2T贴片三极管
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT4403 TRANSISTOR (PNP)
FEATURES Switching transistor MARKING ：2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter SymbolTest conditions MinMax UnitCollector-base breakdown voltage V(BR)CBOIC=-100μA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEOIC= -1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBOIE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=
0 -0.1 μA Collector cut-off current ICEO VCE=-35 V, IB=
0 -0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=
0 -0.1 μA
DC current gain hFE VCE=-2V, IC= -150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 150mA, IB=-15mA -0.95 V
Transition frequency f T VCE= -10V, IC= -20mA f = 100MHz 200 MHz
Detay time td 15 ns Rise time tr VCC=-30V,VEB=-2V, IC=-150mA.IB1=-15mA 20 ns
Storage time ts 225 ns
Fall time tf VCC=-30V, IC=-150mA. IB1= IB2=-15mA 30 ns
SOT-23 1. BASE 2. EMITTER 3. COLLECTOR
B,Jun,2012www.nscn.com.cn【南京南山半导体有限公司 — 长电贴片三极管选型资料】
-1-10-100101001000
-1-10-100-10-100
-0.1-1-10
-1-10-1002550751001251500100200300400-0.0-0.4-0.8-1.2-0.1-1-10-100-1-10-100-0.0-0.4-0.8-1.2-0-2-4-6-0-50-100-150-200-250
fT ——IChFE ——
COMMON EMITTERVCE=-2V
Ta=100℃
Ta=25℃
DC CURRENT GAIN hFE
COLLECTOR CURRENT IC (mA)IC
-30-300
-30-3COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
COLLECTOR CURRENT IC (mA)β=10
Ta=25℃Ta=100℃ICVCEsat —— -700
-600
50
110
-30CobCib
REVERSE VOLTAGE V (V)f=1MHzIE=0/IC=0Ta=25℃VCB/ VEBCob/ Cib ——
CAPACITANCE C (pF)
-100-600
-3-30VCE=-10VTa=25℃
TRANSITION FREQUENCY fT (MHz)
COLLECTOR CURRENT IC (mA) MMBT4403Typical Characterisitics
COLLECTOR POWER DISSIPATION
PC (mW)
AMBIENT TEMPERATURE Ta ()℃PC —— Ta
VBEIC —— -600
Ta=25℃Ta=100℃COMMON EMITTERVCE=-2V
COLLECTOR CURRENT IC (mA)
BASE-EMMITER VOLTAGE VBE (V) -600
-30-3β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR CURRENT IC (mA)Ta=25℃
Ta=100℃
-600
ICVBEsat ——Static Characteristic
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)-1mA-0.9mA-0.8mA-0.7mA-0.6mA-0.5mA-0.4mA-0.3mA-0.2mAIB=-0.1mACOMMONEMITTERTa=25℃
B,Jun,2012
Min.Max.Min.Max.A0.9001.1500.035
0.045
A1
0.0000.1000.0000.004A20.9001.0500.0350.041b0.3000.5000.0120.020c0.0800.1500.0030.006D2.8003.0000.1100.118E1.2001.4000.0470.055E12.2502.5500.0890.100ee11.8002.0000.0710.079LL10.3000.5000.0120.020θ0°8°0°8°0.550 REF.0.022 REF.SymbolDimensions In InchesDimensions In Millimeters
0.950 TYP.0.037 TYP.www.nscn.com.cn【南京南山半导体有限公司 — 长电三极管选型资料】
The bottom gasket
The top gasket 3000×1 PCS 3000×15 PCS Label on the Reel
Label on the Inner Box
Label on the Outer Box QA Label Seal the box with the tape Seal the box with the tape Stamp “EMPTY” on the empty box
Inner Box: 210 mm× 208 mm×203 mmOuter Box: 440 mm× 440 mm× 230 mm
