Cradle ChargingConnect the adapter with the power cable to charge the device.2.6 Device Turning on/offPress the …Power‟ button on the side shortly due to turn on/off.23Chapter 3 Call Function3.1 Phone1.Click this icon :2.Click the number button to input the numbers;3.Click the button to confirm and dial;4.Click the to end the calling;3.2 Contacts1.Click …Contacts‟ to open the contacts list;2.Click …‟ to add the new contact;3.Click …‟ to import/export or delete the contact list; Contacts LogsVoice CallingEmulated Numeric Keypad3.3 Messaging1. Click …‟ to open the message list;2.Click …‟ to input the content;3.Click …‟ to send the message;4.Click …‟ to add photos, videos;FavoritesContact List GroupChapter 4 Barcode Reader4.1 1D Barcode1)Open the 1D Barcode Demo in Appcenter;2)P ress the …Scan‟ button to start scanning, then the auto interval parameters canalso be set;4.2 2D Barcode1)Open the 2D Barcode Demo in Appcenter;2)Press the …Scan‟ button to start scanning, then the auto interval parameters canalso be set;4.3 2D(S) Barcode1)Open the 2D(S) Barcode Demo in Appcenter;2)Press the …Scan‟ button to start scanning, then the auto interval parameters canalso be set;3)Also, the barcode types enabling/disabling can also be set;Note: Please scan the barcode correctly, otherwise the scanning might be failed;Chapter 5 RFID Reader5.1Low Frequency1.Open the RFID_LF Demo within Appcenter and then press the …Scan‟ button tostart reading;2.Tag types including ID Card/Animal Tag/Hitag/HDX Tag/EM4450 can be alsoselected, and Hitag-S and EM4305 reading/writing are already supported by thedevice;Note: please ensure that the LF module is embedded in the device, also please select the tag type correctly, otherwise the operation might not work. Meanwhile, please pay attention to the HDX and FDX-B since they are using different hardware due to the different working principles.5.2High Frequency5.2.114443A1.Open the 14443A demo within Appcenter, and press the …Scan‟ button to startreading;2.Mifare and Ultra Light reading/writing are also supported;5.2.2156931.Open the RFID_15693 demo within Appcenter, and press the …Scan‟ button tostart scanning;2.15693 writing are also supported;5.3Ultra High Frequency1.Open the UHF demo within Appcenter, and press the …S tart‟ button to startscanning;2.Multiple tags reading and single tag reading/writing are also supported;Chapter 6 Fingerprint Reader1.Open the Fingerprint Demo in Appcenter;2.Put the finger to the fingerprint module and set the ID/name of the templateunder …ACQUISITION‟;3.Put the finger to the fingerprint module properly and identify byID/Name/Score under …IDENTIFICATION‟;4.The local templates can also be checked under …Data‟;Note: Please be aware that ISO standards are only supported by the ISO fingerprint hardware module.Chapter 7 The Other Functions7.1PING1.Open the Ping in Appcenter;2.Set the Ping parameters and select the internal/external addresses;7.2Bluetooth1.Open the Bluetooth demo in Appcenter and turn on the Bluetooth;2.Input the content or select the file, then scan the nearby Bluetooth printer andpair them;3.Select the printer and click …Print‟ to print the content;7.3GPS1.Open the GPS demo in Appcenter and turn on GPS module;2.Set the GPS parameters and get the GPS data information;7.4Volume Settings1.Open the Volume Setting demo in Appcenter;2.Set the volumes based on the requirements;7.5Sensor1.Open the Sensor demo in Appcenter;2.Test the sensor based on the requirements;7.6Keyboard1.Open the Keyboard demo in Handset Appcenter;2.Set and test the key values of the device;7.7Network1.Open the Network demo in Appcenter;2.Test the WIFI/Mobile signal based on the requirements;7.8KeyboardEmulatorKeyboard Emulator can be used directly for multiple using environments and the output formats can including prefix/suffix/enter/tap can also be defined, please define the options properly based on the features of the device.1)Open the KeyboardEmulator which is preinstalled in the device;2)Click the options correctly based on the features of the device hardware, please alsopress the physical button to define the scan button, then please define the output formats based on the requirements, finally click …Open‟ to save and enable it ;Chapter 8 Device Specifications。

BYV40E series Rectifier diodes ultrafast, ruggedNXP Semiconductors Product specificationRectifier diodes BYV40E seriesultrafast, ruggedESD LIMITING VALUESYMBOL PARAMETER CONDITIONSMIN.MAX.UNIT V CElectrostatic discharge Human body model;-8kVcapacitor voltageC = 250 pF; R = 1.5 k ΩTHERMAL RESISTANCESSYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNIT R th j-sp Thermal resistance one or both diodes conducting --15K/W junction to solder point R th j-aThermal resistance pcb mounted; minimum footprint -156-K/W junction to ambientpcb mounted; pad area as in fig:11-70-K/WELECTRICAL CHARACTERISTICScharacteristics are per diode at T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNIT V F Forward voltage I F = 0.5 A; T j = 150˚C -0.500.7V I F = 1.5 A-0.82 1.0V I R Reverse currentV R = V RWM ; T j = 100 ˚C -100300µA V R = V RWM-510µA Q s Reverse recovery charge I F = 2 A; V R ≥ 30 V; -dI F /dt = 20 A/µs --11nC t rr1Reverse recovery time I F = 1 A; V R ≥ 30 V;--25ns -dI F /dt = 100 A/µst rr2Reverse recovery time I F = 0.5 A to I R = 1 A; I rec = 0.25 A -1020ns V frForward recovery voltageI F = 2 A; dI F /dt = 20 A/µs-3-VLegal informationDATA SHEET STATUSNotes1.Please consult the most recently issued document before initiating or completing a design.2.The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at URL . DOCUMENT STATUS (1)PRODUCT STATUS (2)DEFINITIONObjective data sheet Development This document contains data from the objective specification for product development.Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet ProductionThis document contains the product specification.DEFINITIONSProduct specification ⎯ The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXPSemiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.DISCLAIMERSLimited warranty and liability ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give anyrepresentations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or reworkcharges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’aggregate and cumulative liability towards customer for the products described herein shall be limited inaccordance with the Terms and conditions of commercial sale of NXP Semiconductors.Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to informationpublished in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severeproperty or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s own risk.Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXPSemiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXPSemiconductors product is suitable and fit for thecustomer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.Legal informationNXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third partycustomer(s). NXP does not accept any liability in this respect.Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.Terms and conditions of commercial sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Export might require a prior authorization from national authorities.Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.Non-automotive qualified products ⎯ Unless this data sheet expressly states that this specific NXPSemiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.In the event that customer uses the product for design-in and use in automotive applications to automotivespecifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXPSemiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.Contact informationFor additional information please visit: For sales offices addresses send e-mail to: salesaddresses@Customer notificationThis data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the content, except for the legal definitions and disclaimers. © NXP B.V. 2011All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Printed in The Netherlands分销商库存信息: NXPBYV40E-150,115。