INJ0003AM1中文资料
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ＩＮJ0003AＸ SERIES
High speed switching ・PRELIMINARY Notice: This is not a final specification Some parametric are subject to change. Silicon P-channel MOSFET
DESCRIPTION OUTLINE DRAWING Unit：mm
INJ0003AT2 INJ0003AM1 INJ0003AX is a Silicon P-channel MOSFET. This product is most suitable for low voltage use such as portable machinery , because of low voltage drive and low on resistance.
FEATURE
・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=-0.6～-1.2V ・Low on Resistance. Ron=2Ω(TYP) ・High speed switching. ・Small package for easy mounting.
JEITA, JEDEC：－ ISAHAYA：T-USM JEITA：SC-70 JEDEC：－ APPLICATION high speed switching , Analog switching
TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN
INJ0003AU1 INJ0003AC1
EQUIVALENT CIRCUIT
G
SD
JEITA：SC-75A JEDEC：－ JEITA：SC-59 JEDEC：Similar to TO-236
TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN T TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN
0.15
0～0.1 0.7 0.9 0.3 1.250.425 2.1
0.65
0.65 1.3 2.0 ①
② ③0.425
0.15
0～0.1 0.55 0.7 0.3 0.40.80.41.6
0.5
0.5 1.0 1.6 ①
②③
0.16
0～0.1 0.8 1.1 0.4 0.51.50.5 2.5
0.95
0.95 1.90 2.9 ①
② ③0.5 0.25 0.2 0.80.2
0.4
0.4 0.8 1.2 ①
②③
ISAHAYA ELECTRONICS CORPORATION 元器件交易网www.cecb2b.com
ＩＮJ0003AＸ SERIES
High speed switching ・PRELIMINARY Notice: This is not a final specification Some parametric are subject to change. Silicon P-channel MOSFET
MAXIMUM RATING（Ｔａ＝２５℃） RATING SYMBOL PARAMETER INJ0003AT2 INJ0003AU1 INJ0003AM1 INJ0003AC1UNIT
ＶDSS Drain-source voltage -20 V ＶGSS Gate-source voltage ±8 V Ｉ D Drain current -200 mA
ＰＤ Total power dissipation（Ta=25℃） 125（※） 150 200 mW
Ｔch Channel temperature +125 +150 ℃ Ｔｓｔｇ Range of Storage temperature -55～+125 -55～+150 ℃
ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃） ※package mounted on 9mm×19mm×1mm glass-epoxy substrate. LIMIT SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT
V(BR)DSS Drain-source breakdown voltage I D=-100μA, VGS=0V -20 - - V IGSS Gate-source leak current V GS=±5V, VDS=0V - - ±0.5μA IDSS Zero gate voltage drain current V DS=-20V ,VGS=0V - - -50 μA Vth Gate threshold voltage I D=-250μA, V DS= V GS -0.6 - -1.2 V
| Yfs | Forward transfer admittance V DS=-10V, I D=-0.1A - 280 - mS
RDS(ON) Static drain-source on-state resistance I D=-100mA, V GS=-4.0V - 2 - Ω
Ciss Input capacitance V DS=-10V, V GS=0V,f=1MHz - 37 - pF
Coss Output capacitance V DS=-10V, V GS=0V,f=1MHz - 12 - pF
tON - 16 -
tOFF Switching time V DD=-5V , I D=-10mA V GS=0～-5V - 110 - ns
Switching time test condition
Vinput
output DD=-5VD.U.≦1%Common sourceTa=25℃VDS(ON）-5V0V
90%10%
VDD90%
10%
tontofftrtf0
-5V
10μsINOUT
50ΩRL
VDDtest circuit
waveform
waveform
ISAHAYA ELECTRONICS CORPORATION 元器件交易网www.cecb2b.com
TYPICAL CHARACTERISTICS
ISAHAYA ELECTRONICS CORPORATION ID -VDS
-0-20-40-60-80-100
-0-2-4-6-8-10Drain-Source voltage VDS (V)Drain current ID (mA)Ta=25℃
VGS=-1.0V-1.1V-1.2V-1.3V-1.4V-1.5V
-1.6VID -VDS(Low voltage region)
-0-1-2-3-4-5
-0-0.1-0.2-0.3-0.4-0.5Drain-Source voltage VDS (V)Drain current ID (mA)Ta=25℃
VGS=-0.8V-0.85V-0.9V-0.95V-1.0V
IDR -VDS
-1-10-100
00.511.52Drain-Source voltage VDS (V)Drain reverse current IDR (mA)Ta=25℃VGS=0V
C - VDS
110100
-0.1-1-10-100Drain-Source voltage VDS (V)Capacitance C (pF)
Ta=25℃VGS=0VCoss
CissVDS(ON) -ID
-1-10-100-1000
-1-10-100Drain current ID (mA)Drain-Source ON voltage
VDS(ON) (mV)Ta=25℃
VGS=-4V|Yfs| - ID
1101001000
-1-10-100-1000Drain current ID (mA)Forward transfer admittance
|Yfs| (mS)Ta=25℃
VDS=-10VID -VGS
-1-10-100-1000
-0-1-2-3-4-5Gate-Source voltage VGS (V)Drain current ID (mA)Ta=25℃VDS=-10V
t - ID
110100100010000
-0.1-1-10-100Drain current ID (mA)Switching time t (ns)Ta=25℃
tontoff
trtf元器件交易网www.cecb2b.com
