PBF493中文资料
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1Motorola Small–Signal Transistors, FETs and Diodes Device DataHigh Voltage Transistors
PNP Silicon
MAXIMUM RATINGS
RatingSymbolValueUnit
Collector–Emitter VoltageVCEO–300Vdc
Collector–Base VoltageVCBO–300Vdc
Emitter–Base VoltageVEBO–5.0Vdc
Collector Current — ContinuousIC–500mAdc
Total Device Dissipation @ TA = 25°CDerate above 25°CPD6255.0mWmW/°C
Total Device Dissipation @ TC = 25°CDerate above 25°CPD1.512WattsmW/°C
Operating and Storage JunctionTemperature RangeTJ, Tstg–55 to +150°C
THERMAL CHARACTERISTICS
CharacteristicSymbolMaxUnit
Thermal Resistance, Junction to AmbientRqJA200°C/W
Thermal Resistance, Junction to CaseRqJC83.3°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
CharacteristicSymbolMinMaxUnit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)(IC = –1.0 mAdc, IB = 0)V(BR)CEO–300—Vdc
Collector–Base Breakdown Voltage(IC = –10 mAdc, IE = 0)V(BR)CBO–300—Vdc
Emitter–Base Breakdown Voltage(IE = –100 mAdc, IC = 0)V(BR)EBO–5.0—Vdc
Collector Cutoff Current(VCB = –200 Vdc, IE = 0)ICBO—–0.25µAdc
Emitter Cutoff Current(VEB = –3.0 Vdc)IEBO—–20nAdc
Collector Cutoff Current(VCE = –10 Vdc)ICEO—–250nAdc
1.Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.Order this documentby PBF493/DMOTOROLA
SEMICONDUCTOR TECHNICAL DATA
PBF493
PBF493S
CASE 29–04, STYLE 1TO–92 (TO–226AA)123
© Motorola, Inc. 1996COLLECTOR3
2BASE
1EMITTER元器件交易网www.cecb2b.comPBF493 PBF493S
2Motorola Small–Signal Transistors, FETs and Diodes Device DataELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
CharacteristicSymbolMinMaxUnit
ON CHARACTERISTICS
DC Current Gain(IC = –0.1 mAdc, VCE = –1.0 Vdc)PBF493S(IC = –1.0 mAdc, VCE = –10 Vdc)All Types(IC = –30 mAdc, VCE = –10 Vdc)All TypeshFE404025————
Collector–Emitter Saturation Voltage(IC = –20 mAdc, IB = –2.0 mAdc)VCE(sat)—–0.5Vdc
Base–Emitter Saturation Voltage(IC = –20 mAdc, IB = –2.0 mAdc)VBE(sat)—–0.9Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz)fT50—MHz
Output Capacitance(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)Cobo—6.0pF元器件交易网www.cecb2b.comPBF493 PBF493S
3Motorola Small–Signal Transistors, FETs and Diodes Device DataFigure 1. DC Current GainIC, COLLECTOR CURRENT (mA)150
–1.015hFE, DC CURRENT GAINTJ = +125°C
+25°C
–55°CVCE = –10 Vdc
20305070100
–2.0–3.0–5.0–7.0–10–20–30–50–80–100
C, CAPACITANCE (pF)
Figure 2. CapacitancesVR, REVERSE VOLTAGE (VOLTS)–0.1100
50
20
1.0Ccb10
2.05.0Cib
Figure 3. Current–Gain — Bandwidth ProductIC, COLLECTOR CURRENT (mA)–50–20–10–5.0–2.0100
60
40
30
20
0TJ = 25°CVCE = –20 Vdc
f, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
T–1.0
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” VoltagesV, VOLTAGE (VOLTS)–1.0
0VCE(sat) @ IC/IB = 10 mAVBE @ VCE = –10 V–0.8
–0.6
–0.4
–0.2
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)IC, COLLECTOR CURRENT (mA)
PBF493S
Figure 5. Active Region — Safe Operating AreaBONDING WIRE LIMITATIONSECOND BREAKDOWNLIMITATIONPBF493100 µs1.0 ms
TJ = 150°C1.5 WATT THERMALLIMITATION @ TC = 25°C625 mW THERMALLIMITATION @ TA = 25°C–500
–5.0–10–20–50–100–200–0.2–0.5–1.0–2.0–5.0–10–20–50–100–200–500–100080
–100
–50–20–10–5.0–2.0–1.0–100–3.0–5.0–10–20–30–50–100–200–3001.0 s元器件交易网www.cecb2b.comPBF493 PBF493S
4Motorola Small–Signal Transistors, FETs and Diodes Device DataPACKAGE DIMENSIONS
NOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.CONTOUR OF PACKAGE BEYOND DIMENSION RIS UNCONTROLLED.4.DIMENSION F APPLIES BETWEEN P AND L.DIMENSION D AND J APPLY BETWEEN L AND KMINIMUM. LEAD DIMENSION IS UNCONTROLLEDIN P AND BEYOND DIMENSION K MINIMUM.RA
P
JLFB
K
GHSECTION X–XCVD
N
NXXSEATINGPLANEDIMMINMAXMINMAXMILLIMETERSINCHES
A0.1750.2054.455.20B0.1700.2104.325.33C0.1250.1653.184.19D0.0160.0220.410.55F0.0160.0190.410.48G0.0450.0551.151.39H0.0950.1052.422.66J0.0150.0200.390.50K0.500–––12.70–––L0.250–––6.35–––N0.0800.1052.042.66P–––0.100–––2.54R0.115–––2.93–––V0.135–––3.43–––1
STYLE 1:PIN 1.EMITTER2.BASE3.COLLECTORCASE 029–04(TO–226AA)ISSUE AD
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