CF5010DN1中文资料

SM5010 seriesCrystal Oscillator Module ICs OVERVIEWThe SM5010 series are crystal oscillator module ICs. They incorporate oscillator and output buffer circuits, employing built-in oscillator capacitors and feedback resistors with excellent frequency response, eliminating the need for external components to form a stable crystal oscillator. There are 7 oscillator configurations available for design and application optimization.FEATURESI7 types of oscillation circuit structureFor fundamental oscillator•5010A××:Simple structure with low frequency vari-ation•5010B××:Low crystal current type with R D built-inoscillation circuit•5010CL×:Oscillation stop function built-in •5010DN×:External capacitors, C G and C D required •5010EA×:Low current consumption typeFor 3rd overtone oscillator•5010F××:Suitable for round blank•5010H××:External resistor, R f required I 2.7 to 5.5V operating supply voltageI Capacitors C G, C D built-inI Inverter amplifier feedback resistor built-inI Output duty level•TTL level: AK×, BK×, HKוCMOS level:AN×, AH×, BN×, BH×, CL×, DN×,EA×, FN×, FH×, HN×I Oscillator frequency output (f O, f O/2, f O/4, f O/8, f O/16determined by internal connection)I Standby functionI Pull-up resistor built-inI8-pin SOP (SM5010×××S)I Chip form (CF5010×××)SERIES CONFIGURATION For Fundamental OscillatorVersion1Operatingsupplyvoltage range[V]Built-incapacitance RD[Ω]Outputcurrent(V DD = 5V)[mA]Output dutylevelOutputfrequencyINHN inputlevel(V DD = 5V)Standby modeC G[pF]C D[pF]Oscillatorstop function Output stateCF5010AN12.7 to 5.52929–16CMOS f OTTL No High impedanceCF5010AN2CMOS/TTL f O/2CF5010AN3f O/4CF5010AN4f O/8CF5010AK1 4.5 to 5.52929–16TTL f O TTL No High impedanceCF5010AH12.7 to 5.52929–4CMOS f OTTL No High impedanceCF5010AH2f O/2 CF5010AH3f O/4 CF5010AH4f O/8CF5010BN12.7 to 5.5222282016CMOS f OTTL No High impedanceCF5010BN2CMOS/TTL f O/2CF5010BN3f O/4CF5010BN4f O/8CF5010BN5f O/16CF5010BK1 4.5 to 5.5222282016TTL f O TTL No High impedanceCF5010BH12.7 to 5.522228204CMOS f OTTL No High impedanceCF5010BH2f O/2 CF5010BH3f O/4 CF5010BH4f O/8CF5010CL12.7 to 5.51818–16CMOS f OCMOS Yes High impedanceCF5010CL2f O/2CF5010CL3f O/4CF5010CL4f O/8CF5010CL5f O/16CF5010DN1 2.7 to 5.5––82016CMOS f O TTL No High impedanceCF5010EA12.7 to 5.510158204CMOS f OTTL Yes LOWCF5010EA2f O/21. Package devices have designation SM5010×××S.元器件交易网SM5010 seriesSERIES CONFIGURATIONFor 3rd Overtone OscillatorORDERING INFORMATIONPACKAGE DIMENSIONS(Unit: mm) • 8-pin SOPVersion Operating supply voltage range [V]gm ratioBuilt-in capacitanceR f [k Ω ]Output current (V DD = 5V) [mA]Output duty levelC G [pF]CD [pF] CF5010FNA 2.7 to 5.51.001315 4.216CMOSCF5010FNC 1117 3.1CF5010FND 1317 2.2CF5010FNE 4.5 to 5.5815 2.2CF5010FHA 4.5 to 5.51.001315 4.24CMOSCF5010FHC 1117 3.1CF5010FHD 1317 2.2CF5010FHE 815 2.2CF5010HN1 4.5 to 5.5 1.17131720016CMOS CF5010HK14.5 to5.51.17131720016TTLDevice Package SM5010 ××× S 8-pin SOP CF5010 ×××–1Chip form元器件交易网SM5010 seriesPAD LAYOUT(Unit: µ m)PINOUT(Top view)PIN DESCRIPTION and PAD DIMENSIONSNumberNameI/ODescriptionPad dimensions [µm]X Y 1INHN I Output state control input. Standby mode when LOW, pull-up resistor built in. In the case of the 5010CL × , the oscillator stops and Power-saving pull-up resistor is built-in to reduce current consumption at standby mode.195174.42XT I Amplifier input.Crystal oscillator connection pins.Crystal oscillator connected between XT and XTN385174.43XTN O Amplifier output.575174.44VSS –Ground765174.45Q O Output. Output frequency (f O , f O /2, f O /4, f O /8, f O/16) determined by internal connection 757.61017.66NC –No connection ––7NC –No connection ––8VDD–Supply voltage165.41014.6元器件交易网元器件交易网SM5010 series BLOCK DIAGRAMFor Fundamental OscillatorI5010A××, B××, CL×, DN×, EA× seriesFor 3rd Overtone OscillatorI5010F××, H×× seriesSM5010 seriesFUNCTIONAL DESCRIPTIONStandby Function5010AH × , AK × , AN × , BH × , BK × , BN × , DN×, FN ×, FH ×, HN ×, HK × seriesWhen INHN goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop.5010CL × seriesWhen INHN goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.5010EA × seriesWhen INHN goes LOW, the oscillator stops and the oscillator output on Q becomes LOW.Power-saving Pull-up Resistor (CL series only)The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW (standby state), the pull-up resistance becomes large to reduce the current consumption during standby.Version INHN QOscillator AH ×, AK ×, AN ×, BH ×, BK ×, BN ×, DN ×, FH ×, FH ×, HN ×, HK × seriesHIGH (or open)Any f O , f O /2, f O /4, f O /8 or f O /16 output frequencyNormal operation LOW High impedanceNormal operation CL × seriesHIGH (or open)Any f O , f O /2, f O /4, f O /8 or f O /16 output frequencyNormal operationLOW High impedanceStopped EA × seriesHIGH (or open)Either f O or f O /2 output frequencyNormal operationLOWLOWStopped元器件交易网SPECIFICATIONSAbsolute Maximum RatingsV SS = 0VRecommended Operating Conditions3V operation V SS = 0VParameterSymbol ConditionRating Unit Supply voltage range V DD −0.5 to +7.0V Input voltage range V IN −0.5 to V DD + 0.5V Output voltage range V OUT −0.5 to V DD + 0.5V Operating temperature range T opr −40 to +85°C Storage temperature rangeT stgChip form −65 to +150°C8-pin SOP−55 to +125Output currentI OUT AH ×, BH ×, FH ×, EA ×10mA AN ×, AK ×, BN ×, BK ×, CL ×, DN ×, FN ×, HN ×, HK ×25Power dissipation P D8-pin SOP500mWParameter Symbol Version ConditionRating Unit Operating supply voltage V DD All version 2.7 to 3.6V Input voltageV INAll version V SS to V DDVOperating temperatureT OPR5010AN ×−10 to +70°C5010AH ×5010BN ×5010BH ×5010CL ×−20 to +805010DN1−10 to +705010EA ×5010FN ×Operating frequencyf5010AN ×C L ≤ 15pF2 to 30MHz5010AH × 2 to 165010BN ×2 to 305010BH × 2 to 165010CL × 2 to 305010DN15010EA ×5010FN ×22 to 405V operationV SS = 0VParameter Symbol Version Condition Rating Unit Operating supply voltage V DD All version 4.5 to 5.5V Input voltage V IN All version V SS to V DD VOperating temperature T OPR 5010AN×−40 to +85°C 5010AK×5010AH×5010BN×5010BK×5010BH×5010CL×5010DN15010EA×C L≤ 15pF, f = 2 to 30MHzC L≤ 15pF, f = 2 to 40MHz−10 to +705010FN×C L≤ 50pF, 30MHz ≤ f ≤ 50MHz−20 to +80C L≤ 15pF, 50MHz ≤ f ≤ 70MHz−15 to +755010FH×C L≤ 15pF, 30MHz ≤ f ≤ 50MHz−20 to +80C L≤ 15pF, 50MHz ≤ f ≤ 60MHz−15 to +755010HN1−40 to +855010HK1Operating frequency f 5010AN×C L≤ 50pF2 to 30MHz 5010AK×C L≤ 15pF5010AH×5010BN×C L≤ 50pF5010BK×C L≤ 15pF5010BH×5010CL×C L≤ 50pF5010DN15010EA×C L≤ 15pF, Ta =− 40 to + 85°C 2 to 405010FN×C L≤ 50pF, Ta =− 20 to + 80°C30 to 50C L≤ 15pF, Ta =− 15 to + 75°C50 to 705010FH×C L≤ 15pF, Ta =− 20 to + 80°C30 to 50C L≤ 15pF, Ta =− 15 to + 75°C50 to 605010HN1C L≤ 50pF22 to 505010HK1C L≤ 15pFElectrical Characteristics5010AN ×, BN ×, DN × series3V operation: V DD = 2.7 to 3.6V , V SS = 0V , Ta = −10 to +70°C unless otherwise noted.5010AN ×, AK ×, BN ×, BK ×, DN × series5V operation: V DD = 4.5 to 5.5V , V SS = 0V , Ta = −40 to +85°C unless otherwise noted.Parameter Symbol ConditionRatingUnit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, V DD = 2.7V, I OH = 8mA 2.1 2.4–V LOW-level output voltage V OL Q: Measurement cct 2, V DD = 2.7V, I OL = 8mA –0.30.4V HIGH-level input voltage V IH INHN 2.0––V LOW-level input voltage V IL INHN––0.5V Output leakage currentI ZQ: Measurement cct 2, INHN = LOW, V DD = 3.6VV OH = V DD ––10µAV OL = V SS ––10Current consumptionI DDMeasurement cct 3, load cct 1,INHN = open, C L = 15pF , f = 30MHz5010×N1–510mA 5010×N2– 3.575010×N3– 2.555010×N4–245010×N5–24INHN pull-up resistance R UP2Measurement cct 440100250k ΩFeedback resistance R f Measurement cct 580200500k ΩOscillator amplifier output resistanceR D Design value5010B ××690820940ΩBuilt-in capacitanceC GDesign value. A monitor pattern on a wafer is tested.5010A ××262932pF 5010B ××202224C D5010A ××2629325010B ××202224Parameter Symbol ConditionRatingUnit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, V DD = 4.5V, I OH = 16mA 3.9 4.2–V LOW-level output voltage V OL Q: Measurement cct 2, V DD = 4.5V, I OL = 16mA –0.30.4V HIGH-level input voltage V IH INHN 2.0––V LOW-level input voltage V IL INHN––0.8V Output leakage currentI ZQ: Measurement cct 2, INHN = LOW, V DD = 5.5VV OH = V DD ––10µAV OL = V SS ––10Current consumptionI DDMeasurement cct 3, load cct 1, INHN = open, C L = 50pF , f = 30MHz5010×N1–1530mA 5010×N2–9185010×N3–6125010×N4–5105010×N5–510Measurement cct 3, load cct 2,INHN = open, C L = 15pF , f = 30MHz5010×K1–1020INHN pull-up resistance R UP2Measurement cct 440100250k ΩFeedback resistance R f Measurement cct 580200500k ΩOscillator amplifier output resistanceR D Design value5010B ××690820940ΩBuilt-in capacitanceC GDesign value. A monitor pattern on a wafer is tested.5010A ××262932pF 5010B ××202224C D5010A ××2629325010B ××2022245010AH ×, BH × series3V operation: V DD = 2.7 to 3.6V , V SS = 0V , Ta = −10 to +70°C unless otherwise noted.5V operation: V DD = 4.5 to 5.5V , V SS = 0V , Ta = −40 to +85°C unless otherwise noted.Parameter Symbol ConditionRatingUnit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, V DD = 2.7V, I OH = 2mA 2.1 2.4–V LOW-level output voltage V OL Q: Measurement cct 2, V DD = 2.7V, I OL = 2mA –0.30.5V HIGH-level input voltage V IH INHN 2.0––V LOW-level input voltage V IL INHN––0.5V Output leakage currentI ZQ: Measurement cct 2, INHN = LOW, V DD = 3.6VV OH = V DD ––10µAV OL = V SS ––10Current consumptionI DDMeasurement cct 3, load cct 1,INHN = open, C L = 15pF , f = 16MHz5010×H1–36mA 5010×H2–245010×H3– 1.535010×H4– 1.5 2.5INHN pull-up resistance R UP2Measurement cct 440100250k ΩFeedback resistance R f Measurement cct 580200500k ΩOscillator amplifier output resistanceR D Design value5010B ××690820940ΩBuilt-in capacitanceC GDesign value. A monitor pattern on a wafer is tested.5010A ××262932pF 5010B ××202224C D5010A ××2629325010B ××202224Parameter Symbol ConditionRatingUnit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, V DD = 4.5V, I OH = 4mA 3.9 4.2–V LOW-level output voltage V OL Q: Measurement cct 2, V DD = 4.5V, I OL = 4mA –0.30.5V HIGH-level input voltage V IH INHN 2.0––V LOW-level input voltage V IL INHN––0.8V Output leakage currentI ZQ: Measurement cct 2, INHN = LOW, V DD = 5.5VV OH = V DD ––10µAV OL = V SS ––10Current consumptionI DDMeasurement cct 3, load cct 1,INHN = open, C L = 15pF , f = 30MHz5010×H1–918mA 5010×H2–6125010×H3–5105010×H4–48INHN pull-up resistance R UP2Measurement cct 440100250k ΩFeedback resistance R f Measurement cct 580200500k ΩOscillator amplifier output resistanceR D Design value5010B ××690820940ΩBuilt-in capacitanceC GDesign value. A monitor pattern on a wafer is tested.5010A ××262932pF 5010B ××202224C D5010A ××2629325010B ××2022245010CL × series3V operation: V DD = 2.7 to 3.6V , V SS = 0V , Ta = −20 to +80°C unless otherwise noted.5V operation: V DD = 4.5 to 5.5V , V SS = 0V , Ta = −40 to +85°C unless otherwise noted.Parameter Symbol ConditionRatingUnit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, V DD = 2.7V, I OH = 8mA 2.2 2.4–V LOW-level output voltage V OL Q: Measurement cct 2, V DD = 2.7V, I OL = 8mA –0.30.4V HIGH-level input voltage V IH INHN 0.7V DD ––V LOW-level input voltage V IL INHN––0.3V DD V Output leakage currentI ZQ: Measurement cct 2, INHN = LOW, V DD = 3.6VV OH = V DD ––10µAV OL = V SS ––10Current consumptionI DDMeasurement cct 3, load cct 1,INHN = open, C L = 15pF , f = 30MHz5010CL1–510mA 5010CL2– 3.575010CL3– 2.555010CL4–245010CL5–24Standby current I ST Measurement cct 6, INHN = LOW ––5µA INHN pull-up resistance R UP1Measurement cct 42415M ΩR UP240100250k ΩFeedback resistance R f Measurement cct 580200500k ΩBuilt-in capacitanceC G Design value. A monitor pattern on a wafer is tested.161820pF C D161820Parameter Symbol ConditionRatingUnit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, V DD = 4.5V, I OH = 16mA 4.0 4.2–V LOW-level output voltage V OL Q: Measurement cct 2, V DD = 4.5V, I OL = 16mA –0.30.4V HIGH-level input voltage V IH INHN 0.7V DD ––V LOW-level input voltage V IL INHN––0.3V DD V Output leakage currentI ZQ: Measurement cct 2, INHN = LOW, V DD = 5.5VV OH = V DD ––10µAV OL = V SS ––10Current consumptionI DDMeasurement cct 3, load cct 1,INHN = open, C L = 50pF , f = 30MHz5010CL1–1530mA 5010CL2–9185010CL3–6125010CL4–5105010CL5–510Standby current I ST Measurement cct 6, INHN = LOW ––10µA INHN pull-up resistance R UP1Measurement cct 4128M ΩR UP240100250k ΩFeedback resistance R f Measurement cct 580200500k ΩBuilt-in capacitanceC G Design value. A monitor pattern on a wafer is tested.161820pF C D1618205010EA × series3V operation: V DD = 2.7 to 3.6V , V SS = 0V , Ta = −10 to +70°C unless otherwise noted.5V operation: V DD = 4.5 to 5.5V , V SS = 0V , Ta = −40 to +85°C unless otherwise noted.Parameter Symbol ConditionRatingUnit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, V DD = 2.7V, I OH = 2mA 2.1 2.4–V LOW-level output voltage V OL Q: Measurement cct 2, V DD = 2.7V, I OL = 2mA –0.30.5V HIGH-level input voltage V IH INHN 2.0––V LOW-level input voltage V IL INHN––0.5V Current consumption I DD Measurement cct 3, load cct 1,INHN = open, C L = 15pF , f = 30MHz 5010EA1–48mA 5010EA2– 2.55INHN pull-up resistance R UP2Measurement cct 440100250k ΩFeedback resistance R f Measurement cct 580200500k ΩOscillator amplifier output resistance R D Design value690820940ΩBuilt-in capacitanceC G Design value. A monitor pattern on a wafer is tested.91011pFC D131517Parameter Symbol ConditionRatingUnit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, V DD = 4.5V, I OH = 3.2mA 3.9 4.2–V LOW-level output voltage V OL Q: Measurement cct 2, V DD = 4.5V, I OL = 3.2mA –0.30.4V HIGH-level input voltage V IH INHN 2.0––V LOW-level input voltageV IL INHN––0.8VCurrent consumptionI DD1Measurement cct 3, load cct 1,INHN = open, C L = 15pF , f = 30MHz5010EA1–612mA 5010EA2–510I DD2Measurement cct 3, load cct 1,INHN = open, C L = 15pF , f = 40MHz 5010EA1–9185010EA2–612INHN pull-up resistance R UP2Measurement cct 440100250k ΩFeedback resistance R f Measurement cct 580200500k ΩOscillator amplifier output resistance R D Design value690820940ΩBuilt-in capacitanceC G Design value. A monitor pattern on a wafer is tested.91011pFC D1315175010FN× series3V operation: V DD = 2.7 to 3.6V, V SS = 0V, Ta = −10 to +70°C unless otherwise noted.Parameter Symbol ConditionRatingUnit min typ maxHIGH-level output voltage V OH Q: Measurement cct 1, V DD = 2.7V, I OH = 8mA 2.2 2.4–V LOW-level output voltage V OL Q: Measurement cct 2, V DD = 2.7V, I OL = 8mA–0.30.4V HIGH-level input voltage V IH INHN 2.0––V LOW-level input voltage V IL INHN––0.5VOutput leakage current I Z Q: Measurement cct 2, INHN = LOW,V DD = 3.6VV OH = V DD––10µAV OL = V SS––10Current consumption I DD Measurement cct 3, load cct 1,INHN = open, C L = 15pF5010FNA, FNCf = 30MHz–816mA5010FNDf = 40MHz–1020INHN pull-up resistance R UP Measurement cct 440100250kΩFeedback resistance R f Measurement cct 55010FNA 3.57 4.2 4.83kΩ5010FNC 2.63 3.1 3.575010FND 1.87 2.2 2.53Built-in capacitance C GDesign value. A monitor pattern on awafer is tested.5010FNA11.71314.3pF5010FNC9.91112.15010FND11.71314.3C D5010FNA13.51516.55010FNC15.31718.75010FND15.31718.75V operation:V DD = 4.5 to 5.5V, V SS = 0V30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 70MHz: Ta = −15 to +75°C unless otherwise noted.Parameter Symbol ConditionRatingUnit min typ maxHIGH-level output voltage V OH Q: Measurement cct 1, V DD = 4.5V, I OH = 16mA 3.9 4.2–V LOW-level output voltage V OL Q: Measurement cct 2, V DD = 4.5V, I OL = 16mA–0.30.4V HIGH-level input voltage V IH INHN 2.0––V LOW-level input voltage V IL INHN––0.8VOutput leakage current I Z Q: Measurement cct 2, INHN = LOW,V DD = 5.5VV OH = V DD––10µAV OL = V SS––10Current consumption I DD1Measurement cct 3, load cct 1,INHN = open, C L = 15pF5010FNEf = 70MHz–2550mA I DD2Measurement cct 3, load cct 1,INHN = open, C L = 50pF5010FNA, FNCf = 40MHz–23455010FNDf = 50MHz–2550INHN pull-up resistance R UP Measurement cct 440100250kΩFeedback resistance R f Measurement cct 55010FNA 3.57 4.2 4.83kΩ5010FNC 2.63 3.1 3.575010FND 1.87 2.2 2.535010FNE 1.87 2.2 2.53Built-in capacitance C GDesign value. A monitor pattern on awafer is tested.5010FNA11.71314.3pF5010FNC9.91112.15010FND11.71314.35010FNE7.288.8C D5010FNA13.51516.55010FNC15.31718.75010FND15.31718.75010FNE13.51516.55010FH × series5V operation:V DD = 4.5 to 5.5V , V SS = 0V30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 60MHz: Ta = −15 to +75°C unless otherwise noted.5010HN ×, HK × series5V operation: V DD = 4.5 to 5.5V , V SS = 0V , Ta = −40 to +85°C unless otherwise noted.Parameter Symbol ConditionRatingUnit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, V DD = 4.5V, I OH = 4mA 3.9 4.2–V LOW-level output voltage V OL Q: Measurement cct 2, V DD = 4.5V, I OL = 4mA –0.30.5V HIGH-level input voltage V IH INHN 2.0––V LOW-level input voltage V IL INHN––0.8V Output leakage currentI ZQ: Measurement cct 2, INHN = LOW, V DD = 5.5VV OH = V DD ––10µAV OL = V SS ––10Current consumptionI DDMeasurement cct 3, load cct 1,INHN = open, C L = 15pF5010FHA, FHC f = 40MHz–1326mA 5010FHD f = 50MHz –15305010FHE f = 60MHz–1734INHN pull-up resistanceR UPMeasurement cct 440100250k ΩFeedback resistanceR fMeasurement cct 55010FHA3.574.2 4.83k Ω5010FHC 2.63 3.1 3.575010FHD 1.87 2.2 2.535010FHE 1.87 2.2 2.53Built-in capacitanceC GDesign value. A monitor pattern on a wafer is tested.5010FHA11.71314.3pF 5010FHC 9.91112.15010FHD 11.71314.35010FHE 7.288.8C D5010FHA 13.51516.55010FHC 15.31718.75010FHD 15.31718.75010FHE13.51516.5Parameter Symbol ConditionRatingUnit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, V DD = 4.5V, I OH = 16mA 3.9 4.2–V LOW-level output voltage V OL Q: Measurement cct 2, V DD = 4.5V, I OL = 16mA –0.30.4V HIGH-level input voltage V IH INHN 2.0––V LOW-level input voltage V IL INHN––0.8V Output leakage currentI Z Q: Measurement cct 2, INHN = LOW, V DD = 5.5VV OH = V DD ––10µAV OL = V SS ––10Current consumptionI DD1Measurement cct 3, load cct 2,INHN = open, C L = 15pF , f = 50MHz 5010HK1–2040mAI DD2Measurement cct 3, load cct 1,INHN = open, C L = 50pF , f = 50MHz 5010HN1–2550INHN pull-up resistance R UP Measurement cct 440100250k ΩFeedback resistance R f Measurement cct 580200500k ΩBuilt-in capacitanceC G Design value. A monitor pattern on a wafer is tested.11.71314.3pF C D15.31718.7Switching Characteristics5010AN ×, BN ×, DN × series3V operation/Duty level: CMOSV DD = 2.7 to 3.6V , V SS = 0V , Ta = −10 to +70°C unless otherwise noted.5010AN ×, AK ×, BN ×, BK ×, DN × series5V operation/Duty level: CMOS (5010AN ×, BN ×, DN1)V DD = 4.5 to 5.5V , V SS = 0V , Ta = −40 to +85°C unless otherwise noted.5V operation/Duty level: TTL (5010×K1, AN2, AN3, AN4, BN2, BN3, BN4, BN5)V DD = 4.5 to 5.5V , V SS = 0V , Ta = −40 to +85°C unless otherwise noted.Parameter Symbol ConditionRatingUnit min typ max Output rise time t r1Measurement cct 6, load cct 1, C L = 15pF , 0.1V DD to 0.9V DD – 3.0 6.0ns Output fall time t f1Measurement cct 6, load cct 1, C L = 15pF , 0.9V DD to 0.1V DD – 3.0 6.0ns Output duty cycle 11. The duty cycle characteristic is checked the sample chips of each production lot.Duty Measurement cct 6, load cct 1, V DD = 3.0V, Ta = 25°C, C L = 15pF , f = 30MHz40–60%Output disable delay time t PLZ Measurement cct 7, load cct 1, V DD = 3.0V, Ta = 25°C, C L = 15pF––100ns Output enable delay timet PZL––100nsParameterSymbol ConditionRatingUnitmin typ max Output rise time t r1Measurement cct 6, load cct 1, 0.1V DD to 0.9V DDC L = 15pF – 2.0 4.0nst r2C L = 50pF – 4.08.0Output fall time t f1Measurement cct 6, load cct 1, 0.9V DD to 0.1V DDC L = 15pF – 2.0 4.0nst f2C L = 50pF– 4.08.0Output duty cycle 11. The duty cycle characteristic is checked the sample chips of each production lot.Duty Measurement cct 6, load cct 1, V DD = 5.0V, Ta = 25°C, C L = 50pF , f = 30MHz45–55%Output disable delay time t PLZ Measurement cct 7, load cct 1, V DD = 5.0V, Ta = 25°C, C L = 15pF––100ns Output enable delay timet PZL––100nsParameter Symbol ConditionRatingUnit min typ max Output rise time t r3Measurement cct 6, load cct 2, C L = 15pF , 0.4V to 2.4V – 1.5 3.0ns Output fall time t f3Measurement cct 6, load cct 2, C L = 15pF , 2.4V to 0.4V – 1.5 3.0ns Output duty cycle 11. The duty cycle characteristic is checked the sample chips of each production lot.Duty Measurement cct 6, load cct 2, V DD = 5.0V, Ta = 25°C, C L = 15pF , f = 30MHz45–55%Output disable delay time t PLZ Measurement cct 7, load cct 2, V DD = 5.0V, Ta = 25°C, C L = 15pF––100ns Output enable delay timet PZL––100ns5010AH ×, BH × series3V operation/Duty level: CMOSV DD = 2.7 to 3.6V , V SS = 0V , Ta = −10 to +70°C unless otherwise noted.5V operation/Duty level: CMOSV DD = 4.5 to 5.5V , V SS = 0V , Ta = −40 to +85°C unless otherwise noted.Parameter Symbol ConditionRatingUnit min typ max Output rise time t r1Measurement cct 6, load cct 1, C L = 15pF , 0.1V DD to 0.9V DD –816ns Output fall time t f1Measurement cct 6, load cct 1, C L = 15pF , 0.9V DD to 0.1V DD –816ns Output duty cycle 11. The duty cycle characteristic is checked the sample chips of each production lot.Duty Measurement cct 6, load cct 1, V DD = 3.0V, Ta = 25°C, C L = 15pF , f = 16MHz40–60%Output disable delay time t PLZ Measurement cct 7, load cct 1, V DD = 3.0V, Ta = 25°C, C L = 15pF––100ns Output enable delay timet PZL––100nsParameterSymbol ConditionRatingUnitmin typ max Output rise time t r1Measurement cct 6, load cct 1, 0.1V DD to 0.9V DDC L = 15pF –510nst r2C L = 50pF –1326Output fall time t f1Measurement cct 6, load cct 1, 0.9V DD to 0.1V DDC L = 15pF –510nst f2C L = 50pF–1326Output duty cycle 11. The duty cycle characteristic is checked the sample chips of each production lot.Duty Measurement cct 6, load cct 1, V DD = 5.0V, Ta = 25°C, C L = 15pF , f = 30MHz45–55%Output disable delay time t PLZ Measurement cct 7, load cct 1, V DD = 5.0V, Ta = 25°C, C L = 15pF––100ns Output enable delay timet PZL––100ns5010CL × series3V operation/Duty level: CMOSV DD = 2.7 to 3.6V , V SS = 0V , Ta = −20 to +80°C unless otherwise noted.5V operation/Duty level: CMOSV DD = 4.5 to 5.5V , V SS = 0V , Ta = −40 to +85°C unless otherwise noted.ParameterSymbol ConditionRatingUnitmin typ max Output rise time t r1Measurement cct 6, load cct 1, 0.1V DD to 0.9V DDC L = 15pF – 2.0 4.0nst r4C L = 30pF – 3.0 6.0Output fall time t f1Measurement cct 6, load cct 1, 0.9V DD to 0.1V DDC L = 15pF – 2.0 4.0nst f4C L = 30pF– 3.0 6.0Output duty cycle 11. The duty cycle characteristic is checked the sample chips of each production lot.Duty Measurement cct 6, load cct 1, V DD = 3.0V, Ta = 25°C, C L = 15pF , f = 30MHz45–55%Output disable delay time 22. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed.t PLZ Measurement cct 7, load cct 1, V DD = 3.0V, Ta = 25°C, C L = 15pF––100ns Output enable delay time 2t PZL––100nsParameterSymbol ConditionRatingUnitmin typ max Output rise time t r1Measurement cct 6, load cct 1, 0.1V DD to 0.9V DDC L = 15pF – 1.5 3.0nst r2C L = 50pF – 4.08.0Output fall time t f1Measurement cct 6, load cct 1, 0.9V DD to 0.1V DDC L = 15pF – 1.5 3.0nst f2C L = 50pF– 4.08.0Output duty cycle 11. The duty cycle characteristic is checked the sample chips of each production lot.Duty Measurement cct 6, load cct 1, V DD = 5.0V, Ta = 25°C, C L = 50pF , f = 30MHz40–60%Output disable delay time 22. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed.t PLZ Measurement cct 7, load cct 1, V DD = 5.0V, Ta = 25°C, C L = 15pF––100ns Output enable delay time 2t PZL––100ns5010EA × series3V operation/Duty level: CMOSV DD = 2.7 to 3.6V , V SS = 0V , Ta = −10 to +70°C unless otherwise noted.5V operation/Duty level: CMOSV DD = 4.5 to 5.5V , V SS = 0V , Ta = −40 to +85°C unless otherwise noted.Parameter Symbol ConditionRatingUnit min typ max Output rise time t r1Measurement cct 6, load cct 1, C L = 15pF , 0.1V DD to 0.9V DD –816ns Output fall time t f1Measurement cct 6, load cct 1, C L = 15pF , 0.9V DD to 0.1V DD –816ns Output duty cycle 11. The duty cycle characteristic is checked the sample chips of each production lot.Duty Measurement cct 6, load cct 1, V DD = 3.0V, Ta = 25°C, C L = 15pF , f = 30MHz40–60%Output disable delay time 22. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed.t PLZ Measurement cct 7, load cct 1, V DD = 3.0V, Ta = 25°C, C L = 15pF––100ns Output enable delay time 2t PZL––100nsParameterSymbol ConditionRatingUnitmin typ max Output rise time t r1Measurement cct 6, load cct 1, 0.1V DD to 0.9V DDC L = 15pF –510nst r2C L = 50pF –1326Output fall time t f1Measurement cct 6, load cct 1, 0.9V DD to 0.1V DDC L = 15pF –510nst f2C L = 50pF –1326Output duty cycle 11. The duty cycle characteristic is checked the sample chips of each production lot.Duty1Measurement cct 6, load cct 1, V DD = 5.0V, Ta = 25°C, C L = 15pFf = 30MHz 45–55%Duty2 f = 40MHz40–60Output disable delay time 22. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed.t PLZ Measurement cct 7, load cct 1, V DD = 5.0V, Ta = 25°C, C L = 15pF––100ns Output enable delay time 2t PZL––100ns。